文献翻译——红外传感器概述

第1页外文文献资料Thesummaryofinfraredsensor1.BriefintroductionUsinginfraredraytomeasurethephysicalpropertiesofthesensor.Infraredisalsoknownasinfraredlight,ithasthereflection,refraction,scattering,interference,suchasabsorptionproperties.Anymatteraslongasititselfhasacertaintemperature(aboveabsolutezero)toinfraredradiation.Infraredsensorisnotindirectcontactwiththeobjecttobetestedsothereisnofrictionandahighsensitivity,fastresponse,etc.Infraredsensorsisusedinnon-contacttemperaturemeasurement,gascompositionanalysisandnondestructiveflawdetectionandwidelyusedinareassuchasthemedical,military,spacetechnologyandenvironmentalengineering.Forexample,thehumanbodysurfacetemperaturemeasurementbyinfraredremotesensorhotlikefigurecanbefoundthatthepartofthetemperatureanomalyfordiseasediagnosisandtreatmentintime(seethethermalimager);Bytakingadvantageofsatelliteinfraredsensorstomonitortheearthclouds,whichcanrealizeawiderangeofweatherforecast;Usinginfraredsensorscandetecttheplanerunningengineoverheating,etc.Telescopewithinfraredsensorcanbeusedformilitaryaction,woodlanddetectenemiesintheforest,citydetectwallatthebackoftheenemyinbattle,aboveallareusingtheinfraredsensortomeasurethebodysurfacetemperaturewhichtheenemyislocated.2.TheprincipleofinfraredsensorWeknowthatanyobjectcanemitelectromagneticradiationwhichcanbemeasuredbyinfraredtemperaturesensor.Whenthetemperatureoftheobjectchanges,thewavelengthoftheradiationofelectromagneticwavechanges,infraredsensorcantransformthewavelengthchangeintothechangeoftemperature,soastorealizethepurposeofmonitoringandmeasuringtemperature.Infraredsensorsincludetheopticalsystem,detectingelement,第2页andconversioncircuit.Opticalsystemaccordingtothedifferentstructurescanbedividedintotwocategories,transmissiontypeandreflectiontype.Detectingelementaccordingtotheprincipleofworkcanbedividedintothermaldetectingelementandphotoelectricdetectingelement.Thermostattemperaturesensorisoneofthemostapplicationsinthermaldetectingelement.Thermostatsareinfraredradiationtemperature,itsresistancechangesandoutputsignalthroughthetransformationcircuitintoelectrical.PhotosensitiveelementisincommonuseinPhotoelectricdetectingelement,whichusuallycomposedofleadsulfide,pose,indiumarsenide,arsenicandantimony,Hecateternaryalloy,germaniumandsilicondopedmaterials.Again,theworkingprincipleofinfraredsensorisnotcomplicated,allpartsofatypicalsensorsystementitiesrespectivelyis:1,Thetargetundertest:Accordingtotheinfraredradiationcharacteristicsofthetargetundertestcanbecarriedoutthesettingoftheinfraredsystem.2,Atmosphericattenuation:Infraredradiationofthetargetundertestgoesthroughearthsatmosphere,becausethegasmoleculesandvariousgasesaswellasavarietyofaerosolparticlescatterandabsorption,itwillmaketheinfraredsourceofinfraredradiationattenuation.3,Opticalreceiver:Itreceivespartoftheinfraredradiationandtransmissiontotheinfraredsensor,theequivalentofradarantenna,whichcommonlyusedisobjective.4,Modulator:Radiationfromtheradiationofthetargetundertestmodulationclinchadealthelightradiation,thetargetazimuthinformationandcanfilterouttheinterferencesignaloflargearea,whichisalsocalledmodulationchopperanddiskandithasmanykindsofstructure.5,Infrareddetector,whichisthecoreoftheinfraredsystem.Itispresentedbyusingtheinfraredradiationandmatterinteractionofthephysicaleffectsoftheinfraredradiationdetectionsensors,inmostcases;itispresentedbyusingtheinteractioneffectofelectricity.Thiskindofdetectorcanbedividedintotwolarge,photondetectorandthermalsensitivedetectortype.6,Detectorsrefrigerator:becausesomedetectormustworkunderlow第3页temperature,thecorrespondingsystemmusthaverefrigerationequipment.Aftercooling;theequipmentcanshortenresponsetimeandimprovethedetectionsensitivity.7,Signalprocessingsystem:Amplifying,filteringdetectthesignalfromwhichextracttheinformation.Thenconvertingtotherequiredformatofsuchinformationandfinallycontrolequipmentordisplay.8,Displayequipment:Thisistheterminalequipmentinfraredequipmentcommonlyuseddisplayoscilloscope,kinescope,infraredphotosensitivematerial,indicatinginstrumentsandrecorders,etc.3.ThecharacteristicsoftheinfraredsensorInfraredsensortransforminfraredpartforhot,outthroughthermalresistancevaluechangesandelectromotiveforceofthetypeofoutputsignal.HotphenomenonisknownascokeThermaleffect;thereisoneofthemostrepresentativesBolometer(ThermalBolometer),Thermopile(Thermopile)andthermoelectric(Hydroelectric)components.Thermaltypeandthegeneralcharacteristicsofquantumtypeasshownintable1,theonlyhottypeofthermoelectricinfraredsensoralsoknownasthehydroelectricinfraredsensor.Typehydroelectricinfraredsensorsystemusesthermoelectriceffect,itsmaterialisusestrongDielectricCeramicbody(DielectricCeramic),suchaslithiumtantalate(LiTaO3)singlecrystalandPVDFandotherorganicmaterials.(1)Becausecheckoutobjectsemitinfrared,youdonthavedirectcontactisabletoperceiveanobjectssurfacetemperature,thedeceasedonexaminationandthetemperatureofthemovingobject,ofcourse,allcanbemeasuredwithnon-contactway.Typehydroelectricinfraredsensorsisissuedbythereceivingobjectdetectorinfrared,thereforeitispassive,becauseisnotactive,itdoesnotneedtocheckforopticaldevicebylightopticalaxisofthetediouswork.(2)Thethermoelectriceffectoftemperaturechange,thiswillbeexplainedinalatersoonlyacceptEnergyduetotemperaturechange,typeandhydroelectricinfraredsensorwilloutputthevoltagedifferential.4.Theapplicationofinfraredsensors第4页Becausenon-contactinfraredtemperaturesensorachievesthefunctionoftemperaturemeasurement,distancemeasurementsuchashightemperatureandhashighsensitivity,ithasbeenwidelyusedinvariousindustries.1,NightvisiontechnologyUsinginfraredsensorsfornightvisionfunctioninthecamera.Infrarednightvision,itisintheconditionofnightvision,digitalcameraemitsinvisibleinfraredlighttoilluminateobjectsphotographedandturnofftheinfraredfilter,itnolongerstopstheinfraredintoCCD,infraredimagesafterobjectreflectedintothecamera.Thenwhatweseeisbyinfraredreflectionintoimagesratherthanvisiblelightreflectionintotheimage,whichcanbetakenatthistimetotheimage,isinvisibletothenakedeyeindarkenvironment.Thesetechniquesbothinmilitaryandcivilianhavewidespreadapplication.2,theinfrareddetectorInfraredsystemisthecoreofinfrareddetector;mechanismisdifferentaccordingtothedetection,whichcanbedividedintotwomajorcategoriesofheatdetectorandphotondetector.Belowtakeheatdetectorforanexampletoanalyzetheprincipleofthedetector.Heatdetectorisusingtheradiantheateffect,afterreceivingtheradiantenergydetectionelement;itcausestemperaturetorise,whichdependsontheperformanceofthetemperaturechanginginthedetector.Testingtheperformanceofonechangecandetectradiation.Inmostcases,itistodetectradiationthroughthermalpowerchange.Whencomponentsreceiveradiationcausingthenon-electricityphysicalchangescanchangeafterthetransformationthroughthepropermeasurementofthecorrespondingpower.3,InfraredNDTInfrarednondestructiveflawdetectorcanbeusedtocheckparts,partsstructurewithoutanydamage.Forexample,checktheweldingqualityoftwopiecesofmetalplate,usinginfraredradiationdetectorisveryconvenienttochecktheleakageweldingorlackofwelding;totesttheinternalcracksofmetalmaterialscanalsouseinfrareddetector.Theinfraredradiationuniformsirradiationofmetalplate,usingmetalfortheabsorptionofinfraredradiationandaperture(containsomegasor第5页vacuum)ontheabsorptionofinfraredradiationofdifferencescandetectmetalfracturevoids.Whentheinfraredradiationscannercontinuousfiringacertainwavelengthofinfraredlightthroughthemetalplate,themetalplateontheothersideoftheinfraredreceiveralsoreceivedafteraconsecutivemetalplateattenuationofinfraredlight;Ifthemetalplateiswithoutfractureinside,whenradiationscannerisinthescanningprocess,infraredreceiverreceivedthesameamountofinfraredradiation;Ifthemetalplatewithinthefracture,theinfraredreceiverinradiationscannerscanstosplitinreceivestheinfraredradiationvalueswhichdonotagreewithotherplacesandusingthetechnologyofimageintheform,youcanshowtheshapeofinternaldefectsinmetalplate.Infraredsensorplaysamoreandmoreimportantroleinthefieldofscienceandtechnology,industrialandagriculturalproductionanddailylife.Infraredradiationtechnologyinrecent40yearshasdevelopedintoanemergingtechnologyscience.Itisinawiderangeofapplications,especiallyplaysanextremelyimportantroleinscientificresearch,militaryengineering,andmedicine.Forexample,ininfraredguidedrockets,infraredimaging,infraredremotesensing,etc.Andtheimportanttoolofinfraredradiationtechnologyistheinfraredsensorswhichhaveplayedalargeroleinthemodernproductionpractices.Especiallyinthewayinrealizingremotetemperaturemonitoringandcontrol,infraredtemperaturesensorwithitssuperiorperformancecanmeetthevariousrequirementsandthusplayaprominentroleintheproductsensorsothedevelopmentprospectsofinfraredsensorisimmeasurable.Infrareddetectorapplicationcanbeusedforcontactlesstemperaturemeasurement,gascompositionanalysis,nondestructiveflawdetection,thermaltesting,infraredremotesensingandmilitarytargetreconnaissanceandcommunication,searchandtracking,etcThesample第6页Thealarmcandetecttheinfraredrayfromhumanbody,whenpeopleenterthealarmmonitoringarea,itcansendoutalarm,suitableforfamily,office,warehouse,anti-theftalarm,laboratoryandotherimportantoccasions.Thecircuitprincipleasshowninfigure1whichcomposedoftheinfraredsensors,signalamplificationcircuit,voltagecomparator,timedelaycircuitandsoundalarmcircuit,etc.IC1infraredsensorsdetectthefronthumanradiationofinfraredsignal,(2)feetweakelectricalsignaloutputbyIC1amplifiedbyamplifyingcircuitisthefirststeponthetransistorVT1,etc,TheninputintotheoperationalamplifierIC2gethighgainthroughtheC2,lownoiseamplifier,atthistimebytheIC2(1)feetoftheoutputsignalisstrongenough.TheIC3servesasvoltagecomparator,itisbythefirst5feetR10,VD1provideareferencevoltage,whentheIC2(1)feetoftheoutputsignalvoltagereachedtheIC36feet,comparestwoinputvoltageatthispointtheIC37feetfromhighleveltolowlevel.IC4foralarmdelaycircuit,R14andC6delaycircuit,thetimeisabout1minute.WhentheIC37feetintolowelectricityatordinarytimes,C6throughVD2discharge,IC4(2)feetcomeintoalowlevelatthistime,itcomparedwithIC4(3)feetbenchmarkvoltage,whenitislowerthanthereferencevoltage,IC41footintoahighlevelofVT2conductionacousticBLelectricalarm.Humanbodyinfraredsignaldisappears,theIC37feetbackhighleveloutput,VD2globeatthistime.BecauseC6onbothendsofthevoltagecannotbemutation,slowchargethroughtheR14C6,whenthevoltageishigherthanthereference第7页voltageattheendsoftheC6,IC41foottoalowlevelforabout1minute,thealarmfor1minute.5.ThedevelopmentprospectsofinfraredsensorInrecentyears,theinfraredsensoristowardminiaturization,highprecision,highreliability,lowpowerconsumption,intelligent,digitaldevelopment.Thisnotonlypromotesthetransformationoftraditionalindustries,butalsocanleadtonewindustry,itisaneweconomicgrowthpointinthe21stcentury.Infrareddetectorapplicationcanbeusedforcontactlesstemperaturemeasurement,gascompositionanalysis,nondestructiveflawdetection,thermaltesting,infraredremotesensingandthegoalofmilitaryreconnaissance,search,trackandcommunication,etc.Infraredsensorapplicationprospectwiththedevelopmentofmodernscienceandtechnologywillbebroader;itsdevelopmenttrendisasfollows:Development:1,tothehighreliabilityofinfraredsensordirectlyaffectthereliabilityofelectronicequipmentofanti-jammingperformance,highreliabilityofthedirectionoftheinfraredsensorwillbepermanent.Inmedicine,bodytemperaturetesting,infraredsensorisusedformeasuringthequicknessofbutlimitedtoitsaccuracyisnothighbutcannotreplacetheexistingtemperaturemeasuringmethod.Asaresult,highsensitivityandhighinfraredsensoristheinevitabletrendofitsfuturedevelopment2,Tothedevelopmentofmicropowerconsumptionandpassive:infraredsensorisgenerallyelectricitytopowerconversionwithoutpoweratwork,atthesceneofthefieldorawayfromthepowergridisoftenusebatteriesorusethesolarenergypowersupply,suchasthedevelopmentofmicrosensorandthepowerconsumptionofthepassivesensoristheinevitabledevelopmentdirectionsothatitbothcansaveenergyandcanimprovesystemlifetime.Atpresent,thelowpowerconsumptionchipdevelopmentquickly,suchasT12702operationalamplifier,staticpowerconsumptionofonly1.5(includingA,andonly25vworkingvoltage).3,Tointelligent,digitaldevelopment:withthedevelopmentofmodernization,thefunctionofinfraredsensorhasbreakthroughthetraditionalfunctions,itsoutputisnolongerasingleanalogsignals(such第8页as010mV),butafterbeenthroughmicrocomputerprocessingofdigitalsignals,someevenwithacontrolfunction,whichiscalleddigitalsensors.Thecurrentmaincombinedwithperipheraldevicesuseinfraredsensorandthebuilt-inmicroprocessorcanachieveatwo-waycommunicationinthesensorandthecontrolunithastheminiaturization,digitalcommunication.Simplemaintenanceandotheradvantagesmakeitcanseparateworkindependentlyasamodule.4,Totheminiaturizationdevelopment:sensorminiaturizationisaninevitabletrend.Now,duetothevolumeoftheinfraredsensorproblem,itcauseitsusedegreetobemuchlessthanthethermoelectriccorner,theminiaturizationportableinfraredsensorornotonitsfuturedevelopmentcannotbeignored.Althoughtherearemanyshortcomingsintheinfraredsensoratthisstage,theinfraredsensorhasbeenplayingahugeroleintheproductionpracticeofmodernization,withtheimprovementofdetectionequipmentandotherpartsofthetechnology,theperformanceoftheinfraredsensorhavemoreandbettersensitivitywhichwillalsohaveawiderrangeofapplication.Accordingtotheaboverequirements,withthedevelopmentofmicroelectronicstechnologyandsensorapplicationdomaininfraredsensorexpandsunceasinglyfromasingleelement,asinglefunctiontodevelopinthedirectionofintegration,multifunctionality.Inaddition,duetothedoublecolorandmulti-colordetectorhasgoodanti-interferenceabilitythatcanobtainaccurateandreliabletargetinformation,thisdetectormaybeinthefuturewillbemorearousedpeoplesconcern.Infraredsensoralsotendstobeimprovementsontheoriginaldetector,thedevelopmentofproductionmaterials,aswellastothedevelopmentofthehighdensityofinfraredfocalplanearrays.Webelievethattheprospectsofthedevelopmentofinfraredsensorwillbemorebroad,moreandmorekindsofinfraredsensorinthedevelopmentofscience.6.developmenttrendofMCUSincelate90sthedevelopmentofthesinglechipmicrocomputercanbesaidtoenterinanewstage,thesinglechipmicrocomputerisdevelopinginthedirectionofhighperformanceandmanyvarieties,thedevelopmenttrend第9页willbefurthertowardsuchaspectssuchasCMOS,lowpowerconsumption,smallvolume,largecapacity,highperformance,lowpriceandperipheralcircuitsdevelopment.Thedevelopmenttrendofbasicallyhasthefollowingseveralaspects:1,CMOS:inrecentyears,becauseofCHMOStechnologyprogress,itgreatlypromotedthesingle-chipCMOS.Inadditiontolowpowerconsumptioncharacteristics,CMOSchipalsohasthecontrollability,thepowerconsumptionofthefinemanagementbasedontheMCUcanworkinpowerconsumptionstate.SincemostMCUchipistouseCMOS(metalgateoxide)semiconductorprocess,thisisalsobasedon80c51toreplacethe8051MCUchipinthefuture.CMOScircuitischaracterizedbylowpowerconsumption,highdensity,lowspeedandlowprice.UsingbipolarsemiconductortechnologyofTTLcircuitspeedbutthepowerconsumptionandchipareaislarger.Withtheimprovementoftechnologyandcraftlevel,thereistheHMOS(highdensity,highspeedMOS)andCHMOSprocess,combinationofCMOSandHMOSprocess.CurrentproductionhavereachedspeedsoverLSTTLCHMOScircuit,transmissiondelaytimeislessthan2ns,itscomprehensiveadvantageshaveliesinTTLcircuit.Therefore,CMOSisgraduallyreplacingTTLcircuitinthefieldofsinglechip.2,Lowpowerconsumption,powerconsumptionofthemicrocontrollerhasreachtomA,evenlessthan1uA.Usingthevoltagebetween36v,itadaptstothebattery.Theeffectoflowpowerconsumptionisnotonlyalowpowerconsumption,butbringstheproductsofhighreliability,highanti-interferenceability,andportable,lowvoltageproducts.AlmostallofthesinglechipmicrocomputerisWAIT,STOPoperationmodetosavepowerthatallowstheuseofmoreandmorewidevoltagerange,generallywithin36v.Lowvoltagepowersupplyofthesinglechipmicrocomputerpowerlimithasupto12v.0.8Vpowersupplyofsinglechipmicrocomputerhasbeenavailableatpresent.LownoiseandhighreliabilityinordertoimprovetheabilitytoresistelectromagneticinterferenceMCUthatmakesourproductscanadapttobadworkingenvironmentandmeettherequirementsofelectromagneticcompatibilityandhigherstandard,thesingle-chipcomputermanufacturerin第10页thecircuitinsidethesinglechipmicrocomputerisadoptednewtechnologymeasures.3,Largecapacity,thetraditionalsinglechipmicrocomputerchipprogrammemoryisusually18k,kpieceofdatawithinthememoryof256bytes.Ontheapplicationofsomecomplex,onchipbothprogrammemoryanddatamemorycapacityisnotenough,whichmustuseanexternalextendedthroughthewayandnewtypemicrocontroller(suchasPHILIPSP89C66x)onchipprogramstorageofupto64k,slicedatastoragecanbeupto8k.Inthefuture,withthecontinuousdevelopmentoftechnology,thesingle-chipmicrocomputerchipstoragecapacitywillbefurtherexpanded.4,High-performancemicrocontroller:ItmainlyreferstofurtherimprovetheperformanceofCPU,speeduptheorderoperationandstrengthenthefunctionofaprocess,interrupt,andtimingfunction.Itsmainfrequencyfrom4MHZto012MHZMHZ(static)all40MHZ.UsingpipeliningstructureatthesametimemakestheinstructionsintheformofqueueappearedintheCPU,thusfurtherimprovethecomputingspeed.SomebasicadoptedMCUassemblylinestructure,thiskindofsinglechipmicrocomputerspeedismorethan10timeshigherthanthatofsinglechipmicrocomputer.5,withintheperipheralcircuit,whichisamajoraspectofMCUdevelopment.Withtheconstantimprovementofthelevelofintegration,theintegrationofvariousfunctionaldeviceswithinthepieceispossible.InadditiontogeneralmusthaveaCPU,ROM,RAM,timer,counterthereofonchipcanalsoaccordingtotheneedtointegratesuchasserialport,AD,DA,EEPROM,PWM,Watch-Dog(Watch-Dog),liquidcrystaldisplay(LCD)driveandotherfeatures.6,StrengthenthefunctionofI/Oport:inordertoreducetheexternaldrivechip,furtherincreasethesingle-chipcomputerparallelportdriverability,nowsomesinglechipcanbedirectlyoutput(20ma)andhighvoltagelargecurrenttodirectdrivedisplay.InordertofurtheracceleratethespeedofIO,somesetupahigh-speedmicrocontrollerIOportwhichcantakethefastestspeedtocapturethechangeoftheexternaldata,atthesametimeoutputdatawiththefastestspeed.Inordertosuitthenumberaccordingtothechangeofcircumstance.Withthecontinuousdevelopmentoftheintegrationprocess,thesinglechip第11页microcomputerontheonehand,toadirectionofmor