高压IGBT模块 (HVIGBT).doc

高压IGBT模块 (HVIGBT) 性能特点H系列：采用平板型IGBT硅片，其可靠性已得到业界公认N系列：采用 CSTBTTM硅片，进一步降低损耗，缩小体积N系列B型：采用 CSTBTTM硅片，封装与H系列兼容续流二极管：软恢复特性，保证良好的EMI性能基板：有Cu和AlSiC两种额定电压：从1700V到6500V额定电流：从200A到2400A绝缘电压：从4.0kVrms到10.2kVrms 应用领域牵引和大功率变频传动电力传输DC斩波器装置 HVIGBT Modules VCES(V)产品代数(基板材料)电路拓扑Ic(A)2004006008009001000120015001600180024001700G1(Cu)1单元CM800HA-34H(60KB)CM1200HA-34H(48KB)2单元CM600DY-34H(49KB)斩波单元CM600E2Y-34H(49KB)G3(AlSiC)1单元CM1200HC-34H(63KB)CM1600HC-34H(63KB)CM1800HC-34H(65KB)CM2400HC-34H(65KB)2单元CM800DZ-34H(61KB)G4(Cu)2单元CM800DZB-34N(91KB)CM1200DB-34N(59KB)G4(AlSiC)1单元CM1200HCB-34N(94KB)CM1800HC-34N(57KB)CM2400HC-34N(58KB)CM1800HCB-34N(92KB)CM2400HCB-34N(95KB)2单元CM1200DC-34N(59KB)斩波单元CM1200E4C-34N(58KB)2500G1(Cu)1单元CM800HA-50HCM1200HA-50H(45KB)2单元CM400DY-50H(47KB)G2(Cu)1单元CM800HB-50H(47KB)CM1200HB-50H(51KB)G3(AlSiC)1单元CM1200HC-50H(68KB)3300G1(Cu)1单元CM800HA-66H(43KB)CM1200HA-66H(45KB)2单元CM400DY-66H(45KB)斩波单元CM800E2Z-66H(51KB)G2(Cu)1单元CM800HB-66H(47KB)CM1200HB-66H(51KB)G3(AlSiC)1单元CM800HC-66H(65KB)CM1200HC-66H(68KB)斩波单元CM800E2C-66H(51KB)CM800E4C-66HCM800E6C-66H(67KB)G4(AlSiC)1单元CM400HG-66H(60KB)CM800HG-66HCM1000E4C-66R(110KB)CM1200HG-66H(65KB)CM1500HC-66R(111KB)4500G2(Cu)1单元CM400HB-90H(58KB)CM600HB-90H(60KB)CM900HB-90H(64KB)G3(AlSiC)1单元CM900HC-90H(86KB)G4(AlSiC)1单元CM600HG-90HCM900HG-90H6500G4(AlSiC)1单元CM200HG-130H