南邮半导体器件物理(双语)

1、acceptor doping受主杂质forbidden energy band禁带allowed energy band允带Hall effect霍尔效应ambipolar diffusion coefficient双极扩散系数high injection大注入ambipolar mobility双极迁移率hole空穴ambipolar transport双极输运input characteristic curve输入特征曲线ambipolar transport equation双极输运方程insulator绝缘体：atomic bond原子键intrinsic carrie本征载流子av

2、alanche breakdown雪崩击穿intrinsic Fermi level本征费米能级body-centered cubic lattice体心立方ion implantation离子注入boundary conditions边界条件ionic bond离子键boundary conditions边界条件jane distribution少子分布built-in potential barrier内建电势差/电场junction capacitance结电容/势垒电容carrier drift载流子漂移lattic晶格carrier generation载流子的产生lattice s

3、cattering晶格扩散carrier recombination载流子的复合Law of conservation of mass质量守恒定律charge neutrality电中性law of mass action质量作用定律compensated semiconductor补偿半导体liner graded junction线性缓变结complete ionization完全电离Low level injection小注入conductivity电导率Maxwell-Boltzmann approximation麦克斯韦-波尔兹曼近似contrast effect衬偏效应metal金

4、属covalent bond共价键metal-semiconductor contact金属半导体接触crystal晶体Miller indices密勒指数crystal impurity晶体杂质minority carrier diffusion length少子扩散长度crystal orientation 晶向mobility ratio迁移率cutoff frequency截止频率Nonequilibrium carrier非平衡载流子Degenerate and Non degenerate Semiconductors简并与非简并半导体Ohmic contact欧姆接触densit

5、y of states function状态密度函数one-sided junction单边突变结diamond lattice金刚石晶格onized impurity scattering电离杂质散射diffuse 扩散on-uniform doping非均匀参杂diffusion capacitance子扩散电容Pauli exclusion principle泡利不相容原理diffusion capacitance扩散电容photon光子donor doping施主杂质PN junction diodePN结二极管drift漂移quanta量子drift current漂移电流recom

6、bination rate复合drift velocity漂移速度recombination rate复合率Einsteins relation爱因斯坦关系式resistivity电阻率electron diffusion coefficient电子扩散系数rystal defect /imperfection晶体缺陷electron diffusion current电子扩散电流Schottky diode肖特基二极管electron effective mass电子有效质量semiconductor半导体Electronic source speed电子源物速度simple cubic简立

7、方晶格elemental semiconductor元素半导体substrate衬底epitaxial layer外延层surface states表面态Surface scattering表面散射equation of continuity连续性方程The semiconductor in equilibrium平衡半导体excess carriers过剩载流子The semiconductor in equilibrium 平衡半导体excess electrons过剩电子threshold voltage阈值电压excess holes过剩空穴trans conductance跨导excess minority carrier lifetime过剩少子寿命until cell单胞extrinsic semiconductor非本征半导体varactor diode变容二极管face-centered cubic面心立方velocity saturation饱和速度Fermi energy费米