晶体生长计算软件FEMAG系列之晶体生长各种方法.ppt

晶体生长计算软件FEMAG之晶体生长方法汇编 BulkCrystalsMaterials FEMAGSoft 2010 Wholeindustriesrelyonbulk growncrystalsofavarietyofmaterials Silcion GermaniumforsemiconductorandsolarindustryIII Vcompunds GaAsInpInSbSiCGaNetc fortelecommication LED defenseandsolarindustryHgCdTeforinfraredimagingFluoride Halide oxidescintillatorcrystalsforhigh energyphysics medicalimagingandopticalindustriesetc BulkCrystalGrowthMethods FEMAGSoft 2010 Czochralski CZ FloatingZone FZ DirectionalSolidification DSS Vertical HorizontalBridgman VB VerticalGradientfreeze VGF PhysicalVaporTransport PVT SiliconCrystalGrowthMethod FEMAGSoft 2010 StringRibbon PatentedbyEVERGREEN EFG Hotzoneimportance FEMAGSoft 2010 ThekeyimportantthingforallgrowthprocessesistheHotzoneandassociatedoperatingcondtions whichcontrolthemajorcharactersticsofcrystals andthestructureofthehotzoneandassociatedoperatingconditionsarethemajorknow howofeachICwafermanufacturers CzochralskiGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 CzochralskiGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 CzochralskiMethod Around90 singlecrystalgrownbyCzmethodinICindustryPartofGermaniumcrystalgrownbyCZmethodSappherandlotsCompoundcrystalgrownbyCZoritsvariants suchasKyropoulos LECetc MarketshareofCZwaferinsolarmarketslightlylowerthanDSSmcwafer CzochralskiGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 HottopicsonceinICindustry andcurrentlyhottopicsforsolar allaboutgrowthyield andthenqualityimprovement CCZwithmulti meltpartitionsMCZGrowthrateimprovement Impuritycontrol oxygen carbon anddopantsmicrovoidsanddislocationsoncellefficiency CzochralskiGrowthMethod MCZ FEMAGSoft 2010 FEMAGSoft 2006 Costreductionislimitedwithrespectedtotheequipments consumablesmodificationsInnotativeeffortsarerequiredtofurtherbeimproved CzochralskiGrowthMethod MCZ FEMAGSoft 2010 FEMAGSoft 2006 Vertical Cusp Horizontal FEMAGSoft 2006 CzochralskiGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 Itisassumedthatforacertainregionofthethermalstressesthecrystalisinametastablestate andacertainperturbationenergyisnecessarytoleavethismetastablestate Bythismodel itcanbeunderstoodthatthecrystalcanbearhigherstressesthanthecriticalvaluesdeterminedbyatensiletest Conformingtotheclassicalideaofdislocationgenerationitstartssomewherenearthegrowthinterface wherethehigheststressesarelocatedandthengrowsdeeperintothecrystal Atthesepointsofhighstresslevel thedislocationprocessmaybestartedduetoaperturbationenergyresultingfrom temperaturefluctuations hydrodynamicand orgrowthsysteminstabilities localbackmelting particlesreachingthegrowthinterface Structurelosecurrentlyisthemainissueongrowthyield FloatingZoneGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 Mainlyforhigh powerdevicesWorld recordcellefficiencyisbasedTooexpensiveduetoequipmentandfeedstock DSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 DSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 ManufacturersarebenefitingfromeffortsdidonCZ VGFprocessforICinpastyears DSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 MajorissuesforDSSgrowthprocess GrowthyieldimprovementGrain sizecontrolandimprovementDopant Impurities C N distributionDislocation GrowthrateHeaterpowerdistribution NotkeyissuesforDSSgrowthprocess Costisonly1 3orCZprocess morethan50 marketshareLowoxygenconcentrationLowrequirementsofsiliconfeedstock HottopicsforDSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 Continuousfeeding sameasCCZ thepontentialforcostreductionislimited RequirementofadditonalfeedingsystemRequirementofsmall sizeorevensiliconpowderfeedstock Monocrystallinecasting CZ likequalitybutwithDSScost thenhugecostreductionNoadditionalinvestmentonequipmentHotzonedesign temperatureprofilenearseedandheaterpowerdistribution LeadersareBPSolar GTSolarandChinesecompanies HottopicsforDSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 HottopicsforDSSGrowthMethod FEMAGSoft 2010 FEMAGSoft 2006 Factsaboutmono ingotbyDSS 1 Thecellefficiencyofgoodqulaitymono waferbyDSSisveryclosetomono waferbyCZ 18 8 fromGT 2 Onaverage thedifferencebetweenmonoCZandDSSisonly0 5 1 difference and1 higherthantraditionalDSSmulti