《光电材料与器件基础》教学大纲.docx

1、“The Fundamentals of Photoelectric Materials and Instruments,Course SyllabusCourse Code： 09040011Course Category: Major ElectiveMajors： Chemical Engineering, ChemistrySemester： SpringTotal Hours： 36 HoursCredit: 2 CreditsLecture Hours： 36 HoursLab Hours： 0 HoursPractice Hours： 0 HoursTextbooks： 

2、4;An Introduction to the Optical Spectroscopy of Inorganic Solids, J. Garc'ia Sol'e, L.E. Baus'a and D. Jaque, Universidad Aut'onoma de Madrid, Madrid, Spain Optical Properties of Solids, MARK FOX. Department of Physics and Astronomy, University of SheffieldReferences：(1) Fox, M., Op

3、tical Properties of Solids, Oxford University Press, Oxford (2001).(2) Dcmtr"odcr,W., Laser Spectroscopy, 3rd edn, Springer Scries in Chemical Physics 5, Springcr- Verlag, Berlin (2003).(3) Kuzmany, H., Solid State Spectroscopy. An Introduction, Springer-Verlag, Berlin (1998).(4) Weber, M. J.,

4、Handbook of Optical Materials, CRC Press, Boca Raton, Florida (2003).(5) Daran, E., Legros, R., Munoz-Yag"ue, A., and Baus'a, L. E., J. Appl. Phys., 76(1), 270 (1994).(6) Fem'andez, J., Mendioroz, A., Garc'ia, A. J., Baida, R., and Adam, J. L., Phys. Rev. B, 5(5), 3213(2000).(7) Blu

5、ndell,S.(2001).M4gg”$， in condensed mater physics. Clarendon Press, Oxford.(8) Lorrain P., Corson D.R. and Lorrain F. (2000). Fundamentals of electromagnetic phenomena. W.H. Freeman, Basingstoke.(9) Corney, Alan(1977). Atomic and laser spectroscopy. Clarendon Press, Oxford.(10) Harrison, W. (1999).

6、Elementaiy electronic structure. World Scientific, Singapore.(11 )Bhattacharya, P. (1997), Semiconductor optoelectronic devices (2,d edn). Prentice Hall, New Jersey(12) Hehn, M(2000). Long wavelength infrared emitters based on quantum wells and superlattices. Gordon and Breach, Amsterdam.(13) Nakamu

7、ra, F., Peartron S. and Fasol, G. (2000). The blue laser diode (2nd edn), Springer-Verlag, Berlin.(14) Liu, H.C and Capasso, F. (2000a). hitersubband transitions in quantum wells: physics and device applications /, Semiconductors and Semimetals, Vol. 62 (series cds R.K. Willardson and E.R. Weber). A

8、cademic Press, San Diego.(15) Liu, H.C and Capasso, F. (2000b). hitersubband transitions in quantum wells: physics and device applications /, Semiconductors and Semimetals, Vol. 66 (series eds R.K. Willardson and E.R. Weber). Academic Press, San Diego.Teaching Aim:This courseThe fundamentals of phot

9、oelectric materials and instruments instructs the students from the Intensive Training Class and Engineering Class in the most basic aspects to be initiated into (he field of the optical spectroscopy of solids, such as the propagation of light, Light Sources, Monochromators and Detectors, The Optica

10、l Transparency of Solids, Optically Active Centers, Applications: Rare Earth and Transition Metal Ions, and Color Centers, etc. The main purpose of this course is to help the students who are major in Chemistry and Chemical Engineering to form a way in which they can be used to thinking of, analyzin

11、g, and solving problems by combining the knowledge of chemistry and physics. Besides, in this course, all the topics and their consequences are taught at a step by step developing level in order to ensure that students with different starting levels can be familiar with this field as soon as possibl

12、e and keep on making more and more progress. The emphasis is on clear physical principles of symmetry, quantum mechanics, and eleciromagnetisin which underlie the whole field. At the same time, the subjects arc related to real measurements and to the experimental techniques and devices currentlythe

13、ease of p-type doping.b. Light emitting diodesChapter Twelve Semiconductor quantum wellsLecture Time: The fifteenth week; Lecture Hours: 2 HoursContentsI. Quantum confined structuresa. Introduction about quantum confinement effectquantum wellsquantum wiresquantum dotsb. Use Heisenberg uncertainty pr

14、inciple to calculate the confined region1.1 Growth and structure of semiconductor quantum wellsa. Molecular Beam Epitaxy(MBE)b. Metal-Organic Vapour Phase Epitaxy(MOVPE)c. Metal-Organic Chemical Vapour Deposition(MOCVD)d. The growth and Eg of the quantum wells1.2 Electronic levelsa. Separation of th

15、e variablesb. Infinite potential wells and finite potential wellsapproaches to solve the equations1.3 Optical absorption and excitonsa. Brief introduction about selection rulesFermi's golden ruleb. Experimental datacombined with the knowledge of excitons1.4 The Optical emissiona. The luminescenc

16、e spectrum consists of a peak al the band gap energy with a width determined by the carrier density and the temperature.1.5 Quantum dotsa. Variation of the electron density of states with dimensionality.b. Absorption spectra of glasses with CdS niicrocrystals of vaiying size at 4.2K.Chapter Thirteen

17、 Molecular materialsLecture Time: The sixteenth week; Lecture Hours: 2 HoursContentsI. Introduction to molecular materialsa. Aromatic hydrocarbonsb. Conjugated polymersc. Electronic states in conjugated moleculesmolecular orbital, LUMO, HOMO1.1 Optical spectra of moleculesa. Understand the concept o

18、f vibrational-electronic transitionsuse the schematic diagram to illustrate the notionsb. Electronic-vibrational transitionsthe cause of Stokes shiftc. Molecular configuration diagramsbased on Born-Oppenheimer approximationd. The Franck-Condon principleThe electronic transitions take place so rapidl

19、y that (he nuclei do not move significantly during the transition.use the absorption spectnim of ammonia in the UV spectral region to illustrate the idea.Chapter Fourteen Luminescence CentresLecture Time: The sevenleenih week; Lecture Hours: I HourContents1. Color centresa. Four typical color center

20、s in alkali halide crystals: F, FA, F-2, F-2+b. Wider variety of colour centers, greater versatility in production of luminescent systemc. The energy levels of an electron in a colour center solved by quantum mechanics: En = h2(n2x+ n2y+ n2z) /8m()(2a)2d. The lowest energy transition of the F center

21、: EF = 3h2/(8m0(2a)2)1.1 Rare Earth Ionsa. The applications of rare earth ions: phosphors, lasers, and amplifiers.etcb. Trivalent rare Earth Ions: the Dieke Diagramc. The energy-level diagram for trivalent lanthanide rare earth ions in lanthanumchlorided. Divalent rare earth ionse. The two broad ban

22、ds in the spectrum of Eu2+ ion in NaCl1.2 Transition Metal Ionsa. The most common transition metal ions and their corresponding numbers (n) of 3d valence electronsb. The absorption and emission spectra of 3dl ionsc. 3dn ions: Sugano-Tanabe Diagramsd. The absorption and emission spectra of rubye. The

23、 room temperature luminescence of the Cr3+ ion in different host crystalsf. The laser wavelength ranges covered by several transition metal ions when they are incorporated in different ciystalsChapter Fifteen PhononsLecture Time: The seventeenth week; Lecture Hours: 1 HourContents1. Infrared active

24、phononsa. Differences between acoustic and optical phononsb. Differences between transverse and longitudinal phonons1.1 Infrared reflectivity and absorption in polar solidsa. The classical oscillator modelb. The lattice absorption1.2 Introduction of polaritons and polarons1.3 Different kinds of scat

25、teringTypeInteractionFeatureTechniqueRaman scatteringphoton and phononinelasticRaman spectroscopyBrillouin scatteringphoton and phononinelasticBrillouin spectroscopyRayleigh scatteringphoton and bound electronelasticMie scatteringphoton and large particlesclasticCompton scatteringhigh-energy photon

26、and free electroninelasticThomson scatteringlow-energy photon and electronelasticRutherford scatteringalpha particle and nucleielasticRutherford backscattcringAssessment Methods:Daily scores: 20% (Answer questions in class; at least three questions per students)Mid-term examination: 20%Final examina

27、tion: 60%used by physicists in academe and industry, which is aimed to make the course more practical fbr students' further development.Chapter One FundamentalsLecture Time: The first week; Lecture Hours: 2 HoursContents1. The Origins of Spectroscopya. Self-introduction of the teachersb. Inform

28、the students of what they can learn in this classc. Tell the students the rules of evaluation2. The Electromagnetic Spectrum and Optical Spectroscopya. The quantization equation: E= E=h v =hc/ v =hc , h is Planck's constant, and h=6.02*10A(-34)b. Three different phenomena when light interacts wi

29、th substance: Absorbing, Reflecting, Scattering.3. Absorptiona. Absorption coefficient: di = - a I dxb. Lambert-Beer's Law: I = I0eA(- a x)c. The measurement of absorption spectra: the spectrophotometerd. Optical density: OD=log(Io/I)c. The relationship between Absorption coefficient and optical

30、 density a = (OD)/(x log e)= 2.303(OD)/xf. Absorbance: A=l-I/I0=l - 1()A(-OD)g. Transmittance: T = 10A(-OD)h. Reflectivity: R=Ir/I()i. The measurement of reflectivity4. Luminescencea. Different types of luminescence: Photoluminescence, cathodoluminescence, radiol uininescence.etcb. The Measurement o

31、f Photoluminescence: the Spectrofl nori meterc. Luminescent efficiency: = T| (Io - I)d. Stokes and Anti-Stokes Shiftse. Time-resolved luminescencef. The quantum efficiency T|: T| = A/(A + Anr)= t / t 05. The Raman Effecta. The principle of Raman Scattering: inelastic scatteringb. Stokes lines and An

32、ti-Stokes linesChapter Two Light SourcesLecture Time: The second week; Lecture Hours: 2 HoursContents1. Thermal Radiation and Planck's Lawa. Higher temperature leads to shorter wavelength and stronger intensity.b. Stefan-Boltzmann law: Etot = o T4, Stefan-Boltzmann constant: a =5.67 X 10-8 Wm

33、9;2 K42. Various lampsa. The definitions, principles and main characteristics of tungsten and quartz halogen lampsb. The principle, main characteristics, main materials and emission spectra of different spectral lampsc. The schematic design and wavelength range of a fluorescent lampd. The principle

34、and main characteristics of high-pressure discharge vapor lampse. The definition and main applications of solid state lamps3. Basic concepts of lasera. The word Laser is short for Light Amplification by Stimulated Emission of Radiationb. The main characteristics of Laser: ®The large spectral de

35、nsity of power, The small divergence of the radiation beam,The narrow spectral width, The possibility of continuously tuning the wavelength,The possibility of pulsed lasers supplying intense short and ultra-short pulses up to (he femtosecond range, ©Beneficial in dealing with the phenomena (hat

36、 occur when many mutually coherent waves are superimposedc. The schematic design of a laser: an active medium, a pumping process, an optical resonator systemd. The explanation of the principle of the resonator4. Different types of lasersa. The mechanism of the excimer lasersb. The main principle and

37、 some common materials of gas lasersc. The main characteristics of dye lasers and the absorption and fluorescence spectra of a dye in a liquid solutiond. The structure of semiconductor lasers and their working mechanisme. Common solid state lasers(A12O3：Cru, Nd:YAG.etc) and their energy levels5. The

38、 tunability of laser radiationa. The mechanism of tunable solid state lasersb. A simplified energy-level diagram for a vibronic laserChapter Three Monochromators and Detectors Lecture Time: The third week; Lecture Hours: 2 HoursContents1. Monochromatorsa. The definition of monochromatorsb. The two m

39、ain utilities of monochromators in optical spectroscopy experimentsc. The schematic drawing of the simplest kind of monochromatord. The main components of a monochromator:a variable entrance slit, monochromator optics,®a dispersive element, a variable exit slite. The main parameters that are us

40、ed (o characterize any monochromator: ©the spectral resolution,Bandpass,The spectral response: 'blaze', ©Dispersion2. Detectorsa. The basic parameters of a detector: ©The spectral operation range, responsivity,The time constant ( t ), The noise equivalent power (NEP),The detec

41、tivity, The specific detectivityb. Different types of detectors: Thermal detectors, Photoelectric detectors3. The Photomultipliera. The working principles of a photomultiplierb. The schematic drawing of a photomultiplierof pulsed radiationc. Two main causes of (his dispersiond. Noise in photomultipl

42、iers4. Optimization of the Signal-to-Noise Ratioa. The averaging procedureb. The Lock-In amplifierChapter Four The Optical Transparency of SolidsLecture Time: The fourth and fifth weeks; Lecture Hours: 4 HoursContents1. Optical Magnitudes and the Dielectric Constanta. The complex refractive index, N

43、: N = n + i kb. The extinction coefficient, k : a=2co k /cc. The relative dielectric constant of the material: e i = n2 - k 2, e 2 = 2n kd. n and k as functions of the relative dielectric constant: n=l/2(t 12+ £ 22)i/2+ e ij,/2 k =1/2( e I2+ E 22),/2- £ 1,/2e. R=(l-n)2+ k 2/ (l+n)2+K22. Me

44、talsa. The restoring force on the valence electrons: Drude modelb. The definition of ideal metals: no damping forcesc. The damping effect in real metals3. Semiconductors and Insulatorsa. The definition of semiconductors and insulatorsb. The energy bands of an insulatorc. The explanation of the band

45、structure diagram of Si4. The Spectral Shape of the Fundamental Absorption Edgea. The explanation of interband transitions in solidsb. The definition of direct transition and indirect transitionc. The absorption edge for direct transitions: the room temperature absorption spectrum of In As in the fu

46、ndamental absorption edge regiond. The absorption edge for indirect transitions:e. An analysis of the absorption edge of Ge5. Excitonsa. The definition and formation of excitonsb. The energy levels of an excitonc. Two basic types of excitons can occur in crystalline materials: weakly bound (Mott-Wan

47、nicr) excitons, tightly bound (Frenkel) excitonsd. The formation of weakly bound (Mott-Wannier) excitonse. The explanation of the absorption spectrum of cuprous oxidef. The formation of tightly bound (Frenkel) excitonsg. The explanation of absorption spectra of sodium chloride and lithium fluoride C

48、hapter Five Optically Active CentersLecture Time: The sixth and seventh weeks; Lecture Hours: 4 HoursContents1. Brief introductiona. The definition of optically active centersb. The optical features of a center depend on the type of dopant.c. The scheme of an illustrative optical center, AB62. Stati

49、c Interactiona. The static electric field is commonly called the crystalline field.b. The energy level can be solved by Schrodinger equation, H ip i = Ej ic. The energy of free ion in crystalline field:H=Hfi+HcfHfi： the Hamiltonian related to the free ion AHcf： the crystal field Hamiltonian accounti

50、ng fbr the interaction of the valence electrons of A with the electrostatic crystal field created by the B ionsd. The energy of free ion applying quantum mechanical perturbation theory:Hh=H()+Hee +HsoHo： the central field HamiltonianHee： a term that takes into accounting for any perturbation due to

51、the Coulomb interactions among the outer (valence) electronsHso： the spin-orbi( interaction summed over lhese electronse. Weak crystalline field: Hcf«Hso,f. Intermediate crystalline field: Hcf«Hso<Hccg. Strong crystalline field: Hso<Hcc<Hcfh. The crystalline field on d1 optical io

52、nsi. Different types of arrangement of ligands: octahedral, tetrahedral, cubicj. The application of molecular orbital theory in an octahedral ABo center3. Band Intensitiesa. The factors effecting the absorption probability: incoming light intensity and (he matrix element, u i fb. Allowed transitions

53、 when initial and final states have opposite parityc. Forbidden transitions when initial and final states have equal parity4. Dynamic Interaction: The Configurational Coordinate Diagrama. The Schrodinger's Equation applied in dynamic interaction:H = Hhi + Hcf + HlHl： the Hamiltonian describing (

54、he latticeb. The side-band spectrum is essentially coincident with the Raman spectrum of lithium niobate.c. Two examples of dynamic induced band-shape effects: Weak coupling and strong coupling.d. The configurational coordinate diagram for theABo center oscillating as a breathing modee. The energy o

55、f harmonic oscillator at frequency 0: En =(n+l/2) h Q5. Band Shape: The Huang-Rhys Coupling Parametera. The configurational coordinate diagram with which to analyze transitions between two electronic statesb. The symmetry of absorption plot and emission plotc. The character of Huang-Rays parameter:

56、a measurement of the Stokes shiftd. The low-temperature band shape6. Nonradiative Transitionsa. Multiphonon emissionb. Energy transfer: Forster (Coulombic), Dexter(e- exchange)c. The concentration quenching of luminescenceChapter Six Applications: Rare Earth and Transition Metal Ions, and Color Cent

57、ers Lecture Time: The eighth week; Lecture Hours: 2 HoursContents1. Rare Earth Ionsa. The applications of rare earth ions: phosphors, lasers, and ampliflers.etcb. Trivalcnt rare Earth Ions: the Dicke Diagramc. The energy-level diagram for tri valent lanthanide rare earth ions in lanthanum chlorided.

58、 Divalent rare earth ionse. The two broad bands in the spectrum of Eu2' ion in NaCI2. Nonradiative Transitions in Rare Earth Ions: The 'Energy-Gap' Lawa. The relationship between energy gap and multiphonon emission rate:Anr=Anr(O)Xe"m)Pb. The measured values of the nonradiative rate, Anr as a function of the energy gap for different trivalent rare earth ions in three hos