Infineon cool MOSFET产品技术推测

1、History of CoolMOS Product from S5 to C6/E6 & CFD2S5 series: the first series of CoolMOS, market entry in 1998 slow switching, close to conventional MOSFET, Vth 4.5 V, Gfs low, Rg high design-in in high power SMPS onlyC3 series: the third series of CoolMOS, market entry in 2001 the working horse“ of

2、 the portfolio, fast switching, symmetrical rise/fall time 10 V Vgs, Vth 3 V, Rg very low design-in into all CoolMOS segmentsCFD series: the fourth series of CoolMOS, market entry in 2004, fast body diode, Qrr 1/10th of C3 series, Vth 4 V, Rg low specific for phase-shift ZVS and DC/AC power applicat

3、ionsCP series: the fifth series of CoolMOS, market entry in 2005, ultra low Rdson, ultra low gate charge, very fast switching Vth 3 V, internal Rg very lowC6/E6 series: launched in 2009 and 2010 respectively as the sixth CoolMOS technology is planned to be the successor of C3CFD2 series: the first 6

4、50 V superjunction technology with integrated fast body diode on the market and Significant Qg reduction compared to previous CFD technologyThe choice of cool MOS in Soft-switching/Hard-switching applicationResonant topologiesHard switching topologiesCFD2CFDResonant topologiesResonant topologiesHard

5、 switching topologiesHard switching topologies199 m660 m3000 mServer, Telecom, Solar, UPSPC Power, Adapter, LCD/PDPLighting, AdapterCFD2C6C6CPC6C3CPC3CFDRdsON mCPC320092011yearCFD2ACFD2ACP technology is recommended forhard switching.CFD2 technology isrecommended forsoft switching.CFD2A series is aut

6、omotivequalified parts.C6/E6 technologyis usable for hardand soft switching 备注：Infineon cool MOSFET产品另两款产品E6（与C6同一技术，但Rg较小）和CFD2（对比CFD主要改善了Qg）！第一代为S5/C2，采用7层外延，比电阻为33mcm第二代为C3，采用6层外延，比电阻为33mcm第三代为CS/CP，采用7层外延，cell pitch减小，比电阻为25mcm第三代为CS/CP，采用7层外延，比电阻降为25mcm（cell pitch由15um降为11.5um）固定BV和Q，随着cell pit

7、ch减小，电阻减小CFD技术CFD相对C3，导通电阻略有增加，动态性能由于采用寿命控制技术而更优！技术上吸收CP系列通过调整外延减小Cell pitch改善比电阻（比电阻降为25mcm ）；Qg比C3系列略有下降，仍大于CP系列，推测C6沿用C3系列的六角版图布局；Eoss和Qrr减小，推测采用的寿命控制技术C6系列技术系列技术MOSFET Rg影响动态性能C6系列采用了内置电阻，而且随着电阻的减小，内置电阻减小C6系列技术系列技术650V CoolMOS CFD2 Features & BenefitsFEATURES & BENEFITSFirst 650V HV MOS technolo

8、gy with integrated fast body diode on the marketLimited voltage overshoot during hard commutation - self limiting di/dt and dv/dtTighter Rdson max to Rdson typ windowLow switching losses due to low Qrr at repetitive commutation on body diodeLow QossReduced turn on and turn off delay timesEasy to des

9、ign inMain Differences Between CFD and CFD2CFD2 is a 650V class MOSFET (CFD is 600V)Better light load efficiency due to reduced gate chargeSofter commutation behavior and therefore better EMI behaviorCFD2 offers customers a new cost down roadmapCFD: fast switching of voltage or current i.e. di/dt or

10、 dv/dt(main causes of EMI)CFD2: softer commutation reduces this problem saving customer time and money in designing in the partReduction of Qg 650V CFD2The 650V CFD2 has about 30% lower Qg in all RDS(on) classes compared to 600V CFD.Infineon技术发展路线1998年第一代为S5/C2，采用7层外延，比电阻为33mcm2001年第二代为C3，采用6层外延，比电阻为33mcm2005年第四代为CS/CP，采用7层外延，cell pitch减小，比电阻降为为25mcm；同时版图拓扑采用减小Cgd的设计2004年第三代为CFD，导通比电阻与C3系列相当，但采用寿命控制技术提高器件的动态性能；2009年推出C6/E6系列：Qg比C3系列略有下降，仍大于CP系列，推测C6沿用C3系列的六角版图布局；技术上吸收CP系列通过调整外延减小Cell pitch改善比电阻（比电阻降为25mcm ）；Eoss和Qrr减小，推测吸收采用CFD系列的寿命控制技术；C6/E6系列采用了内置栅极电阻，Rg随着Rdson减小而减小，稳定动态特性；1