【《半导体激光器的产生与发展文献综述》3700字】

我国中小企业的技术创新研究半导体激光器的产生与发展文献综述激光，英文名是“Laser”，即“Lightamplificationbystimulatedemissionofradiation”（受激辐射的光放大）的缩写。1964年，钱学森先生建议将其中文名译为“激光”。它是20世纪以来，人类继原子能、计算机、半导体之后的又一重大发明，它的诞生使人类掌握了一种强大的工具，并推动了多个领域的进步。刚刚过去的2020年是激光器诞生的60周年，虽然激光的原理早在1916年就被著名科学家爱因斯坦提出ADDINEN.CITE<EndNote><Cite><Author>A.Einstein</Author><Year>1987-2010</Year><RecNum>146</RecNum><DisplayText><styleface="superscript">[1]</style></DisplayText><record><rec-number>146</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1618020913">146</key></foreign-keys><ref-typename="BookSection">5</ref-type><contributors><authors><author>A.Einstein,</author></authors><secondary-authors><author>J.Stachel</author></secondary-authors></contributors><titles><title>OntheQuantumTheoryofRadiation</title><secondary-title>ThecollectedpapersofAlbertEinsten</secondary-title></titles><volume>1-12</volume><num-vols>6</num-vols><dates><year>1987-2010</year></dates><publisher>Princeton:PrincetonUniversityPress</publisher><urls></urls></record></Cite></EndNote>[1]，但直到1960年5月16日美国科学家梅曼才首次在实验上获得了激光。他利用高强闪光灯来泵浦红宝石晶体并产生了波长为0.6943μm的激光。这是人类得到的第一束激光，梅曼也因此成为了世界上第一个将激光引入实用领域的科学家ADDINEN.CITE<EndNote><Cite><Author>Maiman</Author><Year>1960</Year><RecNum>71</RecNum><DisplayText><styleface="superscript">[2]</style></DisplayText><record><rec-number>71</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617891719">71</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Maiman,T.H.</author></authors></contributors><titles><title>StimulatedOpticalRadiationinRuby</title><secondary-title>Nature</secondary-title></titles><periodical><full-title>Nature</full-title></periodical><pages>493-494</pages><volume>187</volume><number>4736</number><dates><year>1960</year></dates><publisher>SpringerScienceandBusinessMediaLLC</publisher><isbn>0028-0836</isbn><urls><related-urls><url>/10.1038/187493a0</url></related-urls><pdf-urls><url>/32752733-77c9-4f05-a4eb-adbeea2d6700.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210408%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210408T142155Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=93b2986d81cf12603ddd4a908069c287eaf2667db24f4c00f0dac64b0e0c56ba</url></pdf-urls></urls><electronic-resource-num>10.1038/187493a0</electronic-resource-num></record></Cite></EndNote>[2]。紧接着，在1962年，美国GeneralElectric(GE)公司的Hall等人ADDINEN.CITE<EndNote><Cite><Author>Hall</Author><Year>1962</Year><RecNum>72</RecNum><DisplayText><styleface="superscript">[3]</style></DisplayText><record><rec-number>72</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617934229">72</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Hall,R.N.</author><author>Fenner,G.E.</author><author>Kingsley,J.D.</author><author>Soltys,T.J.</author><author>Carlson,R.O.</author></authors></contributors><titles><title>CoherentLightEmissionFromGaAsJunctions</title><secondary-title>PhysicalReviewLetters</secondary-title></titles><periodical><full-title>PhysicalReviewLetters</full-title></periodical><pages>366-368</pages><volume>9</volume><number>9</number><dates><year>1962</year></dates><publisher>AmericanPhysicalSociety(APS)</publisher><isbn>0031-9007</isbn><urls><related-urls><url>/10.1103/physrevlett.9.366</url></related-urls><pdf-urls><url>/26c4ed90-544e-4dad-a992-b4992332f80a.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210409%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210409T021020Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=39e29488103a6e7cb3ebaa9274925f233bd502c7f2d5df69930f36657ed4e3ef</url></pdf-urls></urls><electronic-resource-num>10.1103/physrevlett.9.366</electronic-resource-num></record></Cite></EndNote>[3]、IBM公司的Nathan等人ADDINEN.CITE<EndNote><Cite><Author>Nathan</Author><Year>1962</Year><RecNum>73</RecNum><DisplayText><styleface="superscript">[4]</style></DisplayText><record><rec-number>73</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617934573">73</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Nathan,M.I.</author><author>Dumke,W.P.</author><author>Burns,G.</author><author>Dill,F.H.</author><author>Lasher,G.</author></authors></contributors><titles><title>STIMULATEDEMISSIONOFRADIATIONFROMGaAsp‐nJUNCTIONS</title><secondary-title>AppliedPhysicsLetters</secondary-title></titles><periodical><full-title>AppliedPhysicsLetters</full-title><abbr-1>Appl.Phys.Lett</abbr-1></periodical><pages>62-64</pages><volume>1</volume><number>3</number><dates><year>1962</year></dates><urls></urls></record></Cite></EndNote>[4]和MIT林肯实验室的Quist等人ADDINEN.CITE<EndNote><Cite><Author>Quist</Author><Year>1962</Year><RecNum>74</RecNum><DisplayText><styleface="superscript">[5]</style></DisplayText><record><rec-number>74</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617934711">74</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Quist,T.M.</author><author>Rediker,R.H.</author><author>Keyes,R.J.</author><author>Krag,W.E.</author><author>Lax,B.</author><author>Mcwhorter,A.L.</author><author>Zeigler,H.J.</author></authors></contributors><titles><title>SEMICONDUCTORMASEROFGaAs</title><secondary-title>AppliedPhysicsLetters</secondary-title></titles><periodical><full-title>AppliedPhysicsLetters</full-title><abbr-1>Appl.Phys.Lett</abbr-1></periodical><pages>91-92</pages><volume>1</volume><number>4</number><dates><year>1962</year></dates><urls></urls></record></Cite></EndNote>[5]几乎同时独立地采用了GaAs作为增益介质，实现了低温脉冲条件下的激射，这是半导体激光器的首次报道。但是这些早期的半导体激光器无一例外都是同质结结构，导致其阈值电流密度（Jth）很高，通常范围在3.5×104A/cm2-1×105A/cm2之间，所以只能在低温、脉冲下工作。为了满足实用要求，科学家开始追求能够在室温和连续条件下激射的半导体激光器。1963年美国的KroemerADDINEN.CITE<EndNote><Cite><Author>Kroemer</Author><Year>1963</Year><RecNum>75</RecNum><DisplayText><styleface="superscript">[6]</style></DisplayText><record><rec-number>75</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617934964">75</key></foreign-keys><ref-typename="ConferencePaper">47</ref-type><contributors><authors><author>Kroemer</author><author>H.</author></authors></contributors><titles><title>Aproposedclassofhetero-junctioninjectionlasers</title><secondary-title>ProceedingsoftheIEEE</secondary-title></titles><periodical><full-title>ProceedingsoftheIEEE</full-title></periodical><pages>1782-1783</pages><volume>51</volume><number>12</number><dates><year>1963</year></dates><urls></urls></record></Cite></EndNote>[6]和前苏联的Alferov院士ADDINEN.CITE<EndNote><Cite><Author>Kazarinov</Author><Year>1963</Year><RecNum>77</RecNum><DisplayText><styleface="superscript">[7]</style></DisplayText><record><rec-number>77</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617936144">77</key></foreign-keys><ref-typename="Patent">25</ref-type><contributors><authors><author>Z.I.AlferovandR.F.Kazarinov</author></authors></contributors><titles><title>Semiconductorlaserwithelectricpumping</title></titles><volume>No.181737</volume><number>No.950840</number><dates><year>1963</year></dates><isbn>No.181737</isbn><urls></urls><language>Russian</language></record></Cite></EndNote>[7]几乎同时提出将窄带隙的增益介质放置于两个宽带隙材料之间从而形成异质结的结构，这种结构可以有效提高载流子的复合效率进而提高半导体激光器的电光转换效率（Wall-Plug-Efficiency,WPE）。基于此项工作，两人同时获得了2000年的诺贝尔物理学奖ADDINEN.CITE<EndNote><CiteExcludeAuth="1"><Year>2000</Year><RecNum>76</RecNum><DisplayText><styleface="superscript">[8]</style></DisplayText><record><rec-number>76</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617935559">76</key></foreign-keys><ref-typename="WebPage">12</ref-type><contributors></contributors><titles><title><styleface="normal"font="default"size="100%">Nobel</style><styleface="normal"font="default"charset="134"size="100%"></style><styleface="normal"font="default"size="100%">Physics</style><styleface="normal"font="default"charset="134"size="100%"></style><styleface="normal"font="default"size="100%">Prize-</style><styleface="normal"font="default"charset="134"size="100%">异质结激光器</style></title></titles><dates><year>2000</year></dates><pub-location>/nobel_prizes/physics/laureates/2000/</pub-location><urls><related-urls><url>/nobel_prizes/physics/laureates/2000/</url></related-urls></urls></record></Cite></EndNote>[8]。1969年，美国贝尔实验室的Panish和Hayashi成功做出了AlGaAs/GaAs的单异质结激光器，室温下Jth大小为8.6×103A/cm2ADDINEN.CITE<EndNote><Cite><Author>Hayashi</Author><Year>1970</Year><RecNum>78</RecNum><DisplayText><styleface="superscript">[9]</style></DisplayText><record><rec-number>78</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617936909">78</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Hayashi,I.</author><author>Panish,M.B.</author></authors></contributors><titles><title>GaAs–GaxAl1xAsHeterostructureInjectionLaserswhichExhibitLowThresholdsatRoomTemperature</title><secondary-title>JournalofAppliedPhysics</secondary-title></titles><periodical><full-title>JournalofAppliedPhysics</full-title></periodical><pages>150-163</pages><volume>41</volume><number>1</number><dates><year>1970</year></dates><urls></urls></record></Cite></EndNote>[9]，和同质结激光的Jth相比降低了一个量级。但在同年，前苏联的Alferov等人已经制作出了双异质结的半导体激光器ADDINEN.CITE<EndNote><Cite><Author>Alferov</Author><Year>1970</Year><RecNum>79</RecNum><DisplayText><styleface="superscript">[10]</style></DisplayText><record><rec-number>79</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617937071">79</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Alferov,Z.I.</author><author>Andreev,V.M.</author><author>Portnoi,E.L.</author><author>Trukan,M.K.</author></authors></contributors><titles><title>AlAs-GaAsheterojunctioninjectionlaserswithalowroom-temperaturethreshold</title><secondary-title>JFiz.tekh.poluprov</secondary-title></titles><periodical><full-title>JFiz.tekh.poluprov</full-title></periodical><dates><year>1970</year></dates><urls></urls></record></Cite></EndNote>[10]，且在室温下Jth为4×103A/cm2-1×104A/cm2。1970年初，Alferov等人成功研制出第一个室温下连续（Continuous-wave,CW）激射的AlGaAs/GaAs双异质结半导体激光器ADDINEN.CITE<EndNote><Cite><Author>Alferov</Author><Year>2001</Year><RecNum>147</RecNum><DisplayText><styleface="superscript">[11]</style></DisplayText><record><rec-number>147</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1618063091">147</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Alferov,ZhoresI.</author></authors></contributors><titles><title>NobelLecture:Thedoubleheterostructureconceptanditsapplicationsinphysics,electronics,andtechnology</title><secondary-title>ReviewsofModernPhysics</secondary-title></titles><periodical><full-title>ReviewsofModernPhysics</full-title></periodical><pages>767-782</pages><volume>73</volume><number>3</number><dates><year>2001</year></dates><publisher>AmericanPhysicalSociety(APS)</publisher><isbn>0034-6861</isbn><urls><related-urls><url>/10.1103/revmodphys.73.767</url></related-urls><pdf-urls><url>/fc42ada5-f991-499a-ae1e-460bcc6c86ab.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210410%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210410T135803Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=ce3f283efa113a08b3810a44d62d991ad00a7bb615be644eeeb97110e7492a55</url></pdf-urls></urls><electronic-resource-num>10.1103/revmodphys.73.767</electronic-resource-num></record></Cite></EndNote>[11]，如图1.1所示。室温下宽条激光器（Broad-arealaser,BAlaser）的Jth为940A/cm2；窄脊条激光器的Jth为2700A/cm2。仅仅一个月后，美国贝尔实验室的Panish，Hayashi和Sumski等人也独立研制出了室温下连续激射、Jth只有2.3×103A/cm2的双异质结激光器ADDINEN.CITE<EndNote><Cite><Author>Panish</Author><Year>1970</Year><RecNum>81</RecNum><DisplayText><styleface="superscript">[12]</style></DisplayText><record><rec-number>81</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617937432">81</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Panish,M.B.</author><author>Hayashi,I.</author><author>Sumski,S.</author></authors></contributors><titles><title>DOUBLE‐HETEROSTRUCTUREINJECTIONLASERSWITHROOM‐TEMPERATURETHRESHOLDSASLOWAS2300A∕cm2</title><secondary-title>AppliedPhysicsLetters</secondary-title></titles><periodical><full-title>AppliedPhysicsLetters</full-title><abbr-1>Appl.Phys.Lett</abbr-1></periodical><dates><year>1970</year></dates><urls></urls></record></Cite></EndNote>[12]。相比单异质结激光又降低了一个量级，意味着距离实用又更近了一步，半导体激光器也进入到了一个新的发展阶段——双异质结半导体激光器。图1.1第一个室温下连续工作的双异质结半导体激光器结构ADDINEN.CITE<EndNote><Cite><Author>Alferov</Author><Year>2001</Year><RecNum>147</RecNum><DisplayText><styleface="superscript">[11]</style></DisplayText><record><rec-number>147</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1618063091">147</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Alferov,ZhoresI.</author></authors></contributors><titles><title>NobelLecture:Thedoubleheterostructureconceptanditsapplicationsinphysics,electronics,andtechnology</title><secondary-title>ReviewsofModernPhysics</secondary-title></titles><periodical><full-title>ReviewsofModernPhysics</full-title></periodical><pages>767-782</pages><volume>73</volume><number>3</number><dates><year>2001</year></dates><publisher>AmericanPhysicalSociety(APS)</publisher><isbn>0034-6861</isbn><urls><related-urls><url>/10.1103/revmodphys.73.767</url></related-urls><pdf-urls><url>/fc42ada5-f991-499a-ae1e-460bcc6c86ab.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210410%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210410T135803Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=ce3f283efa113a08b3810a44d62d991ad00a7bb615be644eeeb97110e7492a55</url></pdf-urls></urls><electronic-resource-num>10.1103/revmodphys.73.767</electronic-resource-num></record></Cite></EndNote>[11]Figure1.1SchematicviewofthestructureofthefirstinjectionDHlaseroperatinginthecwregimeatroomtemperatureADDINEN.CITE<EndNote><Cite><Author>Alferov</Author><Year>2001</Year><RecNum>147</RecNum><DisplayText><styleface="superscript">[11]</style></DisplayText><record><rec-number>147</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1618063091">147</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Alferov,ZhoresI.</author></authors></contributors><titles><title>NobelLecture:Thedoubleheterostructureconceptanditsapplicationsinphysics,electronics,andtechnology</title><secondary-title>ReviewsofModernPhysics</secondary-title></titles><periodical><full-title>ReviewsofModernPhysics</full-title></periodical><pages>767-782</pages><volume>73</volume><number>3</number><dates><year>2001</year></dates><publisher>AmericanPhysicalSociety(APS)</publisher><isbn>0034-6861</isbn><urls><related-urls><url>/10.1103/revmodphys.73.767</url></related-urls><pdf-urls><url>/fc42ada5-f991-499a-ae1e-460bcc6c86ab.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210410%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210410T135803Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=ce3f283efa113a08b3810a44d62d991ad00a7bb615be644eeeb97110e7492a55</url></pdf-urls></urls><electronic-resource-num>10.1103/revmodphys.73.767</electronic-resource-num></record></Cite></EndNote>[11]与单异质结结构相比，双异质结的Jth显著减小的两个主要原因是：有源区两侧是宽带隙材料，注入到窄带隙中的载流子会被限制到其中，从而获得更高的增益；有源区材料的折射率要大于两侧包层材料，又可以将光场的大部分限制在高折射率的有源层中。图1.2不同激光器结构示意图及能带图（a）同质结；（b）单异质结和（c）双异质结Figure1.2(a)Schematicofstructureandenergybandofdifferentlasers(a)homostructure,(b)singleheterostructure(c)doubleheterostructure如图1.2及表1.1为同质结、单异质结和双异质结三种结构的对比情况，可知双异质结结构已经可以应用到实际场景之中。但是早期的双异质结结构半导体激光器的有源区厚度都比较大。1972年，贝尔实验室的CharlesHenry意识到双异质结对于电子来说类似于波导结构，当有源区厚度薄到几十纳米，即小于电子在该材料中的德布罗意波长时，电子能级在该受限方向上是一个个分裂、独立的能级，这种异质结构后来被称为量子阱。1976年，Henry与Dingle首次提出了将量子效应应用到半导体激光器中ADDINEN.CITE<EndNote><Cite><Author>RaymondDingle</Author><Year>1976</Year><RecNum>82</RecNum><DisplayText><styleface="superscript">[13]</style></DisplayText><record><rec-number>82</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617949283">82</key></foreign-keys><ref-typename="Patent">25</ref-type><contributors><authors><author>RaymondDingle,</author><author>CharlesHowardHenry</author></authors></contributors><titles><title>Quantumeffectsinheterostructurelasers</title></titles><volume>3,982,207</volume><number>556305</number><dates><year>1976</year></dates><pub-location>US</pub-location><publisher>BellTelephoneLaboratories,Incorporated,MurrayHill,N.J.</publisher><urls></urls><language>English</language></record></Cite></EndNote>[13]。与传统激光器相比，量子阱激光器所具有的优势是ADDINEN.CITE<EndNote><Cite><Author>刘磊</Author><Year>2014</Year><RecNum>83</RecNum><DisplayText><styleface="superscript">[14]</style></DisplayText><record><rec-number>83</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617950716">83</key></foreign-keys><ref-typename="Thesis">32</ref-type><contributors><authors><author><styleface="normal"font="default"charset="134"size="100%">刘磊</style></author></authors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">单芯片高性能光子晶体激光器研究</style></title></titles><volume>D</volume><dates><year>2014</year></dates><pub-location><styleface="normal"font="default"charset="134"size="100%">北京</style></pub-location><publisher><styleface="normal"font="default"charset="134"size="100%">中国科学院半导体研究所</style></publisher><urls></urls></record></Cite></EndNote>[14]：电子态密度分布呈现阶梯状，在很小的注入电流下就可实现粒子数翻转，阈值电流密度小，微分增益高；其次可以通过调整有源区的厚度来改变激射波长；特征温度高；量子效率大；具有偏振选择性等。表1.1三种激光器结构的对比情况Table1.1Thecomparisonofthethreelaserstructures同质结单异质结双异质结Jth（A/cm2）1×1058.6×1032.3×103工作条件低温脉冲室温脉冲室温连续但是由于工艺限制，初始的量子阱激光器性能甚至不如体材料双异质结激光器。随着外延生长工艺等技术的成熟与发展，如分子束外延（MolecularBeamEpitaxy,MBE）、有机金属化学气相沉积（MetalorganicChemicalVaporDeposition,MOCVD）和化学束外延（ChemicalBeamEpitaxy,CBE）技术等，其生长精度可以达到原子层厚度的水平，量子阱激光器也随之得到了巨大的发展。1981年，贝尔实验室的W.T.Tsang（曾焕天）教授利用MBE生长得到了AlGaAs/GaAs的分别限制多量子阱结构，最低Jth降低到了160A/cm2，内损耗（αi）为3cm-1，内量子效率（ηi）可达95%ADDINEN.CITE<EndNote><Cite><Author>Tsang</Author><Year>1982</Year><RecNum>84</RecNum><DisplayText><styleface="superscript">[15]</style></DisplayText><record><rec-number>84</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617951660">84</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Tsang,W.T.</author></authors></contributors><titles><title>Extremelylowthreshold(AlGa)Asgraded‐indexwaveguideseparate‐confinementheterostructurelasersgrownbymolecularbeamepitaxy</title><secondary-title>AppliedPhysicsLetters</secondary-title></titles><periodical><full-title>AppliedPhysicsLetters</full-title><abbr-1>Appl.Phys.Lett</abbr-1></periodical><pages>217-219</pages><volume>40</volume><number>3</number><dates><year>1982</year></dates><publisher>AIPPublishing</publisher><isbn>0003-6951</isbn><urls><related-urls><url>/10.1063/1.93046</url></related-urls><pdf-urls><url>/b5ef98ba-1a2a-4f00-9468-23d4704a5219.pdf?X-Amz-Algorithm=AWS4-HMAC-SHA256&X-Amz-Credential=AKIAUROH2NUQSIQZIEG4%2F20210409%2Fus-east-1%2Fs3%2Faws4_request&X-Amz-Date=20210409T070047Z&X-Amz-Expires=600&X-Amz-SignedHeaders=host&X-Amz-Signature=76b8fa43ae726eafef78b226f92d89426d319f96c88c8a76e38d3010cb13f234</url></pdf-urls></urls><electronic-resource-num>10.1063/1.93046</electronic-resource-num></record></Cite></EndNote>[15]，这相比双异质结结构激光器又有了巨大的改善。之后在1985年，A.R.Adams和E.Yablonovitch教授几乎同时提出了应变量子阱的概念ADDINEN.CITEADDINEN.CITE.DATA[16,17]，并在理论上分析了应变量子阱的一系列优势。通过将应变引入到有源区材料中，使得价带中的轻重空穴带发生分离，降低了价带的空穴有效质量和电子态密度，从而减小了半导体激光器的阈值电流密度，提高半导体激光器的性能。此外应变量子阱还可以通过提高微分增益降低线宽增强因子，从而实现线宽的减小，在半导体光子学领域中有巨大的作用。表1.2给出了双异质结（DH）、多量子阱（MQW）和应变多量子阱（SL-MQW）结构在1.5μm波长处的性能对比。可知，多量子阱结构比双异质结结构激光器的性能有显著改善，应变量子阱结构又比普通量子阱结构的性能有明显提高。表1.2三种量子阱结构的对比情况ADDINEN.CITE<EndNote><Cite><Author>潘炜</Author><Year>1999</Year><RecNum>87</RecNum><DisplayText><styleface="superscript">[18]</style></DisplayText><record><rec-number>87</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617954206">87</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"charset="134"size="100%">潘炜</style></author><author><styleface="normal"font="default"charset="134"size="100%">张晓霞</style></author><author><styleface="normal"font="default"charset="134"size="100%">罗斌</style></author><author><styleface="normal"font="default"charset="134"size="100%">吕鸿昌</style></author><author><styleface="normal"font="default"charset="134"size="100%">陈建国</style></author></authors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">垂直腔面发射半导体微腔激光器</style></title><secondary-title><styleface="normal"font="default"charset="134"size="100%">物理</style></secondary-title></titles><periodical><full-title>物理</full-title></periodical><pages>210-216</pages><volume>28</volume><number>4</number><dates><year>1999</year></dates><urls></urls></record></Cite></EndNote>[18]Table1.2ThecomparisonofthreequantumwellstructuresADDINEN.CITE<EndNote><Cite><Author>潘炜</Author><Year>1999</Year><RecNum>87</RecNum><DisplayText><styleface="superscript">[18]</style></DisplayText><record><rec-number>87</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617954206">87</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author><styleface="normal"font="default"charset="134"size="100%">潘炜</style></author><author><styleface="normal"font="default"charset="134"size="100%">张晓霞</style></author><author><styleface="normal"font="default"charset="134"size="100%">罗斌</style></author><author><styleface="normal"font="default"charset="134"size="100%">吕鸿昌</style></author><author><styleface="normal"font="default"charset="134"size="100%">陈建国</style></author></authors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">垂直腔面发射半导体微腔激光器</style></title><secondary-title><styleface="normal"font="default"charset="134"size="100%">物理</style></secondary-title></titles><periodical><full-title>物理</full-title></periodical><pages>210-216</pages><volume>28</volume><number>4</number><dates><year>1999</year></dates><urls></urls></record></Cite></EndNote>[18]性能指标DHMQWSL-MQWJth（A/cm2）100045096Ith（mA）2SE（mW/mA）0.2-0.250.2-0.30.82Pm（mW）180330380T0（K）55-6576-8097Linewidth（Hz）500563.6图1.3半导体的带隙宽度及对应波长同晶格常数的关系图ADDINEN.CITE<EndNote><CiteExcludeAuth="1"ExcludeYear="1"><RecNum>164</RecNum><DisplayText><styleface="superscript">[19]</style></DisplayText><record><rec-number>164</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1619938718">164</key></foreign-keys><ref-typename="WebPage">12</ref-type><contributors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">半导体带隙宽度及对应波长同晶格常数的关系</style></title></titles><dates></dates><urls><related-urls><url>https://www.tf.uni-kiel.de/matwis/amat/semi_en/kap_5/backbone/r5_1_4.html</url></related-urls></urls></record></Cite></EndNote>[19]Figure1.3SchematicofthebandgapversuswavelengthandthelatticeconstantADDINEN.CITE<EndNote><CiteExcludeAuth="1"ExcludeYear="1"><RecNum>164</RecNum><DisplayText><styleface="superscript">[19]</style></DisplayText><record><rec-number>164</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1619938718">164</key></foreign-keys><ref-typename="WebPage">12</ref-type><contributors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">半导体带隙宽度及对应波长同晶格常数的关系</style></title></titles><dates></dates><urls><related-urls><url>https://www.tf.uni-kiel.de/matwis/amat/semi_en/kap_5/backbone/r5_1_4.html</url></related-urls></urls></record></Cite></EndNote>[19]应变的引入使得传统半导体激光器有源区由最初的晶格匹配材料扩展到了应变材料。这进一步扩展了半导体激光器可实现激射的波长范围，如图1.3所示为半导体的带隙宽度及对应的波长同晶格常数的关系图ADDINEN.CITE<EndNote><CiteExcludeAuth="1"ExcludeYear="1"><RecNum>164</RecNum><DisplayText><styleface="superscript">[19]</style></DisplayText><record><rec-number>164</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1619938718">164</key></foreign-keys><ref-typename="WebPage">12</ref-type><contributors></contributors><titles><title><styleface="normal"font="default"charset="134"size="100%">半导体带隙宽度及对应波长同晶格常数的关系</style></title></titles><dates></dates><urls><related-urls><url>https://www.tf.uni-kiel.de/matwis/amat/semi_en/kap_5/backbone/r5_1_4.html</url></related-urls></urls></record></Cite></EndNote>[19]。可以看到，当选定衬底材料后，可在衬底晶格常数大小处做横轴的垂直线，凡在此线上的材料都可以在此外延衬底上实现无应变生长；即使晶格在一定范围内不匹配，通过额外引入的应变还可以起到调节激射波长的作用。在半导体激光器外延结构设计上，由于双异质结结构可以同时提供载流子限制和光场限制，并且基于此种结构首次实现了室温下连续工作的半导体激光器，所以后期几乎所有的外延结构都是对双异质结结构的扩展和延伸。如图1.4（a）为下盖层/有源区/上盖层组成的三层对称波导结构，当有源区足够薄时（但大于激射波长），虽然载流子得到很好的限制，但是光场也受到了很强的限制，极易造成腔面光学灾变（CatastrophicOpticalMirrorDamage，COD）；同时由于光波在出射介质中的衍射作用，使得激光器的垂直远场发散角较大。为了解决此问题，1973年英国STLHarlow的Thompson等人ADDINEN.CITE<EndNote><Cite><Author>Thompson</Author><Year>1973</Year><RecNum>88</RecNum><DisplayText><styleface="superscript">[20]</style></DisplayText><record><rec-number>88</rec-number><foreign-keys><keyapp="EN"db-id="te9vzerr3wwpw2e0er7v2sem9vppw59wa9ap"timestamp="1617954328">88</key></foreign-keys><ref-typename="JournalArticle">17</ref-type><contributors><authors><author>Thompson,G.</author><author>Kirkby,P.</author></authors></contributors><titles><title>(GaAl)Aslaserswithaheterostructureforopticalconfinementandadditionalheterojunctionsforextremecarrierconfinement</title><secondary-title>IEEEJournalofQuantumElectronics</secondary-title></titles><periodical><full-title>IEEEJournalofQuantumElectronics</full-title></periodical><pages>311-318</pages><volume>9</volume><number>2</number><dates><year>1973</year></dates><publ