鼎日DTE2311规格书.pdf

1 FEATURES Halogen free PRODUCT SUMMARY VDS V RDS on ID A 20 0 045 at VGS 4 5 V 4 2 0 072 at VGS 2 5 V 3 6 S G D P Channel MOSFET Notes a Surface Mounted on 1 x 1 FR4 board ABSOLUTE MAXIMUM RATINGS TA 25 C unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain Source Voltage VDS 20 V Gate Source Voltage VGS 12 Continuous Drain Current TJ 150 C a TA 25 C ID 4 2 4 0 A TA 70 C 3 9 3 2 Pulsed Drain Current 10 s Pulse Width IDM 20 Continuous Source Current Diode Conduction a IS 1 35 0 95 Maximum Power Dissipationa TA 25 C PD 1 51 05 W TA 70 C1 00 67 Operating Junction and Storage Temperature Range TJ Tstg 55 to 150 C THERMAL RESISTANCE RATINGS ParameterSymbol TypicalMaximumUnit Maximum Junction to Ambienta t 10 s RthJA 6583 C WSteady State100120 Maximum Junction to Foot Drain Steady StateRthJF4352 RoHS COMPLIANT 1 TO 226AA TO 92 Top View S D G2 3 P Channel 20 V D S MOSFET DTE2311 2 Notes a Pulse test pulse width 300 s duty cycle 2 b Guaranteed by design not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied Exposure to absolute maximum rating conditions for extended periods may affect device reliability TYPICAL CHARACTERISTICS 25 C unless otherwise noted SPECIFICATIONS TJ 25 C unless otherwise noted ParameterSymbol Test Conditions Min Typ Max Unit Static Gate Threshold VoltageVGS th VDS VGS ID 250 A 0 6 1 5V Gate Body LeakageIGSSVDS 0 V VGS 8 V 100 nA Zero Gate Voltage Drain CurrentIDSS VDS 12 V VGS 0 V 1 A VDS 12 V VGS 0 V TJ 70 C 25 On State Drain Currenta ID on VDS 5 V VGS 4 5 V 20A Drain Source On State Resistancea RDS on VGS 4 5 V ID 4 2 A 0 0320 045 VGS 2 5 V ID 3 6 A 0 0530 072 Forward Transconductancea gfsVDS 5 V ID 4 2 A 14S Diode Forward Voltagea VSDIS 1 35 A VGS 0 V 0 77 1 1V Dynamicb Total Gate ChargeQg VDS 6 V VGS 4 5 V ID 4 2 A 1015 nCGate Source ChargeQgs 1 8 Gate Drain ChargeQgd 3 Gate ResistanceRgf 1 MHz7 7 Turn On Delay Timetd on VDD 6 V RL 6 ID 1 A VGEN 4 5 V Rg 6 4570 ns Rise Timetr6090 Turn Off Delay Timetd off 70110 Fall Timetf3555 Source Drain Reverse Recovery TimetrrIF 1 35 A di dt 100 A s65 Output Characteristics 0 4 8 12 16 20 012345 VGS 4 5 thru 3 V VDS Drain to Source Voltage V Drain Current A ID 2 5 V 2 V Transfer Characteristics 0 4 8 12 16 20 0 00 51 01 52 02 53 0 TC 125 C 55 C 25 C VGS Gate to Source Voltage V Drain Current A ID DTE2311 3 TYPICAL CHARACTERISTICS 25 C unless otherwise noted On Resistance vs Drain Current Gate Charge Source Drain Diode Forward Voltage RDS on 0 00 0 02 0 04 0 06 0 08 0 10 048121620 ID Drain Current A VGS 4 5 V VGS 2 5 V 0 1 2 3 4 5 6 03691215 VDS 6 V ID 4 8 A Gate to Source Voltage V Qg Total Gate Charge nC VGS 0 00 20 40 60 81 01 2 TJ 25 C 10 0 1 VSD Source to Drain Voltage V Source Current A IS TJ 150 C 1 Capacitance On Resistance vs Junction Temperature On Resistance vs Gate to Source Voltage 0 300 600 900 1200 1500 024681012 VDS Drain to Source Voltage V Crss C Capacitance pF Coss Ciss 0 6 0 8 1 0 1 2 1 4 1 6 50 250255075100125150 VGS 4 5 V ID 4 8 A TJ Junction Temperature C RDS on On Resistance Normalized 0 00 0 03 0 06 0 09 0 12 0 15 0123456 ID 4 8 A On Resistance RDS on VGS Gate to Source Voltage V DTE2311 4 TYPICAL CHARACTERISTICS 25 C unless otherwise noted Threshold Voltage 0 2 0 1 0 0 0 1 0 2 0 3 0 4 50 250255075100125150 ID 250 A Variance V VGS th TJ Temperature C Single Pulse Power Junction to Ambient 0 30 50 10 20 Power W Time s 40 10110 210 310 1 Safe Operating Area Junction to Case 100 1 0 1110100 0 01 10 Drain Current A ID 0 1 Limited by R DS on TC 25 C Single Pulse 10 ms 100 ms 1 s 10 s DC 1 ms VDS Drain to Source Voltage V VGS minimum VGS at which RDS on is specified Normalized Thermal Transient Impedance Junction to Ambient 10 310 211060010 110 4100 2 1 0 1 0 01 0 2 0 1 0 05 0 02 Single Pulse Duty Cycle 0 5 Square Wave Pulse Duration s Normalized Effective Transient Thermal Impedance 1 Duty Cycle D 2 Per Unit Base RthJA 100 C W 3 TJM TA PDMZthJA t t1 t2 t1 t2 Notes 4 Surface Mounted PDM DTE2311 5 TYPICAL CHARACTERISTICS 25 C unless otherwise noted Normalized Thermal Transient Impedance Junction to Foot 10 310 211010 110 4 2 1 0 1 0 01 0 2 0 1 0 05 0 02 Single Pulse Duty Cycle 0 5 Square Wave Pulse Duration s Normalized Effective Transie