文献翻译——光电传感器的概述

第1页外文文献资料PhotoelectricsensorKeyword:photoelectriceffectphotoelectricelementphotoelectricsensorclassificationsensorapplicationcharacteristics.Abstract:intherapiddevelopmentofscienceandtechnologyinthemodernsocietymankindhasintotherapidlychanginginformationera,peopleindailylife,theproductionprocess,relymainlyonthedetectionofinformationtechnologybyacquiring,screeningandtransmission,toachievethebrakecontrol,automaticadjustment,atpresentourcountryhasputdetectiontechniqueslistedinoneoftheprioritytothedevelopmentofscienceandtechnology.Becauseofmicroelectronicstechnology,photoelectricsemiconductortechnology,opticalfibertechnologyandgratingtechnicaldevelopmentmakestheapplicationofthephotoelectricsensorisgrowing.Thesensorhassimplestructure,non-contact,highreliability,highprecision,measurableparametersandquickresponseandmoresimplestructure,formetc,andflexibleinautomaticdetectiontechnology,ithasbeenwidelyappliedinphotoelectriceffectasthetheoreticalbasis,thedevicebyphotoelectricmaterialcomposition.Text:First,theoreticalfoundation-photoelectriceffectPhotoelectriceffectgenerallyhavethephotoelectriceffect,opticaleffect,lightbornvoltseffect.Thelightshinesinphotoelectricmaterial,accordingtotheelectronicabsorptionmaterialsurfaceenergy,ifabsorbedenergylargeenoughelectronicelectronicwillovercomeboundfrommaterialsurfaceandentertheoutsidespace,whichchangesphotoelectronmaterials,thiskindofphenomenonbecometheconductivityofthephotoelectriceffectAccordingtoEinsteinsphotoelectroneffect,photonismovingparticles,eachphotonenergyforhv(vforlightfrequency,hforPlanckconstant,h=6.63*10-34J/HZ),thusdifferentfrequencyofphotonshavedifferentenergy,light,thehigherthefrequency,thephotonenergyisbigger.Assumingalltheenergyphotonstophotons,electronicenergywillincrease,increasedenergypartofthefetter,positiveionsusedtoovercomeanotherpartofconvertedintoelectronicenergy.Accordingtothelawofconservationofenergy:Type,mforelectronicquality,vforelectronicescapingthevelocity,Amicroelectronicstheworkdone.第2页FromthetypethatwillmaketheoptoelectroniccathodesurfaceescapethenecessaryconditionsarehA.Duetothedifferentmaterialshavedifferentescaping,soreactivetoeachkindofcathodematerials,incidentlighthasacertainfrequencyisrestricted,whenthefrequencyofincidentlightunderthisfrequencylimit,nomatterhowthelightintensity,wontproducephotoelectronlaunch,thisfrequencylimitcalledredlimit.Thecorrespondingwavelengthfortype,cforthespeedoflight,Areactiveforescaping.Whenisthesun,itselectronicenergy,absorbtheresistivityreduceconductivephenomenoncalledopticaleffects.Itbelongstothephotoelectriceffectwithin.Whenlightis,ifinsemiconductorelectronicenergybigwithsemiconductorofforbiddenbandwidth,theelectronicenergyfromthevalencebandjumpintotheconductionband,form,andatthesametime,thevalencebandelectronicleftthecorrespondingcavities.Electronics,cavitationremainedinsemiconductor,andparticipateinelectricconductiveoutsideformedunderthecurrentrole.Inadditiontometalouter,mostinsulatorsandsemiconductorhavephotoelectriceffect,particularlyremarkable,semiconductoropticaleffectaccordingtotheoptoelectronicsmanufacturingincidentlightinherentfrequency,whenlightresistanceinlight,itsconductivityincreases,resistancedrops.Thelightintensityisstrong,itsvalue,ifthesmaller,itsresistancetostoplightbacktotheoriginalvalue.Semiconductorproducedbylightilluminatethephenomenoniscalledlightemf,bornvoltseffectontheeffectofphotoelectricdeviceshavemadesi-basedones,photoelectricdiode,controlthyristorandopticalcouplers,etc.Second,optoelectroniccomponentsandcharacteristicsAccordingtotheoutsideoptoelectronicsmanufacturingoptoelectronicdeviceshavephotoelectron,inflatablephototubesandphotoelectrictimesoncetube.1.Phototubesphototubesarevariousandtypicalproductsarevacuumphototubesandinflatablephototubes,lightitsappearanceandstructureasshowninfigure1shows,madeofcylindricalmetalhalfcathodicKandislocatedinthewirescathodicaxisofanodeinApackageofsmokeintothevacuum,whenincidentlightwithinglassshellinthecathode,illuminateAsinglephotontookallofitsenergytransfertothecathodematerialsAfreeelectrons,soastomakethefreedomelectronicenergyincreaseh.Whenelectronsgainenergymorethanescapeofcathodematerials,itreactiveAmetalsurfaceconstraintscanovercomeescape,formelectronemission.Thiskindofelectroniccalledoptoelectronics,optoelectronicescapingthemetalsurfaceforafterinitialkineticenergyPhototubesnormalwork,anodepotentialthanthecathode,showninfigureInoneshotmorethanredlightfrequencyispremise,escapefromtheoptoelectroniccathodesurfacebypositivepotentialattractedtheanodeinphotoelectrictubeformingspace,calledthecurrentstream.Theniflightintensityincreases,thenumberofphotonsbombardedthecathodemultiplied,unitoftimetolaunch第3页photoelectronnumberarealsoincreasing,photo-currentgreatens.Infigure2showscircuit,currentandresistanceisthevoltagedropacrosstheonlyafunctionoflightintensityrelations,soastoachieveaphotoelectricconversion.WhentheLTToptoelectroniccathodeK,electronicescapefromthecathodesurface,andwasthephotoelectricanodeisanelectriccurrent,powerplantsabsorbdeoxidizationdeviceintheloadresistance-I,thevoltagePhototubesphotoelectriccharacteristicsfig.03shows,fromthegraphinfluxknowable,nottoobig,photoelectricbasiccharacteristicsisastraightline.图1光电结构图图2光电管测量电路图3光电管光电特性2.Photoelectrictimeshadthesensitivityofvacuumtubeduetolow,sowithpeopledevelopedhasmagnifiedthephotomultipliertubesphoto-currentability.Figure4isphotomultipliertubestructureschematicdrawing.图4光电倍增结构示意图FromthegraphcanseephotomultipliertubesalsohaveAcathodeKandananodeA,andphototubesdifferentisinitsbetweenanodeandcathodesetupseveralsecondaryemissionelectrodes,D1,D2andD3.Theycalledthefirstmultiplyelectrode,thesecondmultiplyelectrode,.Usually,doubleelectrodefor1015levels.Photomultipliertubesworkbetweenadjacentelectrode,keepingacertainminimum,includingthecathodepotentialpotentials,eachmultiplyelectrodepotentialfilteringincreases,theanodepotentialsupreme.Whentheincidentlightirradiation,cathodicKescapefromtheoptoelectroniccathodemultipliedbyfirstaccelerated,byhighspeedelectrodeD1bombardedcausedsecondaryelectronemission,D1,anincidentcangeneratemultiplesecondaryelectronphotonics,D1emitofsecondaryelectronwasD1,D2askedelectricfieldacceleration,convergedonD2andagainproducesecondaryelectronemission.Sograduallyproducesecondaryelectronemission,makeelectronicincreasedrapidly,theseelectronicfinallyarrivedattheanode,formalargeranodecurrent.Ifanlevel,multiplyelectrodesatalllevelsforsigma,themultiplicationofrateisthemultiplicationofphotomultipliertubescanbeconsideredsigman第4页rate,therefore,photomultipliertubehashighsensitivity.Intheoutputcurrentislessthan1mAcircumstances,itinaverywidephotoelectricpropertieswithinthescopeofthelinearrelationshipwithgood.Photomultipliertubesthischaracteristic,makeitmoreforlightmeasurement.3.andphotoconductiveresistancephotoconductiveresistancewithintheworkingprincipleisbasedonthephotoelectriceffect.Insemiconductorphotosensitivematerialendsofmountelectrodelead,itcontainstransparentwindowsealedinthetubeandshellelementphotoconductiveresistance.Photoconductiveresistancepropertiesandparametersare:1)darkresistancephotoconductiveresistanceatroomtemperature,totaldarkconditionsstableresistancecalleddarkresistance,atthecurrentflowresistanceiscalleddarkcurrent.2)lightresistancephotoconductiveresistanceatroomtemperatureandcertainlightingconditionsstableresistancemeasured,rightnowiscalledlightresistanceofcurrentflowresistanceiscalledlightcurrent.4.volt-amperecharacteristicsofbothendsphotoconductiveresistanceaddedvoltageandcurrentflowsthroughphotoconductiveresistanceoftherelationshipbetweencalledvolt-amperecharacteristicsshown,asshowninfigure5.Fromthegraph,theapproximatelinearvolt-amperecharacteristicsthatuseshouldbelimited,butwhenthevoltageendsphotoconductiveresistance,lestthanshowndottedlinesofpowerconsumptionarea.图5光敏电阻的福安特性5.photoelectriccharacteristicsphotoconductiveresistancebetweenthepoles,lightwhenvoltagefixedtherelationshipbetweenwithbrightcurrentphotoelectriccharacteristics.CalledPhotoconductiveresistancephotoelectriccharacteristicsisnonlinear,thisisoneofthemajordrawbackofphotoconductiveresistance.6.spectralcharacteristicsisnotthesameincidentwavelength,thesensitivityofphotoconductiveresistanceisdifferentalso.Incidencewavelengthandphotodetectortherelationshipbetweenrelativesensitivitycalledspectralcharacteristics.Whenusedaccordingtothewavelengthrangebymetering,choosedifferentmaterialphotoconductiveresistance.7.responsetimebyphotoconductiveresistanceafterphoto-currentneed第5页light,overaperiodoftime(time)risetoreachitssteadyvalue.Similarly,instoplightphoto-currentalsoneed,overaperiodoftime(downtime)torestoretheitsdarkcurrent,thisisphotoconductiveresistancedelaycharacteristics.Photoconductiveresistanceriseresponsetimeandfallingresponsetimeabout10-110-3s,namelythefrequencyresponseis10Hz1000Hz,visiblephotoconductiveresistancecannotbeusedindemandquickresponseoccasion,thisisoneofthemainphotoconductiveresistanceshortcomings.8.andtemperaturecharacteristicphotoconductiveresistancebytemperatureaffectsgreatly,temperaturerise,darkcurrentincrease,reducedsensitivity,whichisanotherphotoconductiveresistanceshortcomings.9.frequencycharacteristicfrequencycharacteristicsreferstoanexternalvoltageandincidentlight,strongmustbephoto-currentIandincidentlightmodulationfrequency,therelationshipbetweenthef,photoelectricdiodeisthefrequencycharacteristicofthephotoelectrictriodefrequencycharacteristics,thisisbecauseofthephotoelectrictriodeshotyankeestherecapacitanceandcarrierbase-combedneedtimessake.Byusingtheprincipleofthephotoelectricefficiencyofoptoelectronicsmanufacturingfrequencycharacteristicsoftheworst,thisisduetocapturechargecarriersandreleasechargeneedacertaintimessake.Three,photoelectricsensorsPhotoelectricsensoristhroughthelightintensitychangesintoelectricalsignalchangestoachievecontrol,itsbasicstructure,itfirstfigure6bymeasuringthechangeofchangeofconvertingthelightsignal,andthenusingphotoelectricelementfurtherwilllightsignalsintoelectricalsignalbyphotoelectricsensorgeneral.Illuminant,opticalpathandoptoelectronics.Threecomponentsofphotoelectricdetectionmethodhashighprecision,fastresponse,non-contactwaitforanadvantage,butmeasurableparametersofsimplestructure,sensors,formflexible,therefore,photoelectricsensorinthetestandcontroliswidelyused.Byphotoelectricsensorgenerallyiscomposedofthreeparts,theyaredividedinto:transmitterandreceiveranddetectioncircuitshown,asshowninfigure7,transmitteraimedatthetargetlaunchbeam,thelaunchofthebeamfromsemiconductorilluminant,generallightemittingdiode(LED),laserdiodeandinfraredemissiondiode.Beamuninterruptedlaunch,orchangethepulsewidth.Receivershavephotoelectricdiode,photoelectrictriode,composedsi-basedones.Infrontofthereceiver,equippedwithopticalcomponentssuchaslensandaperture,etc.Initsbackisdetectioncircuit,itcanfilterouteffectivesignalandtheapplicationofthesignal.Inaddition,thestructuralcomponentsinphotoelectricswitchandlaunchplateandopticalfiber,trianglereflexplateissolidstructurelaunchdevice.Itconsistsofsmalltriangleconeofreflectivematerials,canmakeabeamaccuratelyreflectedbackfromplate,withpracticalsignificance.Itcanbeinwiththescopeofopticalaxis0to25,makebeamschangelaunchAnglefromarootalmostafterlaunchline,passesreflectionorfromtherotatingpolygon.some第6页basicreturns.图6光传感器的基本结构图7光传感器工作原理Photoelectricsensorisakindofdependonisanalyteandoptoelectronicsandlightsource,toachievetherelationshipbetweenthemeasuredpurpose,sothelightsourcephotoelectricsensorplaysaveryimportantrole,photoelectricsensorpowerifaconstantsource,powerisveryimportantfordesign,thestabilityofthestabilityofpowerdirectlyaffecttheaccuracyofmeasurement,commonlyusedilluminanthavethefollowingkinds:1.ledsisachangeelectricenergyintolightenergysemiconductordevices.Ithassmallvolume,lowpowerconsumption,longlife,fastresponse,theadvantagesofhighmechanicalstrength,andcanmatchandintegratedcircuits.Therefore,widelyusedincomputer,instrumentsandautomaticcontrolequipment.2.silklightbulbthatisoneofthemostcommonlyusedilluminant,ithasrichinfraredlight.Ifchosenoptoelectronics,constitutesofinfraredsensorsensitivecolourfiltercanbeaddedtothevisibletungstenlamps,butonlyfilterwithitsinfrareddoesilluminant,such,paredwithordinarylightlaserlaserwithenergyconcentration,directionalgood,frequencypure,coherenceaswellasgood,isveryideallightsources.Thelightsource,opticalpathandphotoelectricdevicecompositionphotoelectricsensorusedinphotoelectricdetection,stillmustbeequippedwithappropriatemeasurementcircuit.Thephotoelectriceffecttothemeasurementcircuit第7页ofphotoelectricelementofwiderangecausedchangesneededtoconvertthevoltageorcurrent.Differentphotoelectricelement,themeasurementcircuitrequiredisnotidenticalalso.Severalsemiconductorintroducesbelowoptoelectronicdevicescommonlyusedmeasurementcircuit.Semiconductorphotoconductiveresistancecanthroughlargecurrent,beinsousually,neednotequippedwithamplifier.Intheoutputpowerofdemandisbigger,canusefigure8showscircuit.Figure9(a)withtemperaturecompensationgiventhephotosensitivediodebridgetypemeasuringcircuit.Whentheincidentlightintensityslowchange,thereverseresistancephotosensitivediodeistheslowchange,thechangeofthetemperaturewillcausethebridgeoutputvoltage,mustcompensate.DriftPictureaphotosensitivediodeasthetestcomponents,anotherintoWindows,inneighboringbridge,thechangeofthetemperatureinthearmsoftheinfluenceoftwophotosensitivediode,therefore,caneliminatethesameoutputwithtemperaturebridgeroaddrift.Lightactivatedtriodeincidentlightinworkunderlowillumination,orhopetogetbiggeroutputpower,alsocanmatchwithamplifyingcircuit,asshowninfigure9shows.图8光敏电阻测量电路图9光敏晶体管测量电路a)光敏二极管b)光敏三极管Becauseevenintheglarephotosensitivebatteries,maximumoutputvoltagealsoonly0.6V,stillcannotmakethenextlevel1transistorhavelargercurrentoutput,somustaddpositivebias,asshowninfigure9(a)below.Inordertoreducethetransistorcircuitimpedancevariations,basesi-basedonestoreduceasmuchaspossiblewithoutlight,whenthereversebiasinheritinparallelaresistorsi-basedonesatbothends.Orlikefigure9(b)asshownbythepositivegediodeproducespressuredropandtestthevoltageproducedwhenexposedtolight,makesilicontubeestack,bthevoltagebetweenactuatorsthan0.7V,andconductionwork.Thiskindofcircumstancealsocanusesiliconlightbatteries,asshowninfigure10(c)below.第8页图10光电测量电路Semiconductorphotoelectricelementofphotoelectriccircuitcanalsouseintegratedoperationalamplifier.Siliconphotosensitivediodecanbeobtainedbyintegratingop-amplargeroutputamplitude,asshowninfigure11(a)below.Whenlightisproduced,theopticaloutputvoltageinordertoguaranteephotosensitivediodeisreversebiased,initspositivetoaddaloadvoltage.Figure11.(b)givethephotocelltransformcircuit,becausethephotoelectricsi-basedonesshort-circuitcurrentandilluminationofalinearrelationshipbetween,sowillitupintheop-ampis,inverse-phaseinput,usingthesetwopotentialdifferencebetweenthecharacteristicsofclosetozero,cangetbettereffect.Inthepictureshowsconditions,theoutputvoltage.图11使用放大器的光敏元件放大电路a)硅光敏二极管放大电路b)硅光电池放大电路Thephotoelectricelementbyfluxtheroleofdifferentmadefromtheprincipleofopticalmeasurementandcontrolsystemisvaried,pressthephotoelectricelement(opticalmeasurementandcontrolsystem)outputnature,namely,canbedividedintosecondanalogphotoelectricsensorandpulse(switch)photoelectricsensor.Analogphotoelectricsensorswillbeconvertedintocontinuousvariationofthemeasure,itismeasuredopticalwitha第9页singlevaluerelationsbetweenanalogphotoelectricsensor.Accordingtobemeasured(objects)methoddetectionoftargetcanbedividedintotransmission(absorption)type,diffusetype,shadingtype(beamresistancegears)threecategories.So-calledtransmissionstylemeanstheobjecttobetestedinopticalpathinconstantlightsource,thelightenergythroughthings,partofbeingmeasuredbyabsorption,transmittedlightontophotoelectricelement,suchasmeasuredliquid,gastransparencyandphotoelectricBiSeJietc;speed.gratifyingTheso-calleddiffusestylemeanstheconstantlightbythelightontotheanalytefromtheobjecttobetested,andprojectedontosurfacesreflectonafteroptoelectronicdevices,suchasphotoelectriccolorimetricthermometerandlightgaugeetc;Theso-calledshadingstylemeansthewhenilluminantissuedbythefluxoflightanalytecoveredbyapartJingoptoelectronics,makeprojectiononthefluxchange,changetheobjecttobetestedandextentofthepositionwiththelightpath,suchasvibrationmeasurement,thesizemeasurement;Andinpulsephotoelectricsensorinthesensors,photoelectricelementacceptableopticalsignalisintermittentchange,thereforephotoelectricelementinswitchworkofthestate,thecurrentoutputitisusuallyonlytwosteadystateofthesignal,thepulseformusedforphotoelectriccountingandphotoelectricspeedmeasurementandsoon.Andinfraredphotoelectricsensorclassificationandworkingwaygenerallyhavethefollowingkinds:1.groovephotoelectricsensorputalightemitterandareceiverinaslotface-to-faceoutfitareonoppositesidesofthephotoelectricgroove.Lighteremitsinfraredlightorvisiblelight,andinunimpededcaseslightreceptorscanreceivelight.Butwhentestedobjectsfromslotzhongtongobsolete,lightoccluded,photoelectricswitchesandaction.Outputaswitchcontrolsignal,cutofforconnectloadcurrent,thuscompletingacontrolmovement.Grooveswitchistheoverallofdetectiondistancebecausegeneralstructurelimitsonlyafewcentimeters.2.DuiShetypeoptoelectronicsensorifyouputlighterandreceivelightisseparated,canmakethedetectiondistanceincrease.ByalighterandaninboxlightsensorintoaphotoelectricswitchiscalledDuiSheseparatephotoelectricswitches,referredtoDuiShephotoelectricswitch.Itsdetectiondistancecanreachafewmetersandevenadozenmeters.Whenusinglight-emittingdeviceandreceivelightdeviceareinstalledintestobjectthroughthepathofthesides,testobjectbyblockinglightpath,acceptlightimplementactionoutputaswitchcontrolsignals.3.reflexplate.itphotoelectricswitchlight-emittingdevicetypeandreceivelightdeviceintothesamedeviceinside,initsfrontpackareflexplate.theusingthereflectionprincipleofcompletephotoelectriccontrolfunctioniscalledreflexplate.itreflex(orreflectorreflex)photoelectricswitch.Undernormalcircumstances,lighterthelightreflectedbyreflexplate.itisreceivedbyacceptlight;Oncethelightpathbetestobje