CMOS工艺流程讲解

1、Wafer FabricationProcessTechnologyCMOSContent0.5um CMOS process flow& cross section0.18um CMOS process flow&cross sectionPCM introductionCMOSStarting with a silicon waferCross Section of the Silicon WaferMagnifying the Cross SectionCMOSn/p-well FormationGrow Thin OxideDeposit NitrideDeposit Resistsi

2、licon substrateUV ExposureDevelop ResistEtch Nitriden-well ImplantRemove ResistCMOSn/p-well Formationsilicon substrateGrow Oxide (n-well)Remove Nitridep-well ImplantRemove OxideTwin-well Drive-inp-welln-wellRemove Drive-In Oxidesilicon substratep-welln-wellCMOSLOCOS IsolationGrow Thin OxideDeposit N

3、itrideDeposit ResistUV ExposureDevelop ResistEtch NitrideRemove ResistCMOSLOCOS Isolationsilicon substratep-welln-wellDeposit ResistUV ExposureDevelop ResistField Implant BRemove ResistGrow Field OxideFoxRemove NitrideRemove Oxidesilicon substratep-welln-wellGrow Screen OxideCMOSTransistor Fabricati

4、onVt ImplantDeposit ResistUV ExposureDevelop ResistPunchthrough ImplantRemove ResistRemove OxideFoxsilicon substratep-welln-wellGrow Gate OxideCMOSTransistor FabricationDeposit PolySiPolySi ImplantpolySipolySiDeposit ResistUV ExposureDevelop ResistEtch PolySiRemove ResistFoxsilicon substratep-welln-

5、wellCMOSTransistor FabricationDeposit Thin OxideDeposit ResistUV ExposureDevelop Resistn-LDD ImplantRemove ResistFoxpolySipolySisilicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp-LDD ImplantRemove ResistDeposit Spacer OxideEtch Spacer OxideFoxpolySipolySi

6、silicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistn+ S/D Implantn+n+Remove ResistFoxpolySipolySisilicon substratep-welln-wellCMOSTransistor FabricationDeposit ResistUV ExposureDevelop Resistp+ S/D Implantp+p+Remove ResistFoxpolySipolySin+n+silicon substrat

7、ep-welln-wellCMOSContacts & InterconnectsDeposit BPTEOSBPTEOSBPSG ReflowPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistContact EtchbackRemove ResistFoxpolySipolySin+n+p+p+silicon substratep-welln-wellCMOSContacts & InterconnectsDepost Metal 1Metal 1Deposit ResistUV ExposureDevelop Resi

8、stEtch Metal 1Remove ResistFoxpolySipolySip+p+n+n+BPTEOSsilicon substratep-welln-wellCMOSContacts & InterconnectsDeposit IMD 1IMD1Deposit SOGSOGPlanarization EtchbackDeposit ResistUV ExposureDevelop ResistVia EtchRemove ResistFoxpolySipolySip+p+Metal 1n+n+BPTEOSsilicon substratep-welln-wellCMOSConta

9、cts & InterconnectsDeposit Metal 2Metal 2Metal 2Deposit ResistUV ExposureDevelop ResistEtch Metal 2Remove ResistDeposit PassivationFoxpolySipolySip+p+Metal 1n+n+BPTEOSIMD1SOGPassivation0.18um Process Cross sectionPad oxideP SubstrateOD SiN0.18um Process Cross sectionP Substrate0.18um Process Cross s

10、ectionP SubstratePwell maskPwellNAPTVTNB11 Pwell/NAPT/VTN ImplantNwell maskP31 Nwell/P_APT/VTP ImplantNwellPAPTVTP0.18um Process Cross sectionP SubstratePwellNAPTVTNNwellNfieldPAPTMask 132HF Wet dip and Grow Gate oxide-2 0.18um Process Cross sectionPoly NLDDP SubstrateNLDDPwellNAPTVTNNwellPAPTVTPPol

11、yNLDD implantNLDD 114 maskPLDD 113 maskPLDD implant0.18um Process Cross sectionPoly PLDDPLDD NLDDP SubstrateNLDDPwellNAPTVTNNwellPAPTVTPPolyPLDD 197 mask (3.3V &1.8V)P-pocket/PLDD impNLDD 116 mask (3.3V)NLDD2-1 As/NLDD2-2P31 imp0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSD

12、NSDNSDNSDPSDPSDPSD 197 maskNSD 198 maskNSD imp0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSD0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxide0.18um Process Cross sectionPolyi P SubstratePwellNAPTNwellPA

13、PTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxide0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyiPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideIMD-1WWWW0.18um Process Cross sectionPoly P SubstratePwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideIMD-1WWWWMetal-1Metal-20.18um Pr

14、ocess Cross sectionMetal-1IMD-1A-Si PwellNAPTNwellPAPTVTPPolyPSDNSDNSDNSDPSDPSDWWWWILDTrench oxideMetal-4IMD-4WWWIMD-5Metal-6IMD-3WWMetal-2IMD-2Metal_5WWWWWWWWPCMPCM就是Process Control & Monitor的简称；同时，PCM也称为WAT：Wafer Accept Test；PCM -Purpose PCM 主要把线上一些工艺异常进行及时的反映，在产品入库前对其进行最后一道质量的检验，其作用归纳起来，主要有如下几点：

15、（1）对产品进行参数质量检验； （2）监控在线工艺对电参数的影响，以及工艺的波动； （3）判定WAFER PASS/FAIL的一个重要依据，客户会根据PCM 测试情况，决定接收、或拒收WAFER。 (4) Yield analysis PCM key items （1）Vt （2) BVD （3）Ion （4）Leakage （5）Sheet Rs （6）Rc （7）Capacitor (8) OthersPCM Test LocationPCMMOS TransistorPCM Vt measurePCM BVD maesurePCM Leakage measurePCM I-V curve

16、 PCM InterPoly CapacitorMETALPOLY2POLY1POLY2POLY1FOXP-SUBW (Capacitor Width)L (Capacitor Length)CAPACITORCAPACITORPCM Poly RsWLP SubstrateLWP SubstrateHigh Resistor layerPoly1Metal1Poly1( Low Rs )( High Rs )Poly Resistor Marking layer PCM NW RsP-SUBN WellMetalN+ContactNCOMP(N+ implant)NwellL N+Nwell Resistor Marking LayerPCM N+ RsP-SUBMetalContactNCOMP(N+ implant)L N+N+ Resistor Marking LayerPCM P+ RsP-SUBMetalPCOMP(P+ implant)NwellL P+NwellPCM P+/NWPCOMP(P+ implant)P-SUBN WellMetalP+N+ContactNCOMP(N+ implant)Nwell