半导体光电子学

半导体光电子学的新进展

RecentProgressonSemiconductorBased

Opto-electronicDevices罗毅YiLUO集成光电子国家重点实验室清华大学

电子工程系StateKeyLabonIntegratedOptoelectronicsDept.ofElectronicEngineering,TsinghuaUniversity2022/12/111BackgroundTheDemandforMoreBandwidth Internet,multimediacommunications,andetcMethodstoIncreaseSystemCapacity WDM(Wavelength-DivisionMultiplexing) OTDM(OpticalTime-DivisionMultiplexing)BenefitsofWDMtechniques FlexibilityandscalabilityforavarietyofnetworkarchitecturesWDMtechniquesarethebackboneofmodernopticalfibernetworks2022/12/112StateKeyLabonIntegratedOptoelectronics2022/12/113StateKeyLabonIntegratedOptoelectronics2022/12/114StateKeyLabonIntegratedOptoelectronicsKeyDevicesforWDMOpticalFiberNetworkSystemsLightSourcesLow-costuncooledLDsDirectlymodulatedLDsModulatorintegratedDFBLDsWavelengthtunable/selectableLDsHigh-SpeedPhotodetectorsSOAandWavelengthConverterAWGandRelated2022/12/115StateKeyLabonIntegratedOptoelectronics2022/12/116StateKeyLabonIntegratedOptoelectronicsLow-CostUncooledLDsApplicationsAccessnetworkMetropolitantransmissionBitrate:155MB/s(FP-LDs)~10Gb/s(DFB-LDs)Requirements

WidetemperaturerangeoperationCost-effectivestructurefordevicefabricationHighefficiencyandlargetoleranceforcouplingoutputlightintoasinglemodefiber2022/12/117StateKeyLabonIntegratedOptoelectronicsUncooledGain-CoupledDFBLDsStablesinglemodeoperationfrom-40to85C

Integratedbeam-expanderforimprovedcouplingtoleranceGain-coupledDFBlaserswithcurrent-blockinggratings2022/12/118StateKeyLabonIntegratedOptoelectronicsDirectlyModulatedDFBLDsApplicationsGigabitEthernetMetropolitantransmissionBitrate:upto10Gb/sWavelength:1.3m&1.55mLimitationsLimitedtransmissionspan(<20km)duetolargelinewidthenhancementfactor(>4)

Modulationspeedislimitedbycarrierrelaxationoscillation2022/12/119StateKeyLabonIntegratedOptoelectronics10Gb/sDirectlyModulatedDFBLDsfor

MetropolitanDataTransmissionSmall-signalRFResponseBERCharacteristics2022/12/1110StateKeyLabonIntegratedOptoelectronicsEAModulatorIntegratedDFBLDsApplicationsTrunklinetransmissionBitrate:2.5Gb/s~40Gb/sAdvantagesCompactsizeLowcouplinglossLowfrequencychirpingReducedcostImprovedreliability2022/12/611StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsforTrunkLineCommunicationsTransmissionlength:100kmFeature:Lowpowerpenalty(<1.5dB)&Widebandwidth(~14GHz)2022/12/612StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsEyeDiagramBERPerformance2022/12/613StateKeyLabonIntegratedOptoelectronicsWavelengthTunable/SelectableLDsAdvantagesAbilitytorestorefailedchannelsReducedtransmittercostIncreasedflexibilityforfuturenetworkmanagingWavelengthTunablevs.WavelengthSelectableWavelengthTunableLDs:BasedonDBRstructuresCompactdevicestructurePoorreliability&ElectriccrosstalkathighfrequencyWavelengthSelectableLDs:BasedonDFBLDarraysRelativelycomplicateddevicestructureImprovedreliabilityandwavelengthstability2022/12/614StateKeyLabonIntegratedOptoelectronicsMulti-rangeWavelengthSelectableLDsForuseinback-up&add-dropinDWDMphotonicnetworkDFB-LDsintegratedwithMMIcoupler,SOA,andEAmodulatorCompactsize(400m2840m)2022/12/615StateKeyLabonIntegratedOptoelectronicsMulti-RangeWavelengthSelectableLDArraysforDWDMSystems15nm/chipwavelengthselectablerangeWavelength&ThresholdcurrentLasingSpectra2022/12/616StateKeyLabonIntegratedOptoelectronicsHigh-SpeedPhotodetectorsConventionalConfigurationsSurfaceilluminatedp-i-nphotodetectorAvalanchephotodetector(APD)LimitationsLimitedbandwidthforAPDdetectorsTrade-offbetweenbandwidthandefficiencyforsurfaceilluminatedp-i-ndetectorsCurrentTrendSideilluminatedstructureWaveguidep-i-nphotodiodes2022/12/617StateKeyLabonIntegratedOptoelectronicsWidebandWaveguidePhotodiodefor40Gb/sSystemsMonolithicreceivercomposedofmultimodewaveguidep-i-nphotodiodeandaHEMTdistributedamplifier2022/12/618StateKeyLabonIntegratedOptoelectronicsMonolithicReceiverOEICModule

for40Gb/sSystemsBERofRecei