太阳能电池工段中英文简介

（1）制绒把原本平整的硅片腐蚀成具有微米大小尺寸的绒面构造，这样可以减少对光的反射，增加光吸收。In order to reduce the reflection of incident light for enhancing the conversion efficiency of solar cells, a texturing structure needs to be formed at the surface of the wafer by using chemical etching processing.（2）扩散通过磷扩散在P型硅衬底（硅片）上形成一厚度约为0.5微米的磷掺杂层，来形成p-n结。p-n结可以通过光伏效应将光能转换成电能。Phosphorus DiffusionIn silicon solar cell production typically from p-type substrates, it is necessary to form an n-type emitter to create the p-n junction for collecting the charge generated by the photos of light. Virtually, all n-type layers are produced via a phosphorous diffusion at high temperature in a furnace. The wafers are placed inside a quartz tube that is surrounded by heating elements. Phosphorous gases i.e. phosphorous oxychloride etc. are introduced into the tube and pass through the wafers so that a layer of phosphorous pentoxide is formed on the wafer surfaces. The following high temperature process drives the phosphorous into the surface areas of the wafers and a p-n junction is formed at the surface region.（3）去PSG在形成PN结的磷扩散过程中，硅片表面形成了一层磷硅玻璃，在太阳电池制造的后序工序开始之前有必要把这层磷硅玻璃除去，去除过程是由氢氟酸腐蚀和烘干的步骤组成。During the phosphorus diffusion for PN junction formation, a layer of silicate glass is coated at the surface of the wafers. It is necessary to remove the silicate glass before further processing for solar cells. The removal processing is composed of diluted HF etching and rinse.（4）利用等离子体增强化学气相沉淀技术在硅片表面形成一层7080纳米厚的氮化硅膜，来减少对入射光的反射，并对硅片表面缺陷进行钝化，增强电池性能。Coating of SiN for Passivation and Anti-reflection by PECVDPlasma enhanced chemical vapor deposition (PECVD) system is employed for the fabrication of silicon-nitride (SiN) layer. Besides as good anti-reflection coatings, the deposited SiN layers have excellent surface and bulk passivation properties, which are important for the reduction of minority carrier recombination.The system consists of an entry load-lock chamber, a preheating chamber, a deposition chamber with a linear remote plasma sources, a cooling chamber and an exit load-lock chamber, in which trays with 25 wafers are sequentially processed. The remote microwave plasma sources are very efficient in the conversion of the process gasses into SiN.（5）利用丝网印刷工艺，在制好的的p-n结的硅片上、下表面印刷相应的金属电极，来收集和传导光照后生成的光电流。Screening Printing for MetallizationFirstly, two stripes of aluminum-silver paste need to be screen-printed onto the rear of the wafer and dried in an oven for ensuring good conduction during later integration. Secondly, the wafers are deposited a layer of aluminum paste at the rear followed by a drying process for forming a backside field for good collection of photo-generated carriers. Finally, the silver fingers and busbars are printed at the front side of the wafers for good collection and conduction of the photo-generated carriers, while the shading loss of incident light can be maintained at minimum.（6）把丝网印刷好的金属电极烘干并烧穿，使金属电极和硅片上、下表面能够分别有很好的电接触。Firing-through for MetallizationIt is essential that the silver fingers printed onto the SiN film at the front surface of the wafer need to contact with the n-type diffused surface, and on the other side the aluminum coating printed at the rear of the wafers need to diffuse into the wafers to form backside field. The realization of the requirements is conducted by the co-firing of the printed patterns with an infrared belt furnace.（7）在标准测试条件下，将制造完成的太阳电池片用模拟