STI工艺等ppt课件

以下是以前工作留下的STI相关学习资料，整理了一下，仅供参考。你们在那家代工厂开发，得和具体工程师讨论。我很多年不做辐照效应了，也没查看相关资料，这方面你们是专家。我仅谈谈一些观点供参考。,1,STI技术,STI工艺步骤STI对器件和隔离影响电离辐照效应看法,2,WhySTI？,Technology:0.35umCMOS-0.25umCMOSIsolation:LOCOS-STILOCOSdrawback:1.Birdsbeak;2.poor-planarity;3.FieldoxidethinnerasICscaling-down;4.NWE;5.Stress-induceddefects.,3,STI主要工艺步骤,大部分代工厂用紫色框的步骤。下面给出形貌模拟示意图。,4,Padoxide110ASiN1600ASTIdepth0.4um,STI蚀刻形状极为重要，下面会提到。,5,lineroxide(trenchliner):200A1000CdryO2有些用SiO2/SiN复合层。,trenchoxide:主要用HDPCVDoxide有些用APCVDoxide，但是用于制作CIS。优点是应力小、缺陷少、漏电流低。,6,CMP后。有些加Oxide干刻蚀，目的为了整个硅片STIoxide高度一致。,腐蚀SiN,7,阱注入、清洗等、栅氧化前。,divot,栅氧化和多晶硅后。,8,Goodgapfill,Smallbirdsbeak,Topcornerroundingradius,Sidewallslope(7085o),Smalloxiderecess(divot),Bottomcornerrounding，Lessmicro-loadingeffect.,STI形状要求,9,STI技术,STI工艺步骤STI对器件和隔离影响电离辐照效应看法,10,Intra-wellIsolation(STIIsolation),特性表征:Vt,Vpt,Leakage.,寄生NMOSFET在PW内。寄生PMOSFET在NW内。,影响STI隔离的主要因素：STI蚀刻、深度和STIlineroxide质量(lessQf,Dit)等.STI附近的掺杂分布。N+和N+，P+和P+间距。,11,Inter-wellIsolation(wellIsolation),寄生N+toNWMOSFET,寄生P+toPWMOSFET,特性表征:Vt,Vpt,Leakage.,影响STI隔离的主要因素：STI蚀刻、深度和STIlineroxide质量(lessQf,Dit)等.STI附近的掺杂分布。PW&NWrecipe,thermalbudget.N+和NW，P+和PW间距。,STI,12,RNWE(orINWE)&KinkEffect,可用电场增强或并联寄生STIMOS管模型来解释。,Birdbeak下面栅氧较厚，掺杂较重。,13,Kinkeffectordoublehump,STIoxiderecessordivotresultsintwoparasiticedgetransistor.Sharptopcornerenhancesthefield&reduceVtoftheparasitictransistor.,14,以下是相关文献总结,15,DiodeLeakage,TI,IEDM-1996,16,TI,IEDM-1997/98,Isolationvs.WellE,CSE,STIdepth,17,浅结、浅井、深槽、深CS抗闭锁。,18,浅结、浅井、深槽有利于隔离，CS的深度要优化。,19,STImat.Dependdoublehump,TI,IEDM-1996,20,STImat.DependSW&Qbd,21,STImat.DependNWE,22,STImat.Dependdiffsize,diodeleakage,23,STImat.DependSTIisolation,24,HighTemperatureRe-oxidationofSTI:Roundtopcorner,RepairSidamage,DensifyHDPoxide,BetterRNCE&GOI,ReduceWeff(0.15um).,HTR,Bell,IEDM-1997,25,HTR-temperatureeffects,26,N+toN+Isolation,Qbd,27,RNCE,28,RNCE-HTR&lineroxideeffects,Bell,VLSI-1999,29,30,Sacrificialoxide,lineroxide&DCEHTR,31,Anomalousshortchannelhump,Hyundai,IRPS-2000,32,33,STI技术,STI工艺步骤STI对器件和隔离影响电离辐照效应看法,34,电离辐射主要影响Si/SiO2界面，所以STI周围的gateoxide，lineroxide，divot形状对器件和隔离的抗辐射能力起主要作用。Lineroxide的抗辐射能力影响wellisolation和STIisolation，辐射后会产生漏电、隔离失效、甚至闩锁效应。Divot深度和divot周围氧化层的辐射正电荷会降低寄生管的Vt，NMOS管Vt降低，漏电加剧，特别是小尺寸NMOS。Divot周围氧化层的辐照缺陷会加剧MOS器件的热载流子效应，降低使用寿命。工艺加固上，可考虑优化lineroxide和gateoxide条件、减小divot工艺和t