单粒子效应.ppt

单粒子效应 SingleEventEffect Contents RadiationEnvironment SemiconductorDevices Cosmicrays Nuclearexplosions Nuclearpowerplant Atmosphericradiation Radiationeffectsonsemiconductor Classification 非破坏性单粒子效应 SoftError 单粒子翻转 SEU SingleEventUpsets 单粒子瞬变效应 SET SingleEventTransient 灾难性单粒子效应 HardFailure 单粒子锁定 SEL SingleEventLatchup 单粒子烧毁 SEB SingleEventBurnout 单粒子门断裂 SEGR SingleEventGateRupture SourcesofSingleEventEffects Spaceapplications High energyheavyions LongrangeinSi largeLET directinteraction High energyprotons trapped solar cosmic Direct IndirectinteractionthroughnuclearreactionsTerrestrialandavionicapplications Highenergyneutrons cosmicraybyproducts Indirectinteractionthroughnuclearreactions Lowenergyneutrons thermal Indirectinteractionvia10Bnuclearreaction Alphaparticlesfromradioactivedecayofcontaminants fromU Thdecaychains inthechip package solder ShortrangeinSi smallLET directinteraction WhydowestudySEE 1975年美国发现通信卫星的数字电路JK触发器由于单个重核粒子的作用被触发 陆续发现陶瓷管壳所含的微量放射性同位素铀和钍放出的 粒子以及宇宙射线中的高能中子 质子 电子等 都能使集成电路产生单粒子效应 进一步的模拟试验和在轨卫星的测试证实 几乎所有的集成电路都能产生这种效应 1971 1986 WhydowestudySEE Moore slawis self validatedbyreducingthedevicedimensionovertheyears byscalingdowntheminimumfeaturesizeoftheCMOStechnologynode WhatisSEE SingleEventEffect SEE perturbationofthebehaviorofelectronic optoelectronic devices circuitsand orsystemsproducedbyasingleionizingparticle ChargegenerationDirectionizing Heavyion Indirectionizing Proton ChargecollectionPromptcomponentDrift funneling highfieldregions DelayedcomponentDiffusion lowfieldregions Chargegeneration Anionizingparticlegeneratesa dense trackofelectron holepairsinsemiconductors Silicon anddielectrics SiO2 ThenumberofgeneratedcarriersisproportionaltotheparticleLinearEnergyTransfer LET coefficient MeVcm2 mg i e theionizingenergyloss unitpathlength Energy e hpair 3 6eVinSi 17eVinSiO2 Chargegenerationandcollection Underanexternalelectricfieldthetwocolumnsofcarriersrecombineanddrift manyelectronsandholessurviveinSi fewerinSiO2 Eventually anetnegative positivechargecanbecollectedatsensitivenodes ifthischargeexceedsathresholdvalue criticalcharge aneventmaybeobservedaffectingthecircuit Chargecollectioninareversebiasedp njunction Chargefunnelingmodel Timeevolutionofchargecollection SingleEventUpset SEU inSRAM HowtostudySEE SEEtestsareperformedtoevaluatetheexpectederror failurerateofthedevice systeminthespecificoperatingenvironment Space HEP Avionic Sealevel byusing Ionbeamsfromaccelerators Neutronbeams Alphasources Lasers Alargenumberofdevicesoperatingunderlowintensityradiation unacceleratedtests theRosettaexperiment TheSEEsensitivityofeachSEEtype SEU SEL SEB inanyparticulardeviceisevaluatedbymeasuringthecorrespondingcrosssectionvsLET Crosssection LET Events particlefluence cm2 Theerrorratesinoperatingconditionisderivedfromcrosssectionsandthefeatures natureofparticles correspondingfluxes missionduration oftheactualenvironment Errorrate errors deviceday acceleratedtests SEEcrosssectionandthresholdLET LETthistheminimum threshold LETtocausethespecificSEE Thesaturationcrosssection satisapproachedathighLETvalues The LET curveisobtainedbymeasuringthecrosssectionatafewLETvaluesandfittingdatawithaWeibullcurve BasicprincipleofSEEtest Schoolbook Example Standards Accelerators Nuclearreactor 反应堆 Hardening SingleEventEffectsindevices circuitscanbemitigatedbyusingdifferentstrategiesatdifferentlevels Forinstance Circuitlevel byusingspecifictechnologiesorprocessesforfabrication suchasepi CMOS SOI additionalcapacitorsinSRAM orrad hardenedelectroniccomponents Designlevel byusingadhoclogicstructuresaimingtoSEEimmunity suchasSEEimmunelatches Systemlevel