半导体材料英文缩略语

1、材料科学半导体材料英文缩略语材料科学2008-03-24 16:18:46阅读37评论0 字号：大中小订阅援引：MEMC Electronic Materials, Inc.A.-AngstromA-defects - Dislocation loops in Silicon formed by agglomeration of interstitialsAA - Atomic absorptionAE - Acid EtchAFM - Atomic Force MicroscopyALCVD - Atomic Layer Chemical Vapor DepositionAMC - Barr

2、el or batch type Epi reactor (Applied Materials)APCVD - Atmospheric-Pressure Chemical Vapor Deposition FurnaceASIC - Application Specific Integrated CircuitASM - a single-chamber Epi reactor (ASM America)ASTM - American Standard Test MethodASTM - American Society for Testing and MaterialsBESOI - Bon

3、ded and Etch Back SOIBGSOI - Bonded and Grind Back SOIBJT - Bipolar Junction TransistorBMD - Bulk Micro-Defects or Bulk Microdefect Density (used almost exclusivelyas a measure of the oxygen precipitate density)BOE - Buffered Oxide EtchBOX - Buried Oxide LayerBP - Backside PolishBV - Breakdown Volta

4、geBvox - Breakdown Voltage-oxideCC - CentigradeC/min - Centigrade per minuteCD - Critical DimensionCE - Caustic Etchcm - Centimeter (0.01 meter)CMOS - Complementary Metal Oxide SemiconductorCMP - Chemical Mechanical PolishingCO - Carbon MonoxideCO2 - Carbon DioxideCOO - Cost of OwnershipCOPs - Cryst

5、al Originated ParticlesCoQC - Certificate Of Quality ConformanceCP - Crystal PullerCV - Capacity or capacitance voltageCVD - Chemical Vapor DepositionCZ - Czochralski method of pulling single crystalDD-defects - Very small voids in Silicon formed by agglomeration of vacanciesDIBL - Drain Induced Bar

6、rier LoweringDIC - Differential Interference ContrastDL - Diffusion LengthDMOS - Double-diffused MOSDOE - Design of ExperimentsDOF - Depth of FocusDRAM - Dynamic Random Access MemoryDSOD -Direct Surface Oxide DefectDSP - Double Sided PolishDZ - Denuded Zone (depth measured from the surface that is f

7、ree of oxygenprecipitates and which is denuded of interstitial oxygen (by out-diffusion)EeDRAM - Embedded Dynamic Random Access MemoryEG - Enhanced GetteringEEPROM - Electrically-erasable and Programmable Read-onlyMemoryEPROM - Erasable and Programmable Read-only MemoryEOT - Equivalent Oxide Thickne

8、ssEPI - EpitaxyESF - Epi Stacking FaultFFBE - Floating Body EffectFET - Field Effect TransistorFD-SOI - Fully Depleted Silicon-on-InsulatorFPD - Flow Pattern Defect (ref. Crystal)FPD - Focal Plane Deviation (ref. Mechanical flatness)FRAM - Ferroelectric Random Access MemoryFTIR - Fourier Transform I

9、nfra-Red SpectroscopyFZ - Float Zone method of Crystal PullingGBIR - Global flatness, back-referenced GeOl - Germanium-on-InsulatorGFA - Gas Fusion AnalysisGOI - Gate Oxide IntegrityGTIR - Global Total Indicated Reading GUI - Graphical User InterfaceHH2 - Hydrogen gasH2O2 - Hydrogen PeroxideHCl - Hy

10、drogen ChlorideHF - Hydrofluoric AcidHMOS - High-performance MOSHZ - Hot ZoneIC - Integrated CircuitsIDM - Integrated Device ManufacturerIG - Internal GetteringIGBT - Insulated Gate Bipolar TransistorIQC - Incoming Quality ControlISO - International Standards OrganizationITOX - Internal OxidationJFE

11、T - Junction Field Effect TransistorKkg - KilogramkN - Kilo NewtonKOH - Potassium HydroxidekP - Kilo PascalKSIE - Thousand Square Inch EquivalentLLAD - Large Area DefectLg - Transistor Gate LengthLLS - Localized Light ScatterersLLPDs - Large Light Point DefectsLPCVD - Low Pressure Chemical Vapor Dep

12、ositionLPDs - Light Point DefectsLPD-E - Light PointDefect,classE(a KLA-TencorSP1defect class)LPD-N - Light PointDefect,classN(a KLA-TencorSP1defect class)LPD-S - Light PointDefect,classS(a KLA-TencorSP1defect class)LPE - Liquid PhaseEpitaxyLSE - Latex Sphere Equivalent particle sizeLSI - Large-scal

13、e IntegrationLSTD - Laser Scattering Tomographic DetectionLTO - Low Temperature OxideM9K - MEMC proprietary polishing machineMBE - Molecular Beam EpitaxyMDZ - Magic Denuded Zone (gettering)MEMS - Micro-ElectroMechanical SystemMIM - Metal-Insulator-MetalMLD - Modified Low Dosemm - 1/1000 of a meter a

14、nd 0.03937 inchmm/min - millimeters per minuteMNOS - Metal Nitride Oxide SemiconductorMOCVD - MetalOrganic Chemical Vapor DepositionMODFET - Modulation-Doped Field Effect TransistorMOS - Metal Oxide SemiconductorMOSFET - Metal Oxide Semiconductor Field Effect TransistorMRAM - Magnetoresistive Random

15、 Access MemoryMSI - Medium-scale IntegrationMSIE - Million Square Inch EquivalentNN - Silicon doped to create excess negative charge carriers (electrons)N+ - Heavily doped, N-type siliconNT - NanotopographyN2 - Nitrogen gasnm - nanometersNMOS - N-channel Metal Oxide SemiconductorNPT - Non-Punch Thro

16、ugh02 - OxygenOi -Interstitial OxygenOISF - Oxidation-Induced Stacking FaultOPP - Optical Precipitate ProfilerOUM - Ovonics Unified MemoryPP - Silicon doped to create excess positive charge carriers (holes)P- - Lightly doped P-type silicon waferP+ - Heavily doped P-type silicon waferP/P+ - Lightly d

17、oped P-type epi layer on a heavily doped P-type substrateP/P- - Lightly doped P-type epi layer on a lightly doped P-type substrateP-band - Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundaryPD-SOI - Partially Depleted Silicon-on-InsulatorPECVD - Plasma Enhanced Che

18、mical Vapor Deposition FurnacePFRAM - Polymeric Ferroelectric Random Access MemoryPFZ - Precipitate Free Zone (depth measured from the surface that is free ofoxygen precipitates but not necessarily depleted in interstitial oxygen)PMOS - P-channel Metal Oxide SemiconductorPPB - Parts Per BillionPPC -

19、 Post Polish CleanPPE - Personal Protective EquipmentPPM - Parts Per MillionPPMA - Parts Per Million AtomicPPMD - Parts Per Million DefectivePPT - Parts Per TrillionPROM - Programmable Read-only MemoryPT - Punch ThroughP/V - Peak to Valley measurementPZT - Lead Zirconate TitanateQRRAM - Random Acces

20、s MemoryRF - Radio FrequencyRFCMOS - Radio-Frequency Complementary Metal Oxide SemiconductorROM - Read-only MemoryRSD - Raised Source/DrainRTA - Rapid Thermal AnnealRTP - Rapid Thermal ProcessSSAC - Submicron Application CrystalSBIR - Site flatness, back-referencedSBSD - Soft Backside DamageSC1 - 1s

21、t cleaning bath in the standard “RCA clean” sequence, consisting ofNH4OH / H202/ H20 solution designed to remove particles from Si surfaceSC2 一 2nd cleaning bath in the standard “RCA clean” sequence, consisting ofHCl / H202/ H20 solution designed to remove metals from Si surfaceSCE - Short Channel E

22、ffectsSEM - Scanning Electron MicroscopeSFQR - Site flatness, best-fit, front-referencedSFSR - Site flatness, best-fit, front-referenced, scanning siteSGOI -Strained Si on SiGe on InsulatorSi - SiliconSIE - Square Inch EquivalentSIMOX - Separation by Implantation of OxygenSIMS - Secondary Ion Mass S

23、pectroscopySiO - Silicon MonoxideSiO2 - Silicon DioxideSIP - Single In-line PackageSIRM - Scanning Infra-red MicroscopeSoC - System-on-a-ChipSOI - Silicon-on-InsulatorSOS - Silicon-on-SapphireSPT - Soft Punch ThroughSPV - Surface PhotovoltageSRAM - Static Random Access MemorySRP - Spreading Resistance Probe or Spreading Resistance ProfileSSI - Small-scale IntegrationsSi - Strained SiliconSSIS -