【精品】微电子学专业词汇

1、abe absorb in集中精力做某事 access control list 访问控制表 active attack主动攻击 activex control activex 控件 advanced encryption st andardaes,髙级加密标准algorithm 算法alteration of message 改变消息 application level attack 应用层 攻击argument 变量asymmetric key cryptography 非对称密钥加密attribute certificate 属性证书 authentication 鉴别authority

2、 机构 availability 可用性abrupt junction 突变结 accelerated testing 加速实验 acceptor 受主acceptor atom受主原子accumulation 积累、堆积accumulating contact 积累接触 accumulation region 积累区 accumulation layer 积累层 active region 有源区active component 有源元active device冇源器件activation 激活activation energy 激活能 active region有源(放大)区 admitt

3、ance 导纳allowed band 允带 alloy-junction device 合金结器 件aluminum (aluminium) 铝 aluminum 一 oxide 铝氧化物 aluminum passivation 铝钝化 ambipolar双极的ambient temperature 环境温度 amorphous无定形的，非晶体的 amplifier功放扩音器放大器analogueanalog) comparator模拟比较器angstrom 埃anneal退火anisotropic各向异性的anode阳极arsenic (as) fi申auger俄歇auger proce

4、ss俄歇过程avalanche 雪崩avalanche breakdown 雪崩击穿avalanche excitation 雪崩激发bbrute-force attack 强力攻击 background carrier 木底载流子 background doping 本底掺杂 backward 反向backward bias反向偏置ballasting resistor 整流电阻ball bond球形键合band能带band gap能带间隙barrier 势垒barrier layer 势垒层barrier width势垒宽度base基极base contact基区接触base stretc

5、hing基区扩展效应base transit time基区渡越时间base transport efficiency 基区 输运系数base-width modulation 基区宽 度调制basis vector基矢bias偏置bilateral switch 双向开关binary code二进制代码binarycompoundsemiconductor二元化合物半导 体bipolar双极性的bipolar junction transistor (bjt) 双极晶体管bloch布洛赫blocking band阻挡能带blocking contact 阻挡接触bodycentered体心立方

6、 body-centred cubic structure 体立心结构boltzmann波尔兹曼bond键、键合bonding electron 价电子 bonding pad 键合点 boot strap circuit 自举电路 bootstrapped emitter follower 自举射极跟随器boron 硼borosilicate glass 硼硅玻璃 boundary condition 边界条件 bound electron 束缚电子 breadboard模拟板、实验板 break down 击穿break over 转折 brillouin布里渊brillouin zone

7、 布里渊区built-in内建的build-in electric field 内建电场bulk体/体内bulk absorption 体吸收bulk generation 体产生bulk recombination 体复合 burnin老化burn out 烧毁buried channel 埋沟buried diffusion region 隐埋扩 散区 ccaesar cipher凯撒加密法 capacitanee 电容 capture categorize 分类 chaining mode链接模式 challenge 质洵 cipher feedback 加密反馈 collision 冲

8、突 combine 集成 compatibility n.计兼容性 component 原件 confidentiality 保密性 constraint 约束corresponding to 和应的close-packed structure 密堆积constant-source diffusion 恒定cryptography 密码学结构源扩散can 外壳 capacitance 电容close-loop gain 闭环增益contact 接 触 contaminationcapture cross section 俘获截面collector集电极治污capture carrier俘获载流

9、子collision 碰撞continuity equation 连续性方程carrier载流子、载波compensated op-amp 补偿运contact hole 接触孔carry bit进位位放contact potential 接触电势carry-in bit进位输入comm on base/ collector/emittcontinuity condition 连续性条件carry-out bit进位输出er connection共基极/集电极contra doping 反掺杂cascade 级联/发射极连接controlled 受控的case管壳com mon-gat e/d

10、 rain/sourceconverter转换器cathode 阴极connection共栅/漏/源连接conveyer传输器center中心common-mode gain 共模增益copper interconnection systemceramic陶瓷(的)common-mode input 共模输入铜互连系统channel 沟道comm on mode reject io n ratiocouping 耦合channel breakdown 沟道击穿(cmrr)共模抑制比covalent共阶的channel current 沟道电流compatibility 兼容性crossover

11、 跨交channel doping 沟道掺杂compensation 补偿critical临界的channel shortening 沟道缩矩compensated impurities 补偿crossunder 穿交channel width沟道宽度杂质crucible，甘埸characteristic impedance 特征compensated semiconductorcrystal阻抗补偿半导体defect/face/ orie ntation/latticecharge电荷、充电compleme nt arydarlington晶体缺陷/晶面/晶向/晶格charge-compe

12、n sat ion effectscircuit互补达林顿电路current density 电流密度电荷补偿效应complementarycurvature 曲率charge conservation 电荷守恒met al-oxide-semiconductorcut off截止charge neutrality condition 电field-effect-transistor( cmos)cur re nt drift/dirve/sharing 电中性条件互补金屈氧化物半导体场效应晶体流漂移/驱动/共享charge管current sense电流取样drive/exchange/sh

13、ari ng/transfcomplementary error functioncurvature 弯曲er/storage电荷驱动/交换/余误差函数custom integrated circuit 定制共享/转移/存储compo und semic on ductor 化集成电路cylindrical柱面的chemmical etching 化学腐蚀法介物半导体conductance电导czochralshicrystal 直立单晶chemically-polish 化学抛光conduction band (edge) 导带czochralski technique 切克劳斯chem m

14、ically-mecha ni cally( 底 )conduction level/state基技术(cz法直拉晶体j )polish (cmp)化学机械抛光导带态dchip芯片conductor 导体dedicate专用的，单一的chip yield芯片成品率conductivity 电导率denial of service(dos)拒绝服务clamped 箝位configuration 组态攻击clamping diode 箝位二极管conlomb 库仑diffusion 扩散cleavage plane 解理而con pled con figuration devicesdigital

15、 signature algorithm 数clock rate时钟频率结构纽态constants物理常数字签名算法clock generator时钟发生器constant energy surface 等能dynamic动态的clock flip-flop时钟触发器面dangling bonds 悬挂键dark current 暗电流dead time空载时间debye length徳拜长度de.broglie徳布洛总decderate 减速decibel (db)分贝decode译码deep acceptor level 深受主能级deep donor level深施卞能级deep imp

16、urity level 深度杂质能 级deep trap深陷阱defeat缺陷degenerate semic on ductor 简 并半导体degeneracy简并度 degradation 退化degree celsius(centigrade)/kelvin摄氏/开氏温度delay延迟density 密度density of states 态密度depletion 耗尽depletion approximation 耗尽 近似depletion contact 耗尽接触depletion depth 耗尽深度depletion effect 耗尽效应depletion layer 耗尽

17、层depletion mos 耗尽 mosdepletion region 耗尽区deposited film 淀积薄膜deposition process 淀衫工艺design rules设计规则die芯片(复数dice )diode二极管dielectric 介电的dielectric isolation 介质隔离difference-mode input 差模输 入differential amplifier 差分放大 器differential capacitance 微分电 容diffused junction 扩散结diffusion 扩散diffusion coefficient

18、 扩散系数diffusion constant 扩散常数diffusivity 扩散率diffusioncapacitance/barrier/curre nt/fu mace扩散电容/势垒/电流/ 炉digital circuit 数字电路dipole domain 偶极畴dipole layer 偶极层direct-coupling 直接耦合direct-gap semic on ductor 直接 带隙半导体direct transition 直接跃迁discharge 放电discrete component 分立元件dissipation 耗散distribution 分布distr

19、ibuted capacitance 分布电 容istributed model 分布模型displacement 位移dislocation 位错domain 畴donor施主donor exhaustion 施主耗尽dopant掺杂剂doped semic on ductor 掺杂半导 体oping concerntration 掺杂浓度double-diffusive mos( dmos) 双扩散mos. drift漂移drift field漂移电场drift mobility 迁移率dry etching干法腐蚀dry/wet oxidation 干 / 湿法氧 化dose剂量duty

20、 cycle工作周期dual-in-line package ( dip ) 双列巨插式封装dynamics 动态dynamic characteristics 动态属 性dynamic impedance 动态阻抗eexpertise 专长 extractorearly effect尼利效应early failure早期失效effective mass 有效质量einstein relation(ship)爱因斯坦 关系electric erase programmableread only memory(e2prom) 一次性电可擦除只读存储器electrode 电极electroming

21、gratim 电迁移electron affinity 电子亲和势electronic -grade 电子能electro beam photo-resist exposure光致抗蚀剂的电子束曝 光electron gas 电子气 electron-grade water 电子级纯 水electron trapping center 电子俘 获中心 electron volt (ev)电子 伏electrostatic i挣电的element元素/元件/配件elemental semic on ductor 元素 半导体ellipse椭圆ellipsoid 椭球emitter发射极emitt

22、er-coupled logic 发射极耦 合逻辑 emitter-coupled pair 发 射极耦合对emitter follower 射随器empty band 空带emitter crowding effect 发射极 集边(拥挤)效应endurance test =life test 寿命测试energy state 能态energy momentum diagram 能 就-动戢(ek)图 enhancement modefield oxide场氧化层h増强型模式filled band 满带handle处理enhancement mos 増强性film薄膜hierarchical

23、 层次mos entefic (低)共溶的flash memory闪烁存储器hardened device辐射加固器件environmental test 环境测试flat band 平带heat of formation 形成热epitaxial外延的flat pack扁平封装heat sink散热器、热沉epitaxial layer 外延层flicker noise闪烁（变）噪声heavy/light hole band 重/轻空epitaxial slice 外延片flip-flop toggle触发器翻转穴带expitaxy夕卜延floating gate 浮栅heavy sat u

24、 rat io n 重掺杂equivalent curcuit 等效电路fluoride etch氟化氢刻蚀hell - effect霍尔效应equilibrium majority /minorityforbidden band 禁带heterojunction 并质结carriers平衡命数/少数载流子forward bias正向偏置heterojunction structure 异质erasable programmable romforward blocking /conducting结结构（eprom）可搽取（编程）存储器正向阻断/导通heterojunctio nbipolare

25、rror function complement 余frequency deviation noise 频率transistor ( hbt )异质结双极误差函数漂移噪声型晶体etch刻蚀frequency response 频率响应high field property 高场特性etchant刻蚀剂function 函数high-performanceetching mask抗蚀剂掩模gmos.( h-mos)高性能 mos.excess carrier过剩载流子gridhormalized 归一化excitation energy 激发能gain增益horiz on tai epitaxi

26、al reactor 卧excited state 激发态gallium-arsenide(gaas) 側 化式外延反应器exciton 激子钾hot carrior热载流子extrapolation 外推法gamy ray r 射线hybrid integration 混合集成extrinsic非本征的gate门、栅、控制极1extrinsic semiconductor 弘!?质半gate oxide栅侃化层implement导体gauss ( ian )高斯inductanee 电感fgaussian distribution profile 高initialization vector

27、iv 初炸”七fabrication 伪适斯掺杂分布向戢fleshed outgeneratio recombinatio n 产integrity完整性facecentered面心立方生-复合interception 截获fall time下降时间geometries几何尺寸interruption 中断fan-in扇入germanium(ge)褚1 mageforce镜象力fan-out 扇出graded缓变的1 mpact ionization 碰撞电离fast recovery 快恢复graded (gradual) channel 缓变1 mpedanee 阻抗fast surfac

28、e states 快界面态沟道1 mperfect structure 不完整结构feedback 反馈graded junction 缓变结1 mplantation dose 注入剂量fermi level费米能级grain晶粒1 mplanted ion注入离子fermi-dirac distribution 费米-gradient 梯度impurity 朵质狄拉克布grown junction 生长结impurity scattering 朵志散射femi potential 费米势guard ring保护环in cremental resista nee 电阻增fick equati

29、on菲克方程（扩散）gummel-poom model 葛谋 量（微分电阻）field effect transistor 场效应晶潘模型1 n-contact mask接触式掩模体管gunneffect狄氏效应1 ndium tin oxide (ito)俐锡氧化物induced channel感应沟道infrared红外的injection 注入input offset voltage 输入失调电 压insulator绝缘体insulated gate fet(igfet)绝缘栅fet integrated injection logic集成注入逻辑integration集成、积分inte

30、rconnection 互连interconnection time delay 互连延时interdigitated structure 交互式结构interface 界面i nterferenee涉inter national system of unions国际单位制internally scattering 谷间散射interpolation 内插法i ntrinsic本征的intrinsic semiconductor 本征半 导体 in verse operatio n 反向工 作inversion 反型inverter倒相器ion离子ion beam离子束ion etching离

31、子刻蚀ion implantation 离子注入ionization 电离lonization energy 电离能irradiation 辐照isolation land 隔离岛isotropic各向同性jjava applet java 小程序junction fet(jfet)结型场效应 管junction isolation 结隔离junction spacing 结间距junction side-wall 结侧壁key wrapping密钥包装llatch up 闭锁lateral横向的lattice 晶格layout版图latticebindin g/cell/ con st a

32、nt/defect/di stortion晶格结合力/晶胞/晶 格/晶格常熟/晶格缺陷/晶格 畸变leakage current (泄)漏电流level shifting 电平移动life time 寿命linearity线性度linked bond 共价键liquid nitrogen 液氮liquid phase epitaxial growth technique液相外延生长 技术lithography 光刻light emitting diode(led)发光二极管load line or variable 负载线locating and wiring 布局布线longitudinal

33、 纵向的logic swing逻辑摆幅lorentz洛沦兹lumped model集总模型mmasquerade 伪装message digest 消息摘要 modification 修改multidrop多站,多支路majority carrier命数载流子mask掩膜板，光刻板mask level掩模序号mask set掩模组massaction law质量守恒定律master-slave d flip-flop 主从 d 触发器matchi ng 匹配maxweli麦克斯韦mean free path 平均口 出程 meandered emitter junction 梳 状发射极结me

34、an time before failure (mtbf) 平均工作时间megeto - resistance 磁阻mesa台面mesfet-metal semiconductor 金属半导体fetmetallization 金属化 microelectronic technique 微电 子技术microelectronics 微电子学 millen indices 密勒指数minority carrier少数载流子 misfit失配mismatching 失配mobile ions可动离子mobility迁移率module模块modulate 调制molecular crystal 分子晶

35、体monolithic ic 单片 icmosfet金属氧化物半导体场效 应晶体管mos. transistor(most )mos 晶体管multiplication倍增modulator 调制multi-chip ic 多芯片 ic multi-chip module(mcm)多芯 片模块 multiplication coefficient 倍增因予nnetwork level attack 网络层攻击 nonrepudiation 彳kf抵赖 naked chip未封装的芯片(裸片) negative feedback 负反馈 negative resista nee 负阻 nesti

36、ng 套刻 negative-temperature-coeffici ent负温度系数noise margin噪声容限 nonequilibrium 非平衡nonrolatile非挥发（易失性partition 简明英汉词典n.分割,planar process 平而匸艺normally off/on 常闭 / 开划分，瓜分，分开，隔离物vt.区分，planar transistor 平面晶体管numerical analysis 数值分析隔开，分割plasma等离子体0presentation n介绍，陈述，赠送，piezoelectric effect 压电效应optimize使最优化表

37、达poisson equation 泊松方程occupied band 满带primitivepoint contact 点接触officienay 功率privatepolarity 极性offset偏移、失调probablypolycrystal 多晶on standby待命状态proceedingpolymer semic on ductor 聚合物ohmic contact欧姆接触prof ound半导体open circuit 开路propertypoly-silicon 筋晶硅operating point 工作点pseudocollision 伪冲突potential (电)势

38、potentialoperating bias 工作偏置package 封装barrier 势垒operational amplifier (opamp)pad压焊点potential well 势阱运算放大器parameter 参数power dissipation 功耗optical photon = photon 光子parasitic effect 寄生效应power transistor功率晶体管optical quenching 光猝灭parasitic oscillation 寄生振荡preamplifier前置放人器optical transition 光跃迁passinati

39、on 钝化primary flat 主平面optical-coupled isolator 光耦合passive comp on ent 无源元件principal axes 主轴隔离器passive device 无源器件print-circuit board(pcb)卬制电orga nic semic on ductor 有机半passive surface 钝化界而路板导体parasitic transistor 寄生晶体管probability 儿率orientation晶向.定向peak-point voltage 峰点电压probe探针outline 外形peak voltage峰

40、值电圧process 工艺out-of-contact mask 非接触式permanentstorage circuit 永久propagation delay 传输延时掩模存储电路pseudopotential method 膺 势output characteristic 输出特性period周期发output voltage swing 输出电压periodic table 周期表punch through 穿通摆幅permeable base可渗透基区pulse triggering/modulating 脉overcompensation 过补偿phase-lock loop 锁相

41、环冲触发/调制over-current protection 过流保phase drift 相移pulse widen modulator(pwm)护pho non spectra 声子谱脉冲宽度调制over shoot 过冲photo conduction 光电导punchthrough 穿通over-voltage protection 过hi保photo diode光电二极管push-pull stage 推挽级护photoelectric cell 光电池qoverlap 交迭photoelectric effect 光电效应quality factor 品质因子overload 过载

42、photoenic devices 光子器件quantization 量子化oscillator 振荡器photolithographic process 光亥ijquantum 星子oxide氧化物工艺quantum efficiency 量子效应oxidation 氧化(photo) resist (光敏)抗腐蚀剂quantum mechanics 子力学oxide passivation 氧化层钝化pin管脚quasi 一 fermi level 准费米ppinch off 夹断能级parallelpinning of fermi level 费米能级quartz石英parasitic寄

43、生的的钉扎（效应）rrelease of message contents 发布消息内容register寄存器reverse bias反向偏置sscratchshunt分流sidewall capacitanee 边墙电容signal信号registration注册，报到，登记scratchpad 缓存silica glass石英玻璃resista nee 电阻secret密钥silicon 硅routi ngsubstrate 衬底silicon carbide 碳化硅running key cipher 运动密钥加synchr onizesilicon dioxide (sio2)二氧化硅

44、密法synthesizesilicon nitride(si3n4)氮化硅radiation conductivity 辐射电导symmetric key cryptographysilicon on 1 nsulator 绝缘硅率对称密钥加密siliver whiskers 银须radiation damage 辐射损伤sophisticate 复杂的simple cubic 简立方radiation flux density 辐射通量suspend悬挂，延缓single crystal 单晶密度sampling circuit 取样电路sink 沉radiation hardening 辐

45、射加固sapphire 蓝宝石(al203 )skin effect趋肤效应radiation protection 辐射保护satellite valley 卫星谷snap time急变时间radiative recombination 辐照saturated current range 电流饱sneak path潜行通路复合和区sulethreshold 亚阈的radioactive 放射性saturation region 饱和区solar battery/cell 太阳能电池reach through 穿通saturation 饱和的solid circuit固体电路reactive

46、sputtering source 反scaled down按比例缩小solid solubility 固溶度应溅射源scattering 散射sonband 子带read diode里德二极管schockley diode肖克莱二极管source源极recombination 复仑schottky肖特慕source follower 源随器recovery diode 恢复二极管schottky barrier肖特基势垒space charge空间电荷reciprocal lattice 倒核子schottky contact i芍特基接触specific heat (pt)热recover

47、y time恢复时间schrodingen薛定丿也speed-power product 速度功耗rectifier整流器(管)scribing grid 划片格乘积rectifying contact 整流接触secondary flat 次平面spherical球面的reference基准点基准参考点seed crystal 籽晶spin h旋refractive index 折射率segregation 分凝split分裂register協存器selectivity 选择性spontaneous emission 门发发reg i st rat ion 対准self aligned自对准

48、的射regulate控制调整self diffusion 自扩散spreading resistance 扩展电阻relaxation lifetime 驰豫时间semiconductor 半导体sputter 溅射reliability 屮性semiconductor-c on trolledstacking fault 层错resonance 谐振rectifier可控硅static characteristic 静态特性resistance 电阻sendsitivity 灵敏度stimulated emission 受激发射resistor电阻器serial串行/串联stimulated recombination 受激resistivity 电阻率series inductance 串联电感复合regulator稳压管（器）settle time建立时间storage time存储时间relaxat