《Stepper简介》PPT课件.ppt

Stepper機台結構原理簡介及注意事項,IC3/PMA3/PHOTO黃郁斌9/2/1999,Index1,1:Photo區簡介2.FAB流程3.Stepper機台種類4.機台外觀5.操作方法6.照明光源7.對準系統8.Focus&Leveling系統9.曝光程序10.曝光參數,Index2,11.Autofeedback系統12.機台Alarm13.Stepper特殊Function(Extended,Deep)14.DUVStepper15.晶邊曝光16.日常測機17.操作注意事項,1.PHOTO簡介,STEPPER,顯影機光阻機,SEMCD,AA,CD量測,AA量測,曝光圖形,ADI,SIN,POLY,ILD,METAL,POLYCONTMETAL,SIN,POLYCONT,METAL,P+,N+P-WELL,P+,P-WELLPLDDN+,2.FAB流程,L7W01,SINP-WELLP-FIELDPOLYPLDDP+N+CONTMETAL1MVIA1METAL2MVIA2METAL3PAD,3.Stepper機台種類,DUV:0.25um以上可生產機台EX14C:E11-2,E11-3,E11-4,E12-1EX12B:E8-7I-line(5x):0.35um以上可生產機台I14:I11-1,I7-7I12:F9-4,F9-5,F9-6I11:I7-1I7-6,I8-1I8-6I-line(2.5x):簡單層機台4425i:O9-1O9-3,O-R1O-R3,6.照明光源,光源波長I-line:365nm的HgLampDUV(KrF):波長246nm的LaserDUV(ArF):波長193nm的LaserR=K*波長/NAIlluminationIDDUV:ID1-NA0.6Conv.(一般)ID4-NA0.6Annular(Poly)I-line:ID7-NA0.57Conv.(一般)ID10-NA0.5Conv.(DRAMMetal),7.對準系統-1,間接對準光罩對準:光罩=Stepper對準Baselinecheck:WaferAlignemtSensor=光罩晶片對準:Search,EGAWaferAlignmentSensorLSA:LaserStepAlignment(光繞射)FIA:FieldImageAlignment(影像處理),7.對準系統-2,8.Focus&Leveling系統-I11型,HeightdetectingByfocussensor(lightsourceWhitelight)FieldtiltdetectingBylevelingsensor(lightsourceSinglewavelength),Levelinglightsource,Focusdetector,Levelingdetector,Focuslightsource,i12,EX12:drivepointi11andprevious:fixedpoint,8.Focus&Leveling系統-I14型,2-dimensionalmulti-pointfocussensorsareused(ApplicableforbothFocusing&Leveling,LightsourceWhitelight),Lightsource,PositionDetector,Inlinemulti-pointfocussensors77,2-dimensionalmulti-pointfocussensors,Max.9pointscanbeselectedfromtotal49points(Trackingsensorsareauxiliarycombined.)*Trackingsensors:Checkwhethertheheightofthewafersurfaceiswithinthemeasurementrangeoffocussensors.,Trackingsensor1,3mm,Levelingdetectionarea19mm,18mm,3mm,18mm,Trackingsensor2,8.Focus&Leveling系統-Sensor位置,9.曝光程序,晶片傳送:Local,Inline晶片對準Notch對準Search:2ShotsEGA:610Shots晶片曝光Focus(偵測值+Offset)Leveling(偵測值+Offset)曝光(曝光時間*光源強度Integrator),10.曝光參數-1,曝光時間:DUV(mj)I-line(ms)FocusoffsetLevelingoffsetAA補值Offset:X,YScaling:X,YOrthogonalityWaferrotationShotscaling(Mag)Shotrotation(Reticlerotation,RR),10.曝光參數-2,11.AutoFeedback系統,Stepper=SEMCD=KLAAACDAutoFeedback例:PolyCD過大(能量太弱),調整PPMS加大曝光參數AAAutoFeedback例:PolyAAOffsetX偏0.2,調整PPMSX偏-0.1好處阻止連批異常曝光條件最佳化,12.機台Alarm,不易對準Search:OFRetry,Preset,ResetSystemparameterEGA:重做Search,Mark破損,訊號不佳IntershotFlatnessAlarmLevelingRetryerror(I7-6),13.Stepper特殊Function,ExtendedExposure:指定Shot特殊曝光條件Deep:針對Pvia,Cont,Mvia照明ID:Metal,14.DUVStepper,15.晶邊曝光,Exposureshot,Shiftfocusingshot,Waferedge,Non-focusarea,晶邊曝法1.Shift2.Norm3.Off,16.日常測機,Focus:每天早班,晚班各一次FC2:I-lineSMP:DUV,I8-6平坦度:每天早班1次Baseline:每天1次LSAFIALeveling(DUV),17.操作注意事項,名詞解釋:1.AA:AlignAccuracy,對準準確度.2.ADI:AfterDevelopInspection,顯影後目檢.3.CD:CriticalDimension,重要的線寬.4.Coater:光阻機,將光阻以旋轉的方式均勻的塗佈在晶片上.5.Defocus:曝光時焦距異常,將導致晶片上的光阻圖形變形.6.Developer:顯影機,利用顯影液將曝光後的光阻去除.7.DUV:波長246nm的光源8.Exposure:曝光,使光阻感光的過程.9.I-line:波長365nm的光源10.Mask(Reticle):光罩,內有欲移轉至晶片的圖形.11.PR:PhotoResist,光阻,為一種感光材料經曝光後可溶解於顯影液中而去