EBL基本组成及工作原理ppt课件

.,1,宋晨之20150202,EBL基本结构与工作原理,.,2,EBL=ElectronBeamLithography=电子束光刻,.,3,.,4,一、电子束曝光系统结构,.,5,.,6,column,.,7,电子源的分类,直热式W，2700K热发射电子源旁热式LaB6，1800K电子源热场发射ZrO/W，1800K场发射电子源冷场发射,.,8,四种电子源对比,电子源三个关键参数：有效源尺寸，亮度，电子能量分布热发射源能量分布大，聚焦斑束大，产生严重相差。冷场致发射稳定性差，对真空要求高。故EBL系统选用热场致发射源。,.,9,旁热式&热场致电子源结构示意图,阳,地,超高电场,阴,阴,阳,.,10,EBL中电子源结构示意图,.,11,几个牌子的EBL性能参数,.,12,二次电子探测器,Detector,.,13,Illustrationswithdifferentsignalsources,.,14,.,15,ImagingbymeansofSE2detector:5mmWDImagingbymeansofInlensdetector:=10mmWD(dependingonhighvoltagesetting)ImagingbymeansofBSEdetector:8-10mm(OptimumoftheBSelectrondetection),.,16,InfluenceofAccelerationVoltage,.,17,InfluenceofBeamCurrent,.,18,InfluenceofWorkingDistance,.,19,二、坐标系的对准,.,20,建立坐标系,.,21,写场对准,.,22,三、曝光,.,23,扫描模式,.,24,Exposureparameter,.,25,Areadose,.,26,Linedose,.,27,Dotdoes,.,28,Areamode,.,29,.,30,Linemode,.,31,Circlemode,.,32,ExposurestrategiesUsedbyRaith,.,33,四、临近效应,.,34,VisualizationofEnergyDepositionGrid(EDG),.,35,高能电子打断PMMA内高分子链示意图,.,36,前散射和背散射随PMMA厚度的变化关系,.,37,MonteCarloSimulations,.,38,Energydeposition,.,39,Proximityfunction,trajectories,energydeposition,energydistribution,doubleGaussian,Proximityfunction,proximityfunctionhasthesameshapeasenergydistributionwithrespecttolateraldistancesbut:nodirectrelationbetweenenergyandPE!(itsjustamodel),.,40,