光刻设备及工艺教学课件

PHOTOLITHOGRAPHY光刻设备及工艺讲座提要1.General2.Facility(动力环境)3.Mask(掩膜版)4.Processstephighlight(光刻工艺概述)5.BCD正胶工艺芝6.Historyand未来的光刻工艺GeneralMASKINGProcess(光刻工艺)■Photolithography(光学光刻)-ransferatemporarypaattern(resist)DefectcontroCriticaldimensioncontrolAlignmentaccuracyCrosssectionprofileEtch(腐蚀Transferapermanentpattern(Oxide,Nitride,metal2.0FacilityrequirementTemperature(温度)70■Humidity(湿度)45%Positivepressure(正压>0.02in/H2OParticlecontrol(微粒)cas5100Vibration(震动Yellowlightenvironment(黄光区)DIWater(去离子水)17mhomCompressairandNitrogen(加压空气,氮Inhousevacuun(真空管道)30Mask(掩膜版)DesignPGtapeMaskmakingPlate--quartz,leglass,SodalineglassCoating--Chrome,Ionoxide,EmulsionEquipment---E-beam,PatterngeneratorMaskstorage---AntistaticBoxPelliclePelliclePELLICLEPROTECTEDMASKprotectionTHENICRALIGNMB00ISEQUIPPEDTOACCEPTPELLICLEPROTECTEDMAEDWAFERPROBEYIELDSWHILEREDUCINGMASKCLEANINGCOSTSANDCREASINGMASKLIFE.THEHARDNARETOIMPLEMENTTHISFEATUREINCLUDES:NENENLARGEDMASKVACUUMRINGTOACCOMMODATEAPELLICLEFRAMENENMASKSTAGETOLOADTHEMASKONTOTHERINGL,PNEUNATITED,ELIMINATINGTHECHAINDRLDERTHATCANCARRYEITHER5x5x009"PRODUCTMASKSOR4-1/2x4-1/2x1/4SETUPMASKSPaprecisPeliteROTECTIONENSURESDIEYIELDSUSPENDINGAIRBORNEPARTICULATESWELLOUTSIDETHEMASKFOCALPL4.0光刻工艺概述Prebakeandhmds(前烘Resistcoating(涂胶)EBR(去胶边),softbake,3.Exposure(曝光)Alignment(校正)4.Develop(显影)Poste-bake,Hardbake,backsiderinse5.Developinspection(显检)4.1PrebakeandhmdstreatmentPurposeofPre-bakeandHMdstreatmentistoimprovethresistadhesiononoxidewafer.HMDSisadhesionpromoterespeciallydesignedforpositiveresist.HMDS(Hexamethyldisilane)canbeappliedonthewafersby1.Vaporinabucket2.vaporinavacuumbox3.Directlydispenseonwafer4.YESsystem---inahotvacuumsystem5.Vaporinahotplate(withexhaust)ToomuchHMDSwillcausepoorspin,viceversawillcauseresistlifting42ResistCoating(涂胶)Resistcoatingspecification(指标)Thickness(厚度)0.7u-2.0u(3.0以上forPadlayer)Uniformity(均匀度)±50A-±200ASizeofEBr(去胶边尺寸)Particle(颗粒)<20perwaferBacksidecontamination(背后污染)个主要因数影响涂胶的结果1.ResistProduct(产品ty(粘度)SpinnerD