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1、Page 1 CONFIDENTIAL利用晶体生长软件FEMAG对蓝宝石晶体生长仿真模拟方法FEMAGSoft S.A., BelgiumA SPIN-OFF company fromUniversite catholique de LouvainBelgiumProfessor F. DupretPage 2 CONFIDENTIAL General introduction Sapphire GrowthContentPage 3 CONFIDENTIALIntroductionFor more than 25 years, FEMAGSoft develops simulation so
2、ftware dedicated to the research and development of optimal crystal growth processes.1984 First research on Germanium growth in University of Louvain. Prof. Franois Dupret1989 First research on Silicon growth in University of Louvain.1992 First collaborations with major IC companies. Development of
3、defect-free silicon wafer production. Today, more than 35 patents are referencing FEMAG Software2003 FEMAGSoft S.A., spin-off from University of Louvain.2006 Collaboratrion with major Solar companies. Development of low-cost and low-oxygen content processes.2009Large investment for a new software fr
4、amework2010 Release of Software application for Sapphire ingot production.Page 4 CONFIDENTIALCzochralski processPage 5 CONFIDENTIALDirectional Solidification SystemPage 6 CONFIDENTIALFloating Zone ProcessPage 7 CONFIDENTIALSapphire Growth by CZ and kyropoulosPage 8 CONFIDENTIALSapphire growth by HEM
5、Page 9 CONFIDENTIALWhat are FEMAG software? Process-dedicated simulation tools, adapted to your own processes and able to solve your problems. Global All the furnace components are considered. All the heat transfer mode are considered (radiation transfer, heat conduction, melt and gas convection) In
6、duction and ohmic heating Time DependentPage 10 CONFIDENTIALProcess-dedicated tools FEMAG-CZ: Czochralski FEMAG-FZ: Floating Zone FEMAG-VB: Vertical Bridgman FEMAG-CZ/OX : Czochralski for Sapphire FEMAG-KY: Kyropoulos FEMAG-DS: Directional Solidification FEMAG-HEM: Heat Exchange MethodGain of time.
7、Process mastering Accurate and right to the point Page 11 CONFIDENTIALPlatform orientedFRAMEWORK : FEMAG3RADIATIONCONVECTIONMESHGEOMETRYCONDUCTIONFEMAG-CZFEMAG-HEMFEMAG-DSFEMAG-KYROPOULOSFEMAG3 NEW 2011Very accurate : Finite Element and Spectral methodsVery efficient : 3D simulations in less 1 dayVe
8、ry flexible : Very fast development of new demand Page 12 CONFIDENTIALGlobal simulations Czochralski Furnace for SiliconHEM Furnace for SapphireNo simplification of the process conditions Page 13 CONFIDENTIALDynamic simulationsA dynamic simulation tool Complete process simulation Dynamic effect of i
9、nterface deformation Varying processing conditionsPage 14 CONFIDENTIALSapphire Crystal Growth SimulationPage 15 CONFIDENTIALSapphire Simulation Objective The market of Sapphire is experiencing a very fast growth rate and become very competitiveMany companies invest in simulation software in order to
10、 reinforce their positions HEM, Czochralski and Kyropoulos process require optimization and a good understanding Strong need for efficient numerical tools. Radiation effects in the participating crystal and melt is a complex problem.Page 16 CONFIDENTIALSapphire Simulation ObjectiveOur goal is to pro
11、vide accurate simulation tool, able to take all the process features into account and to optimize the growth process in terms of the resulting crystal quality.Page 17 CONFIDENTIALSapphire Simulation ObjectiveKYROPULOSCZOCHRALSKIHEMPage 18 CONFIDENTIALFEMAG-CZ/OXFEMAG-CZ/OX Software to simulate Sapph
12、ire Growth by CZ and KyropoulosSpecifications:-Temperature in the sapphire and in all furnace components by solving the global heat transfer in the furnace (radiation, conduction , convection).-Flow velocity in the sapphire liquid phase.-Crystallization front shape -Ohmic and Induction Heating-Advan
13、ced radiation heat transfer in the sapphire-Gas convection-Anisotropic thermal stresses in the crystalPage 19 CONFIDENTIALTemperature in the Hot ZoneFEMAG-CZ/OXCZ processwith Induction Heating systemInduction Heating systemPage 20 CONFIDENTIALTemperature in the crystal and in the melt FEMAG-CZ/OXCZ
14、processwith Induction Heating systemPage 21 CONFIDENTIALMelt velocity amplitude FEMAG-CZ/OXCZ processwith Induction Heating systemThe interface shape and position is a result of the simulation Page 22 FEMAGSoft 2012Temperaturefield in the meltStreamfunctionFEMAG-CZ/OX / CZ and KYROPOULOS processPage
15、 23 FEMAGSoft 2012Melt meshes BLM (boundary layer mesh)Coarse meshBLM mesh is very important to simulate the interface Page 24 FEMAGSoft 2012Local temperature fieldResult using coarse meshResult using BLM meshBLM mesh enables a better prediction of the crystalisation interface Page 25 FEMAGSoft 2012
16、Velocity fieldResult using coarse meshResult using BLM meshPage 26 CONFIDENTIALFEMAG-HEMFEMAG-HEM Software to simulate Sapphire Growth by Heat Exchange MethodSpecifications:-Temperature in the sapphire and in all furnace components by solving the global heat transfer in the furnace (radiation, condu
17、ction , convection).-Flow velocity in the sapphire liquid phase.-Crystallization front shape -Advanced radiation heat transfer in the sapphire-Gas convection-Anisotropic thermal stresses in the crystalPage 27 CONFIDENTIALFEMAG-HEMFEMAGSoft CAD tool to introduce the geometryPage 28 CONFIDENTIALFEMAG-
18、HEMGlobal Temperature in the furnacePage 29 CONFIDENTIALFEMAG-HEMMelt convection Detail of melt convection Page 30 CONFIDENTIALFEMAG-HEMTemperature distribution in the crystal and melt for different times Velocity amplitude distribution in the melt for different times Page 31 CONFIDENTIALAnisotropic
19、 Thermal Stress (HEM Sapphire A-axis)FEMAG-HEM quasi-steady simulation of the growth of a Sapphire crystal:3D von Mises invariant isovalues (Pa)FEMAG-HEM ExamplePage 32 CONFIDENTIALAnisotropic Thermal Stress (HEM Sapphire C-axis)FEMAG-HEM quasi-steady simulation of the growth of a Sapphire crystal:3D von Mises invariant isovalues (Pa)FEMAG-HEM ExamplePage 33 CONFIDENTIAL FEMA
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