KLA缺陷检查培训PPT课件

1、Overview,KLA Basic Operation,1,21xx Capabilities,2,3,Run Overview,4,Run one wafer,Inspection Queue,5,6,7,8,9,Stopping the Inspection,10,Defect Overview,Why monitor defects ?,To improve production yields, defects need to be monitored and statistically analyzed at each stage of wafer production.,11,De

2、fect Sort,1.False : Found nothing after review with inspection data. 2.Unkown : Defects were found but there is no suitable defect code to assign. 3.Fall on particle : Particle on surface of patten.,4.In film particle : Particle was contained in film, such as poly, HDP, metal and so on.,HDP,Poly,12,

3、5.Scratch : Especially for scratch caused by robot , other tool parts or man-made. Defect map :,Defect iamge:,Micro,Macro,13,6.Discolor : Color difference,7.Masking ：Should be etched but still remian(poly,SiN,spacer,metal and so on). Some connect more than two lines,its bridge(killer).,14,8.Ring lik

4、e defect: Such as defects caused by ARC splash, usually related to PHOTO.,Poly,Metal,9.Grape like defect:Induces by PHOTO PU.,15,10.Residue ：Always happen after wet station clean.,11.Patten abnormal : Roughness,Defocus,Patten shift and so on.,Roughness,Defocus,Patten shift,Patten Abnormal,16,12.Conc

5、ave: COP（ Crystal oriented pits ）, Oxide Loss，Pits.,13.Peeling : Pattern shift or missing（W plug is one of peeling,always appear at wafer edge.）,17,14.Blind : CT or Via have not been opened.,15.Patten damage :,Metal damage,Poly broken is patten damage too,always happen during High Imp.,18,16.W Resid

6、ue :,1). Caused by Oxide Loss; 2). Caused by CMP.,NORMAL ABNORMAL,17.Under_Pat ：Under layer pattern fail issue.,19,18. Salicide_abnormal:Salicide poor formation.,19.Grain : Including poly or metal grain.,20,20.,Slurry:,21.,PR /Polymer_remain :PR has not been stripped completely, typically contains Carbon,21,22.Arcing:,23.Line open:,22,24.Corrosion : Caused by et