SI1305DL-T1中文资料

1、SI1305DL-T1中文资料FEATURESD TrenchFET rPower MOSFET: 1.8 V RatedRoHSCOMPLIANTSi1305DLVishay SiliconixDocument Number: 71076S-51075Rev. D, 13-Jun-051P-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYV DS (V)r DS(on) (W )I D (A)0.280 V GS = ?4.5 V?0.92?80.380 VGS = ?2.5 V ?0.790.530 V GS = ?1.8 V?0.67Marking Co

2、deLBXXLot Traceability and Date CodePart # CodeY YOrdering Information: Si1305DL-T1Si1305DL-T1E3 (Lead (Pb)-Free)SOT-323SC-70 (3-LEADS)Top ViewGS DABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol5 secs Steady StateUnitDrain-Source Voltage V DS ?8Gate-Source VoltageV GS 8VT

3、 A = 25_C ?0.92?0.86Continuous Drain Current (T J = 150_C)a T A = 70_CI D ?0.74?0.69Pulsed Drain CurrentI DM ?3AContinuous Diode Current (Diode Conduction)a I S ?0.28?0.24Maximum Power Dissipation T A = 25_C 0.340.29aT A = 70_C P D 0.220.19W Operating Junction and Storage Temperature RangeT J , T st

4、g?55 to 150_CTHERMAL RESISTANCE RATINGSParameterSymbol TypicalMaximumUnitM iJ ti t A bi t t v 5 sec 315375Maximum Junction-to-Ambient a Steady State R thJA 360430_Maximum Junction-to-Foot (Drain)Steady StateR thJF285340C/WNotesa.Surface Mounted on 1” x 1” FR4 Board.Si1305DLVishay Siliconix2Document

5、Number: 71076S-51075Rev. D, 13-Jun-05SPECIFICATIONS (T J = 25_C UNLESS OTHERWISE NOTED)ParameterSymbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V GS(th)V DS = V GS , I D = ?250 m A ?0.45V Gate-Body LeakageI GSS V DS = 0 V, V GS = 8 V 100nAV DS = ?8 V, V GS = 0 V ?1Zero Gate Voltag

6、e Drain Current I DSS V DS = ?8 V, V GS = 0 V, T J = 70_C?5m A On-State Drain Current aI D(on)V DS = ?5 V, V GS = ?4.5 V ?3AV GS = ?4.5 V, I D = ?1 A0.2300.280Drain-Source On-State Resistance ar V GS = ?2.5 V, I D = ?0.5 A 0.3150.380WDS(on)V GS = ?1.8 V, I D = ?0.3 A0.4400.530Forward Transconductanc

7、e a g fs V DS = ?5 V, I D = ?1 A 3.5S Diode Forward Voltage aV SDI S = ?0.3 A, V GS = 0 V?1.2V Dynamic bTotal Gate Charge Q g 2.64Gate-Source Charge Q gs V DS = ?4 V, V GS = ?4.5 V, I D = ?1 A0.6nCGate-Drain Charge Q gd 0.5Turn-On Delay Time t d(on)815Rise Timet r V 5580Turn-Off Delay Time t d(off)D

8、D = ?4 V, R L = 4 WI D ?1 A, V GEN = ?4.5 V, R g = 6 W 1725nsFall Timet f 1220Source-Drain Reverse Recovery Timet rrI F = ?1 A, di/dt = 100 A/m s 2745Notesa.Pulse test; pulse width v 300 m s, duty cycle v 2%.b.Guaranteed by design, not subject to production testing.Stresses beyond those listed under

9、 “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating co

10、nditions for extended periods may affect device reliability.TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)01234560.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0024680.00.51.01.52.02.53.0Output CharacteristicsV DS ? Drain-to-Source Voltage (V)? D r a i n C u r r e n t (A )I D V GS ? Gate-to-Source Voltage (V)? D r a

11、 i n C u r r e n t (A )I DSi1305DLVishay SiliconixDocument Number: 71076S-51075Rev. D, 13-Jun-0530.00.20.40.60.8 1.0 1.2 24680.00.40.81.21.6?50?25025507510012515002468 1234 1234567V DS ? Drain-to-Source Voltage (V)I D ? Drain Current (A)Gate Charge? G a t e -t o -S o u r c e V o l t a g e (V )Q g ?

12、Total Gate Charge (nC)V G S On-Resistance vs. Junction Temperature0.00.20.40.60.81.00.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.51010.001Source-Drain Diode Forward Voltage? O n -R e s i s t a n c e (r D S (o n )W )V SD ? Source-to-Drain Voltage (V)V GS ? Gate-to-Source Voltage (V)? S o u r c e C u r r e n

13、t (A )I S 0.10.01r D S (o n ) ? O n -R e s i i s t a n c e (N o r m a l i z e d )4Document Number: 71076S-51075Rev. D, 13-Jun-05210.10.01N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eVishay Siliconix maintains worldwide manufacturing capability. Products may

14、be manufactured at one of several qualified locations. Reliability data for Silicon T echnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: 91000Revision: 18-Ju

15、l-081DisclaimerLegal Disclaimer NoticeVishay All product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any er

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