离子辐照对单晶Si中预注入B原子扩散的影响.pdf

25 1 2 2o 01 12 MeV F 0 5keV B n Si 1 B S i F 0 B g S iOz B g E DICADA s 1 3 Si p n B P IED 1 1 nm p n Si IZD D p n D M IZD D B m 1 m HIG H ENER G Y P HYS IC S AND NIjC IZAR P HYS IC S Vo1 25 No 12 Dec mm1 Si B 73fm o B J S ealy A Ne jim R M Gwilliam School d Eleetrmie Ene needng Irz form uon Technolo gy and M th m ues UMV er tty d Surz Guile ed GU2 7XH 1 JK In s 1244 1 2 2 S 4 70cm n S 1 5iE eV B 3 3 101 4ioz zsJcm2 70 20 1MeV Si 0 5MeV O F Si 1 101 2 l x 101 6ionsh Id F O 5 1OE Sion Jcm2 RTA k mo t los Si Si02 B sm ox Separated by IMplantation of OXygen sm ox I 50nmSi 5OnmBOX Si SL MOX E l oom s 115nmBOX Si sm ox E 190nd i 370nmBOX Si BOX Si02 sm ox 0 Si Si02 Si SE R fs B RBSh DICADA MeV Si 3 1 SIMS B 1MeV Si B TED 2 l x 1onionsjcm 1MeV Si B 3 1 10 onsh z d B TED 4 1x 102 6ions em2 B TED 1MeV Si B IZD 2 1MeV Si Si S i B 1239 1 2 S i S i S i R Jc S iz O S i 1 M e VE M 1xIO nio n Ie d zA s 1 M e V S i 1x1 i Jcd z v s lM e V S i l xlot io n Je m 2 RBSK DICADA 3 SIMS RBSh 1MeV Si Si B S i B B 1 101 4ionsjcnf S i t E 1 01 e 1 tk 1 2 Si Si Si B B S i S i B TED 3 2 D ICADA S i S i s 1 M eV S iJ x 1 0l J e d S 4 1 M e V S Ll x 1 01 4io m J cm 24 A s IM e V E 1x1 6 i J cn 2 2 0 5x l02 5ions cm z 0 5MeV O F B 4 o F B 1 ED 0 F RBSh DICA DA B D Si F F B IZD 0 O V B TED MeV MeV B T ED sm ox SIMOX Siq 124 1 B E E S i o 50 10050200250 300 a tm m 4 0 5MeV O F B IZD 51 E eV B skeV B R TA A V B 1MeV S l x 1 02 io leat RTA V51 E eV B 0 5MeV F 5x IO Uiended N TA o sheV B 0 SMeV O 5x 10IS m Jed M R TA 2 o sOIoeaJOdmmo 5 Si sm ox B S i 5keV B s 5keV B RTA A a 5IE EV B IM eV E M l x lO Mh ended R TA 5 Si SIMOX B TED MeV 3 sm ox sm ox B TED V S IMOX E 5keV B 1MeV E M l x 1 01 4iended RTA 1 2 4 MeV Si sm ox MeV B TED Si BOX EOR p n S i 1 2 p n MeV B EOR B Refemm em lO vate A C ite sL F O m M a d N ucl Ina m M d 1 9 99 BE m 1 1 2 2 C O IlM E L W e e m e m k C O m N E B e t d N u cl Inum M e th 1 9 9 g I z 98 1 3 S to ll P A G e ma z m H J E 4 ha m D J I A pp P hy 1 997 9 6 091 6 4 C lave rie A a a z L B O nde C e t d N ta e l IM m M e ths 1 995 2 m9 5 C o w e m N E B ca e e iaoA C t r J S a d A Wl m Iam 1 996 8 z ng o 1 1 5 6 D F B e yD F cho wJ W hHdaE a d A p p1 P hy hu 1 9 98 1 2 63 1 2 7 c m N E B A Imie f D O m M a d N u e l In s m M e th 1 9 9 9 B2 482 25 7 2 61 an s JKB I243 1244 ERects of Ion Irradiation on the DifT US ion of Pre implanted B Atoms in Cry stalline Silicon LIIJ Chang Id ong IF Z a ma qFModem phyms me C ha e A C ede w qr sdem e s u ndo 730000 Chu a B J Sealy A Nej im R M Gwilliam S d eot qr Etse w d c EF W ee dne F F aa T ed no teey d E Maa he ma te Unmfds y o f agre y a f2 7XH G uit S umy UK A bet sct N type crystaA line Si 100 implanted with 5keV B ions was subsequently i ad ated wi MeV Si O and F ions u e B atom pma les wem measured by means of secondaE 7 ion mass spec tmmeter after the tma ment of rapid thermal am ealine 111 e results show a the transient enhanced diffusion of B atoms is d ectively li mited by the post implantation d hie I energy ions hidz dose At the same irmdiation conditions it is found a the existence of a Si02 layer in the near surface d si is even m m egeetive in suppressing the tm mient enhanced dib Sion d the doped B atom 111e mS UIts are quaJHath ely discussed M combination wi the analyses of RBS c mea81 1 menu and cd culation of the DICA