芯片制造基础知识ppt课件

芯片制造流程,基本过程,晶园制作WaferCreation芯片制作ChipCreation后封装ChipPackaging,第1部分晶园制作,1.1多晶生成,PolySiliconCreation1目前半导体制程所使用的主要原料就是晶园(Wafer)，它的主要成分为硅(Si)。富含硅的物质非常普遍，就是沙子(Sand)，它的主要成分为二氧化硅(SiO2)。沙子经过初步的提炼，获得具有一定纯度的硅，再经过一些步骤提高硅的纯度，半导体制程所使用的硅需要非常高的纯度。接着就是生成多晶硅(PolySilicon)。,PolySiliconCreation2采用一种叫做Trichlorosilane的物质(SiHCl3)作为溶剂，氢气作为反应环境，在钽(tantalum)电热探针指引下，经过初步提炼的硅形成晶体。这种过程需要多次，中途还会用到氢氟酸(HF)这样剧毒的化学药品，硅的纯度也随着这个过程而进一步被提高。最后生成多晶硅的硅锭。,PolySiliconCreation3,1.2单晶制作,CrystalPulling1多晶硅硅锭中晶体的晶向是杂乱无章的，如果使用它来制作半导体器件，其电学特性将非常糟糕，所以必须把多晶硅制作成单晶硅，这个过程可以形象地称作拉单晶(CrystalPulling)。将高纯度的多晶硅碾碎，放入石英坩埚，加高温到1400C，注意反应的环境是高纯度的惰性气体氩(Ar)。精确的控制温度，单晶硅就随着晶种被拉出来了。,单晶分类,单晶分为直拉单晶和区熔单晶两种直拉单晶由多晶碎料在石英锅内融化后由子晶拉制而成。集成电路用得芯片多由这种方法拉制的单晶加工而成。区熔单晶由多晶棒悬空，经过电圈加热至融化状态，接触子晶而形成单晶。这种单晶特点电阻高，纯度高，多用于IGBT等放大电路,CrystalPulling2,CrystalPulling3,制作完毕的单晶硅按照半径的大小来区分，目前正在使用的有：150mm(6)200mm(8)300mm(12)正在发展的有：400mm(16),1.3晶园切片,WaferSlicing单晶硅具有统一的晶向，在把单晶硅切割成单个晶园(Wafer)的时候，首先要在单晶硅锭上做个记号来标识这个晶向。通常标识该晶向的记号就是所谓Flat或者Notch(平边、凹槽)。,6Wafer6的晶园通常采用所谓“平边”的方法来标识晶向。8Wafer8的晶园采用Notch。12,16,Wafer采用Notch，为什么呢？猜想。,1.4晶园抛光,Lapping10sec,N-WELL,GATEOX,SACOXIDEREMOVE50:1HFGATE1_OXSTEP-1:SPM+HFSTEP-2:APM+HPM800C,58A,WETDUALGATEOXIDEPHOTOGATEOXIDEETCH/CRS130:1:7BOE,H2SO4+H2O2GATE2OXStep-1:SPMStep-1:APM+HPM750C,WET23A,Final70A,P1DEPSiONDEP320AHMCOATINGPEOX150APolyPHOTOADI0.17+/-0.017HMDRYETCHASHERANDWETSTRIPHF100:1/H2SO4+H2O2PolyETCHAEI0.15+/-0.015POLYWETSTRIPHF100:1/H2SO4+H2O2SIONREMOVE50:1HF+H3PO4PolyRe_Oxidation1015C,21ARTO,P1DEP,LDD1,NLLPhotoImplant:PocketimplantIn3.0E13/130K/T30R445NLDDimplantAs1.1E15/003K/T0ResistorstripPLLPhotoPocketimplantAs2.9E13/130K/T30R445PLDDimplantBF21.6E14/4K/T0Resistorstrip,N-Well,P-Well,N,N,P,P,LDD2(for3.3VMOS),PLHPhotoLDDimplant:(3.3V&1.8V)F2.50E14_005K_T0ResiststripLDDRTA950C,10sNLHPhotoLDD1ImplantAs3.00E13_050K_T00LDD2ImplantP5.00E13_030K_T00Resiststrip,NITRIDESPACER,NitrideSpacer,CleanLINING150TEOS700C,150A(+-15A)SiNSPACERSiN300A(+-30A)COMPOSITESPACERTEOS1000A(+-100A)SPACERETCH300ASN/1000ATEOSClean/OxideStripH2SO4+H2O2/HF100:1,1min,N+&P+,N+SNPhotoN+implant1A5.50E15_060K_T00N+implant2P1.50W14_035K_T00ResistStripP+SPPhotoP+Implant1B3.50E15_005K_T00P+Implant2B3.00E13_015K_T00ResistStrip,SALICIDEBLOCK,STDCleanSABDeposistionCAPOX,350+-30AS/DRTAAnnealing1020C,20sec,N2SABPhotoSalicideBlockEtchdry/WETETCHResistStrip,CoSALICIDE,Pre-COSalisideDip(100:1HF1min.)SalicideDeposition(Co75A/TiN200A)Salicide1stRTA(530oC30secN2),SalicideSelectiveEtch(sc1+m2.)Salicide2ndRTA(850oC30secN2),SalicideTransistor,INTERLAYERDIELECTRIC,PE-SION400ADEPBPTEOSDeposition1500ABPSGFLOW620C30minCRCLEANPETEOSdeposition8500AOxCMPforILD(6500A)CRCLEAN,N-Well,P-Well,N+,1.5kSABPSG,8.5kPETEOS,400SION,CONTACTETCH,PE-SION600ADEPARCCTPhotoContactetchAsherResistStrip,W-PLUG,CONTGLUELAYERETCH100/IMP-TI100/CVD-TIN50Silicideannealing(690C,60s)3000+/-300WCVDDEPWCMPforIMD,CT,ContactFormation,METAL1DEPOSITION,MET1GLUE(200Ti/250TiN)MET1AL(3000AlCu/50Ti/300TiN),METAL1ETCH,InorganicBARCSIONDEPM1PhotoMetaletchResistStrip,DR(L/S)=0.23/0.23,HDPOXIDEFORIMD1,5kHDPUSG&11.5kPETEOSdep,HDPOxideGapfillCapability,0.18mMetal5atDR(0.28/0.28),VIA1PHOTO&ETCH,Via1PhotoViaetchAsherResistStrip,W-PLUG,VIAGLUELAYERETCH180/100Ti/50TiN(IMP/CVD)3000+/-300WCVDWCMPforIMD,Met1,N-Well,P-Well,N+,100Ti/50TiN,ViaFormation,METAL2:DEP&ETCH,MET2GLUE(200Ti/250TiN)MET2AL(4000AlCu/50Ti/300TiN)InorganicBARCSIONDEP320A+-32M2PhotoMetaletchResistStrip,DR(L/S)=0.28/0.28,VIA2:DEP&ETCH,6kHDPUSG&11.5kPETEOSdepOxCMPforIMDPE-SiON600AVia2PhotoViaetchResistStrip,METAL3DEP&ETCH,W-PLUG,VIAGLUELAYERETCH130/160Ti/70TiN(IMP/CVD)3.3kWCVDWCMPforIMD,MET3GLUE(200Ti/250TiN)MET3AL(8000AlCu/50Ti/600TiN)InorganicBARCSIONDEP320A+-32M3PhotoMetaletchResistStrip,DR:0.28/0.28,VIA3:DEP&ETCH,6kHDPUSG&11.5kPETEOSdepOxCMPforIMDPE-SiON600AVia3PhotoViaetchResistStrip,DR:0.26/0.26,METAL4DEP&ETCH,W-PLUG,MET4GLUE(200Ti/250TiN)MET4AL(4000AlCu/50Ti/600TiN)InorganicBARCSIONDEP320A+-32M4PhotoMetaletchResistStrip,VIAGLUELAYERETCH130/160Ti/70TiN(IMP/CVD)3.3kWCVDWCMPforIMD,DR:0.28/0.28,VIA4:DEP&ETCH,6kHDPUSG&11.5kPETEOSdepOxCMPforIMDPE-SiON600AVia4PhotoViaetchResistStrip,Met1,N-Well,P-Well,P+,P+,N+,N+,Met2,Met3,Met4,DR:0.26/0.26,METAL5:DEP&ETCH,W-PLUG,MET5GLUE(200Ti/250TiN)MET5AL(4000AlCu/50Ti/600TiN)InorganicBARCSIONDEP320A+-32M5PhotoMetaletchResistStrip,VIAGLUELAYERETCH130/160Ti/70TiN(IMP/CVD)3.3kWCVDWCMPforIMD,DR:0.28/0.28,VIA5:DEP&ETCH,6kHDPUSG&11.5kPETEOSCMPforIMDPE-SiON600AVia5PhotoViaetchResistStrip,DR:0.36/0.35,METAL6:DEP&ETCH,W-PLUG,MET6GLUE(200Ti/250TiN)MET6AL(6000AlCu/375TiN)InorganicBARCSIONDEP320A+-32M6PhotoMetaletchResistStri