光刻胶工序原理及其控制要点(Photolithography)ppt课件

1、Photolithography,Understanding more about the process,Prepared By: Nester,Content,Photolithography Introduction Photo Resist Property Alignment NA 0.54 (conv. illume.) PEB 110C, 60 sec; development AZ 300MIF, 60 sec,Dry Etch Behavior Of Novolak Resists,Selectivity Vs. Fluorine Etch,After etching,Cal

2、culation Method,Dry Resist,Resolution: 20um 5um,Wet Resist,Resist Status,Adhesion: 30um 5um,1. Adhesion ( Wet Dry) Relate to the substrate surface , Resist type & Process 2. Resolution: (CD) Dry resist: 23um Wet resist: 0.5um 3. Phototonus Exposure energy Soft baking condition 4. Dimension Stepper(A

3、ligner) performance,Soft-baking vs. Focus (AZP4620 15um,Alignment & Exposure,光学,非光学,接触式,接近式,投影式,步进式,射线,电子束,光刻机类型,Exposure Machine Category,Contact Printing,1. Advantage 1) High resolution by low diffraction effects 2) Simple & low price. 2. Disadvantage Chip defect (damage resist & mask,3. Resolutio

4、n: X = K/NA UV Wavelength: K 0.6 0.8 NA(Number aperture):0.40.5,Proximity Printing,1. Advantage No chip defect 2. Disadvantage low resolution by high diffraction effects 3. Improvement method Decrease exp. Wavelength (X-ray of 12nm,Projection Printing,Advantage No chip defect & high resolution & sho

5、rt cycletime,Focus-Exposure (FE) Matrix,AZ7900 i-line resist FT 0.748 m thick on 1920 BARLi, SB 90C/90 sec, Exposure Canon 3000i4, NA 0.63 / 0.65, PEB 110C/60 sec, Dev 65sec single puddle 300MIF,X ray Printing,1. Advantage 1) High resolution by much lower diffraction effects (Wave length 10) 2. Disadvantage 1) X ray no parallel light 2) High price (MC/Mask) 3) Low productivity,Electron Printing,1. Advantage 1) High resolution by much lower diffraction effects (Wave length 0.1nm) 2) High precise 2. Disadvantage 1) Depend on sub