WAT-IntroductionPPT课件

PIE-B3-WATXinguang_Sun2007-03-31,WATIntroduction,Outline,WhyWAT?Hardwarethesitefail.CriteriaIfthefailuresiteswithingreaterorequalthan3;thewaferisfail.(Scarp/Retestcriteria)(2)LotHold/ReleaseCheck:Ifthewaferfailpcsfrom(1)=1HoldDHRule2:Forkeyparameterlike“VBD$”or“Vbd$”;AnysitefailwithinwaferHoldDHRule3:AnykeyparameterOOSandOOVsiterate10%thenthislotfail.DHRule4:Anysitewholeparameterfailrate25%thenthislotfail.DHRule5:ForkeyparameterscountinrawdataissamewithlimitfileDHRule6:Forkeyparametersandsitescountinlastrawdataissamewithpreviousdataperwafer.,WatchRule-PH,PARAMETERHOLDRule:“Userdefine”PHRule1(X/5):Bywafer,Foreachparameterdatayouselect,iffailsitenumberofeachwaferislargerthanorequaltotX;Rule1checkfail.PHRule2(X/125):ByLot,Foreachparameterdatayouselect,iffailsitenumberofthewholelotislargerthanorequaltotX;Rule2checkfail.PHRule3(X/25):BySite,Foreachparameterdatayouselect,iffailsitenumberofthewholelotislargerthanorequaltotX;Rule3checkfail.,Mostly,TheWATParameterNamingUseThisType:,IfNeed.,Sample:UseLogicDeviceWAT11VTITestItemsassample.,WATParameterNamingRule,1.MOSFETTransistorsNaming,WATParameterNamingRule,2.MOSFETCapacitor,WATParameterNamingRule,3.FieldTransistor,4.JunctionDiode,WATParameterNamingRule,5.Sheetresistance,WATParameterNamingRule,6.Contact(via,stackvia)resistance,WATParameterNamingRule,7.Poly&metalcontinuity,8.SalicideBridge,WATParameterNamingRule,9.Intra-Isolation,10.Inter-Isolation,WATParameterNamingRule,11.PIP,MIMandmetalinterconnectcapacitors,12.VerticalBipolar,WATParameterNamingRule,1.NMOSsVTITestCondition(use10D13assample),TestVTI_N12_10_D13Item:VD=0.1V,VS=VB=0V,VG=0VTO0.8*1.2VMEASUREVTI_N=VGID=0.1A*(W/L)(W=10,L=0.13),VD=0.1V,VS=VB=0V,VG=0Vto0.8*1.2V(=0.96V),DetectID,VTIshowtheThresholdvoltageinlinearregion.VTIRelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,DeviceTestCondition(Basic),VTI:线性区间，常数电流模式下的开启电压,2.NMOSsIDSATTestCondition(use10D13assample),TestIDSAT_N12_10_D13Item:VD=VG=1.2V,VS=VB=0VMEASUREIDSAT_N=ID/W,VS=VB=0V,VG=VD=1.2V,MeasureID,IDSATshowtheSaturationcurrentinworkstatus.IDSATRelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,DeviceTestCondition(Basic),IDSAT:饱和电流,3.NMOSsIOFFTestCondition(use10D13assample),TestIOFF_N12_10_D13Item:VD=1.1*1.2V,VG=VS=VB=0VMEASUREIOFF_N=ID/W,VG=VS=VB=0V,MeasureID,IOFFshowtheleakagecurrentwhendevicewasOFF.IOFFRelatedIn-LineData:1.S/Dimplant(N/PPlus)2.Wellimplant3.CTETCH4.Co-Loop5.AA/STIstructure6.SmallDefect7.Thermalbudget,VD=1.1*1.2V=1.328V,DeviceTestCondition(Basic),IOFF:器件关闭状况下的漏电流,4.NMOSsBVDSTestCondition(use10D13assample),TestBVDS_N12_10_D13Item:VG=VS=VB=0V,VD=0VTO10VMEASUREVBD_N=VDID=0.1A*W,VG=VS=VB=0V,DetectID,BVDSshowtheBrakeDown(Soft)statusofdevice.BVDSRelatedIn-LineData:1.GateOXthickness/quality2.Charge3.PolyETCH4.Co-Loop5.AA/STIstructure6.SmallDefect7.Thermalbudget,VD=0Vto10V,DeviceTestCondition(Basic),BVDS:S-D之间的击穿电压,1.NMOSsVTGMTestCondition(use10D13assample),TestVTGM_N12_10_D13Item:VD=0.1V,VS=VB=0V,VG=0VTO0.8*1.2VEXTRAPOLATETOVGATMAX.SLOPEMEASUREVTGM_N=VG(INTERCEPT)-0.5*VD,VD=0.1V,VS=VB=0V,VG=0Vto0.8*1.2V(=0.96V),DetectID,VTGMshowtheThresholdvoltageinlinearregion.VTGMRelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,DeviceTestCondition(Basic),VTGM:线性区间，GM模式下的开启电压,红色：Id/Vg的斜率蓝色：Id-Vg曲线,2.NMOSsVTSATTestCondition(use10D13assample),TestVTSAT_N12_10_D13Item:VD=1.2V,VS=VB=0V,VG=0VTO0.8*1.2VMEASUREVTSAT_N=VGID=0.1A*(W/L),VD=1.2V,VS=VB=0V,VG=0Vto0.8*1.2V(=0.96V),DetectID,VTSATshowtheThresholdvoltageinsaturationregion.VTSATRelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,DeviceTestCondition(Basic),VTSAT:饱和区间，常数电流模式下的开启电压,3.NMOSsISUBTestCondition(use10D13assample),TestISUB_N12_10_D13Item:VD=1.1*1.2V,VS=VB=0V,VG=0.2*1.2VTO1.1*1.2VFINDISUB_N(MAX),VD=1.1*1.2V=1.32V,VS=VB=0V,VG=0.2*1.2Vto1.1*1.2V,DetectIB,ISUBshowthemax.substratecurrent.ISUBRelatedIn-LineData:1.S/Dimplant(N/PPlus)2.Wellimplant3.CTETCH4.Co-Loop5.AA/STIstructure6.SmallDefect7.Thermalbudget,DeviceTestCondition(Basic),ISUB:由热电子引起的基底电流,4.NMOSsDIBLTestCondition(use10D18assample),TestDIBL_N12_10_D13Item:DIBL_N=(VTLIN-VTSAT)/(1.2-0.05),DIBLshowthedraininducedbarrierloweringlevelDIBLRelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,DeviceTestCondition(Basic),DIBL:由漏电流VD引起的迁移效应的水准,5.NMOSsGAMMATestCondition(use10D13assample),TestGAMMA_N12_10_D13Item:a.VD=0.1V,VS=0V,VB=0V,VG=0VTO0.8*1.2V.EXTRAPOLATETOVGATMAX.SLOPE.MEASUREVTGM(0)=VG(INTERCEPT)-0.5*VD.b.VD=0.1V,VS=0V,VB=-0.5*1.2V,VG=0VTO0.8*1.2V.EXTRAPOLATETOVGATMAX.SLOPE.MEASUREVTGM(VB)=VG(INTERCEPT)-0.5*VD.C.GAMMA_N12=(VTGM(VB)-VTGM(0)/(Phis+0.5*1.2)1/2-(Phis)1/2)Phis=0.887488,VD=0.1V,VS=0V,VG=0to1.1*1.2V,DetectID,GAMMAshowthemax.substratecurrent.GAMMARelatedIn-LineData:1.Polyin-LineAEICD2.VTimplant3.AAin-LineAEICD4.GateOXthickness/quality5.LDDimplant6.S/Dimplant(N/PPlus)7.Thermalbudget,VB=-1.5*1.2V,DeviceTestCondition(Basic),GAMMA:器件的BodyEffective参数,2.NMOSsVTFPOTestCondition(useS0510D21assample),TestVTFPO_N_10_D21Item:VD=2.5V,VS=VB=0V,VG=2VTO6.5VMEASUREVTFPO_N=VGID=0.1A,VD=2.5V,VS=VB=0V,VG=2Vto6.5V,DetectID,VTFPOshowtheThresholdvoltageofSTIdevice.VTFPORelatedIn-LineData:1.STISt