等离子技术培训

等离子技术讲座:

等离子原理及其应用PLASMATRAININGPROGRAM目录Agenda等离子技术在高级封装工业的应用

ApplicationofPlasmaTechnologyinAdvancedPackagingIndustries.等离子技术简介

IntroductiontoPlasmaTechnology

March公司产品介绍

ProductsofMarchPlasmaSystems

等离子技术在高级封装工业的应用PlasmaApplicationinAdvancedPackagingIndustries综述Overview:微电子工业MicroelectronicIndustryFlash,EEPROMDRAM,SRAMAnalog/LinearMicrocontrollers,Microprocessors,MicroperipheralsASIC光电子工业OptoelectronicIndustryLaserDiodesFiberAssemblyHermeticPackagingMEMS印刷电路工业PrintedCircuitIndustryPrintedCircuitBoard集成电路封装面临的挑战

ICAssemblyandPackaging:SpecificChallenges不良的芯片粘结PoorDieAttachInsufficientHeatDissipationDuetoPoorDieAttach不良的导线连接强度PoorWireBondStrengthContaminationonBondPad覆晶填料FlipChipUnderfillFilletHeightofUnderfillVoidinFlipChipUnderfill剥离DelaminationLaminateMaterialsReleasingMoistureMetalLeadframeOxidation印刷电路板孔中的残余物SmearinginPrintedCircuitBoards打印记号Marking等离子体应用

PlasmaApplications表面污染物去除ContaminationRemovalWireBondingEncapsulationBallAttach(ContaminationSources:Fluorine,NickelHydroxide,Photoresist,EpoxyPaste,OrganicSolventResidue,smearinPCB,andscum)表面活化SurfaceActivationDieAttachEncapsulationFlipChipUnderfillMarking表面改性和刻蚀SurfaceModificationandEtchFluxlessSolderingCladdinglayerremovalonfiber表面活化:芯片粘结

SurfaceActivation:DieAttachProperDieAttachCriticalHeatDissipationDelaminationPlasmaTreatmentofSubstratePriortoDieAttachPromotesAdhesionofEpoxyRemovesOxidationForGoodSolderReflowBetterBondBetweenDieandSubstrateBetterHeatDissipationMinimizesDelamination污染物去除:导线连接

ContaminationRemoval:WireBondingPoorWireBondStrengthContaminationOxidationSmallerBondPadPitches80mmto25mmHigherRatioofContaminationtoPadandWireDeformationWeldingInhibitedByPhysicalProcess:ContaminantsActAsPhysicalBarrierChemicalProcess:ContaminantsFormBondsWithSurfacesandMinimizeAdhesionEpoxyResinBleedout污染物去除:导线连接

ContaminationRemoval:WireBondingPlasmaProcessingRemovesTraceContaminationandOxidationFromSubstratesMetalCeramicPlasticWireBondStrengthSignificantlyIncreasedThroughputIncreased:LowerPressureRequired污染物去除和表面活化:封装

ContaminationRemovalandSurfaceActivation:EncapsulationMoldingCompoundMustAdhereToDifferentCompoundsSubstrateMaterialSolderMaskDieMetalBondPadsSeveralMaterialsBondingtoOneAnotherDelaminationCanResultFromPoorSurfaceActivityandContaminationDelaminationBiggestChallengeForOrganicBasedSubstratesLaminateMaterialsAbsorbWaterFromAirandtheFluxResidueRemovalProcessTrappedMoistureReleasedFromHighTemperatures:UseorSolderingOxidationonMetalLeadframesCanInhibitAdhesionofFrametoMoldPlasmaTreatmentofBGAPackages,OtherPolymerSubstrates,andMetalLeadframesImprovesSurfaceActivityAchievesGoodAdhesionMinimizesDelamination污染物去除和表面活化:封装

ContaminationRemovalandSurfaceActivation:Encapsulation表面活化:填料

SurfaceActivation:UnderfillUnderfillRequiredinFlipChipMinimizeThermalCoefficientofExpansion(CTE)MismatchBetweenDieandSubstrateChallengeVoidFreeWickingSpeedDifficultwithLargeDiesandHighDensityBallPlacementPlasmaTreatmentIncreasesSurfaceEnergyPromotesAdhesionIncreasingWickingSpeedsDecreasedVoidingPresenceofOxidesInhibitsWireBondingLimitsGoodDieAttachmentInhibitsSolderReflowPlasmaTreatmentReducesMetalOxidesImprovesWireBondStrengthImprovesDieAttachmentImprovesSolderReflow氧化物去除

OxidesRemoval印刷线路板上的残余物清除

DesmearinginPCBSmearinginPrintedCircuitBoards(PCB)ViasMechanicallyorLaserDrilledLaminateMaterial(EpoxyResin)IsSmearedOverEdgesOfInnerMetalConductorLinesSubsequentPlatingOfTheViasMustElectricallyConnectAllTheConductorLinesSmearedResinMustBeRemovedToEnsureGoodElectricalContactPlasmaTreatmentRemovestheEpoxyResinsProducingCarbonDioxideandWater集成电路封装中等离子工艺的应用

ICAssemblyandPackaging:PlasmaSolutionsImprovesDieAttachImprovedWireBondStrengthWithMinimalProcessRequirementsEffectiveEncapsulationofMetalandOrganicBasedPackagesMinimizesVoidsinFlipChipUnderfillDesmearinginPrintedCircuitBoards等离子工艺的其它应用

OtherPlasmaApplicationsSurfaceActivationofNumerousMaterials:Polymers,andMetals材料表面的活化ThinFilmEtch:Al,Si,SiO2,Si3N4,W,WSixOrganicRemoval去除有机污染物OxideRemoval去除氧化物ResidualFluorineRemoval去除氟的残物HydrophilationHydrophobationPlasmapolymerizationPECVD关键参数

CriticalProductParametersProductType处理方式Metalvs.LaminateChemicalSensitivityTemperatureSensitivityProductHandling产品放置MagazineSingleStripProcessRequired工艺的要求ContaminationRemovalSurfaceActivationThroughput产量的要求Uniformity均匀性要求等离子工艺参数

ParametersForPlasmaProcessingPowerSupplyFrequencyandPower电源的功率和频率ChamberandElectrodeConfiguration腔体的结构Pressure气压GasandConcentration工艺气体的选择Time处理的时间PumpingSpeed真空泵的速度ProductPositioning产品的位置ParametersFunctionofProductType单一工艺不适合所有的应用

SingleProcessWillNotWorkForAllApplications等离子技术及集成电路封装工艺的知识是成功应用的关键

KnowledgeOfICPackageandPlasmaTechnologyCriticalForSuccessfulApplicationMARCH拥有等离子应用的专家解决你的问题MarchMaintainsExpertsTrainedInPlasmaTechnologyToSolveYourProblemMarch等离子技术PlasmaTechnology等离子体简述

Plasma:What,Why,How什么是等离子体What?GasPhaseMixtureConsistsof:Neutral,PhysicallyActiveandChemicallyReactiveSpecies如何工作How? ByPhysicalBombardmentandChemicalReactiontoRemoveContaminationActivateSurfaceEtch

为什么要用等离子体技术Why?ImprovesYieldsandEnhancesReliabilityofICPackagesImprovesAdhesionofWireBonds,DieAttach,andMoldingEaseofUse,EnvironmentallyBenign,LowCoO什么是等离子体

WhatisaPlasma?FourthStateofMatter固态

液态

气态

等离子态SolidLiquidGasPlasma

EnergyEnergy

Energy什么是等离子体

WhatisaPlasma?等离子体的组成

ComponentsofaPlasma电子Electrons离子IonsPositiveAr+e-Ar++2e-

NegativeCl2+2e-2Cl-

自由基FreeRadicals:CH4+e-

.CH3+.H+e-光子PhotonsAr+e-Ar*+e-Ar+e-+hn

中性粒子Neutrals等离子体特性

PlasmaProperties高能量态

HighEnergyStatePhysicalWorkChemicalWork电中性的

ElectricallyNeutralEqualNumbersOfPositiveandNegativeSpeciesDegreeofDissociation=0.1-0.01%ElectricallyConductive表面反应机理:物理反应

SurfaceReactionMechanisms:PhysicalPhysicalSputtering-ArgonPlasmaSubstratePlacedon(-)ElectrodeAr+IonAttractedto(-)ElectrodeImpactForceRemovesContaminationAdvantagesNon-ChemicalReaction:NoOxidationPureSubstrateRemainingDisadvantages-EasytoMinimizeSubstrateDamage:Impact,andOverheatingPoorSelectivityLowEtchRateContaminantRedeposition表面反应机理:化学反应

SurfaceReactionMechanisms:ChemicalPlasmaGeneratedReactive ChemicalSpeciesSourceChemicalsInclude: H2,O2andCF4IonizedSourceChemical ProducesReactiveSpeciesGasPhaseProductsProducedFromReactions

withSubstrateSurfaceAdvantagesHighCleaningSpeedHighSelectivityEffectiveforOrganicContaminantsDisadvantages-OxidesCanBeProduced表面反应总结

SummaryofSurfaceReactionMechanisms等离子技术的优点

AdvantagesofPlasmaTreatmentVeryEffectiveforSurfaceCleaning,Activation,andEtchingEnvironmentallyFriendly-LowGasFlowNon-Hazardous非危险NoAqueousChemicalsUsedNoPersonnelExposuretoChemicalsThreeDimensionalTreatmentCapability(3D处理)ControllableLowCostOfOwnershipMinimalMaintenanceEaseofUse-AutomatedHighUniformityandReproducibility等离子工艺

PlasmaProcess气相---固相表面相互作用

GasPhase-SolidPhaseInteractionPhysicalandChemical分子级污染物去除

MolecularLevelRemovalofContaminants30to300Angstroms可去除污染物包括ContaminantsRemoved难去除污染物包括DifficultContaminants

FingerPrintsFluxGrossContaminantsOxidesEpoxySolderMaskOrganicResiduePhotoresistMetalSalts(NickelHydroxide)等离子体的产生

GeneratingaPlasma等离子体的产生

GeneratingaPlasmaGasToBeIonizedChamberWithElectrodesMaterialsAluminumStainlessSteelGlass:Quartz,PyrexConfigurationBarrelCylindricalUsuallyGlassExternalElectrodesParallelPlateBoxInternalElectrodes:Powered,Grounded,orFloatingCustom等离子体的产生

GeneratingaPlasmaVacuumPumpMilliTorrProcessRequirements(50mTorr-500mTorr)RapidlyRemoveByproductsRotaryVanePumpRootsBlowerPowerSupplyEnergySourceVariousFrequencies2.45GHz13.56MHz40kHzDCVariousPowers等离子体的重要特性

ImportantPropertiesofaPlasma等离子工艺优化

EffectivePlasmaProcessingRequiresOptimum:PhysicalProcessesChemicalProcesses等离子工艺参数

PlasmaPropertiesThatDictateProcessPerformance:IonDensityIonEnergyDCBias等离子体的电子和离子特性

PlasmaElectronandIonProperties离子密度

IonDensityNumberofIonsperUnitVolumeTypically1Ionper10,000Neutrals100Radicalsper10,000NeutralsHigherIonDensity=HigherNumberofReactiveSpeciesHighNumberofActiveSpecies= IncreasedSpeed, andUniformityRequiresEfficientCouplingofPower等离子体的电子和离子特性

PlasmaElectronandIonProperties离子能量

IonEnergyEnergyofIonToDoWork=SputteringSputteringChargedSpeciesCollidesWithSurfaceEnergySufficientToBreakBondsSurfaceMaterialReleasedNarrowRangeExcessIonEnergy=UnwantedSputteringTooLowIonEnergy=NoSputteringorSlowProcess等离子体的电子和离子特性

PlasmaElectronandIonProperties直流偏压

SelfDCBiasNegativeDCBiasAtPowerElectrodeCapacitivelyCoupledElectronsRespondtoAlternatingElectricalFieldCapacitorPreventsElectronFlowAtPowerElectrodeElectronsAtGroundElectrodeFlowToGroundPotentialElectronBuildUpAtElectrodeCausesPotentialDifferenceBetweenPoweredandGroundElectrodes=SelfDCBiasDCBiasIncreasesIonEnergyDirectionalityofIonsImportantParameters:Pressure,Power,ProcessGas等离子处理模型

PlasmaModesDirectSamplePlacedDirectlyInDischargeSamplesPlacedOnGroundorPowered Electrodes:ApplicationDependentAggressiveDownstream(Shielded)PlasmaGeneratedDownstreamOfSamplesGasPhaseActiveSpeciesDirectedToSampleIonsRemovedRadicalsandPhotonsPerformWorkReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBiasDirectPlasma:Argon(Ar)DirectPlasma:Oxygen(O2)Downstream:Ion-FreePlasmaDownstream:Ion-FreePlasma等离子处理模型

PlasmaModesReactiveIonEtch(RIE)DirectandAnisotropicSamplesPlacedOnPoweredElectrode:SelfBias成功应用的关键参数

CriticalParametersForSuccessfulApplicationPowerSupplyFrequencyandPowerChamberandElectrodeConfigurationPressureGasandConcentrationTimePumpingSpeedProductPositioningParametersFunctionofProductType电源功率及频率

PowerSupplyFrequencyandPowerGeneralTrend:HigherFrequency=LowerIonEnergyHigherFrequency=HigherIonDensityHigherPowerIncreasesEtchRateIncreasesTemperaturePowerSuppliesDCLowFrequency(40kHz-100kHz)MediumFrequency(13.56MHz)HighFrequency(2.45GHz)为什么选择频率13.56MHz?Frequency:Why13.56MHz?IonEnergyIonDensityPowerFrequencyDC 40-100kHz 13.56MHz 2.45GHz真空腔及电极组合

ChamberandElectrodeConfigurationBarrelExternalElectrodesNon-UniformPlasmaParallelPlateInternalElectrodesPolarityPoweredHigherEtchRate,HigherTemperature,LowerUniformityGroundLowerEtchRate,LowerTemperature,HigherUniformityFloating气体及浓度

GasandConcentrationArgon(Ar)InertPhysicalProcess:SurfaceBombardmentAr+e-Ar++2e-Ar++ContaminantVolatileContaminantTwotoFiveNanometersRemovedApplications:OxideRemoval,EpoxyBleedoutOxygen(O2)ChemicalProcess:OxidationofNon-VolatileOrganicsO2+e-2O.+e-O.+OrganicCO2+H2ORateFunctionofGasConcentration=HighPressureCanOxidizeSurfacesandDamageLaminatesMinimizeWithArorAr/O2气体及浓度

GasandConcentrationHydrogen(H2)ChemicalProcessApplicationsRemoveOxidationOnMetalsCleanMetalsWithoutOxidationCarbonTetrafluoride(CF4)NormallyMixedWithOxygenChemicalProcessFreeRadicalsReact=CO2,H2O,andHFHigherEtchRate=HigherPressureOtherGases:Helium,Nitrogen,FormingGas,SulfurHexafluoride气体及浓度

GasandConcentration化学清洗工艺化学清洗工艺物理清洗工艺气体压力

PressureAverageForceOfGasMoleculesOnChamberWallChamberPressureGasFlowOutgassingRatePumpingSpeedInGeneralHigherPressures(200-800mTorr)=ChemicalProcessesHigherPressure=LargerConcentrationofReactiveSpeciesHighConcentration=FasterEtchRatesLowerPressures(50-200mTorr)=PhysicalProcessesLowerPressure=LongerMeanFreePathLongMeanFreePath=HigherEnergyOfIons处理时间

ProcessingTimeLongerProcessTime=MoreMaterialRemovedBalanceProcessTimeWithPower:HigherPower=FasterEtchRatePressure:HigherPressure=FasterEtchRateGasTypeandConcentrationChamberElectrodeConfigurationMinimizeTime=MaximizeThroughput样品位置

ProductPositioningDirectOpenPlacementOnShelvesCarrierorMagazine

RequireLowerPressuresForLongerMeanFreePathsEasyToGetReactiveSpeciesIntoCarrierChemicalOrPhysicalProcessPitchIsCriticalUniformityChallenges在清洗盒中处理TreatmentIn

MagazineTypicalPlasmaCondition:Lowsystempressure(about100mTorr)isrequired.IncreasethemeanfreepathDecreasethehotspotsinchamberPitchshouldbelargerthan6mm.Theopenslotonthesidewallofmagazineisrequired.真空泵速度

PumpingSpeedPumpRequiredToMaintainVacuumSweepAwayPlasmaByproductsMinimizeRe-contamination等离子工艺中可能的问题:温度

PlasmaProblems:TemperaturePlasticPartsareSusceptibletoHighTemperatureFactorsThatEffectTemperatureSubstrateMaterialofConstructionConductive-MetalLeadframesNonconductive-BGAPlacementofPartsonElectrodeGround:CoolerTemperature,LongerProcessTimesPowered:HotterTemperature,ShorterProcessTimesProcessPowerandFrequencyHigherPower=HigherTemperatureLowerFrequency=HigherTemperature40kHz>>13.56MHzProcessGasandGasFlowHigherGasFlow=LowerTemperature等离子工艺中可能的问题:温度

PossibleProblemsInPlasma:TemperatureFactorsThatEffectTemperatureProcessTimeLongerProcessTime=HigherTemperatureChamberTemperatureTypically<1250CPXProductLineHasOptionalLiquidCooledShelves等离子工艺中可能的问题

PossibleProbleminPlasma均匀度UniformityGasSupplyandRemovalShouldBeUniformChemicalProcessesTypicallyHaveHigherUniformityLongerMeanFreePath-LowerPressuresForPhysicalProcessesCanHelp表面变色DiscolorationHeatBuildUpComplexPartsCanCreatePlasmaHotSpots处理寿命TreatmentLongevity FunctionOfSubstrateMaterialHumidityOutgassingofPlasticizersandMoldReleaseCompounds等离子工艺中可能的问题

PossibleProblemsInPlasma荷载影响

LoadingEffectMaterialsOutgasUnderVacuumEffectsPumpDownTimeBasePressureDisplaceProcessGasesAmountofSubstrateMaterialinChamberEffectsProcessMaterialQuantityCanAffectPlasmaDensityGasSupplyCouldBeInsufficient副产品

ByproductsOvertime,CF4WillPolymerizeOnChamberWallsandCanDepositonTheSubstrateSurfaces表面接触角检测

ContactAngleMeasurements(CAM)ContactAngleIndicatesSurfaceEnergyCharacterizesInterfacialTensionSolid-LiquidDropLowSurfaceEnergySolid(Hydrophobic)LiquidSurfaceTension>SolidSurfaceEnergyLiquidFormsSphericalShapeHighSurfaceEnergySolid(Hydrophilic)LiquidSurfaceTension<SolidSurfaceEnergyLiquidFormsLowProfileFlatterDropletViewDropletsOfLiquidOnSurfaceLineTangentToCurveOfDropletAngleBetweenTangentLineandSolidSurfaceMarch等离子技术PlasmaTechnology(NotAllPlasmaSystemsAreTheSame)+集成电路封装技术ICPackagingTechnology(NotAllPackagesAreTheSame)成功应用SuccessfulApplicationofPlasmaTechnologyforIntegratedCircuitPackagingMarch产品MarchProductsBatchvs.AutomatedEquipmentSolutionsAP-1000e8AP-1000BatchSystemSolutions

AP-1000FlexibleShelfConfigurationCompleteSystemEnclosurePLCControllerVerticalDoorOptione8OptionCEandSEMIS2-93CompliantApplicationsMagazineTreatmentAuerBoatProcessingWaferCleaningMCMCarriersBoardsAP1000VerticalDoor

HigherthroughputsImproveduniformityMatrix/ArrayPkgsMetalLeadframesAP-1000e8MultiTRAKITRAKAutomatedSystemSolutionsXTRAK

AutomatedSystemSolutionsUnparalleledUniformityCompactChamberDesignBalancedGasFlowUniqueVacuumExhaustGuaranteedRepeatabilityStripbyStripProcessingClosedorOpenMagazinesNoPitchRestrictionsSpeedTotalOverheadTime:SecondsInfeedVacuumandPlasmaOutfeed

StripSizedChamber

ITRAKWidth38-78mmLength178mm-235mmXTRAKWidth16-154mmLength76-305mmPLCControlledwithTouchScreenIntuitiveGraphicalUserInterfaceStatisticalDataGathering(SEMIE-10)CompleteSystemEnclos