GPP制程简介-双面光刻

1、GPP Process Introduction (Pt & SIPOS)GPP制程简介制程简介Std GPP Process FlowWafer CleanBoron DiffusionGrid EtchingPR StripSIPOS & MTO2nd Photo1st Ni PlatingNi Sintering2nd Ni PlatingAu PlatingPG Burn offGlass FiringLTO3rd PhotoPG CoatingRCA CleanPR StripContact EtchNon SIPOSPhos. Pre-DepHF SoakSand Blasting

2、Pt DiffusionSand Blasting1st PhotoWafer Clean (晶片清洗晶片清洗)NPhos. Pre-Deposition ( 磷預沉積磷預沉積 )N晶片N+磷Sand Blasting (吹砂吹砂)N晶片N+磷在此面吹砂Boron Diffusion (硼硼擴散擴散 )N晶片N+P+磷硼Sand Blasting (吹砂吹砂)N晶片N+P+磷硼单面吹砂Pt Diffusion (铂擴铂擴)N晶片N+P+磷硼Pt铂Sand Blasting (吹砂吹砂)N晶片N+P+磷硼雙面吹砂1st Photo (一次黃光一次黃光双面光刻双面光刻)晶片NN+P+光阻光阻开槽去

3、背面标记线SB-402BG-403/SGrid Pre-Etching (溝槽溝槽标记标记预预蝕刻蝕刻)晶片NN+P+光阻Pr-Coating (背面涂胶背面涂胶)晶片NN+P+光阻补光阻保护Grid Etching (溝槽溝槽蝕刻蝕刻)晶片NN+P+光阻PR Strip (光阻去除光阻去除)NN+P+RCA Clean (RCA 清洗清洗)晶片NN+P+SIPOS & MTO (SIPOS沉積沉積)晶片NN+P+SIPOSSIPOS2nd Photo (2次黃光次黃光)NN+P+SIPOSSIPOSPGBG-401A(高光强型)或 BG-401ABG-403或 BG-401ABG-401A(

4、高光强型)或 BG-401ABG-403BG-401A(高光强型)或 BG-401APG Development (PG显影显影)NN+P+SIPOSSIPOSPGGlass Firing (玻璃燒結玻璃燒結)NN+P+SIPOSSIPOSGlassLTO (低溫氧化層沉積低溫氧化層沉積)NN+P+SIPOSSIPOSGlassSiO23rd Photo (三次黃光三次黃光)NN+P+SIPOSSIPOSGlassSiO2PRBG-403或 BG-401ABG-401A(高光强型)Contact Etch (接觸面蝕刻接觸面蝕刻)NN+P+SIPOSGlassSiO2PRPR Strip (光阻去除光阻去除)NN+P+SIPOSGlassSiO21st Ni Plating (一次鍍鎳一次鍍鎳)NN+P+SIPOSGlassSiO2NiNi Sintering (鎳燒結鎳燒結)NN+P+SIPOSGlassSiO2Ni2nd Ni Plating (二次鍍鎳二次鍍鎳)NN+P+SIPOSGlassSiO2NiGold Plating