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1、1.It is, nevertheless, a high tribute to the skill and care of many experimenters that, in spite ofthis, semiconductors had been recognized as a distinct class of substances and their main properties appreciated long before a comprehensive theory was available to account for them.然而,(早期的工作地)归功于许多实验工

2、作者的实验技巧和细心,尽管这样,半导体被确认是一种不同类别的物质,并且远在获得深入的理论进行解释之前人们就已经了解了它的主要性质。然而,尽管如此,人们还是认识到了半导体是一类特殊的物质,并在可以用来说明半导体各种性质的深入理论出现之前,早已注意到了它们的一些主要性质。这一事实说明早期的实验工作者们的实验技巧和细心是很值得赞赏的。2.These effects are now known to be due to oxide films or actual gaps separating the individualcrystals but led to the ms titanium and

3、zirconium once being listed as semiconductors.我们现在知道这些效应是由氧化物膜或实际存在的那些将各个单晶的间隙(各单晶之间的界面)造成的,但是却导致一度将金属钛和锆划分到半导体中。3.It must be admitted, however, that no infallible criterion was available till the quantumtheory of solids gave an understanding of the reasons for the various properties observed.但是,必须承

4、认直到固体量子理论对观察到的大量的性质给出合理的解释,我们才能得到确实可靠的标准。4.A review of this early work has been given by K. Lark-Horowitz together with a very extensivebibliography containing over 350 references. Earlier reviews by B' Gudden also deal extensively with this phase and discuss in some detail the problems of ident

5、ifying semiconductors.霍洛维茨对这些早期工作进行了综述,并列出了一个包含超过 350 条参考文献的内容非常广泛的书目。古登的更早期的工作也对这一阶段的工作有广泛的涉猎,并且就鉴别半导体的一些问题进行了相当详细的讨论。5.The latter, which is generally known as the carrier mobility, and which we shall define moreprecisely later generally tends to decrease as the temperature is raised, especially at

6、 the highertemperatures, and this accounts for the decrease in conductivity of mtemperature.s with increasing后者通常被称为载流子迁移率,在后面还会给出精确的定义,它通常会随着温度的升高而呈现下降的趋势,特别是在高减小。况下,这也解释了为什么金属的电导率随温度的升高而6.The substances concerned were mainly mlic oxides and sulphides and the defectsemiconductors were those with a

7、mlic content less than that corresponding tostoichiometric composition, i.c. oxidized compounds.所涉及的物质主要是金属氧化物和硫化物,欠缺半导体是那些金属的含量小于相应的理想配比成分(化学计量组分相对应的含量)的物质,也就是被氧化的化合物。7.The importance of this work was in showing the vital part played by small deviations fromstoichiometric composition in determining

8、 the properties of compound semiconductors.这项工作的重要性在于指出对理想化学配比的微小偏离在确定化合物半导体的性质中所起的的作用。8.Although they are not strictly semiconductors but insulators, mention must be made of thelarge amount of research carried out by R. W. Pohl and his collaborators on the alkali halides, since this helped greatly

9、to clarify many of the properties of semiconductors.尽管严格地说它们不是半导体而是绝缘体,但是我们必须要提到波尔和他的合作者们在碱金属卤化物方面所做的大量的研究,因为他们的工作对我们澄清半导体的一些性质有很大帮助。9.Much of the uncertainty of the early work on semiconductors arose through a failure todifferentiate between effects, which arise in the bulk of the material, and tho

10、se, which are characteristic of the surface or of the interface between two different materials.由于不能正确将材料体内产生的效应和材料表面或不同材料界面间的固有效应区来,早期对半导体的研究中产生了许多不确定性。10.The use of single crystals has enabled not only the separation of the bulk and surfaceproperties but has also enabled the surface and the interf

11、ace between two types ofsemiconductor, or between a semiconductor and a m, to be studied in much greater detail.单晶的使用不但可以把体内性质和表面性质区来,而且还能更详细地研究表面和两种半导体之间的界面或者半导体和金属之间的界面的性质。11.More recently the study of amorphous semiconductors has led to a fuller appreciation ofthose properties, such as high carri

12、er mobility, that depend principally on the quality of thecrystals being studied and those more fundamental properties which do not depend on long-range order.最近对非晶态半导体的研究使我们对那些主要依赖所研究晶体的质量的性质如高的载流子迁移率以及那些不依赖于长程有序的更基本的性质有了更充分的认识。12.The photoconductive properties of selenium, and of copper oxide, hav

13、e been used toprovide exposure meters for photography and photocells, which are used in the film industryfor transforming the markings on the sound track into electric currents for implication and reproduction by loud-speakers.硒和氧化铜的光电导性质可以用来提供摄影技术用的表和光电管,光电管在工业中是用来将音轨上的信号转换成电流,以便用扬声器将它放大和再生 。13.The

14、 discovery that a fine wire, or cats whisker, in contact with a crystal of semiconductingmaterial made an excellent rectifier for high-frequency currents led to a great increase in thesensitivity of radio receivers, and this type of device was widely used in the early days of broadcasting.将半导体材料晶体和细

15、金属丝或猫须连在一起就是一个非常好的高频电流整流器,这一发现极大提高了无线电的灵敏性,这一类型的器件在早期被广泛应用到广播中。14.The modern successor to the transistor is the integrated circuit (IC.) in which manytransistors and their associated components such as resistors, capacitors etc. are produced by controlled diffusion of impurities into a small chip of

16、 silicon.现代的晶体管的继任者是集成电路。集成电路中的许多晶体管和与它相关联的一些元件如电阻、电容等是通过扩散杂质进入一个小的硅片制作的。15.Here these forces are supposed to attract the electron strongly if it moves outside theboundary, and in the simplest form of the theory it is assumed that they set up an impenetrable potential barrier which holds the electro

17、ns in the solid.这里我们期待这种力场在电子运动出界面时对它产生一个很强的吸引力,在最简单的理论模型中,假设它建立了一个不能穿过的势垒,将缚在固体中。16.In Summerfields theory, the allowed energy levels for the valence electrons of a crystal ofmacroscopic dimensions lie very close together and their values extend from nearly the bottom of the potential trough in whi

18、ch the electrons move to indefinitely high values.在萨摩菲尔德的理论中,对宏观尺度晶体中的价电子而言,它们的能级靠的很近,而且能级的值几乎从电子在其中运动的势阱底部一直延伸到无穷大。17.If now we have N atoms in a crystal, and we assume the crystal to be expanded so that thelattice spacing becomes very great, then the allowed energy levels will be just the atomic e

19、nergy levels which, for the moment, we shall assume to be non-degenerate, i.e. each has aseparate energy.如果我们现在有一个 N 个原子的晶体,而且假设晶体不断膨胀以至于晶格之间的间隔变的非常大。于是的能级恰好是原子的能级,我们暂时假设原子的能级是非简并化的,也即是说每个能级有各自的能量。18.This not only explains why inner electrons do not contribute to conduction but it gaveWilson the clu

20、e to the essential deference between msemiconductors on the other.s on the one hand and insulators and这不但解释了为什么内层电子对电导没有贡献,而且在研究一方面是金属和绝缘体,另一方面是金属和半导体的本质差别方面为威尔逊提供了线索。19.Most of the substances with which we shall be concerned have such a structure, but maynot always consist of large single crystals

21、but of aggregates of very small crystals with random orientation.要涉及的大部分物质都有这样的结构,但是并不是都由大的单晶块组成。而是由非常小的随机取向的晶体在一起组成的。20.The number of excited electrons would increase with temperature in a manner governed bya process having an activation energy, of the order of E and we should expect a rapid increa

22、se of the conductivity with temperature.被激发的电子的数目将会随着温度的升高而增加,在一定程度上,这是由一个获得与 E 相同量级的激活能的过程的,因此我们可以预期电导率随着温度的升高而快速增加。21.As we shall also see later the effect of very small amounts of impurity can have a markedeffect on this activation energy so that materials which have considerably greater values o

23、f AE may behave as semiconductors when they contain certain active impurities.后面我们还会看到数量很少的杂质会对激活能产生非常显著的影响以至于具有相当大激活能 E 值的材料,当它们含有某些“活性”杂质时可能会表现出半导体的行为(性质)。22.If we assume that the variation with T of the mobility of electrons and holes in an electricfield is small compared with the variation in th

24、e exponential factor in (4) then we have for the conductivity , which is then simply proportional to the number of carriers, a variation of theform.如果我们假设在电场中电子和空穴的迁移率随温度的变化与式(4)中指数因子的变化相比很小,那么我们就得到电导率 ,这个电导率仅仅正比于载流子的数量,有如下的一个变化的形式。23.In many instances, it is found that the energy required to excite

25、 an electron into theconduction band from a donor level is so small that the electrons from all, the available donor levels are excited and are in the conduction band at room temperature.在许多例子中人们发现将一个电子从施主能级中激发到导带所需的能量太小了,以至于在室温时,所有可用的施主能级上的电子都被激发进入到导带中了。24.Hence, for a semiconductor in this conditi

26、on thewill increase with increasingtemperature, till a temperature is reached at which the intrinsic electrons begin topredominate, when it will begin to fall exponentially in the manner once thought to be characteristic if semiconductors.因此这个条件下的半导体,它的电阻将会随着温度的升高而增加,直到温度升高到本征电子占优势,此时电阻将开始以指数的方式下降,这

27、种性质曾一度被认为是半导体的特性。25.When light frequency is high enough so that a quantum absorbed by a valence electron hassufficient energy to raise it from the top of the full band to the conduction band, extra carriers are created and these lead to increased conductivity.当光的频率足够高时一个价电子吸收的量子(光子)就有足够的能量能够使电子从满带的顶

28、端跃迁到导带中,这样就会产生额外的载流子从而使电导率增加。26.It will be clear from the above calculation that if germanium is to be intrinsic at roomtemperature it must be free from impurities giving levels near the conduction band to better than one part in 109.从上面的计算我们可以清楚如果室温下锗处于本征状态,那么它含有能够提供靠近导带能级的杂质的浓度一定大于(原子浓度的)109 分之一(&

29、lt;10-9)。那么它含有的杂质的浓度一定大于(原子浓度的)109 分之一(<10-9)。这些杂质能够提供靠近导带的能级。27.It is anticipated that the reader will have a "hands-on" involvement with etching and opticalmicroscopy, but it is expected that with X-ray topography, the appropriate specialist will perform the work and help interpret th

30、e results.可以预期读者将会有亲自动手进行光刻(实验)和光学显微镜使用的机会,但是至于 X 射线形貌技术,我们期望适当的来完成这个工作并帮助对结果做出解释。28.It turns out, however, that the minority carriers are nevertheless, of great importance, asmany electronic processes in semiconductor technology are controlled by the minority carriers,the density of which, beinall,

31、 may be more readily varied.然而尽管如此,事实证明,少数载流子仍然起着很重要的作用,因为在半导体工艺中一些电子的过程都是由少数载流子的,少数载流子的浓度小,可以更容易地改变。29.One to one correlations between dislocations and emitter to collector shorts in bipolartransistors, as well as avalanche sites in photo detectors have been made, whereas process induced stacking f

32、aults are known to reduce the storage time in MOS memory devices.位错与双极性晶体管中发射极到集电极的短路以及位错与光探测器中雪崩点的一对一的对应关系已经被找出,然而已经知道产生堆垛层错的过程会减少 MOS设备的时间。30.If defect characterization is worthy of a philosophy, then it must be "do not use overkill", orin other words use the simplest technique possible

33、to obtain the necessary information and it first.如果缺陷分析是一门有价值的科学,那么就不要过度的使用它,或者换句话说就是尽可能和优先使用最简单的方法获得必要的信息。31.When a new etchant is needed, it is almost always formulated by utilizing the experiencegained from the prior etching of similar materials and additional trial and error experimentation, rather than the application of chemical theory

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