SCHMID太阳能电池工艺过程讲解.doc

S C H M I D T R A I N I N G Production and Process Flow生 产 流 程 Acid texturing 酸 的 制 绒 Removing of saw damage from wafers。切下硅片表面为不规则锯齿形 Reduction of reflection on the future cell surface due to the creationof a regular surface在未来电池表面我们所需要的是减少反射创建有规律表面结构Objective ：目的 Wafer after sawing Wafer after acid texturing切下的硅片 制绒后的硅片Objective目的 Aim is a hole peak surface structure as uniform as possibleFunctional principle 目的是获得表面结构完全相同结构（窝的底、顶）0.01mm适合的原则。Functional principle实用原则 Wafers immerse in an acidic bath硅片沉浸在酸溶液浴缸里 Surface is etched by several m (1m = 0,001mm) 表面刻蚀掉0.001mm Lay out 展开图 Machine lay out is modular机器是按模组展开 M1 M2 M3 M4 M5 M6 M7 M8 M9Wafer HF & HNO3 Rinsing KOH Rinsing HCl /HF Rinsing Drying WaferInlet Etching Polishing Cleaning Outlet Functions 作用 （功能） M1 Detection of incoming wafers。硅片输送与跟踪监测。M1 M9 Transport of wafers。硅片的传送。M2 M8 Exhaust of atmosphere in the modules。在单元里的排气装置。M2 Making of a HF HNO3 bath, immersion of wafers。用制成的HF-HNO3药液沉浸硅片进行硅片刻蚀。M3 Rinsing of wafers。清洗硅片。M4 Making of a KOH bath, immersion of wafers。用制成的KOH药液沉浸硅片进行多孔硅表面处理。M5 Rinsing of wafers。清洗硅片。M6 Making of a HF or HCl bath。在制成的HF和HCI溶液进行输水（中和）M7 Rinsing of wafers。清洗硅片。M8 Drying of wafers。硅片烘干处理。M10 Detection of outgoing wafers。 输出硅片的监测。Functions 作用 （功能） M1 Detection of incoming wafers 硅片正确到达的监测。M1 M2 M3 M4 M5 M6 M7 M8 M1 Detection of incoming wafers 硅片正确到达的监测。 Sensor detects incoming cells。传感器能够正确反应电池片是否到达。 Pulse generator measures transport velocity (1 mm = 1 pulse ) 脉冲发生器是记录传送多长距离。1mm=1脉冲 Due to this information the PLC knows the position of the cells in themachine机器通过传感器和脉冲发生器的信息PLC可准确电池片的位置。M1 Detection of incoming wafers 硅片正确到达的监测。Sensors Pulse Generator传感器 脉冲发生器M1 M9 Transport of wafers 硅片的运送M1 M2 M3 M4 M5 M6 M7 M8 M9 M1 M9 Transport of wafers 硅片的运送 Wafers run on transport rollers。硅片在转动滚轮上不断地传送。 Disc rollers guarantee immersion in the baths圆盘滚轮确保沉浸硅片进入药缸的位置。 Centering rollers at regular distances keep wafers in track定位中心滚轮使硅片保持一定距离进入药缸里。M1 M9 Transport of wafers 硅片的运送Disc roller Transport roller Centering roller定位滚轮 传送滚轮 定中心滚轮M2 M9 Exhaust of atmosphere in the modules 在M2-M9单元里空气排气装置。 M1 M2 M3 M4 M5 M6 M7 M8 M9M2 M8 Exhaust of atmosphere in the modules。 在M2-M8单元里空气排气装置。 Evacuation of evolving gases and vapours。排出正在演变或生成的气体和蒸汽。 Exhaust directly above the bath, in the tanks and the interior of theprocess modules。在药缸里和内部单元加工过程中直接从一侧排出。 Important factor of bath consumption optimum adjustement is recommendable。药缸的重要因素可以储存和充当调节器的作用。Separate exhaust systems contaminated exhaust air (HF modules) and not contaminated exhaust air (other modules) 不同的排气装置系统酸单元污染排气和其他单元污染的排气。 Functioning of the contaminated exhaust air monitored by exhaustair sensor排气装置上的传感器的功能是用于监测污染排气程度的。M2 M8 Exhaust of atmosphere in the modules 在M2-M8单元里空气排气装置。 Tank exhaust Modul interior exhaust Exhaust above bath药缸排气 单元内部排气 药缸上方排气M2 Making of a HF / HNO3 bath, immersion of wafers M2硅片沉浸在HF / HNO3制成的溶液中。（刻蚀）M1 M2 M3 M4 M5 M6 M7 M8 M9 M2 Making of a HF / HNO3 bath, immersion of wafers M2硅片沉浸在HF / HNO3制成的溶液中。（刻蚀）Texture etching of wafers硅片的制绒 Reagents: Nitric acid HNO3 65%, fluoridic acid HF5 0%, deionized water H2O DI 试剂：65%,的硝酸，5 0%,氢氟酸，电离作用的水。Make up in make up tank 补充药业的预留缸。 Dosing by dosing box 定量给料的自动补液箱 。Redosing by panel counter用表盘计数器修正流量大小。 Bath control by sample titration药缸可以控制(绿色)滴定抽样。 Cooling of the bath by heat exchanger通过热交换器进行缸液冷却。Continous circulation of the bath药缸的药液是不断循环的。 Distribution pipes for even circulation of the solution around the wafers in the bath在药缸的硅片周围溶液是通过分布的小管提供有规律循环的。M2 Making of a HF / HNO3 bath, immersion of wafers M2硅片沉浸在HF / HNO3制成的溶液中。（刻蚀） Two tank system: 1x make up tank and 1x working tank两缸系统：一缸补偿、一缸工作。Blowing- off of remaining HF / HNO3 solution from the wafers atleaving the bath to minimize drag out 吹掉硅片剩余的氢氟酸、硝酸液体离开药缸进入工序。 M2 Making of a HF / HNO3 bath, immersion of wafers M2硅片沉浸在HF / HNO3制成的溶液中。（刻蚀）Pneumatic Tank Pneumatic Heat Circulation pump valve exchanger pump M2 Making of a HF / HNO3 bath, immersion of wafers M2硅片沉浸在HF / HNO3制成的溶液中。（刻蚀）Dosing Level Analog level FilterTank switch meterM3 Rinsing of wafers 硅片的清洗 M1 M2 M3 M4 M5 M6 M7 M8 M9 M3 Rinsing of wafers 硅片的清洗 To stop chemical reaction终止化学反应。 Spray bars flood wafers with rinsing water硅片被喷出雾的清水淹没清洗。 Rinsing cascade: Pre- rinsing with slightly contaminated water from the main rinsing to economize water consumption清水小瀑布：也就是先使用轻微污染的水清洗，后用干的净清水是清洗。（节水）Removing of rinsing water from the cell surface by Miyako soft rollers between the rinsing steps and at the end 最后电池片是通过两个柔软海绵滚轮除去电池片表面清水。M3 Rinsing of Cells 清洗电池片Principle of rinsing cascade小瀑布工作原理M3 Rinsing of wafers 25Blowing- off Miyako Spray installation softroller bar 吹走设备 柔软 海绵滚轮 喷雾棒M4 Making of a KOH bath, immersion of wafers M4硅片沉浸在制成KOH的溶液中M1 M2 M3 M4 M5 M6 M7 M8 M9 M4 Making of a KOH bath, immersion of wafers M4硅片沉浸在制成KOH的溶液中To neutralize, and to etch in the nm range and to polish中和和刻蚀多孔硅以及表面抛光。 Reagents: KOH 45%, H2O DI 试剂：45%,的KOH溶液和电离作用的水。 Dosing by dosing tank量配池可自动供给。 Continous circulation of the bath在药缸的药液是不断循环连续的。 Distribution pipes for even circulation of the solution around the wafers in the bath在药缸的硅片周围，溶液是通过分布的小管提供有规律循环的。 Blowing- off of remaining KOH solution from the wafers at leaving the bath to minimize drag out 。 吹掉硅片剩余的氢氧化钾液体离开药缸进入下道工序。 M4 Making of a KOH bath, immersion of wafers M4硅片沉浸在制成KOH的溶液中 Distribution pipes Conductivity meter 分布的液管 电导计M5 Rinsing of wafers 硅片的清洗M1 M2 M3 M4 M5 M6 M7 M8 M9 To stop chemical reaction终止化学反应 Spray bars flood wafers with rinsing water硅片被喷出雾状的清水淹没清洗。 Rinsing cascade: Pre- rinsing with slightly contaminated water fromthe main rinsing to economize water consumption清水小瀑布：也就是先使用轻微污染的水清洗，后用干的净清水是清洗。（节水） Removing of rinsing water from the cell surface by Miyako soft rollers between the rinsing steps and at the end 最后电池片是通过两个柔软海绵滚轮除去电池片表面清水。M5 Rinsing of wafers 硅片的清洗M6 Making of a HF or HCl bathM6硅片沉浸在制成HF和HCl的溶液中。M1 M2 M3 M4 M5 M6 M7 M8 M9M6 Making of a HF or HCl bathM6硅片沉浸在制成HF和HCl的溶液中。To clean and to establish a hydrophilic / hydrophobic surface去金属离子（HCl）,表面疏水（HF）。 Reagents: KOH 45%, H2O DI试剂：45%的氢氧化钾、电离作用的水。 Dosing by dosing tank量配池可自动供给 Redosing by conductivity value or panel counte药液可以通过电导率或表盘计数器控制。 Bath control by conductivity measuring and sample titration药缸浓度控制可用电导率测量和滴定样品Make up in tank 药液在药缸里配置At room temperature室温 Continous circulation of the bath在药缸的药液是不断循环连续的。 Blowing- off of remaining KOH solution from the wafers at leavingthe bath to minimize drag out吹掉硅片剩余的氢氧化钾液体离开药缸进入后工序。 M7 Rinsing of wafers 硅片清洗M1 M2 M3 M4 M5 M6 M7 M8 M9To stop chemical reaction终止化学反应。Spray bars flood wafers with rinsing water硅片被喷出雾状的清水淹没清洗。 Rinsing cascade: Pre- rinsing with slightly contaminated water fromthe main rinsing to economize water consumption清水小瀑布：也就是先使用轻微污染的水清洗，后用干的净清水是清洗。（节水） Removing of rinsing water from the cell surface by Miyako soft rollers between the rinsing steps and at the end 最后电池片是通过两个柔软海绵滚轮除去电池片表面清水。M8 Drying of wafers 硅片的烘干 M1 M2 M3 M4 M5 M6 M7 M8 M9 Dry jets blow high volumes of filtered and heated air at a low pressure on the wafers硅片上通过气泵、细过滤产生一定热量气体进行表面烘干。 Coarse filter before the blower and fine filter afterwards respectively before the dry- jets空气经过粗过滤后再经细过滤最后经过风刀 Blower: 2 units at 3 kW nominal power each 两个3 kW气泵在各自单元中 Air is