工艺模拟仿真

1、电子科技大学成都学院（微电子技术系）实验报告书课程名称：工艺模拟仿真学号：2 8 4 (0 7 1 0113姓名:岳波教师：袁-艺丹2011年 06月 20日实验目的：学习并掌握LDMOS工艺仿真技术。实验仪器设备计算机一台仿真软件三、实验原理工艺模拟是在给定的器件结构、工艺步骤和工艺参数的条件下求解半导体 器件内部的结构变化和杂质分布。四、实验步骤及数据设置网格LINEYLOC=0SPAC=2LINEYLOC=7SPAC=2LINEYLOC=65SPAC=5LINEXLOC=0SPAC=2LINEXLOC=80SPAC=2初始化INITIALIZE 初试氧化BORON=5E13T.FINAL

2、=1000 F.N2=3DIFFUSETIME=25TEMP=750F.O2=0.05DIFFUSETIME=5TEMP=1000DIFFUSETIME=45TEMP=1000DIFFUSETIME=5TEMP=1000DIFFUSETIME=25TEMP=45DRYO2F.H2=3F.O2=1.7DRYO2T.FINAL=1000Nwell光刻MASK DEPOSIT EXPOSE DEVELOP ETCH ETCHNwell注入氧化DIFFUSE F.O2=0.05 DIFFUSE DIFFUSE DIFFUSE DIFFUSENwell注入IN.FILE=MASK.TL1PHOTO TH

3、ICK=1.2MASK=n wellOXIDEPOHOTIME=20TIME=5TIME=5TIME=5TIME=20ALLTEMP=750TEMP=1000TEMP=1000TEMP=1000TEMP=1000T.FINAL=1000F.N2=3INERTDRYO2F.H2=3F.O2=1.7DRYO2T.FINAL=750X* .H-fl* fZZLB BriDEPOSITEXPOSEDEVELOP IMPLANT ETCHNwell推阱DIFFUSEF.02=0.05DIFFUSEDIFFUSEDIFFUSE 光刻PBODY区DEPOSITEXPOSE DEVELOP ETCHPBODY

4、注入IMPLANTETCH光刻P“注入区DEPOSTEXPOSEDEVELOPP “注入IMPLANTETCHP扩散DIFFUSEDIFFUSEDIFFUSESi3N4下氧化层ETCHDIFFUSEPHOTO THICK=1.2MASK = n wellPHOS DOSE=9.8E11PHOTO ALLTIME=20 TEMP=750TIME=30TIME=170TIME=20TEMP=1200TEMP=1200TEMP=1200PHOTOTHICK=1.2MASK=pwell 1OXIDETHICK=0.4 i e1 anci- lB3Imi怖1网网科屈M 1.1.BORONDOSE=1.1

5、E13ENERGY=60PHOTOALLPHOTO THICK=1.2MASK=pwell 2BORONPHOTODOSE=1.2E13ALLTIME=20TEMP=750T.FINAL=1100TIME=20TEMP=750INERTTIME=20TEMP=750T.FINAL=750OXIDETIME=20TEMP=750T.FINAL=950DIFFUSETIME=5TEMP=950DRYO2DIFFUSETIME=12TEMP=950F.N2=3F.O2=1.7DIFFUSETIME=5TEMP=950DRYO21DIFFUSETIME=20TEMP=750T.FINAL=750INE

6、RT沉积Si3N4DEPOSITNITRIDETHICK=0.15刻蚀有源区DEPOSIT EXPOSE DEVELOP ETCH ETCH ETCH 生长场氧PHOTO THICK=1.2MASK=nitrideNITRIDEOXIDEPHOTOSPACES=3F.N2=3DIFFUSETIME=20TEMP=750T.FINAL=950F.N2=3F.O2=0.05DIFFUSETIME=5TEMP=1000DRYO2DIFFUSETIME=10TEMP=1000F.N2= 1.7 PROCESS=10DIFFUSETIME=5TEMP=1000DRYO2DIFFUSETIME=20TEM

7、P=1000T.FINAL=750INERTALL刻蚀 Si3N4 + SiO2ETCHNIRIDEALL预氧+刻蚀氧预氧DIFFUSETIME=20TEMP=750T.FINAL=950F.O2=0.05DIFFUSETIME=5TEMP=950DRYO2DIFFUSETIME=6TEMP=950F.H2= 3DIFFUSETIME=5TEMP=950DRYO2DIFFUSETIME=20TEMP=950T.FINAL=750生长栅氧DIFFUSETIME=20TEMP=750T.FINAL=1000F.O2=0.05DIFFUSETIME=60TEMP=1000DRYO2DIFFUSETI

8、ME=20TEMP=950T.FINAL=750ETCHOXIDETHICK=0.04F.O2=1.7INERTINERTF.N2=3沉积+刻蚀多晶硅DEPOSIT PHOTO THICK=1.2 spaces=2 phos=20 temp=60DEPOSITPHOTO THICK=1.2EXPOSE MASK=polyDEVELOPETCH POLYETCH PHOTO ALL 刻蚀N+DEPOSITEXPOSEDEVELOPN+注入区PHOTO THICK=1.4MASK=ni mpla ntIMPLANTPHOSETCHPHOTO光刻P+注入区DEPOSITEXPOSEDEVELOPPH

9、OTOMASK=nimpla ntP+注入IMPLANTBORONETCHPHOTOW. Mil1DOSE=2E15ALLTHICK=1.4DOSE=3E15ENERGY=60ALLALLENERGY=100DEPOSTOXIDETHICK=0.6diffusi ontime=20temp=750t.fin al=950inertdiffusi ontime=30temp=950inertdiffusi ontime=20temp=950t.fin al=750inert沉积SiO2 +增密刻蚀接触空DEPOSITEXPOSEDEVELOPETCHETCH 蒸铝+刻铝DEPOSITDEPOSITPHOTOOXIDEPHOTOALUMINIUMPHOTOTHICK=1.2MASK=omico ntTHIC