半导体制程课件

1、Hierarchy of IC Chip,晶圆芯片制作概述Wafer Manufacturing Overview,晶柱 Silicon Ingot,芯片 Wafer,光罩制作/光刻,离子植入,切割、封装,电镀,(Die,晶粒),(Chip,晶芯),蚀刻,Mask Making/ Photolithography,Ion Implantation,Assembly&Testing,Electroplating,Etching,沉积,Deposition,PHOTO (黃光) Module ,Process Procedures (制程步骤): (a) PR_coating (上光 阻) 光阻见

2、白光即反应 用黄光 (b) Photo_mask & exposure (上光罩及曝光) (c) CD measurement (曝光后量测) 简称 ADI_CD (d) After Develop Inspection (曝光后检查 ) 简称 ADI,PR: Photo Resist (光 阻) (化学物品) CD: Critical Dimension (重要尺寸),Mask (光罩),特殊光线,曝光区,光 阻,光 阻,光 阻,(1) 大小或宽度是否OK ? (ADI_CD) (2) 光阻是否曝开 ? (ADI),PHOTO (黄光) Module ,光阻区 (PR),ADI_CD,ADI

3、_CD,光阻 区 (PR),ETCH (蚀刻) Module ,Process Procedures (制程步骤): (a) Dry Etching (气相蚀刻) 化学反应后成气体去除 (b) WET_PR_stripping (光阻去除, 硫酸槽) (c) CD measurement (蚀刻后量測) 简称AEI_CD (d) After Etch Inspection (蚀刻后检查) 简称 AEI,光 阻,光 阻,Etching gas (蚀刻气体),光阻去除 (WET),大小或宽度是否OK ? (AEI_CD),光阻同时会被吃掉一些,Thin-Film (薄膜) Module ,Proc

4、ess Procedures (制程步骤): (a) Thin film deposition (薄膜沉积, 单片) (b) Thickness measurement (沉积厚度量測) (c)Film types (薄膜种类): (i) 非导体: oxide (氧化物), nitride (氮化硅) (ii) 导体: metal (金属: W, Ti, TiN, Al),Si3N4 (氮化硅),SiH4 (气) + NH3 (气) Si3N4 (固) TiCl4 (气) + NH3(气) TiN (固),厚度符合 要求 ?,CMP (化学机械研磨) Module ,Process Proce

5、dures (制程步骤): (a) Chemical Mechanical Polishing (化学机械研磨) 简称 CMP (b) 单片研磨 (c) 主要目的: 表面平坦化 (d) Thickness measurement (研磨后厚度量測),Film,CMP平坦化,厚度符合 要求 ?,Diffusion (扩散) Module ,Process Procedures (制程步骤): (a) Film deposition (炉管薄膜沉积, 150片) (b) Thickness measurement (沉积厚度量測) (c)Film types (薄膜种类): (i) 非导体: ox

6、ide (氧化物), nitride (氮化硅) (ii) 导体: Doped-poly & WSi,Film,Si (固) + O2 (气) SiO2 (固) SiH4 (气) + NH3 (气) Si3N4 (固),厚度符合 要求 ?,WET (酸槽) Module ,Process Procedures (制程步骤): (a) Pre-clean for deposition (薄膜沉积前清洗) (b) Film removal by WET (薄膜去除) (c) PR strip (光阻去除),酸槽浸泡,Surface clean (表面清洗),Film deposition,Film

7、 removal,薄膜 或 扩散 制程,光阻去除 或 磷酸吃 Si3N4,Implant (离子植入) Module ,Process Procedures (制程步骤): (a) Photo Exposure (黄光曝光) (b) Ion Implantation (离子植入) 简称 IMP (c) WET_PR_stripping (光阻去除, 酸槽),Mask (光罩),特殊光线,曝光区,光 阻,光 阻,P+,P+,P+,P+,P+,P+ P+,植入区,光阻去除后 (WET), PHOTO (黄光) 制程 & 设备 ETCH (蚀刻) 制程 & 设备 Thin-Film (薄膜)-CVD

8、 制程 & 设备 Thin-Film (薄膜)-PVD 制程 & 设备 CMP (化学机械研磨) 制程 & 设备 Diffusion (扩散) 制程 & 设备 WET (酸槽) 制程 & 设备 Implant (离子植入) 制程 & 设备 Integration (制程整合) Manufacture (制造部),半导体制造工程,Brief Process Flow - Isolation,P-sub (Silicon wafer),SiN (Nitride),Pad oxide,1.1. Wafer Start 1.2. PAD Oxidation 110A (stress buffer) 1

9、.7. SiN (Nitride) Deposition 1.5KA 1.8. Diffusion Lithography : 1.8.1 P.R. coating 1.8.2 Stepper Exposure 1.8.3 Development,Photo Resistor coating,Stepper Exposure,Brief Process Flow Isolation (Cont),1.7. Trench (STI) Plasma Etching 1.7.1 SiN Etching 1.7.2 Silicon Etching 1.8. Photo Resistor remove,

10、Brief Process Flow Isolation (Cont),1.7. APCVD STI refill 1.7.1 Liner Oxide Growth 1.7.2 APCVD Oxide deposition 1.7.3 STI Furnace 1000C Densify 1.8. STI CMP (Chemical-Mechanical Polish) 1.9. SiN remove,Brief Process Flow - Well formation,P.R. Coating,Stepper Exposure,2.1 N-WELL Formation : 2.1.1 N-W

11、ELL PR coating 2.1.2 N-WELL Lithography 2.1.3 Development 2.1.4 N-WELL implant 2.1.5 PR stripping 2.2 P-WELL Formation : 2.2.1 P-WELL PR coating 2.2.2 P-WELL Lithography 2.2.3 Development 2.2.4 P-WELL implant 2.2.5 PR stripping,P.R. Coating,Stepper Exposure,N-WELL Implant 1. N-WELL- 1 2. N-WELL- 2 7

12、. P MOS - VT 8. P MOS anti-punch,P-WELL Implant 1. P-WELL- 1 2. P-WELL- 2 7. N MOS - VT 8. N MOS anti-punch,Brief Process Flow - Gate Oxide and POLY,PR coating,Gate Oxide,Stepper Exposure,Gate Oxide 2,UPOLY growth,3 Gate Oxide Formation : 3.1 Thick Gate Oxide Growth 3.2 PR coating 3.3 TG Lithography

13、 3.4 Development 3.5 RCA-A Wet etching 3.6 PR stripping 3.7 Thin Gate Oxide Growth 4. Poly Growth 4.1 undope. POLY growth 4.2 N+POLY PR coating 4.3 N+POLY Lithography 4.4 Development 4.5 N+POLY implant and PR Strip,PR Coating,N+POLY implant,Stepper Exposure,Brief Process Flow - Gate Engineering,PR c

14、oating,Stepper Exposure,N-LDD Implant,P-LDD implant,5 Poly Gate Formation : 5.1 Poly annealing 5.2 PR coating 5.3 POLY Lithography 5.4 Development 5.5 POLY Gate etching 5.6 PR stripping 5.7 Thin Oxide Growth 6. LDD (Light Dope Drain) implant 6.1 N-LDD Lithography (ellipsis) 6.2 NLDD / N-PKT implant

15、6.3 P-LDD Lithography (ellipsis) 6.4 PLDD / P-PKT implant,Brief Process Flow - Drain Engineering,P+ Implant,N+ implant,7 Spacer Formation : 7.1 PETEOS dep. 7.2 SiN dep. 7.3 Spacer dry etch 8. Source and Drain Formation: 8.1 N+ Lithography 8.2 N+ implant 8.3 PR stripping 8.4 P+ Lithography 8.5 P+ imp

16、lant 8.6 PR stripping,Brief Process Flow - ILD Passivation,9. Salicide Formation : 9.1 PETEOS-500A Cap Oxide dep. 9.2 SAB (Salicide-Block) Lithography (ellipsis) 9.3 Ti/Co sputtering 9.4 Salicidation RTP C49 annealing 9.5 TiN residual Semitool wet clean 9.6 Salicidation RTP C54 annealing 10. ILD Pas

17、sivation 10.1 SiN 300A deposition (Moisture and sodium block) 10.2 AP-USG deposition (Gap filling and B,P trap) 10.3 TEOS-BPSG-14K deposition (re-flow and planarization) 10.4 ILD CMP,PR Coating,Brief Process Flow - Contact Plug,Metal 1,DUV Stepper Exposure,11. Contact Plug Formation : 11.1 Contact L

18、ithography 11.2 Contact Plasma Etching 11.3 PR strip 11.4 Barrier layer deposition (Ti + TiN for well contact) 11.5 RTP annealing 11.6 Glue Layer deposition (Ti + TiN for plug adhesion) 11.5 WCVD filling 11.6 WCMP 11.7 Metal Liner deposition (Ti + TiN for Metal adhesion) 11.8 Metal Sputter,Brief Pro

19、cess Flow - Backend routine (Aluminum line),Cap Oxide,PR Coating,Metal 2,Stepper Exposure,Stepper Exposure,12. IMD deposition 12.1 HDP-Oxide deposition ( Gap filling) 12.2 PE-Oxide Deposition ( Planarization and uniformity) 12.3 IMD CMP 12.4 Cap PE-Oxide 13. MVIA plug formation 13.1 MVIA Lithography

20、 cycle 13.2 MVIA Etching and PR strip 13.3 Glue Layer deposition (Ti + TiN for plug adhesion) 13.4 WCVD filling 13.5 WCMP 13.6 Metal Liner deposition (Ti + TiN for Metal adhesion) 13.7 Metal Sputter,Brief Process Flow - Aluminum line,Brief Process Flow - Backend routine (Copper Dual Damascene),PR Coating,Stepper Exposure 2,Stepper Expos