光电子技术专业英语.ppt

光电子技术专业英语,Contents,Chapter1科技英语翻译,Chapter2SemiconductorPhysicsandconductorssuchasaluminumandsilverhavehighconductivities,typicallyfrom104to106S/cm.,Chapter2SemiconductorPhysicsandDevice,2.1SemiconductorMaterialsThestudyofsemiconductormaterialsbeganintheearlynineteenthcentury.Overtheyearsmanysemiconductorshavebeeninvestigated.,Chapter2SemiconductorPhysicsandDevice,2.1SemiconductorMaterialsTwogeneralclassificationsofsemiconductorsaretheelementalsemiconductormaterialsandthecompoundsemiconductormaterials.,Chapter2SemiconductorPhysicsandDevice,Chapter2SemiconductorPhysicsandDevice,2.1SemiconductorMaterialsTable2-1Aportionoftheperiodictablerelatedtosemiconductors,Chapter2SemiconductorPhysicsandDevice,2.1SemiconductorMaterialsTable2-2Alistofsomesemiconductormaterials,2.1SemiconductorMaterialsAlthoughwedonotknowasmuchaboutthetechnologyofcompoundsemiconductortechnologyaswedoaboutthatofsilicon,compoundsemiconductortechnologyhasadvancedpartlybecauseoftheadvancesinsilicontechnology.,Chapter2SemiconductorPhysicsandDevice,2.2TypeofSolidsAmorphous,polycrystalline,andsinglecrystalarethethreegeneraltypesofsolids.Eachtypeischaracterizedbythesizeofanorderedregionwithinthematerial.,Chapter2SemiconductorPhysicsandDevice,2.2TypeofSolidsAnorderedregionisaspatialvolumeinwhichatomsormoleculeshavearegulargeometricarrangementorperiodicity.Thesingle-crystalregionsarecalledgrainsandareseparatedfromoneanotherbygrainboundaries,Chapter2SemiconductorPhysicsandDevice,2.2TypeofSolidsTheadvantageofasingle-crystalmaterialisthat,ingeneral,itselectricalpropertiesaresuperiortothoseofanonsingle-crystalmaterial,sincegrainboundariestendtodegradetheelectricalcharacteristics.,Chapter2SemiconductorPhysicsandDevice,(a)amorphous(b)polycrystalline(c)singlecrystalFigure2-1Schematicsofthreegeneraltypesofcrystals.,Chapter2SemiconductorPhysicsandDevice,2.3CrystalStructureThesemiconductormaterialswewillstudyaresinglecrystals,thatis,theatomsarearrangedinathree-dimensionalperiodicfashion.,Chapter2SemiconductorPhysicsandDevice,2.3CrystalStructureTheperiodicarrangementofatomsinacrystaliscalledalatticeInacrystal,anatomneverstraysfarfromasingle,fixedposition.Theelementsemiconductors,suchassiliconandgermanium,haveadiamondlatticestructure.,Chapter2SemiconductorPhysicsandDevice,2.3CrystalStructureAconvenientmethodofdefiningthevariousplanesinacrystalistouseMillerindices.Theseindicesareobtainedusingthefollowingsteps:,Chapter2SemiconductorPhysicsandDevice,2.3CrystalStructure（1）FindtheinterceptsoftheplaneonthethreeCartesiancoordinatesintermsofthelatticeconstant.（2）Takethereciprocalsofthesenumbersandreducethemtothesmallestthreeintegershavingthesameratio.（3）Enclosetheresultinparentheses(hkl)astheMillerindicesforasingleplane.,Chapter2SemiconductorPhysicsandDevice,2.4TheAtomicStructureofSemiconductorsElectronicdevicessuchasdiodeandtransistorsareconstructedfromspecialmaterialscalledsemiconductors.Inthissection,youwilllearnabouttheatomicstructureofsemiconductors,Chapter2SemiconductorPhysicsandDevice,2.4.1ElectronShellsandOrbitsTheelectricalpropertiesofmaterialsareexplainedbytheiratomicstructure.Intheearlypartofthe20thcentury,NeilsBohr,aDanishphysicist,developedamodeloftheatomthatshowedelectronsorbitingthenucleus.,Chapter2SemiconductorPhysicsandDevice,2.4.1ElectronShellsandOrbitsEnergyistheabilitytodoworkandissubdividedintopotential(position),kinetic(motion),andrest(mass).,Chapter2SemiconductorPhysicsandDevice,2.4.2Valenceelectrons,ConductionElectrons,andIonsElectronsinorbitsfartherfromthenucleusarelesstightlyboundtotheatomthanthoseclosertothenucleus.,Chapter2SemiconductorPhysicsandDevice,2.4.2Valenceelectrons,ConductionElectrons,andIonsAnelectronthatisintheoutermostshelliscalledavalenceelectron;valenceelectronshavethehighestenergyandarerelativelylooselyboundtotheirparentatom.,Chapter2SemiconductorPhysicsandDevice,2.4.2Valenceelectrons,ConductionElectrons,andIonsSometimes,avalenceelectroncanacquireenoughenergytobreakfreeofitsparentatom.,Chapter2SemiconductorPhysicsandDevice,2.4.2Valenceelectrons,ConductionElectrons,andIonsElectronsinorbitsfartherfromthenucleusarelesstightlyboundtotheatomthanthoseclosertothenucleus.,Chapter2SemiconductorPhysicsandDevice,2.4.3MetallicBandsMetalstendtobesolidsatroomtemperature.Thenucleusandinner-shellelectronsofmetalsoccupyfixedlatticepositions.,Chapter2SemiconductorPhysicsandDevice,2.4.3MetallicBandsWiththelargenumberofatomsinthemetalliccrystal,thediscreteenergylevelforthevalenceelectronsisblurredintoabandcalledthevalenceband,Chapter2SemiconductorPhysicsandDevice,Chapter2SemiconductorPhysicsandDevice,Figure2-4Energyleveldiagramsforthreetypesofmaterials.Theupperlevelistheconductionband;thelowerlevelisthevalenceband.,2.4.4CovalentBondsAtomsofsomesolidmaterialsformcrystals,whicharethree-dimensionalstructuresheldtogetherbystrongbondsbetweentheatoms.Thesharedelectronsarenotmobile;eachelectronisassociatedbyacovalentbondbetweentheatomsofthecrystal.Electronicdevicesareconstructedfrommaterialscalledsemiconductors.Theimportantdifferencebetweenaconductorandasemiconductoristhegapthatseparatesthebands.,Chapter2SemiconductorPhysicsandDevice,2.4.5ElectronsandHoleCurrentWhenanelectronjumpstotheconductionband,avacancy36isleftinthevalenceband.Thisvacancyiscalledahole37.Apieceofintrinsic39(pure)siliconatroomtemperaturehas,atanyinstant,anumberofconduction-band(free)electronsthatareunattachedtoanyatomandareessentiallydriftingrandomlythroughoutthematerial.,Chapter2SemiconductorPhysicsandDevice,Whenavoltageisappliedacrossapieceofintrinsicsilicon,asshowninFig.2-5,thethermallygeneratedfreeelectronsintheconductionbandareeasilyattractedtowardthepositiveend.,Chapter2SemiconductorPhysicsandDevice,2.5ThePNJunctionIntrinsicsiliconisnotagoodconductor.Byaddingasmallamountofimpuritytothesiliconcrystal,itselectricalpropertiescanbechangeddramatically.,Chapter2SemiconductorPhysicsandDevice,2.5.1DopingTheconductivityofsilicon(orgermanium)canbedrasticallyincreasedbythecontrolledadditionofimpuritiestothepure(intrinsic)semiconductivematerial.Toincreasethenumberofconduction-bandelectronsinpuresilicon,acontrollednumberofpentavalentimpurityatomscalleddonorsareaddedtothesiliconcrystal.,Chapter2SemiconductorPhysicsandDevice,2.5.1DopingToincreasethenumberofholesinpuresilicon,trivalentimpurityatomscalledacceptorsareaddedduringmanufacture.Theprocessofcreatingn-typeorp-typematerialsretainstheoverallelectricalneutrality.,Chapter2SemiconductorPhysicsandDevice,2.5.2ThePNJunctionWhenapieceofintrinsicsiliconisdopedsothathalfisntypeandtheotherhalfisptype,apnjunctionisformedbetweenthetworegions.,Chapter2SemiconductorPhysicsandDevice,2.5.3TheDepletionRegionWhenthepnjunctionisformed,someoftheconductionelectronsnearthejunctiondriftacrossintothepregionandrecombinewithholesnearthejunction,asshowninFig.2-7(a).,Chapter2SemiconductorPhysicsandDevice,2.5.3TheDepletionRegion,Chapter2SemiconductorPhysicsandDevice,2.6BiasingtheSemiconductorDiodeAsinglepnjunctionformsasemiconductordiode.Thereisnocurrentacrossapnjunctionatequilibrium.,Chapter2SemiconductorPhysicsandDevice,2.6.1ForwardBiasThetermbiasinelectronicsreferstoafixeddcvoltagethatsetstheoperatingconditionsforasemiconductordevice.Forwardbiasistheconditionthatpermitscurrentacrossapnjunction.2.6.2ReverseBiasReversebiasisthebiasconditionthatpreventscurrentacrossthepnjunction.,Chapter2SemiconductorPhysicsandDevice,2.6.3PeakInverseVoltage(PIV)Whenadiodeisreverse-biased,itmustbeabletowithstandthemaximumvalueofreversevoltagethatisappliedoritwillbreakdown.2.6.4ReverseBreakdownIftheexternalreverse-biasvoltageisincreasedtoalargeenoughvalue,avalanchebreakdownoccurs.,Chapter2SemiconductorPhysicsandDevice,2.7SemiconductorDevice-BJTandFETAsyourecallfrompreviousstudiesinthistext,semiconductorshaveelectricalpropertiessomewherebetweenthoseofinsulatorsandconductors.,Chapter2SemiconductorPhysicsandDevice,2.7.1BipolarjunctiontransistorTheBJTiscommonlydescribedasacurrent-operateddevicebecausethecollector/emittercurrentiscontrolledbythecurrentflowingbetweenbaseandemitterterminals.2.7.2Field-effecttransistorTheFET,avoltage-amplifyingdevice,ismorecompactandpowerefficientthanBJTdevices.,Chapter2SemiconductorPhysicsandDevice,2.8SemiconductorApplicationsSemiconductordevicesareallaroundus.Semiconductordevicesarecontainedintelevisionsets,portableradios,stereoequipment,andmuchmore.Scienceandindustryalsorelyheavilyonsemiconductordevices.Thevarioustypesofmodemmilitaryequipmentareliterallyloadedwithsemiconductordevices.,Chapter2SemiconductorPhysicsandDevice,2.9SemiconductorCompetitionsemiconductordevicesaremuchsmallerthantubesForlow-powerapplications,whereefficiencyisasignificantfactor,semiconductorshaveadecidedadvantage.semiconductordevicesareruggedandlong-lived,Chapter2SemiconductorPhysicsandDevice,PREVIEWTheelectromagnetic(EM)interactionisoneofthefundamentalinteractionsofthephysicalworld.EMfieldtheoryisoneofthebest-establishedgeneraltheoriesthatprovidesexplanationsandsolutionstointricateopticalandelectricalengineeringproblemswhenothertheoriesarenolongerapplicable.,Chapter3ElectromagneticFieldandElectromagneticWave,3.1TheConceptofElectromagneticFieldsandWavesEMfieldcanbeviewedasthecombinationofanelectricfieldandamagneticfield.Theelectricfieldandthemagneticfieldareboththevectorfields.EMwave(radiation)isaself-propagatingwaveinspacewithelectricandmagneticcomponents.Fromaclassicalperspective,theEMfieldcanberegardedasasmooth,continuousfield,propagatedinawavelikemanner;whereas,fromaquantummechanicaperspective,thefieldisseenasquantized,beingcomposedofindividualparticles.,Chapter3ElectromagneticFieldandElectromagneticWave,3.2HistoryofElectromagneticWaveElectricandmagneticphenomenahavebeenknownformilleniaIn1820attheUniversityofCopenhagen,HansChristianOersted,professorofphysics,madethemomentousdiscoverythatanelectriccurrentinawirecoulddeflectamagneticneedle.In1831,theBritishscientistMichaelFaradaydemonstratedthereciprocaleffect,inwhichamovingmagnetinthevicinityofacoilofwireproducedanelectriccurrent.By1850Faradayhadcompletedmuchofhisworkbuthedidnotformulate23hislawsmathematicallyandthemajorityofscientistshadfailedtorealizeitssignificance.,Chapter3ElectromagneticFieldandElectromagneticWave,3.2HistoryofElectromagneticWaveHertzsinterestinMaxwellstheorywasoccasionedbyaprizeofferedbytheBerlinAcademyofSciencesin1879forresearchontherelationbetweenpolarizationininsulatorsandEMinductionIn1888,HertzsetupstandingEMwavesusinganoscillatorandsparkdetectorofhisowndesignandmadeindependentmeasurementsoftheirwavelengthandfrequency.Onthisfoundation,aroundthe19thcentury,PopovinRussiaandMarconiinItalyinventedthetechnologytotransmitinformationusingEMwaves,pavingthewayforthesubsequentdevelopmentofmodernwirelesscommunications,broadcasting,radar,remotecontrol,microwavesensing,wirelessnetworksandlocalareanetworks,satellitepositioningopticalcommunicationsandotherinformationtechnologies.,Chapter3ElectromagneticFieldandElectromagneticWave,3.3BasicLawsofElectromagneticTheory电磁感应基本定理FE=qE.FM=qvB.F=qE+qvB,Chapter3ElectromagneticFieldandElectromagneticWave,3.3.1FaradaysInductionLaw法拉第感应定律,Chapter3ElectromagneticFieldandElectromagneticWave,Figure3-1(a)Thestartofacurrent（电流）inonecoil（线圈）producesatimevaryingmagnetic（磁）fieldthatinduces（引起）acurrentintheothercoil.(b)Anironcorecouples（连接）theprimarycoiltothesecondary（次级，第二级）.图3-1（a）在一个线圈开始产生电流时会产生一个随时间变化的磁场，这个磁场会在另一个线圈中引起电流。（b）一个铁核连接初级和次级线圈,3.3.1FaradaysInductionLaw,Chapter3ElectromagneticFieldandElectromagneticWave,WhenthesamechangingB-fieldpassesthroughtwodifferentwireloops,asinFig.3-2,theinducedemfislargeracrossterminalsofthelargerloop.,Inotherwords,herewheretheB-fieldischanging,theinducedemfisproportionaltotheareaAofthelooppenetratedperpendicularlybythefield.Iftheloopissuccessivelytiltedover,asisshowninFig.3-3,3.3.1FaradaysInductionLaw,Chapter3ElectromagneticFieldandElectromagneticWave,=,3.3.2GausssLaw-Electric,Chapter3ElectromagneticFieldandElectromagneticWave,GausssLaw,3.3.2GausssLaw-ElectricThepermittivityofamaterialcanbeexpressedintermsof0as,Chapter3ElectromagneticFieldandElectromagneticWave,3.3.3GausssLaw-magnetic,Chapter3ElectromagneticFieldandElectromagneticWave,themagneticequivalentofGausssLaw:,3.3.4AmperesCircuitalLaw,Chapter3ElectromagneticFieldandElectromagneticWave,Chapter3ElectromagneticFieldandElectromagneticWave,3.4PropertiesofElectromagneticWave,3.4.2Particlemodel,3.4.1Wavemodel,3.4.3Speedofpropagation,3.4PropertiesofElectromagneticWave,3.4.1Wavemodel3.4.2Particlemodel3.4.3SpeedofpropagationEMradiationinavacuumalwaystravelsatthespeedoflight,relativetotheobserver,regardlessoftheobserversvelocity.,Chapter3ElectromagneticFieldandElectromagneticWave,3.5ElectromagneticSpectrumandApplicationsE=hc,Chapter3ElectromagneticFieldandElectromagneticWave,Chapter3ElectromagneticFieldandElectromagneticWave,3.5ElectromagneticSpectrumandApplications,Chapter3ElectromagneticFieldandElectromagneticWave,4,InfraredradiationFar-infraredcanbeusedforastronomy.MidinfraredHotobjectscanradiatestronglyinthisrangeare.Near-infraredarerelevantforvisiblelight,6,UltravioletlightSunburn,forexample,iscausedbythedisruptiveeffectsofUVradiationonskincells,whichisthemaincauseofskincancer,3.5ElectromagneticSpectrumandApplications,Chapter3ElectromagneticFieldandElectromagneticWave,3.5ElectromagneticSpectrumandApplications,4.2.1Rectilinearpropagationoflight4.2.2Reflectionandrefraction4.2.3Interferenceanddiffraction,4.1.1Theviewsoftheantiquephilosophers4.1.2Classicaloptics4.1.3Modernoptics4.1.4Movingbodiesoptics,4.3.1Telescopes4.3.2Retinalacuity,Chapter4FundamentalsofOptics,4.1ABriefHistoryaboutOptics,4.2ContentsofOptics,4.3OpticsSystems,4.1ABriefHistoryaboutOptics4.1.1Theviewsoftheantiquephilosophers4.1.2ClassicalopticsThenatureoflightGeneralacceptanceofthewavetheoryThedevelopmentoftheelasticaethertheoryResearchesinelectricityandmagnetism,Chapter4FundamentalsofOptics,4.1ABriefHistoryaboutOptics4.1.3ModernopticsThediscoveryofcertainregularitiesinspectraPlancksequationThedevelopmentofthelasers,Chapter4FundamentalsofOptics,4.1ABriefHistoryaboutOptics4.1.4MovingbodiesopticsAnotherbranchofoptics,istheopticsofmovingbodies.Likethequantumtheoryithasgrownintoavastindependentfieldofstudy.,Chapter4FundamentalsofOptics,4.2ContentsofOptics4.2.1RectilinearpropagationoflightHuygensprincipleThepinholecameraShadowsandeclipses,Chapter4FundamentalsofOptics,4.2ContentsofOptics4.2.2ReflectionandrefractionReflectionThelawofreflectionThelawofrefraction,Chapter4FundamentalsofOptics,4.2ContentsofOptics4.2.3InterferenceanddiffractionInterferenceDiffraction,Chapter4FundamentalsofOptics,4.3OpticsSystems4.3.1Telescopes,Chapter4FundamentalsofOptics,4.3OpticsSystems4.3.2Retinalacuity,Chapter4FundamentalsofOptics,Chapter5FundamentalsofLasers,DefinitionofLaser,AbriefHistoryofLaser,PrincipleofLaserGeneration,StructureandPropertiesofLaserText,LasersTypes,FundamentalsofLasers,Chapter5,ApplicationofLaser,5.1DefinitionofLaserLasersaredevicesthatgenerateoramplifycoherentradiationatfrequenciesintheinfrared,visible,orultravioletregionsoftheelectromagneticspectrum.,Chapter5FundamentalsofLasers,5.2AbriefHistoryofLaserthefirstman-madestimulatedemissiondeviceonEarthcameinearly1954NicolaasBloembergenofHarvardUniversityin1956suggestedacontinuousthree-levelpumpingschemeforobtainingacontinuouspopulationinversionononemicrowaveresonancetransition,bypumpingwithcontinuousmicrowaveradiationonanothertransition.Thefirstexperimentallysuccessfulopticalmaserorlaserdeviceofanykind,however,wastheflashlamp-pumped10rubylaserat694nminthedeepredoperatedbyTheodoreH.MaimanattheHughesResearchLaboratoriesin1960.,Chapter5FundamentalsofLasers,5.3PrincipleofLaserGeneration5.3.1Spontaneousandstimulatedemission,absorption,Chapter5FundamentalsofLasers,5.3PrincipleofLaserGeneration5.3.1Spontaneousandstimulatedemission,absorption,Chapter5FundamentalsofLasers,5.3PrincipleofLaserGeneration5.3.2thelaseridea,Chapter5FundamentalsofLasers,ElementalchangeinthephotonfluxFforaplaneemwaveintravelingadistancethroughthematerial.,Schemeofalaser.,5.3PrincipleofLaserGeneration5.3.3pumpingschemes,Chapter5FundamentalsofLasers,5.4StructureandPropertiesofLaser5.4.1structureoflaserCavityconfigurationsModestructureBeamshape,Chapter5FundamentalsofLasers,5.4StructureandPropertiesofLaser5.4.2propertiesoflaserbeamsMonochromaticityCoherenceDirectionalityBrightnessShortpulseduration,Chapter5FundamentalsofLasers,5.5LasersTypescharacterizedaccordingtothephysicalstateoftheactivematerialsolid-statelasersliquidlasersgaslaserscharacterizedbythewavelengthofemittedradiationinfraredlasersvisiblelasersultraviolet(uv)x-raylaserscharacterizedbytheoutputpowercwlaserspulsedlasers,Chapter5FundamentalsofLasers,5.6ApplicationofLaser5.6.1IndustrialapplicationsDrillingWelding5.6.2MedicalapplicationsBothphotocoagulationandphotodisruptionoccurwherethelightisfocused,ratherthanwherethebeamenterstheeye.Therefore,thelightcanbeaimed,withoutmakinganyincision63atall,atthediseasedpartinsidetheeye,trulyanoninvasive64kindofsurgery.,Chapter5FundamentalsofLasers,6.1DefinitionofNonlinearOpticsNonlinearopticsisthestudyofphenomenathatoccurasaconsequenceofthemodificationoftheopticalpropertiesofamaterialsystembythepresenceoflight.Typically,onlylaserlightissufficientlyintensetomodifytheopticalpropertiesofamaterialsystem.,Chapter6NonlinearOptics,Chapter6NonlinearOptics,6.1DefinitionofNonlinearOptics,Chapter6NonlinearOptics,6.2HistoryofNonlinearOpticsTheformationofnonlinearopticsoriginatedintheearly1960s.From1970to1990,accompanyingwiththegreatsuccessesinlaserscienceandtechnology,manyneweffectswereexploited,includingtheopticalbistability(OBIS21),soliton22,squeezedstate23,etc.Since1990,theresearchinnonlinearopticalfieldhasbeencontinuouslydevelopingbothintheoreticalandapplicableaspects.,Chapter6NonlinearOptics,6.2HistoryofNonlinearOpticsThedevelopmentsinthepastnearlyfifthyearshaveprovedthatnonlinearopticsisasoexcitingandfruitfulresearchbrand,whichprovidesbigprogressinstudythematerialsandsystemsinvariousscientificfields.Itcanbeexpectedthatc