模拟电路分析与设计英文ch

HuazhongUniversityofScienceandTechnologyTheDepartmentofElectronicsandInformationEngineeringFirstTerm08/09ElectronicCircuitAnalysisandDesignDr.

TianpingDengEmail:dengtp@整理pptPART1SEMICONDUCTORDEVICESANDBASICAPPLICATIONS

Chapter1SemiconductorMaterialsandDiodesChapter2DiodeCircuitsChapter3TheField-EffectTransistorChapter4BasicFETAmplifiersChapter5TheBipolarJunctionTransistorChapter6BasicBJTAmplifiersChapter7FrequencyResponseChapter8OutputStagesandPowerAmplifiersPART2ANALOGELECTRONICS

Chapter9IdealOperationalAmplifiersandOp-AmpCircuitsChapter10IntegratedCircuitBiasingandActiveLoadsChapter11DifferentialandMultistageAmplifiersChapter12FeedbackandStabilityChapter13OperationalAmplifierCircuitsChapter14NonidealEffectsinOperationalAmplifierCircuitsChapter15ApplicationsandDesignofIntegratedCircuitsContentsChapter1SemiconductorMaterialsandDiodes整理pptCh1.SemiconductorMaterialsandDiodes1.1SemiconductorMaterialsandProperties1.2ThePNJunction1.4DiodeCircuitsACEquivalentCircuit1.3DiodeCircuitsDCAnalysisandModels1.5OtherDiodeTypes1.6DesignApplication:DiodeThermometer1.7Summary整理ppt1.1SemiconductorMaterialsandProperties1.1.1IntrinsicSemiconductor1.1.2.ExtrinsicSemiconductorN-typesemiconductorP-typesemiconductor整理pptCh1.SemiconductorMaterialsandDiodes1.1SemiconductorMaterialsandPropertiesMaterialsConductorInsulatorSemiconductor:conductionelectrons__electricalconductivity:electronsinbondingmechanism__cannotmove:silicon,germanium,galliumarsenide1.1.1.IntrinsicSemiconductor整理pptSiliconValley整理ppt1.1.1IntrinsicSemiconductor1.Silicon,germanium__single-crystalstructureAttemperatureT=0oK,siliconisaninsulator.整理ppt1.1.1IntrinsicSemiconductorEachSiatomsharesoneelectronwitheachofitsfourclosestneighborssothatitsvalencebandwillhaveafull8electrons.+4+4+4+4整理ppt1.1.1IntrinsicSemiconductor2.WhenTincreases,freeelectronsand“holes”arecreatedInpuresemiconductor,theconcentrationofelectronsandholesareequal,andverysmall,soithasverysmallconductivity.整理pptIncreasingtemperature,generatingelectron-holepairs整理pptFreeelectronproducedbythermalionization.Itcanmovefreelyinthelatticestructuresoastoformcurrent.Holeemptypositioninbrokencovalentbond.Itcanbefilledbyfreeelectron(recombination)andcanalso“move”freelytoformcurrent.CarriersAfreeelectronisnegativechargeandaholeispositivecharge.整理ppt1.1.1IntrinsicSemiconductorAholecanberegardedasapositivechargecarrierDoestheholecanmovethroughthecrystalfreely?整理ppt整理ppt1.1.2.ExtrinsicSemiconductor1.phosphorus+silicon=N-typesemiconductorHolespresentbecauseofthermalenergyWhatarethemajoritycarriersinn-typematerials?Whataretheminoritycarriersinn-typematerials?RedundantelectronN-typesemiconductorDonorImpurityPositivechargeN-typesemiconductormaterial(phosphorus)donor:providefreeelectronsmajoritycarrier–electronsminoritycarrier–holes整理pptDopedSemiconductor——ntypeSiSiSiSiSiSiSiSiSiP＋DonorFreeEboundcharge

整理ppt整理pptDonorpentavalentimpurityprovidesfreeelectrons,usuallyentirelyionized.Positiveboundcharge---impurityatomdonatingelectrongivesrisetopositiveboundcharge.Majoritycarriers---freeelectrons(mostlygeneratedbyionizeddonorandaverytinyportionbythermalionization).Minoritycarriers---holes(onlygeneratedbythermalionization).ntypeSemiconductor整理ppt1.1.2.ExtrinsicSemiconductorP-typesemiconductorMotionofholesHoleAcceptorImpurityNegativechargeWhatarethemajoritycarriersinP-typematerials?WhataretheminoritycarriersinP-typematerials?2.boron+silicon=P-typesemiconductor

P-typesemiconductormaterial(Boron)

acceptor:acceptanextraelectronsmajoritycarrier–holesminoritycarrier–electrons整理pptDopedSemiconductor——ptypeBoundchargeSiSiSiSiSiSiSiSiSiAlAl––HoleAcceptor整理ppt整理pptAcceptortrivalentimpurityprovidesholes,usuallyentirelyionized.Negativeboundcharge---impurityatomacceptingholegiverisetonegativeboundchargeMajoritycarriers---holes(mostlygeneratedbyionizedacceptorandatinysmallportionbythermalionization)Minoritycarriers---freeelectrons(onlygeneratedbythermalionization.)ptypeSemiconductor整理ppt1.1.2.ExtrinsicSemiconductor2.boron+silicon=P-typesemiconductor1.phosphorus+silicon=N-typesemiconductorPositiveCharges+holes=electronsNegativeCharges+electrons=holesmajoritycarrierminoritycarrierDopingTemperaturemajoritycarrierDopingminoritycarrierTemperature整理pptMajoritycarrierisonlydeterminedbytheimpurity,butindependentoftemperature.Minoritycarrierisstronglyaffectedbytemperature.Ifthetemperatureishighenough,characteristicsofdopedsemiconductorwilldeclinetotheoneofintrinsicsemiconductor.Conclusiononthedopedsemiconductor整理ppt1.1.2.ExtrinsicSemiconductorDiffusion:aconcentrationofchargecarrierstendstospreadwithtime整理ppt1.1.2.ExtrinsicSemiconductorDiffusion:aconcentrationofchargecarrierstendstospreadwithtimeDrift:Theaveragemotionofthechargecarriersduetoanappliedelectricfield.整理ppt1.2ThePNJunction1.2.1TheEquilibriumPNJunction1.2.2Forward-BiasedPNJunction1.2.3Reverse-BiasedPNJunction1.2.4PNJunctionDiode整理ppt1.2ThePNJunction1.2.1TheEquilibriumPNJunctionNPholeElectronHolesdiffusefromP-toN-region.ElectronsdiffusefromN-toP-region整理ppt1.2ThePNJunction整理ppt1.2.1TheEquilibriumPNJunction1.Depletionregion(space-chargeregion)_PNjunctionDepletionregionPNJunctionElectricfield2.ElectricfieldNP整理ppt1.2.1TheEquilibriumPNJunction3.DriftcurrentIDR

=diffusioncurrentIDF_Balance1.Depletionregion(space-chargeregion)_PNjunction2.ElectricfieldIDFIDRNP整理ppt1.2.1TheEquilibriumPNJunction Theprocedureofformingpnthedynamicequilibriumofdriftanddiffusionmovementsforcarriersinthesilicon.Indetail,thereare4steps:DiffusionSpacechargeregionDriftEquilibrium整理ppt1.2.2Forward-BiasedPNJunctionPositivevoltageisappliedtoP,forward-biasedPN.1.Depletionregionisreduced,lowresistance.2.MajoritycarriersflowacrossPNjunctionmoreeasily.IDF>>IDR,iD=IDF－IDRvDD-regionelectricfieldAppliedelectricfieldiDvDThetwofieldsareopposite.Theresultsare:整理ppt1.2.2Forward-BiasedPNJunction整理ppt1.2.2Forward-BiasedPNJunction3.Thecurrent-voltage(v-i)characteristicThecurrentisanexponentialfunctionofvoltage.

4.V

__turn-on,cut-involtageIS__reverse-biassaturationcurrentVT__thermalvoltageatroomtemperatureVT=0.026V整理pptvD1.2.3Reverse-BiasedPNJunctionPositivevoltageisappliedtoN,reverse-biasedPN.1.Depletionregionisincreased,highresistance.2.Majoritycarrierscannotcrossthejunction.Minoritycarriers

sweepacrossPNeasily.IDF<<IDR,iD=IDRiDvDD-regionelectricfieldAppliedelectricfieldThetwofieldsareinthesamedirection.Theresultsare:整理ppt整理ppt1.2.3Reverse-BiasedPNJunction3.ThereversecurrentflowwillbeduetothedriftcurrentIDR,knownasthereversesaturation(orleakage)currentIS.整理ppt1.2.3Reverse-BiasedPNJunction4.Whenthevoltageisincreasedtosomepoint,breakdownoccursandcurrentincreasesrapidly.Thevoltageatthispointiscalledthebreakdownvoltage.5.AvalanchebreakdownZenerdiodeoperateinthebreakdownregion整理ppt1.2.3Reverse-BiasedPNJunction6.JunctioncapacitanceCjVR__appliedvoltageVbi__build-involtageVR整理ppt1.2.4PNJunctionDiode1.Diode__hasonePNjunctioninitcircuitsymbolPhotoofrealdiode整理ppt1.2.4PNJunctionDiode2.TemperatureEffect

T1>T0T1T0ISandVTarefunctionsofT.Tincreases→requiredforward-biasvoltagedecrease整理ppt1.2.4PNJunctionDiode3.SwitchingTransientStoragetimets

Turn-offtimetfWhenforward-bias,excesscarrierisstoredinbothregions.

Whenswitchingfromforwardtoreverse,itneedtimetoremove.整理ppt1.3DiodeCircuitsDCAnalysisandModels1.3.1Models1.3.2DCAnalysis整理ppt1.3DiodeCircuits_DCAnalysisandModels1.3.1Models1.IdealmodelDescribingi-vcharacteristic,whenanalyzingcircuit(a)(b)(c)整理pptCase2Case11.3.1Models2.PiecewisemodelTwolinearapproximations整理ppt1.3.2DCAnalysisE.g.1.1Determinethediodevoltageandcurrentforthecircuitshowninfigure,AssumeSol:FordiodeForRandVPSbranch(a)Diodecircuit(b)ConventionalcircuitPSPSVPS=5V,R=2kFindtwospecialpoints(5V,0mA)and(0V,2.5mA)

(1)usingthegraphicalanalysis.Intersection__quiescentpointorQ-pointVDID整理ppt整理ppt1.3.1Models3.Smallsignalmodel__ACmodel

Whenadiodeisoperatinginthesmallrange，itcanbeasmall-signalincrementalresistance.Thatis:∵small-signalconductance∴RoomT（T=300K）整理ppt1.3.2DCAnalysis(2)usingthemodelanalysis.IdealModelPiecewisemodel__1（SiliconDiode）(a)Diodecircuit(b)ConventionPSPSPiecewisemodel__2Assume（SiliconDiode）VD=V+IDrf

=1.09V整理ppt1.4DiodeCircuits_ACEquivalentCircuit1.4.1SinusoidalAnalysis整理ppt1.4.1SinusoidalAnalysisE.g.1.2.DeterminetheoutputvoltageinFig.1.31.Assumecircuitandparameterof

VPS=5V,R=2k,Vr=0.6V,andvi

=0.1sinwt(V).Sol:

because(1)FortheDCanalysis,wesetvi

=0,then(2)FortheACanalysis,wesetVPS

=0,thenFig.1.31整理ppt整理ppt1.5OtherDiodeTypes1.5.1SolarCell1.5.2Photodiode1.5.3Light-EmittingDiode(LED)1.5.4SchottkyBarrierDiode1.5.5ZenerDiode整理ppt1.5OtherDiodeTypes1.5.1SolarCellItgetspowerfromthesolararrayandcanbeusedeithertopoweranelectricmotorortochargeabatterypack.整理ppt1.5OtherDiodeTypes1.5.2PhotodiodeItconvertsopticalsignalsintoelectricalsignals.155Mbps622Mbps2.5Gbps10Gbps40GbpsTrunk-lineMetro-coreMetro-accessData-comAccessDFB/MODCW+LockerCoaxialLD&PDAPD+ampOSA10G-APD+TIA10G-PIN+TIAUncooled10G-LD40G-PIN(R&D)CanLD整理ppt1.5OtherDiodeTypes1.5.3Light-EmittingDiode(LED)Itconvertscurrentintolight.E/O整理ppt整理ppt整理ppt1.5OtherDiodeTypes1.5.4SchottkyBarrierDiodeThereisnominoritycarrierstorageintheSchottkydiode,sotheswitchingtimefromaforwardbiastoareversebiasisveryshortcomparedtothepnjunctiondiode.整理ppt1.5.5ZenerDiode1.SymbolandI-Vcharacteristic(a)symbol(b)I-VcharacteristicZenerdiodescanbeoperatedinthebreakdownregionbylimitingthecurrenttothecapabilitiesofthediodes.整理ppt1.5.5ZenerDiode2.ParametersVZ__ZenerbreakdownvoltagerZ=VZ/IZrZ__IncrementalresistanceIZ__Reverse-biascurrentwhenthediodeisoperatinginthebreakdownregion.整理ppt3.ZenerDiodeCircuits

E.g.1.3

AssumeZenerdiodeVZ=5.6V,rZ=0andIZmax=3mA,findthevalueofresistance.Sol:Question:CanweeliminatetheR?Why?IfVPSisreplacedbysinusoidalinputvoltagevi=15sinwt(V),plotoutputvoltagevOversusvi.整理pptIfVIisthesinwave,andVom>VZ.VO=?整理pptThinkabout:Doestheoutputvoltagecanequal6V?整理pptSol:整理pptWhichisbiggerbetweenUOandUZ?AssumeTheoutputvoltagecan’tequal6VUO<UZIfwewanttheoutputis6V,R整理ppt4.IdealVoltageReferenceCircuit(1)Zenerdiodeisusefulinavoltageregulator,oraconstant-voltagereferencecircuit.(3)WhenILisamax,andVPSisamin,IZisamin.WhenILisamin,andVPSisamax,IZisamax.DuetoWeobtain

and

(2)RilimitsIzanddropsthe“excess”voltagebetweenVPSandVZ.整理ppt4.IdealVoltageReferenceCircuitEquatingthesetwoexpressions,weknowVPS(min)andVPS(max),andassumeIZ(min)=0.1IZ(max).ThenwecandetermineRi

andmaxpowerratingPZ(max)ofZenerdiode.整理pptE.g.1.4

(page66)Sol:fromEquation(3)IL(min)=0,IL(max)=100mA,VPS

=11-13.6V,VZ

=9V.DesignRiandPZ(max).fromEquation(2)MaxpowerdissipatedinRiis整理pptDiode–Characteristic整理pptDiode–Characteristic整理pptIntrinsicSemiconductorDopedSemiconductorCarriersDiffusion,Drift整理pptSummary※GainabasicunderstandingofsemiconductormaterialpropertiesTwotypesofchargedcarriersTwomechanismsthatgeneratecurrents※Deter