晶圆制造PPT课件.ppt

2020 1 8 1 Chapter4WaferManufacturingandEpitaxyGrowing www2 austin cc tx us HongXiao Book htm 2020 1 8 2 CrystalStructures AmorphousNorepeatedstructureatallPolycrystallineSomerepeatedstructuresSinglecrystalOnerepeatedstructure www2 austin cc tx us HongXiao Book htm 2020 1 8 3 AmorphousStructure www2 austin cc tx us HongXiao Book htm 2020 1 8 4 PolycrystallineStructure Grain GrainBoundary www2 austin cc tx us HongXiao Book htm 2020 1 8 5 SingleCrystalStructure www2 austin cc tx us HongXiao Book htm 2020 1 8 6 WhySilicon Abundant cheapSilicondioxideisverystable strongdielectric anditiseasytogrowinthermalprocess Largebandgap wideoperationtemperaturerange www2 austin cc tx us HongXiao Book htm 2020 1 8 7 Source http www shef ac uk chemistry web elements nofr key Si html www2 austin cc tx us HongXiao Book htm 2020 1 8 8 UnitCellofSingleCrystalSilicon www2 austin cc tx us HongXiao Book htm 2020 1 8 9 CrystalOrientations x y z plane www2 austin cc tx us HongXiao Book htm 2020 1 8 10 CrystalOrientations x y z plane plane www2 austin cc tx us HongXiao Book htm 2020 1 8 11 CrystalOrientations x y z plane www2 austin cc tx us HongXiao Book htm 2020 1 8 12 OrientationPlane Atom Basiclatticecell www2 austin cc tx us HongXiao Book htm 2020 1 8 13 OrientationPlane Siliconatom Basiclatticecell www2 austin cc tx us HongXiao Book htm 2020 1 8 14 IllustrationofthePointDefects SiliconAtom Impurityonsubstitutionalsite FrenkelDefect Vacancy 空位 orSchottkyDefect ImpurityinInterstitialSite SiliconInterstitial間隙 www2 austin cc tx us HongXiao Book htm 2020 1 8 15 DislocationDefects www2 austin cc tx us HongXiao Book htm 2020 1 8 16 FromSandtoWafer Quartzsand silicondioxideSandtometallicgradesilicon MGS ReactMGSpowderwithHCltoformTCSPurifyTCSbyvaporizationandcondensationReactTCStoH2toformpolysilicon EGS MeltEGSandpullsinglecrystalingot www2 austin cc tx us HongXiao Book htm 2020 1 8 17 FromSandtoWafer cont Cutend polishside andmakenotchorflatSawingotintowafersEdgerounding lap wetetch andCMPLaserscribeEpitaxydeposition www2 austin cc tx us HongXiao Book htm 2020 1 8 18 晶圓形成之步驟FromSandtoSilicon MGS poly silicon with98 purity 1 首先由石英砂提煉成冶金級多晶矽 www2 austin cc tx us HongXiao Book htm 2020 1 8 19 SiliconPurificationI Si HCl TCS vapor SiliconPowder Hydrochloride Filters Condenser Purifier PureTCS liquid with99 9999999 Reactor 300 C www2 austin cc tx us HongXiao Book htm 2020 1 8 20 PolysiliconDeposition EGS EGS Electronic gradeSilicon isalsopoly silicon www2 austin cc tx us HongXiao Book htm 2020 1 8 21 SiliconPurificationII LiquidTCS H2 Carriergasbubbles H2andTCS ProcessChamber TCS H2 EGS HCl EGS www2 austin cc tx us HongXiao Book htm 2020 1 8 22 ElectronicGradeSilicon Source www2 austin cc tx us HongXiao Book htm 2020 1 8 23 CrystalPulling Makeasingle crystalsiliconingotCzochralski CZ methodFloatingZone FZ method www2 austin cc tx us HongXiao Book htm 2020 1 8 24 CrystalPulling CZmethod GraphiteCrucible SingleCrystalsiliconIngot SingleCrystalSiliconSeed QuartzCrucible HeatingCoils 1415 C MoltenSilicon www2 austin cc tx us HongXiao Book htm 2020 1 8 25 CZCrystalPullers MitsubishMaterialsSiliconSource www2 austin cc tx us HongXiao Book htm 2020 1 8 26 CZCrystalPulling Source www2 austin cc tx us HongXiao Book htm 2020 1 8 27 FloatingZoneMethod HeatingCoils PolySiRod SingleCrystalSilicon SeedCrystal HeatingCoilsMovement MoltenSilicon www2 austin cc tx us HongXiao Book htm 2020 1 8 28 ComparisonoftheTwoMethods CZmethodismorepopularCheaperLargerwafersize 300mminproduction ReusablematerialsFloatingZonePuresiliconcrystal nocrucible Moreexpensive smallerwafersize 150mm Mainlyforpowerdevices www2 austin cc tx us HongXiao Book htm 2020 1 8 29 IngotPolishing Flat orNotch Flat 150mmandsmaller Notch 200mmandlarger www2 austin cc tx us HongXiao Book htm 2020 1 8 30 WaferSawing OrientationNotch CrystalIngot SawBlade DiamondCoating Coolant IngotMovement www2 austin cc tx us HongXiao Book htm 2020 1 8 31 2020 1 8 32 ParametersofSiliconWafer www2 austin cc tx us HongXiao Book htm 2020 1 8 33 WaferEdgeRounding 邊緣圓滑化 Wafer Wafermovement WaferBeforeEdgeRounding WaferAfterEdgeRounding www2 austin cc tx us HongXiao Book htm 2020 1 8 34 WaferLapping 粗磨拋光 Roughpolishedconventional abrasive slurry lappingToremovemajorityofsurfacedamageTocreateaflatsurface www2 austin cc tx us HongXiao Book htm 2020 1 8 35 WetEtch Removedefectsfromwafersurface4 1 3mixtureofHNO3 79wt inH2O HF 49wt inH2O andpureCH3COOH Chemicalreaction 3Si 4HNO3 18HF 3H2SiF6 4NO 8H2O www2 austin cc tx us HongXiao Book htm 2020 1 8 36 ChemicalMechanicalPolishing CMP Slurry PolishingPad Pressure WaferHolder Wafer www2 austin cc tx us HongXiao Book htm 2020 1 8 37 200mmWaferThicknessandSurfaceRoughnessChanges 76mm 914mm AfterWaferSawing AfterEdgeRounding 76mm 914mm 12 5mm 814mm 2 5mm 750mm 725mm VirtuallyDefectFree AfterLapping AfterEtch AfterCMP www2 austin cc tx us HongXiao Book htm 2020 1 8 38 EpitaxyGrow 磊晶成長 DefinitionPurposesEpitaxyReactorsEpitaxyProcess www2 austin cc tx us HongXiao Book htm 2020 1 8 39 Epitaxy Definition Greekoriginepi upontaxy orderly arrangedEpitaxiallayerisasinglecrystallayeronasinglecrystalsubstrate www2 austin cc tx us HongXiao Book htm 2020 1 8 40 Epitaxy Purpose BarrierlayerforbipolartransistorReducecollectorresistancewhilekeephighbreakdownvoltage Onlyavailablewithepitaxylayer ImprovedeviceperformanceforCMOSandDRAMbecausemuchloweroxygen carbonconcentrationthanthewafercrystal www2 austin cc tx us HongXiao Book htm 2020 1 8 41 EpitaxyApplication BipolarTransistor n Epi p n n P substrate Electronflow n BuriedLayer p p SiO2 Al Cu Si Base Collector Emitter www2 austin cc tx us HongXiao Book htm 2020 1 8 42 EpitaxyApplication CMOS P Wafer N Well P Well STI n n USG p p Metal1 Al Cu BPSG W P typeEpitaxySilicon www2 austin cc tx us HongXiao Book htm 2020 1 8 43 SingleCrystalSiliconEpitaxialLayer UseChemicalVaporDeposition CVD ChoosegasphaseepitaxyCanbedopedusingdopantgassource www2 austin cc tx us HongXiao Book htm 2020 1 8 44 SiliconSourceGases SilaneSiH4DichlorosilaneDCSSiH2Cl2TrichlorosilaneTCSSiHCl3TetrachlorosilaneSiCl4 www2 austin cc tx us HongXiao Book htm 2020 1 8 45 DopantSourceGases DiboraneB2H6PhosphinePH3ArsineAsH3 www2 austin cc tx us HongXiao Book htm 2020 1 8 46 DCSEpitaxyGrow ArsenicDoping Heat 1100 C SiH2Cl2 Si 2HCl DCSEpiHydrochloride www2 austin cc tx us HongXiao Book htm 2020 1 8 47 SchematicofDCSEpiGrowandArsenicDopingProcess SiH2Cl2 Si AsH3 As AsH3 H HCl H2 www2 austin cc tx us HongXiao Book htm 2020 1 8 48 EpitaxialSiliconGrowthRateTrends GrowthRate micron min 1000 T K Temperature C 0 7 0 8 0 9 1 0 1 1 0 01 0 02 0 05 0 1 0 2 0 5 1 0 1300 1200 1100 1000 900 800 700 SiH4 SiH2Cl2 SiHCl3 Surfacereactionlimited Masstransportlimited www2 austin cc tx us HongXiao Book htm 2020 1 8 49 BarrelReactor RadiationHeatingCoils Wafers www2 austin cc tx us HongXiao Book htm 2020 1 8 50 VerticalReactor HeatingCoils Wafers Reactants Reactantsandbyproducts www2 austin cc tx us HongXiao Book htm 2020 1 8 51 HorizontalReactor HeatingCoils Wafers Reactants Reactantsandbyproducts www2 austin cc tx us HongXiao Book htm 2020 1 8 52 EpitaxyProcess BatchSystem Hydrogenpurge temperaturerampupHClcleanEpitaxiallayergrowHydrogenpurge temperaturecooldownNitrogenpurgeOpenChamber waferunloading reloading www2 austin cc tx us HongXiao Book htm 2020 1 8 53 SingleWaferReactor HydrogenambientCapableformultiplechambersonamainframeLargewafersize to300mm Betteruniformitycontrol www2 austin cc tx us HongXiao Book htm 2020 1 8 54 SingleWaferReactor HeatingLamps HeatRadiation Wafer QuartzWindow Reactants Reactants byproducts QuartzLiftFingers Susceptor www2 austin cc tx us HongXiao Book htm 2020 1 8 55 EpitaxyProcess SingleWaferSystem Hydrogenpurge clean temperaturerampupEpitaxiallayergrowHydrogenpurge heatingpoweroffWaferunloading reloadingIn situHClclean www2 austin cc tx us HongXiao Book htm 2020 1 8 56 WhyHydrogenPurge MostsystemsusenitrogenaspurgegasNitrogenisaverystableabundantAt 1000 C N2canreactwithsiliconSiNonwafersurfaceaffectsepidepositionH2isusedforepitaxychamberpurgeCleanwafersurfacebyhydridesformation www2 austin cc tx us HongXiao Book htm 2020 1 8 57 Proper