Power MOSFET.ppt

powermosfettechnology,producttechnologydivisionmoselvitelicinc.,tableofcontents,powerproductoverviewpowerproductmarketandapplicationpowermosfettechnologymoselfoundryservicesummary,powerproductoverview,“semiconductorcategory“,semiconductor,optoelectrons,discrete(7%),ic(84%),sensors(3%),digitalic(85%),analogic(15%),(memory,logic,micro-),powerproduct,“powerproductcategory“,discrete,analogic,diodes,transistor,thyristor,rectifier,.powermosfet.bipolar.igbt,slai(40%)(standardlinearanalogic),asai(60%)(applicationspecificanalogic),.amplifier.voltageregulator.dataconversion.interface,.telecom.automotive.consumer.computer,(50%),“powermanagementproductcategory“,powermanagement,powermosfet(powersupply2.2nm1kvmagnification:25xto650,000xacc.voltage:0.5kvto30kv(in0.1kvstep)samplesize:40mm(diameter)x30mm(height)movementrange:x/y/z=70mm/50mm/1.525mmtilt:-5o60o/rotation:0o360o,sem/edsanalysis,lead-freeprojecttoanalyzesn/ag/cu/pbsecondaryelectronimage,100%,8970.54,totals,0.14,22.15,pb,m,97.96,8823.43,sn,l,0.99,80.67,agl,0.92,44.29,cul,atomic%,weight%,element,100%,8970.54,totals,0.14,22.15,pb,m,97.96,8823.43,sn,l,0.99,80.67,agl,0.92,44.29,cul,atomic%,weight%,element,sample#pb,vgmicrolab350,fe-aes,resolution:image:12nm25kvenergy:0.022.0%magnification:200xto500,000xacc.voltage:0.5kvto25kvsamplesize:38mm(diameter)x8mm(height)movementrange:x/y/z=9mm/6mm/+5-15mmtilt:-20o90o/rotation:0o360o,surface-sensitivespectroscopictechniqueusedforelementalanalysishighsensitivityforallelementsexcepthandhemonitoringmethodforsurfacecleanlinessofsamplequantitativecompositionalanalysisofsamplesurfaceregion,istfe-aesanalysis,padsize:45um2,incidentbeamenergy:10kev.ionbeamenergy:1kev/1ua.etchingrate:0.1nm/sec.energyresolution:crr=10(0.1ev).,joeljem-2100f,microstructure:latticeimagephase:amorphous/poly/singlecrystal,stoichiometrycrystallinedefect:substratedefect,inducedbyimplantation/process,resolution:latticeimage0.1nm,pointimage0.19nmmagnification:50xto1,500,000xacc.voltage:80kvto200kvcameralength80-2000mmsamplesize:3mmindiametermovementrange:x/y/z=2mm/2mm/0.1mmtilt:25o,tem,temanalysis,(a)teminspectionincudual-damasceneprocess(b)highresolutiontemformeasurementofnano-meterlevel(c)gatelength(90nm)measurementandstructureobservation(d)sisubstratedislocationobservationbyplan-viewtem,(a),(b),(c),(d),m2-al,m3-cu,m4-cu,m2-al,tem/edsanalysis,m1-al,m1-al,m3cufastdiffusiontom2wasfound,asshowninedx/mappingfigure,edx/mappig,protocolrecentlydevelopedforshallowarsenicimplantshighdepthresolutionrepeatprofileswith2%standarddeviationhighprecisionallowsimplantercomparisons,highprecisionimplantcharacterization,sims,simscrater,reverseengineeringofled(iii-v),ledstructureanalysis,precisioncut:specificlocation,particle,via/contactx-imagessamplepreparation:tem,sem,specialrequestmicrosurgery:circuitrepair,artificialpad,dielectricbuffer,accelerationvoltage:30kvsecondaryelectronresolution:5nmmaximumprobecurrentdensity:20a/cm2maximumprobecurrent:20naobservationfield0.5x0.5um22.4x2.4mm2scanrotation:0359.9o/0.1ostepsamplesize:50mmsquare,thickness12mm,fib,siismi2050,cfilm,cu,ni,au,fibanalysis,fibprecisioncutforobservationinspecificstructure,fibanalysis,temsamplepreparationbyfiblift-offmethod,holesizeisabout100nmplugwidthisabout350nm,txmanalysis(transmissionx-raymicroscopy),non-destructiveexamination,casestudy,thankyou,成份分析微區分析aes,eels/tem,eds/tem,eds/sem表面分析aes,sims,xps薄膜分析rbs,eds/tem,eds/sem化學態分析xps,aes,ftir,eels/tem結構觀察表面形貌om,sem微區結構tem,sem,fib晶格結構tem雜質分析掺雜元素s