SMT-07_Metrology_CD

,SemiconductorManufacturingTechnologyMichaelQuirk&JulianSerdaOctober2001byPrenticeHallChapter7MetrologyandDefectInspection,Objectives,Afterstudyingthematerialinthischapter,youwillbeableto:1.ExplainwhyICmetrologyisperformed,anddiscussthedifferentcategoriesofwafermeasurementequipmentanddatacollectionmethodsused.2.Statetwelvedifferentqualitymeasuresandidentifythefabricationprocesseswhereeachisused.3.Discussthevariousmetrologymethodsandequipmentassociatedwiththedifferentqualitymeasures.4.ListanddiscussthepurposeofsevendifferenttypesofanalyticalequipmentusedtosupportICfabrication.,ICMetrology,MeasurementEquipmentYieldDataManagement,UnpatternedSurfaceInspectionSystem,PhotographcourtesyofKLA-Tencor,Photo7.1,MonitorWaferVersusPatternedWafer,Figure7.1,MeasurementToolClassification,Table7.1,QualityMeasuresinWaferFabrication,Table7.2,FilmThickness,ResistivityandSheetResistanceFour-PointProbeSheetResistance(OpaqueFilms)VanderPauwContourMapsEllipsometry(TransparentFilms)ReflectionSpectroscopyX-rayFilmThicknessPhotoacousticTechnology,IllustrationofSquareThinFilm,Figure7.2,FourPointProbe,Figure7.3,VanderPauwSheetResistivity,Figure7.4,SheetResistanceContourMap,Figure7.5,BasicPrincipleofEllipsometry,Figure7.6,LightReflectionfromaThinLayer,Figure7.7,FilmThicknessMeasuredwithX-RayFluorescence(XRF),Figure7.8,PhotoacousticFilmThicknessMeasurement,UsedwithpermissionfromSolidStateTechnology,June1997,p.86,Figure7.9,DetailedStressMapofWafer,Figure7.10,IndexofRefraction,Figure7.11,PNJunctions(DopantConcentration),Figure7.12,ThermalWaveSystemforMeasuringDopantConcentration,Figure7.13,SpreadingResistanceProbe(SRP),Figure7.14,SurfaceDefects,UnpatternedSurfaceDefectsOpticalMicroscopyOpticalSystemLightScatteringDefectDetectionParticlesPerWaferPerPassPatternedSurfaceDefectsLightScatteringonPatternedWafers,DarkfieldandBrightfieldDetection,Figure7.15,WaferInspectionSystem,PhotographcourtesyofInspexCorp.,Photo7.2,SchematicofOpticalSystem,Figure7.16,PrincipleofConfocalMicroscopy,Figure7.17,ParticleDetectionbyLightScattering,Figure7.18,ParticleMap,Figure7.19,OtherEssentialMetrologyTools,CriticalDimension(CD)ScanningElectronMicroscope(SEM)CDSEMStepCoverageOverlayRegistrationCapacitance-Voltage(C-V)TestContactAngle,SimpleSchematicofCD-SEM,Figure7.20,CDSEM,PhotographcourtesyofKLA-Tencor,Photo7.3,StepCoverage,Figure7.21,SurfaceProfiler,Figure7.22,OverlayRegistrationInspectionPatterns,Figure7.23,MOSModelofTwoCapacitorsatGateRegion,Figure7.24,C-VTestSetupandPlotting,Figure7.25,CapacitanceVersusVoltageforn-TypeSilicon(FirstStepofC-VTest),Figure7.26,IonicChargeCollectioninC-VTest,Figure7.27,VoltageShiftinn-TypeSilicon,Figure7.28,ContactAngle,Figure7.29,AnalyticalEquipment,Secondaryionmassspectrometry(SIMS)Atomicforcemicroscope(AFM)Augerelectronspectroscope(AES)X-rayphotoelectronspectroscopy(XPS)Transmissionelectronmicroscope(TEM)Wavelengthandenergydispersivespectrometer(WDXandEDX)Focusedionbeam(FIB),RelativeImportanceofAnalyticalEquipment,Figure7.30,IonBeamSputteringofSurfaceMaterial(Secondary-ionMassSpectroscopy,SIMS),Figure7.31,IonProductioninaDuoplasmatron,Figure7.32,TOF-SIMSMassSpectrometerPrinciple,Figure7.33,SchematicofAtomicForceMicroscope,Figure7.34,AugerElectronSpectroscopy(AES),AESmeasurestheenergyofaugerelectronsemittedbythesurfaceofasamplewhenstruckbyahighly-focusednarrowelectronbeam.Itisverysensitivetothesurface,withadepthofonly10to50.Theenergyassociatedwithaugerelectronsprovideadistinctlinkbacktotheparentatomthatisusedforidentificationofthesampleelements.,SchematicofX-RayPhotoelectronSpectroscopy(XPS)Measurement,Figure7.35,SchematicofTransmissionElectronMicroscope(TEM),Figure7.36,SampleTEMApplicationsinSemiconductorManufacturi