Silvaco TCAD 器件仿真2

1、Tang shaohua, SCU14:001Silvaco学习E-Mail: 上一讲知识回顾和本讲内容上一讲内容：器件仿真的整体思路器件结构，材料特性，物理模型，计算方法，特性获取和分析这一讲安排器件结构生成（2D/3D）ATLAS语法描述结构DevEdit编辑结构14:002Silvaco学习器件仿真流程14:00Silvaco学习3ATLAS描述器件结构ATLAS描述器件结构的步骤14:00Silvaco学习4meshregionelectrodedopingmesh网格定义，状态有mesh,x.mesh,y.mesh,eliminate等Mesh对网格进行控制x.mesh和y.mesh

2、定义网格位置及其间隔(line)14:00Silvaco学习5mesh space.mult=1.5mesh infile=nmos.strx.mesh loc=0.1 spac=0.05meshEliminate可以在ATLAS生成的mesh基础上消除掉一些网格线，消除方式为隔一条删一条参数columns,rows, ix.low,ix.high,iy.low.ly.high,x.min,x.max,y.min,y.max14:00Silvaco学习6Eliminate columns x.min=0.2 x.max=1.4 y.min=0.2 y.max=0.7Eliminate 前Eli

3、minate 后regionRegion将mesh中不同位置以区域组织起来语法：Region number= 14:00Silvaco学习7region num=1 y.max=0.5 siliconregion num=2 y.min=0.5 y.max=1.0 x.min=0 x.max=1.0 oxideregion num=3 y.min=1.0 y.max=2.0 x.min=0 x.max=1.0 GaAs例句：electrodeElectrode定义电极语法：electrode name= num= substrate 14:00Silvaco学习8elec name=emitt

4、er x.min=1.75 x.max=2.0 y.min=-0.05 y.max=0.05elec name=gate x.min=0.25 lenght=0.5elec num=1 name=source y.min=0 left length=0.25elec num=2 name=drain y.min=0 right length=0.25elec name=anode topelec name=cathode bottom例句dopingDoping定义掺杂分布14:00Silvaco学习9doping 分布：uniform,gaussian,erfc，具体设置还可分为三组1，Co

5、ncentration and junction2，Dose and characteristic3，Concentration and characteristic杂质类型：n.type,p.type位置：region,x.min,x.max,y.min,y.max,peak,junctionDoping例句14:00Silvaco学习10doping uniform conc=1e16 n.type region=1doping region=1 gaussian conc=1e18 peak=0.1 characteristic=0.05 p.type x.left=0.0 x.righ

6、t=1.0doping region=1 gauss conc=1e18 peak=0.2 junct=0.15doping x.min=0.0 x.max=1.0 y.min=0.0 y.max=1.0 n.type ascii infile=concdata均匀掺杂高斯分布从文件导入杂质分布ATLAS描述的二极管结构14:00Silvaco学习11go atlasmeshx.mesh loc=0.00 spac=0.05x.mesh loc=0.10 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 spac=0.01y.mesh loc=

7、2.00 spac=0.20region number=1 x.min=0.0 x.max=0.1 y.min=0.0 y.max=1.0 material=siliconregion number=2 x.min=0.0 x.max=0.1 y.min=1.0 y.max=2.0 material=siliconelectrode name=anode topelectrode name=cathode bottomdoping uniform conc=1e18 n.type region=1doping uniform conc=1e18 p.type region=2save outf

8、ile=diode_0.strtonyplot diode_0.strDevEdit编辑器件结构14:00Silvaco学习12Work areaDefining regionMesh creationSave the fileDefining region添加、替换或删除区域主要参数：区域ID(region=)、材料(material=)、区域坐标(points=“0,0 0,1 ”)14:00Silvaco学习13Region reg=1 mat=silicon color=0 xffb2 pattern=0 x9 points=“0,0 0.1,0 0.1,1 0,1 0,0”Regio

9、n reg=3 name=anode material=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1,1 0,1 0,0”例句Defining impurity定义某区域的掺杂主要参数序号：Id, region.id掺杂：impurity, resistivity,杂质分布：peak.value, reference.value, combination.function, concentration.function.y|x|z, x1, x2, y1, y2, rolloff.y, coc.func.y14:00Silvaco学习1

10、4impurity14:00Silvaco学习15Peak.value为杂质浓度reference.value为一定距离后的杂质浓度“Gaussian”, “Gaussian (Dist)” , “Error Function”,“Error Function (Dist)” , “Linear (Dist)” , “Logarithmic” log ,“Logarithmic (Dist)” , “Exponential, “Exponential (Dist)” , “Step Function”分布类型有：Rolloff.y|x|z为浓度变化的方向Impurity例子14:00Silva

11、co学习16impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantimpurity id=2 region.id=4 imp=Composition Fraction X x1=0 x2=0 y1=0 y2=0 peak.value=0.47 comb.func=Multi

12、ply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=ConstantDefining meshBase.mesh，网格整体控制 参数有height,width，矩形的最大高度和宽度Bound.conditioning，减少边界的网格点Constr.mesh，对网格中三角形做限制主要参数：X1, x2, y1, y2, max|min.height|ratio|width14:00Silvaco学习17Mesh例句14:00Silvaco学习18base.mesh height=0.1 width=0.125#bo

13、und.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height=1 max.width=1 min.height=0.001 min.width=0.001#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01constr.mesh x

14、1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01meshDevedit编辑二极管结构的例子14:00Silvaco学习19go devedit#region reg=1 mat=silicon color=0 xffb2 pattern=0 x9 points=“0,0 0.1,0 0.1,1 0,1 0,0”impurity id=1 region.id=1 imp=Donors x1=0 x2=0.1 y1=0 y2=1 peak.value=1e+18 ref.value=1000000000000 comb.func=Mul

15、tiply rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=Constantregion reg=2 mat=silicon color=0 xffb2 pattern=0 x9 points=“ 0.01,1 0.11,1 0.11,2 0.01,2 0.01,1” impurity id=1 region.id=2 imp=acceptors x1= 0.01 x2=0.11 y1=1 y2=2 peak.value=1e+18 ref.value=1000000000000 comb.func=Multiply

16、 rolloff.y=both conc.func.y=Constant rolloff.x=both conc.func.x=ConstantDevedit编辑二极管结构的例子14:00Silvaco学习20#electroderegion reg=3 name=anode mat=contact elec.id=1 work.func=0 points=“0,0 0.1,0 0.1, 0.01 0, 0.01 0,0”region reg=4 name=cathode mat=contact elec.id=2 work.func=0 points=“ 0.01,2 0.11,2 0.11

17、,2.01 0.01,2.01 0.01,2”# Set Meshing Parametersbase.mesh height=0.1 width=0.125#bound.cond max.slope=28 max.ratio=300 rnd.unit=0.001 line.straightening=1 align.points when=automatic#constr.mesh mat.type=semiconductor max.angle=180 max.ratio=200 max.height=1 max.width=1 min.height=0.001 min.width=0.0

18、01#constr.mesh x1=0 x2=0.1 y1=0.0 y2=1 max.height=0.08 min.width=0.01constr.mesh x1= 0.01 x2=0.11 y1=1 y2=2 max.height=0.1 min.width=0.01meshstructure outf=diode_1.strtonyplot diode_1.str两种结构生成的方式的对比ATLAS描述的语法较简单，结构也简单DevEdit的灵活性要强，相对复杂，可对已有的结构在重新定义网格或是扩展成三维结构14:00Silvaco学习21Atlas描述的结构Devedit编辑的结构三维结构生成得到三维结构只需在二维结构生成的语法基础上添加Z轴的坐标如z.mesh=., z.min= ,z.max= 14:00Silvaco学习22ATLAS描述三维二极管结构14:00Silvaco学习23go atlasmesh three.dx.mesh loc=0.00 spac=0.05x.mesh loc=0.1 spac=0.05y.mesh loc=0.00 spac=0.20y.mesh loc=1.00 spac=0.01y.mesh loc=