半导体工艺PhotoPPT课件

IC工艺技术系列讲座第二讲 PHOTOLITHOGRAPHY光刻 讲座提要 1 General2 Facility 动力环境 3 Mask 掩膜版 4 Processstephighlight 光刻工艺概述 5 BCD正胶工艺6 Historyand未来的光刻工艺 1 General MASKINGProcess 光刻工艺 Photolithography 光学光刻 Transferatemporarypattern resist DefectcontrolCriticaldimensioncontrolAlignmentaccuracyCrosssectionprofileEtch 腐蚀 Transferapermanentpattern Oxide Nitride Metal 2 0Facilityrequirement Temperature 温度 70oFHumidity 湿度 45 Positivepressure 正压 0 02in H2OParticlecontrol 微粒 Class100Vibration 震动 Yellowlightenvironment 黄光区 DIwater 去离子水 17mhomCompressairandNitrogen 加压空气 氮气 Inhousevacuum 真空管道 3 0Mask 掩膜版 DesignPGtapeMaskmakingPlate quartz LEglass SodalineglassCoating Chrome Ionoxide EmulsionEquipment E beam PatterngeneratorMaskstorage AntistaticBox Pellicle Pellicleprotection 4 0光刻工艺概述 PrebakeandHMDS 前烘 Resistcoating 涂胶 EBR 去胶边 softbake 3 Exposure 曝光 Alignment 校正 4 Develop 显影 Poste bake Hardbake backsiderinse5 Developinspection 显检 4 1PrebakeandHMDStreatment PurposeofPre bakeandHMDStreatmentistoimprovetheresistadhesiononoxidewafer HMDSisadhesionpromoterespeciallydesignedforpositiveresist HMDS Hexamethyldisilane canbeappliedonthewafersby1 Vaporinabucket2 vaporinavacuumbox3 Directlydispenseonwafer4 YESsystem inahotvacuumsystem5 Vaporinahotplate withexhaust ToomuchHMDSwillcausepoorspin viceversawillcauseresistlifting 4 2ResistCoating 涂胶 Resistcoatingspecification 指标 Thickness 厚度 0 7u 2 0u 3 0以上forPadlayer Uniformity 均匀度 50A 200ASizeofEBR 去胶边尺寸 Particle 颗粒 20perwaferBacksidecontamination 背后污染 三个主要因数影响涂胶的结果ResistProduct 产品 Viscosity 粘度 SpinnerDispensemethod 涂胶方法 Spinnerspeed RPM 转速 Exhaust 排气 Softbaketemperature 烘温 FacilityTemperature 室温 Humility 湿度 4 2 1Coater 涂胶机 EquipmentmoduleandspecialfeaturePre bakeandHMDS Hot ColdplateResistdispense ResistpumpRPMaccuracy MotorEBR Top bottomHotplate softbaketemperatureaccuracyExhaustWastecollectionTemperature HumiditycontrolhoodTransfersystem ParticleandreliabilityProcessstepandprocessprogram Flexible SVG8800 升降机 涂胶 HMDS 热板 冷板 升降机 升降机 升降机 涂胶 热板 热板 升降机 升降机 升降机 升降机 涂胶 热板 冷板 HMDS 冷板 冷板 冷板 涂胶 热板 热板 升降机 升降机 显影 热板 热板 热板 冷板 4 2 2Coater 涂胶机 combination 4 2 3Coater 涂胶机 ResistdispensemethodsStaticDynamicRadialReverseradialResistpump Volumecontrol 2cc waferanddripping Barrelpump TritekDiaphragmpump MilliporeN2pressurecontrolpump IDLStepmotorcontrolpump Cybotsizeofdispensehead 4 2 4Coater 涂胶机 rpm 转速 andacceleration 加速 Maximumspeed Upto10000rpmStability daytodayAcceleration controllablenumberofstepsReliability timetoreplacementEBR Edgebeadremoval 清边 Method TopEBRorBottomEBRorTopandbottomEBRProblem DrippingChemical Acetone EGMEA PGMEA ETHLY LACTATE ResistType NegativeresistPositiveresistG linei linereverseimageTAC topanti reflectivecoatingBARLI bottomanti reflectivecoatingChemicalamplificationresistXrayresist 4 3 1Exposure 曝光 Transferapatternfromthemask reticle toresistGoal1 CriticalDimensioncontrol CD 条宽2 Alignment校准 Mis alignment runin out3 Patterndistortion图样变形 Astigmatism4 Crosssectionprofile侧面形貌 sidewallangle5 Defectfree无缺陷Equipment mask resistselection1 Resolution分辨率 Exposecharacter Lightsource wavelength N A 2 Auto alignmentskill自动校准技术 Lightfield darkfield laser3 Mask掩膜版 e beammaster sub master spotsize quartzplate defectdensity CDrequirement4 Resistselection胶选择 4 3 2Exposure 曝光 AlignerTechnology1 Contactprint 接触 Softcontact hardcontact proximity2 Scanner 扫描 3 Stepper 重复 1X 2X 4X 5X 10X4 Step Scan 重复扫描 4X reticlemove wafermove reticle wafermove5 Xray X光 1 16 E beam 电子束 Directwrite 4 3 3Exposure 曝光 Contactprint 接触 1 Mostofusefornegativeresistprocess for5uprocessandcanbepushto3u 2 Positiveresistcanprintsmallerthan3u anddeepUVcanpushto1u butveryhighdefect3 Equipment CanonPLA501 Cobilt Kasper K S Contactprint Canon501 4 3 4Exposure 曝光 Scanner 扫描 1 MostofuseforG linePositiveresistprocess for3uprocessandcanbepushto2u 2 Negativeresistcanprintsmallerthan4u3 Equipment CanonMPA500 600 PerkinElmer100 200 300 600 700 900 PE240Scanner Canon600Scanner 4 3 5Exposure 曝光 Stepper 重复 1 Glinepositiveresist for 0 8uprocess2 ilinepositiveresist 0 5uprocess3 ilineresistplusphase shiftmask canbepushedto0 354 deepUVresistprocess 0 35uandbelow5 Equipment Ultratech Canon Nikon ASML 4 3 6Exposure 曝光 6 ASMLStepperlistModelWavelengthResolutionASML2500g0 8ASML5000ASML5500 20 22 25 60 60B 80 80Bi0 55ASML5500 100 100C 100D 150i0 45ASML5000 200 200B 250 250BUV0 35ASML5500 300 300B C D TFHUV0 25ASML5500 900Step ScanUV 4 4 1Develop 显影 Developprocess1 Postexposebake2 ResistDevelop3 DIwaterrinse4 HardBakeDevelopequipment1 Batchdevelop2 TrackdevelopDevelopchemical1 KOH2 Metalfree TMAH Tetramethylamoniahydroxide3 Wettingagent with without4 Concentration 2 38 TMAHTrackdevelopmethod1 Spray2 Steam3 Signal Paddle4 Double Paddle 4 4 2Develop 显影 DevelopTrack1 TemperaturecontrolwaterjacketforDevelopline2 Developpump developpressurecanister3 Exhaust4 Hotplatetemperaturecontrol5 Pre wet processprogram 4 4 3Develop 显影 CDcontrolindeveloping1 Postbakeprocess2 DevelopTime3 Concentrationofdeveloperchemical Higherfast 4 Developertemperature lowerfaster 1oC 0 1u 5 Developrecipe pre wet paddle rotation6 Ageofthedevelopchemical7 Rinse DIwaterpressure8 Hardbaketemperature 4 5 1DevelopInspection Toolforinspection1 MicroscopeManuallyloadingAutomaticloading2 UVlampManuallyloadingAutomaticloading3 CDmeasurementequipmentManuallymeasuringsystem Vicker Automaticmeasuringsystem NanolineCDSEM 4 5 2DevelopInspection Inspectionitems1 Layername2 Alignment3 Runin out4 Patterndistortion5 Patternintegrity6 Defectslifting particle discoloration scumming bridging excessresist scratch7 CD criticaldimension Nanoline forCDmeasurement Hitachi8860 CDSEM LeitzMicroscopeinspectstation AutoloadUVinspectionsystem 5 0BCD正胶工艺 EquipmentSSI SVG8800 SVG90Processsteppre bake HMDS coldplatespin 5000rpm dynamicdispense top bottom sideEBR 2mm softbake 100oC cold palteResist specShipley6112 1 2u 1818 1 8u1stmetal 6818 2 4u2ndmetal 6118 2 9uPad 6124 3 6u 4 5uST Everlight533 1 2 Uniformity 300A Resistcoating 升降机 冷板 HMDS 涂胶 热板 冷板 升降机 SVG90 SVG8800 5 1 1PositiveResist 正胶 Component 成分 Resin 树脂 Diazonaphthoquinone DNQ novolakPhoto sensitizer 感光剂 Solvent 溶剂 Dye 染料 Manufacturing 制造商 Kodak Hunt Ashchemical USA TOK Japan JSR Japan Shipley USA AZ USA Germany Sumitomo Japan Everlight Taiwan 5 1 2PositiveResist 正胶 ProductNameandfeature 产品称与特性 以everlight 永光 正胶为例ProductSeriesEPG510SeriesExposewavelengthG Line 435nm ThicknessName2000rpm5000rpmViscosity 粘度 EPG510 12cp1 25u0 80uEPG512 21 5cp2 00u1 25uEPG516 50cp3 25u2 00uEPG518 105cp4 50u2 75uEPG519 460cp9 00u5 5uResolution 分辨率 0 8u 0 55u thesmallest DepthofFocus 聚焦深度 1 4u 1 0uline space Sensitivity 感光度 Eth 60mj cm2Eop 90mj cm2 5 1 4PositiveResist 正胶 Selectapositiveresist1 Resolution 分辨率 2 Resistthickness Spincurve 厚度 3 Photospeed 曝光速度 4 Exposelatitude 曝光宽容度 5 Adhesion 粘附性 6 Reflectivenotch 反射缺口 6 Metalliccontent 金属含量 7 Thermalstability 热稳定性 8 Plasmaresistance 抗腐蚀能力 9 Howeasytoberemoved 清除能力 10 Price 價格 5 2Expose EquipmentUltratechstepper1100 6 Ultratechstepper1500 6 Canon600 6 PerkinElmer240 4 PositiveResistreactionduringexpose PositiveResistreactionduringexpose 5 2 1UltratechStepper UltratechstepperG lineN A 0 24and0 311 1printratio3X5inchreticle 3 4 5 7field4udepthoffocusBlindstepcanbepushto 5u nospec Centerofarray 50uDarkfieldalignmentSitebySitealignmentAlignmenttarget oat 4mmX4mm K T 200uX200u UltratechStepper1100 UltratechStepper1500 1700 5 2 2Ultratchstepperspecification UTS ReticleandJobfile Guide Fiducials UTS primarylens UTSAlignmentOptic Ulratechsteppersitebysitealignment UTalignmentprocedure LoadjobfileintocomputerLoadreticleStart iducialsalignment Guide rotation 1500 OATalignmentOATsize 4mmX4mmFastandslowscan1000uSidebysidealignmentKeyandtargetsize200uX200ushotscan20ulongscan100u 80u Auto focusGobleorlocalFailurealignmentSkipExposeZmode 5 3PerkinElmeraligner MicalignPE100MicalignPE200 220 240MicalignPE300 340 340HTMicalignPE500MicalignPE600MicalignPE700MicalignPE900Micscan100Micscan200Micscan300Micscan400 PE240Specification PE240 PE240 PMCenterofcurvatureParallelismLightintensityFocusDistortionMask wafercenteringViewopticHPCrebuildCoolingairflowrateVibrationfromHPC FacilityVibrationfromenvironmentTemperaturecontrolhoodProcessReferencewaferApertureselectionResistbuilduponXYOpinsRoofmirrorcleaningMaskheatupduringexpose PE Focuswedgemask PE distortion PE Projectionoptic PEMercurylamp PE Adjustableslit PEalignmentprocedure SetscanLoadmaskLoadwaferSwitchtomaskUsemicroscopeandcarriagemovementtofindthealignmentmarkonmask Testdie MovemaskonlytoalignthewaferSwitchtowaferMovewaferaligntomask 5 4 1Resistdevelop EquipmentSSI SVG8800 SVG90Processsteppose ebake coldplatedevelop doublepaddle DIwaterrinse backN2 rinsehardbake 110 130oC cold palteDeveloperTMAH2 35 升降机 冷板 热板 冷板 升降机 热板 显影 SVG8800 SVG90 5 4 2Resistdevelop EquipmentDevelopsinkEquipmentsetupTemperatureN2blanketFiltersizeFilterchangeDeveloperTMAH2 38 DevelopchangeProcessstepbatchdevelop immerse 1 15 QDRDIwaterrinse 8cycles hardbake 110 130oC cold palte 6 Historyand未来的光刻工艺 Willimprinttechnologyreplacephotolithography In1798 imagewastransferredbystoneplate1940 BellLabusedresistdevelopedbyEastmanKodak1960 SanFranciscobayareabecomesthesiliconvalley AT T Raytheon Fairchild Negativeresist contactprintprocesswildlywasused Endof1970 earlyof1980 positiveresist Projectionprint PerkinElmerMicalign startedtobeusedinproduction Bayareabecamecloudy National IntelandAMD OutsidebayareahadMotolora TI IBM From1970toearly2000 thetechnologyofsemiconductorisdevelopedveryfast Thesmallestfeaturesizefrom10ureducedto0 09u 0 25uand0 35uproductswererunningmassproductioneverywhere USA Europe Japan Taiwan Korea i line anddeepUV 5Xstepperandstep scan 4X alignerbecamethemajortools Now 0 09utechnologybecomemature 0 065u 0 045uand0 035utechnologyarebeingdeveloped Immersionlithographyandimprinttechnologywillbeusedtoprintthesenanofeature Imprinttechnologyclaimsthatitisabletoprint0 01u 10nm Itmaybethefuturemasking 6 1History Lithography asusedinthemanufactureoftheintegratedcircuit istheprocessoftransferringgeometricshapesonamasktothesurfaceofasiliconwafer Theseshapesmakeupthepartsofthecircuit suchasgateelectrodes contactwindows metalinterconnections andsoon Althoughmostlithographytechniquesusedtodayweredevelopedinthepast40years theprocesswasactuallyinventedin1798 inthisfirstprocess thepattern orimage wastransferredfromastoneplate thewordlithocomesfrom Thefirstpracticaltwodimensionaldevicepatterningonasiliconwaferwasactuallycarriedoutinthelate1940sattheBellLab Atthattime polyvinylcinnamate developedbyEastmanKodak wasusedasaresist However deviceyieldswerelowbecauseofthepooradhesionofthepolyvinylcinnamatetothesiliconandoxidesurface TheKodakchemiststhenturnedtoasyntheticrubberbasedmaterial apartiallycyclizedisopreneandaddedaUVactivesensitizer abis aryl azideintoittocrosslinktherubbermatrixandcreatedanewclassofphotoresistmaterial Sincetheunexposedareaofthenewmaterialwastheonlypartofthepolymermatrixthatwilldissolveinanorganicsolventandyieldinganegativeimageofthemaskplate therefore thenewmaterialwasthenreferredasthenegativeresist Thecyclizedrubber bisazideresistwaswidelyusedinthecontactprintingage However thecontactmodeofprintingcreatedseverewearofthemaskplateandthedefectdensityofthephotomaskandthewaferwasveryhigh Theindustrythereforedecidedtoswitchtocontactlessprojectionprintingin1972forproducingthe16kDRAM Projectionprinting however wascarriedoutintheFraunhofferorthesocalledfarfielddiffractionregionandtheaerialimagewasmuchpoorerthanthecontactorproximitymethodofprinting Inordertopreservethesamequalityofimagestructure thecontrastoftheimagematerialmustbeincreased Lithographiclorehasitthatthediazonaphthoquinone novolakresist thetermnovolakisderivedfromtheSwedishwordlak meaninglacquerorresinandprefixedbytheLatinwordnovo meaningnew madetheirwayfromtheblueprintpaperindustrytothemicroelectronicthroughfamilyties atthattimes theofficesofAzoplate theAmericanoutletforKalleprintingplate waslocatedatMurrayHill NJ justacrossthestreetfromthefamousBellLabs ThefatherofatechnicianatAzoplateworkedasatechnicianatBellLabs ApparentlythefatherhadcomplainedonedayaboutthepoorresolutionqualityofthesolventdevelopedresistsystemusedattheBellLabsandthesonhadboastedthepropertiesoftheAzoplateDNQ novolakmaterial anyway onedaythefathertookabottleofthematerialwithhimtotheBellLabs andtheageoftheDNQ novolakresistbegan ThenewmaterialwasmarketedbyAzoplateunderthetradenameofAZphotoresist Itwasalwaysreferredasthepositiveresistforapositivetoneofimagewouldbereproducedbythenewmaterial TheuseofDNQ novolaksystemincreasedrapidlyaftertheintroductionoftheprojectionlithography By1980s theDNQresisthadcompletelysupplantedtheoldnegativeresistastheworkhorseofthesemiconductorindustryinthehigh endapplications TheDNQ novolakresisthasheldswayfor6devicegenerations fromtheintroductionofthe16KDRAMtothelargescaleproductionofthe64MDRAMin1994to1995 Thesuccessofsuchmaterialwastheindicativeofitsupremeperformanceandpotential Today itappearsthatitisnotreallytheresolutionwhichdefinesthelimitoftheDNQ novolakresistapplication butratherthelossinthedepthoffocuswiththeeverincreasingNAofthestepper DeepUVandchemicalamplificationnegativetoneresistslowlyerodethemarketplaceoftheDNQ novolakresist Bytheendofthe1990s theDNQ novolakresistwasnolongerbeusedinthetechnologicallymostadvancedapplications theprintingofthecriticallevelsofthe256MDRAM 6 2Future IntroductionofnanoimprinttechnologyFabricatingmicrostructuresandnanostructureisimportantinmanyfieldsofscienceandtechnology includingelectronics datastorage flexibledisplays microelectromechanicalsystems microfluidics photonicsandbiosensors Traditionally opticalorelectronbeamlithographysystemsareusedtoprinttherelevantstructures However newprintingmethodssuchasimprintlithographyandsoftlithographyhaverecentlybeenexploredinsomedetailtolowerthecostsoffabricatinglowvolumesofstructureswithverysmallfeaturesandtoincreasetherangeofprintingapplication Thesoftlithographyschemes ingeneral useasofttemplatepatternmadeofsiliconeelastomer polydimethylsiloxane PDMS whichisplacedintocontactwiththesubstrateinavarietyofways topatternasurfacefilm totransferamaterial orfordirectintegrationintothefinalpart witharangeofinnovativeapplications ChallengesinthisareaaregenerallyconcernedwiththeinherentlimitationsofthePDMSmaterialincludingresolutionlimitationswhencuringduetodifferencesinthermalexpansionbetweenthemasterandmold adhesiontocommonmastermaterialslikesilicon significanttime aboutanhour tofabricateamold elasticityofthemold whichmayimpactmultilevelalignment insolubilitywithcommonsolvents contaminationissuesandincompatibilitywit