浅析纳米制造所面对的困难和挑战.doc

/ / / /浅析纳米制造所面对的困难和挑战Nano fabrication is analysed facing difficulties and challenges 纳米科学和技术所触及的是具有尺寸在1-100纳米范围的构造的制备和表征。在这个范畴的研讨举世注目。无论是从根底研讨（探究基于非经典效应的新物理现象）的观念动身，还是从应用（受因构造减少空间维度而带来的优点以及因应半导体器件特征尺寸持续减小而需求这两个方面的要素差遣）的角度来看，纳米构造都是令人极端感兴味的。Nano science and technology is with size has been reached in the construction of the 1-100 nm range of preparation and characterization. Addressed in this category of the world. From bedrock for discussion (explore new physical phenomena) based on the classic effect of the concept of set off, or from the application (from the advantages of structure to reduce spatial dimensions, and according to characteristics of semiconductor devices continues to decrease in size and demand of these two aspects factor sent) perspective, the nano structure is an extreme sense of fun. 为了充沛发挥量子点的优势之处，我们必需可以控制量子点的位置、大小、成份已及密度。其中一个可行的办法是将量子点生长在曾经预刻有图形的衬底上。由于量子点的横向尺寸要处在10-20纳米范围（或者更小才干防止高激起态子能级效应，如关于GaN资料量子点的横向尺寸要小于8纳米）才干完成室温工作的光电子器件，在衬底上刻蚀如此小的图形是一项应战性的技术难题。关于单电子晶体管来说，假如它们能在室温下工作，则请求量子点的直径要小至1-5纳米的范围。这些微小尺度请求已超越了传统光刻所能到达的精度极限。有几项技术可望用于如此的衬底图形制造。Full play to the advantages of quantum dots, we have to control the position of the quantum dots, size, composition and density. One option is to quantum dots grown in engraved with graphics on the substrate of once. The lateral size of each quantum dot is 10 to 20 nm range (or smaller caliber prevent high excited state energy level effect, such as information about GaN quantum dots of the transverse size is smaller than 8 nm) talents to complete optoelectronic devices at room temperature, the substrate etching such small graphics play is a technical problem. On single electron transistor, if they can work at room temperature, then request the diameter of the quantum dots is smaller to the range from 1 to 5 nm. These small scale request has surpassed the traditional lithography can reach the precision of the limit. There are several techniques could be used for manufacturing such a substrate graphics. 电子束光刻通常能够用来制造特征尺度小至50纳米的图形。假如特殊薄膜可以用作衬底来最小化电子散射问题，那特征尺寸小至2纳米的图形能够制造出来。Electron beam lithography can usually used in the manufacture characteristic scale as small as 50 nm graphics. If special film can be used as a substrate to minimize electron scattering problem, the feature sizes as small as 2 nm graphics can be created. 聚焦离子束光刻是一种机制上相似于电子束光刻的技术。Focused ion beam lithography is a mechanism similar to the electron beam lithography technique. 扫描微探针术能够用来划刻或者氧化衬底外表，以至能够用来支配单个原子和分子。最常用的办法是基于资料在探针作用下引入的高度局域化加强的氧化机制的。Scanning microprobe technique can be used to delimit carved or oxide substrate appearance, and can be used to control individual atoms and molecules. The most commonly used method is based on the materials under the action of a probe into the oxidation mechanism of highly localized strengthen. 多孔膜作为淀积掩版的技术。多孔膜能用多种光刻术再加腐蚀来制备，它也能够用简单的阳极氧化办法来制备液压打包机。Porous membrane as deposition mask version of the technology. Porous membrane can use a variety of lithography technique to add corrosion to preparation, it can also of anodic oxidation in a simple way to preparation. 倍塞（diblock）共聚物图形制造术是一种基于不同聚合物的混合物可以产生可控及可反复的相别离机制的技术。Times plug () diblock copolymer graphics manufacturing technique is a kind of based on a mixture of different polymers can be controlled and repeated phase separation mechanism of the technology. 与倍塞共聚物图形制造术严密相关的一项技术是纳米球珠光刻术。此项技术的根本思绪是将在旋转涂敷的球珠膜中构成的图形转移到衬底上。And graphics make times plug copolymer is closely related to a technology nano ball bead light carving art. The fundamental thoughts of the technology is in the spin coated ball membrane composed of graphics transferred to the substrate. 将图形从母体版转移到衬底上的其他光刻技术。几种所谓“软光刻“办法， 比方复制铸模法、微接触印刷法、溶剂辅助铸模法以及用硬模版浮雕法等已被探究开发防水板。Will be transferred to the substrate of graphics from mother other lithography. Several so-called soft lithography, such as replication molding method, micro contact printing method, auxiliary solvent casting method and hard template anaglyph method has been to explore the development. 随着器件持续微型化的趋向的开展，普通光刻技术的精度将很快到达它的由光的衍射定律以及资料物理性质所肯定的根本物理极限。经过采用深紫外光和相移版，以及修正光学近邻干扰效应等措施，特征尺寸小至80 nm的图形已能用普通光刻技术制备出。但是不大可能用普通光刻技术再进一步显著减少尺寸。采用X光和EUV 的光刻技术仍在研发之中，可是开展这些技术遇到在光刻胶以及模版制备上的诸多艰难。目前来看，固然也有一些具应战性的问题需求处理，特别是需求克制电子束散射以及相关联的近邻干扰效应问题，但投影式电子束光刻似乎是有希望的一种技术泰山奇石。扫描微探针技术提供了能分辨单个原子或分子的无可匹敌的精度，可是此项技术却有固有的慢速度，目前还不分明经过给它加装阵列悬臂樑能否使它到达能够承受的刻写速度。With continuous miniaturization of device development trend, the precision of the ordinary lithography will soon reach it by the law of light diffraction and material physical property must be the fundamental physical limits. After adopting deep ultraviolet light and phase shift, and fixed optical near interference effect and other measures, feature sizes as small as 80 nm graphics can use ordinary lithography was prepared. But is unlikely to use conventional lithography techniques significantly reduce the size further. Using X-ray and EUV lithography technology is still under development, but these met in photoresist technology and some difficult on the template preparation. For now, it is have some problem of the nature of battle demand, especially demand restrained beam scattering and associated neighboring interference effect, but the projection electron beam lithography seems to be a