水晶工作原理.ppt

July2nd 2001 IntroductionofQuartzCrystal Content CharacteristicofQuartzMaterialCharacteristicsofCrystalUnitsChoosetheRightCrystalUnit CharacteristicsofQuartzMaterial QuartzMaterialPizeoElectricityWhyisAT CutFrequencyvs ThicknessLapping Etching QuartzMaterial 1 材料成份 二氧化矽SiO2材料組成 正六方晶系TRIGONAL DIGONALCLASS 32材料特性 熔點1 750 1atm 相變點537 1atm硬度 7 2莫氏硬度 25 密度2 648Kg M3 25 壓電特性Y軸 機械軸MECHANICALAXIS光雙折性Z軸 光學軸OPTICALAXIS QuartzMaterial 2 QuartzMaterial 3 SYNTHETICQUARTZCRYSTAL AUTOCLAVEHYDROTHERMALMETHODRAWMATERIAL SilicaHIGHPRESSURE HIGHTEMPERATURE 400 HIGHTEMP STABILITY 0 2 LONGGROWTHTIME 1 6MonthHIGHPURITY Infra RedAbsorption IRA 3585CM 1 PiezoElectricity 1 Thepositiveelectric fieldisinducedwhenthemechanicforcepulltheOxygenatomoutoforiginalposition Thenegativeelectric fieldisinducedwhenthemechanicforcepushtheOxygenatomtowardcenterposition TheSiO2isalwaysinthestaticstateofelectricneutrial PiezoElectricity 2 Whenaelectricfieldapplied theinducedelectricfiledisgeneratedandforcetheOxygenatommoveoutward TheSiO2isalwaysinthestaticstateofelectricneutrial Whenaelectricfieldapplied theinducedelectricfiledisgeneratedandforcetheOxygenatommovecloser 振動模式 長度彎曲振動Length widthflexure伸縮振動Extensionalflexure輪廓振動Faceshearflexure厚度振動Thicknessshearflexure 基本波 Fundamental3倍頻 3rdovertone5倍頻 5thovertone WhyisAT Cut 1 WhyisAT Cut 2 LowFrequencyCT 380DT 520ET 660FT 570 HighFrequencyAT 35015 BT 490 各種切割角度 溫度之關係 WhyisAT Cut 3 AT切割角度 溫度之關係 WhyisAT Cut 4 Frequencyvs Thickness AT CutCrystal F MHz 1670 T um F kHz 1670 T mm or LapingMachinism Laping Etching 1 SurfaceTreatment Etching Laping Etching 2 Note Theroughnessandinter crackdataaredependetonthequartzmaterialandthetypeofabbresive Roughness Inter Crack CharacteristicsofCrystalUnit Structure ProcessEffectiveCircuitofCrystalUnitParameterofEffectiveCircuitMeasureingtheCrystalParameters StructureofSMDXTAL DipType StructureofSMDXTAL SMDType MetalLid QuartzBlank CeramicBase CoatedElectrode XTALProcess 1 DIP49UXTAL Baseplating Blankcleaning Annealing Automount Freq adjustment Curing Sealing Aging F Q C O Q C X TALProcess 2 SMDX TAL Alignment Blankcleaning BasePlating Blankautomount Curing Freq adjustment Annealing Autoseamwelding Aging FinalTest Fineleaktest Grossleaktest Lasermarking F Q C Taping EffectiveCircuitofXTAL 等效電路 Co ShuntCapacitanceCm MotionalCapacitanceLm MotionalInductanceRr MotionalResistance Note Motional meanstheFrequencyDependency ParametersofEffectiveCircuit 1 C0 Static Shunt Capacitance 一般C0 5 5pF以下 Dip49U 一般C0 3 5pF以下 SMD7 0 5 0 C0 0 2del fsn TheshuntcapacitanceincludethecapacitanceofXTALandstraycap ofpaste metalcap insidethepackage Mountingsystem的改變或base長度 材質不同C0值會變化0 2pF 1pF之間 C0小 起振電壓低 但CI較困難製造 Cm dynamiccapacitance C1 0 1 Kc fsn3 f ResonanceFreqencydel ElectrodeDiametern OrdinalNumberofHarmonics 1 3 5 7 kc CorrectionConstantkc 1 fundamentaloscillationkc 0 85 3rdovertonekc 0 75 5rdovertone ParametersofEffectiveCircuit 2 Lm DynamicInductance L1 1Ws2C1 低頻時 晶片較厚 WAFER較大 數HENRIES高頻時 晶片較薄 BLANK較小 數mH 12 fsC1 由MechanicalMass決定大小 ParametersofEffectiveCircuit 3 R1 DynamicResistance Rr R P LA A R 相關原因 1 音響學上的損失晶片表面平行度大氣R1 N2R1 真空中R1石英晶片表面清潔度晶片表面與鍍膜層附著性電極面之設計石英原料材質石英晶片表面處理 ParametersofEffectiveCircuit 4 MeasuringtheCrystalParameters CalculationMethodMeasurementMethodPhysicalLoadMethod PiNetWorkMethod OcsillationMethod ChoosetheRightCrystal PrincipleofOscillationCharacteristicsofLoadCapacitancePullability Trim Q valueReadtheTestingDataSettingtheSpecification PrincipalofOscilation 振盪原理 PrincipalofOscilation 1 振盪原理 GainCurveofOscCircuit PrincipalofOscilation 2 振盪原理 GainCurveofOscCircuit PrincipalofOscilation 3 振盪原理 GainCurveofOscCircuit PrincipalofOscilation 4 負性阻抗 R R Frequency 10 0 20 0 30 0 40 0 50 0 從XTAL兩個端點向振盪線路看進去之頻率對阻抗關係 CharacteristicofLoadCapacitance 1 CharacteristicofLoadCapacitance 2 LoadCapacitanceCLCL Cd Cg Cs Cg Cd Cd Cg Cs Cs StrayCapacitance一般2 3pFFL FR 1 C1 2 C0 CL CL愈小 Cs影響愈大 愈不穩定 CL太大 雖Cs影響小 但power必須加大 耗電 建議 CL以18 20pF為主 電容成本低不要省 且應利用Cd Cg來調整CL 而非用X TAL來就電容 CharacteristicofLoadCapacitance 3 FL FR 1 C1 2 C0 CL CL Cd Cg Cs PullingRangeFromCL1 CL2 Pullability Trim Q value 1 DL FL1 FL2FR C1 CL2 CL1 C0 CL1 C0 CL2 S dFLdCL C12 C0 CL 2 TrimSesitivityatCL ExtremlyImportant Pullability Trim Q value 2 Pullability Trim Q value 3 Fundor3rd Fundor3rd Q值 thequalityofquartzXTAL Q 2 Fr LmR1 12 Fr R1 Cm IsthereanyrelationbetweenQ valueandPullability Pullability Trim Q value 4 ReadtheData 1 ReadtheData 2 ReadtheData 3 ThisSpectrumisonlyshowninXTALunit Notinexactoutputofoscillatedcircuit Why ReadtheData 4 ReadtheData 5 ReadtheData 6 SettingtheSpecification 1 GenaralSpecifications PackageType DimensionsElectricalCharacteristics NorminalFrequency OscillationMode LoadCapacitance FrequencyTollerance 25Degree OperationTemperatureRange FrequencyStabilityoverOperationTemp Range ESR EffectiveSeriesResistance ShuntCapacitance DriveLevel SettingtheSpecification 2 SpecialSpecifications ElectricalCharacteristics CmorLm Pulliabi