光耦TLP521.pdf

ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/4/03 DB92546m-AAS/A3 0.26 20.32 19.32 4.0 3.0 0.5 7.62 13 Max 7.0 6.0 2.54 1.2 0.5 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 1 2 4 3 0.26 13 Max 2.54 3.0 10.16 9.16 4.0 3.0 3.35 0.5 7.0 6.0 7.62 2 3 4 7 6 5 1.2 13 Max 0.5 0.26 2.54 Dimensions in mm HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS ?UL recognised, File No. E91231 X SPECIFICATION APPROVALS ?VDE 0884 in 3 available lead form : - - STD - G form - SMD approved to CECC 00802 ?BSI approved - Certificate No. 8001 DESCRIPTION The TLP521, TLP521-2, TLP521-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. FEATURES ?Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. ?High Current Transfer Ratio ( 50% min) ?High Isolation Voltage (5.3kVRMS ,7.5kVPK ) ?High BVCEO ( 55Vmin ) ?All electrical parameters 100% tested ?Custom electrical selections available APPLICATIONS ?Computer terminals ?Industrial systems controllers ?Measuring instruments ?Signal transmission between systems of different potentials and impedances 3.35 5.08 4.08 18 TLP521 TLP521-2 TLP521-4 OPTION G 7.62SURFACE MOUNT OPTION SM 10.16 0.26 1 2 3 7 8 16 15 10 9 611 512 14 413 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail 10.46 9.86 0.6 0.1 1.25 0.75 TLP521GB, TLP521-2GB, TLP521-4GB, TLP521, TLP521-2, TLP521-4 TLP521XGB, TLP521-2XGB, TLP521-4XGB TLP521X, TLP521-2X, TLP521-4X DB92546m-AAS/A3 PARAMETERMIN TYPMAX UNITS TEST CONDITION InputForward Voltage (VF)1.01.151.3VIF = 10mA Reverse Current (IR)10AVR = 4V OutputCollector-emitter Breakdown (BVCEO)55VIC = 0.5mA ( Note 2 ) Emitter-collector Breakdown (BVECO) 6VIE = 100A Collector-emitter Dark Current (ICEO)100nAVCE = 20V CoupledCurrent Transfer Ratio (CTR) (Note 2) TLP521, TLP521-2, TLP521-450600%5mA IF , 5V VCE CTR selection availableBL200600% GB100600% GB30%1mA IF , 0.4V VCE Collector-emitter Saturation VoltageVCE (SAT)0.4V8mA IF , 2.4mA IC -GB0.4V1mA IF , 0.2mA IC Input to Output Isolation Voltage VISO5300VRMSSee note 1 7500VPKSee note 1 Input-output Isolation Resistance RISO 5x1010VIO = 500V (note 1) Response Time (Rise), tr4sVCE = 2V , Response Time (Fall), tf3sIC = 2mA, RL = 100 Note 1Measured with input leads shorted together and output leads shorted together. Note 2Special Selections are available on request. Please consult the factory. 7/4/03 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature-55C to + 125C Operating Temperature-30C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current50mA Reverse Voltage6V Power Dissipation70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO55V Emitter-collector Voltage BVECO 6V Power Dissipation150mW POWER DISSIPATION Total Power Dissipation200mW (derate linearly 2.67mW/C above 25C) DB92546m-AAS/A3 7/4/03 50 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) 150 0 200 Ambient temperature TA ( C ) Collector power dissipation PC (mW) 60 30 20 10 0 40 50 -30 0 25 50 75 100 125 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature -30 0 25 50 75 100 Ambient temperature TA ( C ) Collector-emitter voltage VCE ( V ) Collector-emitter saturation voltage VCE(SAT) (V) Collector-emitter Saturation Voltage vs. Ambient Temperature 100 TA = 25C 0 5 10 15 20 25 0 0.04 0.08 0.12 0.16 0.20 0.24 0.28 IF = 5mA IC = 1mA Forward current IF (mA) Collector Current vs. Low Collector-emitter Voltage 5 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 Collector current IC (mA) IF = 2mA Collector Current vs. Collector-emitter Voltage Collector-emitter voltage VCE ( V ) Collector current IC (mA) Current T