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1、ST STDRIVE601三相半桥高压栅极驱动器解决方案时间:2019-08-13 10:37:58 来源:中电网ST公司的STDRIVE601是单片三相半桥高压栅极驱动器,采用BCD6s离线技术制造,用于N沟功率MOSFET或IGBT,适用于三相应用.所有器件的源电流和沉电流分别是350mA和200mA.采用互锁和死区功能可防止交叉导通.器件的高压可高达 600V,dV/dt瞬态度端正免疫度为/0 V/ns,栅极驱动电压范围从9V到20V,整个输入-输出传输时延为85ns,所有通路匹 配传输入时延,带滞后的3.3V,5V TTL/CMOS 输入,集成了阴极负载二极管(自举二极管,主 要用在三

2、相马达驱动和 逆变器.本文介绍了 STDRIVE601主要特性,框图,典型应用框图以及 三 相栅极驱动器演示板EVALSTDRIVE601主要特性,电路图,材料清单和PCB设计图.The STDRIVE601 is a high voltage devicemanufactured with BCD6s offline technology. It isa single-chip with three half-bridge gate drivers forN-channel power MOSFETs or IGBTs suitable for3-phase applications.All

3、 device outputs can sink and source 350 mAand 200 mA respectively. Prevention from crossconduction is ensured by interlocking anddeadtime function.The device has dedicated input pins for eachoutput and a shutdown pin. The logic inputs areCMOS/TTL compatible down to 3.3 V for easyinterfacing with con

4、trol devices. Matched delaysbetween low-side and high-side sectionsguarantee no cycle distortion and allow high frequency operation.The STDRIVE601 embeds a comparatorfeaturing advanced SmartSD function also integrated in the device, ensuring fast andeffective protection against fault events like ove

5、rcurrent, overtemperature, etc.Dedicated UVLO protection on the low-sides andeach of the high-side driving sections allow toprevent the power switches from operating in lowefficiency or dangerous conditions.The integrated bootstrap diodes as well as all ofthe integrated features of this IC make thea

6、pplication PCB design easier, more compact andsimple thus reducing the overall bill of material.The device is available in SO-28 package.STDRIVE601主要特性:h High voltage rail up to 600 V Driver current capability: STDRIVE601: 200 mA source current 25C 350 mA sink current 25C dV/dt transient immunity 50

7、 V/ns Gate driving voltage range from 9 V to 20 Vo Overall input-output propagation delay: 85 nsm Matched propagation delay for all channels 3.3 V, 5 V TTL/CMOS inputs with hysteresis Integrated bootstrap diodes Comparator for fast overcurrent protection Smart shutdown function Interlocking and dead

8、time function Dedicated Enable pin UVLO function on low-side and high-sidesSTDRIVE601 应用:, 3-phase motor drives* Inverters图 1.STDRIVE601 框图4 I -*!» A* wn I*,Jfrna*kt>. _ W F - K;一j TTHIiK#W«fMOMiRMROi mOMOUT1floor?CMJT3J Urt3 JW91£9mj加UCC UVL41 vec LWLOCC PE3T图2. STDRIVE601 典型应用框图三

9、相栅极驱动器演示板EVALSTDRIVE601Demonstration board for STDRIVE601 triple gate driverThe EVALSTDRIVE601 demonstration board is a complete 3-phase inverter which allows evaluating all of the STDRIVE601 features. The power stage features STGD6M65DF2 IGBTs, but can be populated with any IGBT or power MOSFET in

10、DPAK or powerFLAT 8x8 HV package. The board is designed to support a three shunt or a single shunt current sensing topology.A strip connector allows an easy interfacing with MCU control.The STDRIVE601 is a 600V gate driver device manufactured with BCD6s offline technology. It is a single-chip with t

11、hree half-bridge gate drivers for N-channel power MOSFETs or IGBTs suitable for 3-phase applications.The device integrates three bootstrap diodes and a smart shutdown feature able to detect very fast overcurrent condition, minimizing the propagation delay between the overcurrent event and the output

12、 switch-off.图3.演示板EVALSTDRIVE601夕卜形图演示板EVALSTDRIVE601 主要特性:? High voltage rail up to 600V? Driver supply input voltage range 9V -20V? STGD6M65DF2 IGBTs power stage featuring:-V(BR)CES = 650 V-VCE(sat) = 1.55 V IC = 6 A? Dual footprint for IGBT/MOSFET package:一DPAK-PowerFlat 8x8? Selectable single or

13、 3 -shunt current sensing topology:-Sensored or sensorless BEMF detection一FOC or 6-Step algorithm? SmartShutdown overcurrent prot ection? Hall effect sensors connector? Bus voltage sensing? 450V bulk capacitor? Connector for interfacing with MCU? RoHS compliant演示板EVALSTDRIVE601 应用:? Three -phase mot

14、or drives? Fans? Pumps? Refrigerator compressors? Industrial inverters? Appliances图4.演示板EVALSTDRIVE601电路图(1):驱动器输出级图5.演示板EVALSTDRIVE601 电路图(2):反馈网络演示板EVALSTDRIVE601 材料清单:ReferencePart ValuePart DeBcriptiof)PackageIC1,C4.C7X9.C12.C13,C36X 37.CM.C51N M5MT ceramic capacitorSize 0603C2,CJ22IMF/2S.VSMT e

15、eramiecapacitorSeeOC03C51c6a470m50)SMT ceramic capacitorSize 805C10,C3247HFZ2SYSMT ceramic capacitorSee 0403C111"/25VSMT ceramic capacitorSizeocojC14 c 17.C 1 ®.C 19cM.c22 .C24.C25 .C 27,C2S.C3533pF/2SVSMT ceramic capacitorSize (*03C15N.M.Film capac ito(4x13 mm. Pitch 10 mmC,633nF/5JQVSMT

16、rtiuitiiayr c-apador5g 12WC21AN M.5MT cerormccapacitorSs 1206C2110UFZ25YSMD aluminum eletSee CC2JAN M.SMT ceramic capacitorSee W05C234U7T/25VSMD aswiun 3Mt capocCorDm. 3.3x33 mmC26,C28,C302.2pF/25VSMT ceramtccapacitorSize 0603C31,C33.C42.C47,C49C50WDnFSVSMT eersmieeipa citerSinWOSC3468uF/4S0VTHT ete

17、drolybc capaatxx, 旧的 p7sdi3n256am. 18 mm. pMch 7.5 mmC39.C40,C41WpF/25VSWT ceramic eapaeitorSce(«03C44,C45,C464.7pF/5OVSMT ceraniic opa citerS<mM03C4«4.7vF/lOVSMT «?ram<wpawtorSec W05D1,D5.D6.D7.D8.D9D11.D15016.D17.018.D19,D20.D21.D22,D23BATS4J40V, 300mA vrail signal Seh6»y

18、 sun DMeSOO-323D2.DS.tMN MTurbo 2 uRrafast rectifierSUAD10BZT52C3V3Zenet diode 33 VSOD-123D24,D25,D26DA2JF810OLftOOV fast tewwery diodeSC-90A (SMinC-FS. B)JP1.JP17CLOSEDSMT jumperSoidennfl 03dH2,JP3OPENSMT jumperSize (MOSJP4OPENSMT jvmpcfSoWcrin padJP18.JP19JP20CLOSED 1.2SMT jumperSolden padJP21CLOS

19、ED 2-4SMT jumperSoldering padsJIMO«SV.508.2P_tcre wCorrwckx terrwwl kHck TH. 2 pOBitoont 5 MJ mmPich 5.08 mmJ?MO«SV08.3P_scre *TermcH bloci T.H, 2 positions, 5.CM mmPtch 5 08 mm4MQRSV.350-3P_$cre wTerminal btod TH 3 p»ositions. 3.S inmPcch 3.5 rwnReferencePart ValuePwt DescviptiooPack

20、aeeJ4MOTOR CONN.He Jef Vertcil Ccxinector 2x17 peled oteh 2 5-4 mm2x17 pnsSTRIP 1x13Strip connector 13 posff 2 54 mm1x13pmsJ6STRIP 1k5Stnp eon nector S gs 2 S4 mm1x5pjn3CHQ2Q3.aq5.04STGD6M65DF2Trench cate fi:W-$top K>BT M MOM 650V, 6A low IomDPAKAltematve P.ND.N.M.equipment P(mwFLAT8i«R1,R7,

21、R11.RH.R19,R25WRSMT refiiitorR2.R5.R827RSMT resistorSize 0505R3.R»,R12,R16.R21.R26100RSMT reai6torSgoMOSR4,R10.R13R17.R23,R27100kUT一但ownR6RG2R85.R1 住 R113.R117ORSMT rwzwSize MOSR14,R38,R3947kSMT resistor5aeO4Q3R 18,R42.R47.R52.R61.R76.R79,R8010kSMT rwotiorS(zcO«nR20,R22IR24.R3t,R32R33.RMR3

22、5.R37,R4 0R72.R73.RT41KSWT resistorSize M03R30.R57,R58220m/2W/1%SMT resiatorS(ze 121ssi2R361K8SMT的Size 1206R41 ,W4.R4e.R49.R$ 1 ,R54 .R75.R76 ,R771MSMT awSec «03R45 ftffl.R55.R6a,R6-9 R7020kSMT resistorS(ze 0603R59,R713R3SMT resistorSee M03R604k7&MT resistorS<zeO«0RW.R82.Ra3.Re4N MS

23、MT r«i3tor尔 Q<03R64.R6S470kSMT resistorSee 1206R666.491SMTS3 W05R67R87,R93,R971kSMT rowstxxSee MOSR86R88,N92.RX,RW R98160kSMT resistor5(ze 1206R91,R9S,R993.3kSMT resistorSee M03R11-4必SMT resastxx6(ze 0<03R11510MSMT 23Sire O6Q3TP1JP3,TP4.TP5.TP«.TP7JP«.IP9,TP10,T P11JP12lTP13rTP14,TP15tTP16TP17TP18 ,TP19.TP20.TP21 ,TP22,TP2i,TP24.TP25.TP 2G,TP27.TP28.TP31.TP32TP tar prefeeDmm 1 27, Ho1« OanmTP29TPkNELLO-Imm- R

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