MOS电路版图设计规则解析

设计规则解析

以TSMC0.25m硅栅N阱CMOS工艺的部分设计规则为例哈工大微电子中心来逢昌一、几点说明1.

MASKNAMES

(Layer)PW---DefinitionofP-Well.NW---DefinitionofN-Well.OD---Definitionofthinoxidefordevice,andinterconnection.PO---DefinitionofPoly-Si.PP---DefinitionofP+implantation.NP---DefinitionofN+implantation.CO---DefinitionofcontactwindowfromM1toODorPO.M1---Definitionof1stmetalforinterconnection.VIA1--Definitionofvia1holebetweenM2andM1.M2---Definitionof2ndmetalforinterconnection.CB---Definitionofbondingpad.2.

TerminologyDefinitionsforRegionN+OD:

ODcoveredwithNP.P+OD:

ODcoveredwithPP.ColdN-Well:

N-Wellconnectedtothemostpositivevoltage(Vdd).HotN-Well:

N-WellnotconnectedtothemostpositivevoltageHotN+diffusion:

allN+diffusionregionsoutsidetheN-Wellwhichhaveapotentialnotequaltothesubstratevoltage.HotP+diffusion:

allP+diffusionregionsinsidetheN-WellwhichhaveapotentialnotequaltotheN-Wellpotential.Colddiffusions:OutsideN-Well:

adiffusionwhichhasthepotentialthesameasthesubstrate.InsideN-Well:

adiffusionwhichhasthepotentialthesameastheN-Well.3.

TerminologyDefinitionsforRule

WIDTHSPACE:CLEARANCE:EXTENSION:OVERLAP:哈工大微电子中心来逢昌二、N-WellRuleNW.W.1MinimumdimensionofaNWregion

A1.2mNW.S.1MinimumspacebetweentowNWregionsB

2.0

m

withdifferentpotential

(includeNWresistor)NW.W.2MinimumdimensionofahotNWregion

A13.0m

(NWresistance)NW.S.2MinimumspacebetweentowNWregionsC

0.6

m

withthesamepotential

Mergeifspaceislessthan0.6mNWNWPWAAA1BC哈工大微电子中心来逢昌三、ThinOxideRule(activearea)OD.W.1MinimumwidthofanODregiontodefine

A0.3

m

thewidthofNMOS/PMOSOD.W.2MinimumwidthofanODregionfor

B0.3

m

interconnect(N+/orP+)

OD.S.1MinimumspacebetweentwoODregions

C0.4

m

(bothregionsareeitherinsideoroutsideaN-well)whichcanbeeitherN+toN+,P+toP+orN+toP+OD.C.1MinimumclearancefromNWedgetoaD0.15

m

N+

ODregionwhichisinsidetheNWOD.C.2MinimumclearancefromNWedgetoaN+

E0.6

mODregionwhichisoutsidetheNW(coldorhot)OD.C.3MinimumclearancefromNWedgetoaP+F0.6

mODregionwhichisinsideaNWOD.C.4MinimumclearancefromNWedgetoaP+G0.15

mODregion(forPWpickup)whichisoutsideaNWOD.C.5Minimumclearancefrompolyedgetothe

H0.32

medgeofbutteddiffusionODregionOD.S.2MinimumspaceofN+ODtoP+ODfor

I0

m

butteddiffusionP+N+N+N+P+N+P+POPOCBBN-WellP-WellP+P+(OD)FEACDGN+JIIJHButteddiffusionregionJOD.W.3AtleastonesegmentJoftheconsecutive

J0.5

m

N+/P+buttededgesofbutteddiffusionODis≥0.5um哈工大微电子中心来逢昌四、PolyRulePO.W.1MinimumwidthofaPOregionforA,B,C0.24

m

the

channellengthandinterconnect

(includepmosandnmos)PO.S.1MinimumspacebetweentwoPOregions

D,D10.4

m

onODarea(polygate)

PO.S.2MinimumspacebetweentwoPOregions

D20.36

m

onfieldoxideareaPO.C.1MinimumclearancefromanODregion

E0.14

mtoaPOonfieldoxidePO.C.2MinimumclearancefromaPOgateto

F0.4

m

arelatedODedgePO.O.1MinimumoverlapofaPOregionextendedG0.3

mintofieldoxide(endcap)PO.R.1Bentgateat90degreeangleisnotallowed*0.4

mPO.R.2MaximumlengthofPOonfieldoxideH50

mbetweentwocontactsorbetweenonecontactandPOlineendwhenPOwidth≤0.35um.PO.L.1MaximumPOlengthwhichspaceis0.4umI1.0

mandwithacontactinbetweenpolylinesPO.L.2MaximumPOlengthwhichis45degreebentI11.0

mA/BD1N+/P+POGFPON+/P+ED2CDII1POPOPOPOPOODODODODHD2M1PO.R.3Minimumpolydensitymustbegreaterthanorequalto14%

whichisderivedfromtotalpolyarea/chiparea哈工大微电子中心来逢昌五、P+S/DRule(Pplus)PP.W.1MinimumwidthofanPPregionA0.44

mPP.S.1MinimumspacebetweentwoPPregionsB

0.44

m

Mergeifthespaceislessthan0.44umPP.C.1MinimumclearancefromanPPregionC0.26

m

toanN+activeODregionPP.C.2MinimumclearancefromanPPregionC1

0.14

m

toanonbuttededgeofN-wellpick-upN+ODregionPP.C.3MinimumclearancefromanPPedgeD*,E0.32

m

toaP-ChannelPOgatePP.O.1MinimumoverlapfromanPPedgeF

0.32

m

toanODregionPP.E.1MinimumextensionofanPPregionG0.26

m

beyondaP+activeregionPP.E.2MinimumextensionofanPPregionH

0.04

m

beyondaPwellpick-upP+ODregionPP.C.5ClearancefromaPPregiontothebutted*

0.0

medgeofabutteddiffusionN+OD(insideN-well)NPN+ODPPN-WellP-WellAANPPPNPNPHP+ODP+ODP+ODN+ODN+ODCBFEDGC1PP0.3

m哈工大微电子中心来逢昌六、N+S/DRule(Nplus)NP.W.1MinimumwidthofanNPregionA0.44

mNP.S.1MinimumspacebetweentwoNPregionsB

0.44

m

Mergeifthespaceislessthan0.44umNP.C.1MinimumclearancefromanNPregionC0.26

m

toanP+activeODregionNP.C.2MinimumclearancefromanNPregionC1

0.14

m

toanonbuttededgeofP-wellpick-upP+ODregionNP.C.3MinimumclearancefromanNPedgeD*,E0.32

m

toaN-ChannelPOgateNP.O.1MinimumoverlapfromanNPedgeF

0.32

m

toanODregionNP.E.1MinimumextensionofanNPregionG0.26

m

beyondaN+activeregionNP.E.2MinimumextensionofanNPregionH

0.04

m

beyondaNwellpick-upN+ODregionNP.C.5ClearancefromaNPregiontothebutted*

0.0

medgeofabutteddiffusionP+OD(insideP-well)PPP+ODNPP-WellN-WellAAPPNPPPPPHN+ODN+ODN+ODP+ODP+ODCBFEDGC1NP0.3

m哈工大微电子中心来逢昌七、ContactRuleCO.W.1MinimumandmaximumwidthofaCO

A0.3

m

regionCO.S.1MinimumspacebetweentwoCOregionsB0.3

mCO.C.1MinimumclearancefromaCOonODC0.22

mregiontoaPOgateCO.C.2MinimumclearancefromaCOonPO

D0.28

m

regiontoanODregionCO.E.1

MinimumextensionofanODregionE0.14

m

beyondaODCOregionCO.E.2MinimumextensionofaPOregionbeyond

F0.14

m

aPolyCOregionCO.E.3MinimumextensionofaPPregionbeyond

G0.18

m

aODCOregionCO.E.4MinimumextensionofaNPregionbeyond

H0.18

m

aODCOregionCO.R.1COonactivepolygateregionisforbiddenCO.R.2Non-square(butted)contactisnotallowedFDEAN+POBCEGPPCONPEHCOCOP+哈工大微电子中心来逢昌八、Metal1RuleAABDD<1.0

m>10

mC1C1CCC1CC1CC1C2C20.4

m0.9

m0.6

m0.6

mCOCOCOCOCOM1M1M1M1M1M1M1EM1.W.1MinimumwidthofM1region

A0.32

mM1.S.1MinimumspacebetweentwoM1regions

B0.32

mM1.E.1MinimumextensionofM1regionbeyond

C0.01

m

COregionM1.E.2.MinimumextensionofM1end-of-line

C10.09

m

regionbeyondCOregion

ForCOlocatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowM1.E.1M1.S.2Minimumspacebetweenmetallineswith

D0.6

m

oneorbothmetallinewidthandlengthare>10um;

theminimumspacemustbemaintainedbetweenametallineandasmallpieceofmetal(≤10um)thatisconnectedtothewidemetalwithin1.0umrangefromthewidemetal.M1.A.1MinimumareaofM1region

E0.36

m2RecommendationMinimumandmaximumC2

0.15

m

extensionofM1island(0.6umx0.6um)beyondaCOregionwhichisastackedCO/VIAM1.R.1MinimumdensityofM1area.30%

Densityiscalculatedas

Totalmetallayoutarea/chiparea哈工大微电子中心来逢昌九、Viax(x=1,2,3,4)RuleVIAx.W.1MinimumandmaximumwidthofViax

A0.36

m

regionVIAx.S.1MinimumspacebetweentwoViaxregions

B0.35

mVIAx.E.1MinimumextensionofMxregionbeyond

C0.02

m

ViaxregionVIAx.E.2MinimumextensionofMxend-of-lineC10.09

m

regionbeyondViaxregion

ForViaxlocatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowVIAx.E.1VIAx.C.1ViaxcanbefullyorpartiallystackedonanycombinationofstackedstructuresuchasstackedViax-1../CORecommendationMinimumandmaximumextension

D0.12

m

ofMxislandwhichis0.6umx0.6umbeyond

ViaxregionCCC1DD0.4

m0.9

m0.6

m0.6

mViaxViaxMxMxEC1ViaxViaxC1MxCCC1C1ViaxBAC1C1C1CC

C>CMx—1,2,3,4哈工大微电子中心来逢昌十、Metalx

(x=2,3,4)RuleAABDD<1.0

m>10

mC1C1CCC1CC1CC1C2C20.4

m0.9

m0.6

m0.6

mViaViaViaViaViaMxMxMxMxMxMxMxEMx.W.1MinimumwidthofMxregionA0.4

mMx.S.1MinimumspacebetweentwoMxregionsB0.4

mMx.E.1MinimumextensionofMxregionbeyondC0.02

m

Viax-1regionMx.E.2.MinimumextensionofMxend-of-line

C10.09

m

regionbeyondVIAx-1region.

ForViax-1locatedatthe90degreecorner,atleastonesideofmetalextensionmustbetreatedasend-of-lineandanothersidecanfollowMx.E.1Mx.S.2Minimumspacebetweenmetallineswith

D0.6

m

oneorbothmetallinewidthandlengthare>10um;theminimumspacemustbemaintainedbetweenametallineandasmallpieceofmetal(≤10um)thatisconnectedtothewidemetalwithin1.0umrangefromthewidemetalMx.A.1MinimumareaofMxregion

E0.36

m2Mx.R.1MinimumdensityofMxarea.30%DensityiscalculatedasTotalmetallayoutarea/chiparea哈工大微电子中心来逢昌十一、Metal5(Topmetal)RuleM5.W.1MinimumwidthofM5region

A0.44

mM5.S.1Minimumspa