硅-氧化锌异质结.ppt

Si(p-type)/ZnO(N-type)Heterojunction,FabricationElectricalPropertiesApplications,Fabrication,ZnO:a=3.24982A,c=5.20661AEg=3.37eV,Si:a=5.65754AEg=1.12eV,Largelatticemismatch(about40%),Fabrication,ZnOFilmonSi:Solgelprocess;Magnetronsputtering;MO-CVDAtomicLayerDepositionZnOnanorodonSi:Hydrothermalmethod;Electrodeposition(ECD);ThermalevaporationAnnealing,Buffer:ZnO,SiO2,GaN,Clickme,Clickme,ElectricalProperties,Heterojunction:P-N;P-P;N-NHere,wefouseonSi(p-type)/ZnO(n-type),EF;Eg;Bandoffset;Electronaffinity;Barrier(electron/hole).,ElectricalProperties,WithSiOxattheinterface:,AppliedSurfaceScience252(2006)34493453,ElectricalProperties(forwardbias),A:Tunnelingmechanism,Recombinationofelectrons,tunnelingfromZnOintothegapstatesinSi,andholestunnelingacrosstheheterojunctionbarrierfromp-Sitonc-ZnO,APPLIEDPHYSICSLETTERS90,243106(2007),First,depositZnOcrystallineseedsbysol-geltechnique;thangrowZnOnanostructuresbyhydrothermalmethod,ElectricalProperties(forwardbias),I:thermallygeneratedcarriertunneling；II:recombination-tunnelingmechanism；III:space-charge-limitedcurrent（SCLC）,I:thermallygeneratedcarriertunneling；II:recombination-tunnelingmechanism；III:space-charge-limitedcurrent（SCLC）,JOURNALOFAPPLIEDPHYSICS105,114504(2009),ElectricalProperties(forwardbias),Appl.Phys.Lett.,Vol.83,No.14,6October2003,RFmagnetronsputtering,ElectricalProperties(reversebias),Visible:saturatedwithreversebiasUV:linearincreasewithbias,LimitionoftheZnObuffercrystallinity;Deep-leveldefects;Dislocationsbylargelatticemismatch;DiffuesdSiimpurity,APPLIEDPHYSICSLETTERS88,182112(2006),MOCVD,Application(ELproperties),J.Phys.Chem.C,Vol.114,No.35,2010,Workingelectrode:Sisubstrate;Referenceelectrode:Saturatedcalomelelectrode;Depositionbath:0.1MKCland0.2mMZnCl2saturatedwithmolecularoxygenT=90,Back,Application(ELproperties),SiOx:2nm,DepositingZnOthinlmsonp-Si(111)substratesbymagnetronsputtering,JOURNALOFAPPLIEDPHYSICS107,083701(2010),Application(ELproperties),chargecarrierrecombinationtakesplacemainlyontheSisideratherthantheZnOlayer,hydrothermalmethod,Nanotechnology17(2006)22712274,Application(ELproperties),Lowlight-emittingefciency,WithoutorwithZnOseedandannelling,J.Vac.Sci.Technol.B27(2),Mar/Apr2009,ZnOnanorodbyHydrothermalonZnOseedlayer,Application(ELproperties),APPLIEDPHYSICSLETTERS94,013503(2009),Application(photodiode),Underthereversebiasesof2V,Siliconcore:Ag-inducedelectrolessetchingZnOshell:atomiclayerdeposition,APPLIEDPHYSICSLETTERS98,033102(2011),Application(photodiode),SolarEnergyMaterialsJsc=28mA/cm2;FF=0.721)forAlZnO/SiO2/Si/Al,Thankyou!,Grains：50-100nm,Multi-steptunnelingmodel,AppliedSurfaceScience252(2006)34493453,3meV5.3meV6meV,Si(111)RFsputteringZnOMO-CVDZnO,ThinSolidFilms433(2003)131134,Back,LimitionoftheZnObuffercrystallinity;Deep-leveldefects;Dislocationsbylargelatticemismatch;DiffuesdSiimpurity,APPLIEDPHYSICSLETTERS88,182112(2006),MOCVD,Sputterdepositionofn-ZnOfilmsonp-Sisubstrates,ThinSolidFilms403404(2002)553557,hydrothermalmethod,Nanotechnology17(2006)22712274,Appl.Phys.Lett.,Vol.83,No.14,6October2003,RFmagnetronsputtering,J.Phys.Chem.C,Vol.114,No.35,2010,Workingelectrode:Sisubstrate;Referenceelectrode:Saturatedcalomelelectrode;Depositionbath:0.1MKCland0.2mMZnCl2saturatedwithmolecularoxygenT=90,Back,Reversebiasof-1V,APPLIEDPHYSICSLETTERS97,013503(2010),APPLIEDPHYSICSLETTERS90,243106(2007),First,depositZnOcrystallineseedsbysol-geltechnique;thangrowZnOnanostructuresbyhydrothermalmethod,SiOx:2nm,DepositingZnOthinlmsonp-Si(111)substratesbymagnetronsputtering,JOURNALOFAPPLIEDPHYSICS107,083701(2010),APPLIEDPHYSICSLETTERS94,013503(2009),Siliconcore:Ag-inducedelectrolessetchingZnOshell:atomiclayerdeposition,APPLIEDPHYSICSLETTERS98,033102(2011),WithoutorwithZnOseedandannelling,J.Vac.Sci.Technol.B27(2),Mar/Apr2009,Atomiclayerdeposition(ALD),J.Phys.D:Appl.Phys.43(2010)345101(4pp),Back,I：thermallygeneratedcarriertunneling；II：recombination-tunnelingmechanism；III：space-charge-limitedcurrent（SCLC）,JOURNALOFAPPLIEDPHYSICS105,114504(2009),SolarEnergyMaterials&SolarCells93(2009)14171422,Aluminum-dopedzincoxidelmsweredepositedonSisubstratesbySCS