CNM烈度计开发

1、haga clic para modificar el estilo de texto del patrnsi sensor developmentsat cnmmanuel lozanoilc meeting. santander, january 2008si sensor development at cnm manuel lozanoradiation detector grouppstarted in 1996pmain activities:nradiation detector developmentnradiation effects in materials, devices

2、 and circuitsnpackagingnmedical imagingp11 people pmore researchers at cnm from other department joining radiation detector activitiesncircuit designndevice developmentnsimulationilc meeting. santander, january 2008si sensor development at cnm manuel lozanocnm clean room expansionpfrom 1000 to 1500

3、m2pnew are for nanotechnologypnew set of equipment relevant for advanced packagingnwafer grinderncmpnwafer alignment and bonding systemifcailc meeting. santander, january 2008si sensor development at cnm manuel lozanoir transparent detectorspdevelopment of strip detectors transparent to ir for direc

4、t alignmentpin collaboration with ifcapnew process run for material characterization already startedpdetectors manufactured this yearifcailc meeting. santander, january 2008si sensor development at cnm manuel lozano3d technologypdue to the low field problem of single sided 3d detectors, cnm decided

5、to develop a two-side 3d technology.pin collaboration with glasgow university that are doing the simulationspnew mask set designedptechnology developedpfirst wafers already finished, only n-type, good results.p2nd and 3rd process runs started, n-type and p-typepvery interesting for lhc pixels, very

6、high radiation hardness. useful for lc?ilc meeting. santander, january 2008si sensor development at cnm manuel lozano3d technologypschematic technology cross sectionpassivationn+ doped55um pitch50-0um300-250ump-type substrate p+ doped10umoxide0.4um1ump+ dopedmetalpoly 3umoxidemetalp-stop p+50-0umteo

7、s 2um5umhigh resistivitysemiconductorpixel readoutelectronics chipsolder bumppnnilc meeting. santander, january 2008si sensor development at cnm manuel lozanomedipix2 pixel configurationpolysilicon contactopening in the passivationp-type holemetalilc meeting. santander, january 2008si sensor develop

8、ment at cnm manuel lozanoholes filled with poly and dopedholes: 240um deepdoped polysilicon at the bottom of the holeilc meeting. santander, january 2008si sensor development at cnm manuel lozanosem images of top part of holespolysilicon layercolumnar electrodemetal trackpolysilicon contactilc meeti

9、ng. santander, january 2008si sensor development at cnm manuel lozanoalibava: a readout system for microstrip silicon sensorspjoint development of liverpool univ., ific-valencia and cnm-barcelonapneed of a simple and cheap system for detector charge collection performance characterizationpdifficulty

10、 for obtaining this type of measurements:nrequired equipment is expensivena large number of channels has to be monitored nmany different approaches: nim, camac, vme or custom electronic moduleptesting with an electronic system as similar as possible to those used at lhc experiments:nlhc front end re

11、adout chip should be usedpanalog readout is preferred for pulse shape reconstructionilc meeting. santander, january 2008si sensor development at cnm manuel lozanosystem characteristicspthe system is compact and portable.ptwo triggering options:nexternal trigger input from one or two photomultipliers

12、 (radioactive source).nsynchronized external trigger output for pulsing an external excitation source (laser system).puses one or two front-end readout chips (beetle, lhcb) to acquire the detector signalspcommunicates with a pc via usb, pthe system is controlled from a pc application in communicatio

13、n with a fpga which interpret and execute the orders.pit has its own power supply system, from ac mains (not hv).motherboardtest box” (db + fanins + detector)ilc meeting. santander, january 2008si sensor development at cnm manuel lozanoedgeless detectorsprie cut trenches reduces inactive detector ar

14、ea due to guard ringsnwith trenches and saw cut, we estimate inactive are in the order of 100 mnusing current terminating ring (ctr) to collect current, as small as 25 mpimportant for detector tilingstripsguard ringcurrent terminating ring25milc meeting. santander, january 2008si sensor development

15、at cnm manuel lozanopackaging possibilitiespin collaboration with ifaeptechniquesnsmdnwirebondingnflipchipp standard temperaturesp high temperatures: 280cpinterest in 3d packagingpequipmentndek248 screen printernatv reflow oven with vacuumnmanual pick&place machinepdatacon 2200 pps for fine pitc

16、h (ifae)nnext month installation in a separate clean roomilc meeting. santander, january 2008si sensor development at cnm manuel lozanofuture activitiespstart some activities in apdspsimulation of device operation for device optimizationpin collaboration with ific, ub, urlpwe are considering the pos

17、sibility of manufacture apds (only devices) in our clean roomnwe can benefit from deep silicon etching capabilitypwe are not able to manufacture depfets (due to buried layer)ilc meeting. santander, january 2008si sensor development at cnm manuel lozanofinal remarkspwe can manufacture detectors for the ilc coll