ID7S625大电流半桥驱动芯片代替IR2110_骊微电子

1、ChipownID7S625High Voltage High Side & Low Side Gate Drive IC深圳市骊微电子科技有限公司芯朋微一级代理商General descriptionThe ID7S625 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used

2、 to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagat

3、ion delays are matched to simplify use in high frequency applications.Applicationl DC/DC Converterl Power MOSFET or IGBT driverl DC/AC ConverterTypical Application CircuitFeaturesl Fully operational to +600 Vl 3.3 V /5 V/15 V logic compatiblel Floating channel designed for bootstrap operationl Gate

4、drive supply range from 10 V to 20 Vl UVLO for both channelsl 2.5A Output Current Capabilityl Matched propagation delay for both channelsPackage/Order Information9NCHO810NCVB711VDDVS612HINNC5ID7S62513SDNC414LINVCC315VSSCOM216NCLO1Order codePackageID7S625SBC-R1SOW16VDC, up to 600VNote:1. VCC supply v

5、oltage, for IGBTs, should be 15V, for MOSFETs, should be 12V-15V.2. Pull down resistor between Gate and Source of power device, the value is 10k ohms.3. Driver circuit, turn on and turn off channel should be independently, the resistors value according to power device.4. The resistor between VCC and

6、 bootstrap diode, to avoid VBS dv/dt.Pin DefinitionsPin NumberPin NamePin Function Description1LOLow side gate drive output, in phase with LIN2COMLow side return3VCCLow side supply6VSHigh side floating supply return7VBHigh side floating supply8HOHigh side gate drive output, in phase with HIN11VDDLog

7、ic supply12HINLogic input for high side gate driver output (HO) , in phase13SDLogic input for shutdown14LINLogic input for low side gate driver output (LO), in phase15VSSLogic ground16NCNot ConnectedFunctional Block DiagramVDDHINLINSDVSSVBDriverHOVS VCCDriverLOCOMPackage InformationPackage Informati

8、on SOW16DA3A2 AA1L L10.25E1 EBASE METALb b1c1 cWITH PLATINGSECTION B-B b eB BSizeSymbolMin.（mm）Typ.（mm）Max.（mm）SizeSymbolMin.（mm）Typ.（mm）Max.（mm）A-2.65D10.1010.3010.50A10.10-0.30E10.2610.4110.60A22.252.302.35E17.307.507.70A30.971.021.07e1.27BSCb0.35-0.44L0.55-0.85b10.340.370.39L11.4BSCc0.25-0.310-8&

9、#176;c10.240.250.26Top markPackageiDR. ID7S625YWWXXXXXSOW16Note：Y：Year Code；WW：Week Code；XXXXX：Internal CodeNotes:1. This drawing is subjected to change without notice.2. Body dimensions do not include mold flash or protrusion.Important NoticeWuxi Chipown Microelectronics Co. Ltd. reserves the right

10、 to make changes without further notice to any products or specifications herein. Wuxi Chipown Microelectronics Co. Ltd. does not assume any responsibility for use of any its products for any particular purpose, nor does Wuxi Chipown Microelectronics Co. Ltd assume any liability arising out of the application or use of an