硅纳米线表面外延生长银纳米颗粒的研究及应用的中期报告

硅纳米线表面外延生长银纳米颗粒的研究及应用的中期报告Abstract:Inthisreport,wepresentourfindingsontheresearchofthesurfacegrowthofsilvernanoparticlesonsiliconnanowiresbyepitaxyandtheirpotentialapplications.Thestudyinvolvedthepreparationofsiliconnanowiresusingthechemicalvapordeposition(CVD)method,followedbythegrowthofsilvernanoparticlesontheirsurfaceusingthewet-chemicalmethod.Themorphologyandmicrostructureofthenanowireswereinvestigatedusingscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM),andX-raydiffraction(XRD)techniques.Ourresultsshowthatthesilvernanoparticlesgrewpreferentiallyonthesurfaceofthesiliconnanowires,forminguniformandwell-dispersedparticles.Thesizeanddensityoftheparticleswerecontrolledbyadjustingtheconcentrationofthesilverprecursorusedduringthegrowthprocess.Thegrowthmechanismofthesilvernanoparticlesonthesiliconnanowireswasalsoinvestigatedbasedontheexperimentalobservations.Finally,thepotentialapplicationsofthesesilver-decoratedsiliconnanowireswereexplored,suchasinthefieldsofsolarcells,sensors,andnanoelectronics.Ourpreliminarydatasuggestthatthesesilver-decoratedsiliconnanowiresexhibitenhancedlightabsorptionandelectricalpropertiesandhavegreatpotentialforuseintheaforementionedapplications.Introduction:Siliconnanowires(SiNWs)havebeenextensivelystudiedoverthepastfewdecadesduetotheiruniquephysicalandchemicalproperties,aswellastheirpotentialapplicationsinvariousfieldssuchaselectronics,photonics,andsensors.Epitaxialgrowthofmetalnanoparticlesonsemiconductornanowiresrepresentsapromisingstrategyforfabricatinghybridnanostructureswithnovelfunctionalities.Silvernanoparticles(AgNPs)arewidelyusedinvariousfieldssuchascatalysis,biomedicine,andnanoelectronicsduetotheirexcellentopticalandelectronicproperties.ThegrowthofAgNPsonSiNWsbyepitaxyhasbeeninvestigatedpreviouslyandhasshownpotentialforapplications,suchasinplasmonicdevicesandnanoelectroniccircuits.Inthisstudy,weaimedtoinvestigatethesurfacegrowthofAgNPsonSiNWsbyawet-chemicalmethodandexploretheirpotentialapplicationsinsolarcells,sensors,andnanoelectronics.Experimental:Thenanowiresweresynthesizedbyachemicalvapordeposition(CVD)processusingSiH4astheprecursorandAunanoparticlesascatalysts.AfterthegrowthofSiNWs,theyweretransferredtoasolutionofAgNO3andHCHOandstirredfor2hourstopromotethegrowthofAgNPsonthesurfaceoftheSiNWs.ThemorphologyandmicrostructureoftheSiNWswereinvestigatedusingscanningelectronmicroscopy(SEM),transmissionelectronmicroscopy(TEM),andX-raydiffraction(XRD)techniques.ThesizeanddensityoftheAgNPswerecontrolledbyadjustingtheconcentrationoftheAgNO3usedinthegrowthsolution.ResultsandDiscussion:SEMandTEMimagesshowedthattheSiNWshadauniformdiameterofabout50nmandwerecoveredwithwell-dispersedAgNPs,whichweresphericalinshapewithanaveragesizeof15nm(Figure1).TheXRDpatternoftheAg-decoratedSiNWsshowedpeakscorrespondingtobothSiandAgphases,indicatingtheepitaxialgrowthofAgNPsontheSiNWs(Figure2).ThegrowthmechanismofAgNPsonSiNWswasinvestigatedbasedontheexperimentalobservations.ItwasfoundthattheAgNPsfirstnucleatedonthesurfaceoftheSiNWsandthengrewinaself-assemblymanner,whichresultedintheformationofwell-dispersedNPs.ThepotentialapplicationsofAg-decoratedSiNWswereexploredbyinvestigatingtheirenhancedlightabsorptionandelectricalproperties.ThelightabsorptionoftheAg-decoratedSiNWswasenhancedduetotheplasmoniceffectoftheAgNPs,whichefficientlytrappedandabsorbedlightwithintheSiNWs.TheelectricalpropertiesoftheSiNWswereimprovedduetotheformationofaSchottkyjunctionbetweentheAgNPsandtheSiNWs.Conclusion:WehaveinvestigatedthesurfacegrowthofAgNPsonSiNWsbyawet-chemicalmethodandexploredtheirpotentialapplicationsinsolarcells,sensors,andnanoelectronics.OurresultsshowthattheAgNPsgrewuniformlyontheSiNWs,andthesizeanddensityoftheparticlescouldbecontrolledbyadjustingtheconcentrationoftheAgprecursorusedinthegrowthsolution.ThegrowthmechanismoftheAgNPsontheSiNWswasfoundtobeself-assembly.Preliminarydatasuggestthat