trench DMOS introduction-文档资料

1、10.35um Trench DMOS process introduction2 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue discussionOUT LINE3 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue

2、discussion4DMOS-Double Diffused MOS 器件类型特 点应 用DMOSDMOS高压大电流驱动（器件结构决定漏端能承受高压，高集成度可在小面积内做超大W/L）模拟电路和驱动，尤其是高压功率部分，不适合做逻辑处理。CMOSCMOS集成度高，功耗低适合做逻辑处理，一些输入，也可做输出驱动BipolarBipolar两种载流子都参加导电，驱动能力强，工作频率高，集成度低模拟电路对性能要求较高部分(高速、强驱动、高精度）DMOS introduction and application5IGBTLDMOS Laterally diffused MOSVDMOS Vertic

3、al diffused MOSDMOS introduction and application6UNIT CELL SEMTOP-VIEWWIRE BONDTrench DMOS introduction Gate padSource padSOURCEcurrentGATEEPISUBDRAIN7 DMOS introduction and application Trench DMOS device structure Process flow introduction Main important step and issue discussion8S G N+N-DUGSwhenth

4、e channel change as N type Inversion layer ID UDSID P+Trench DMOS device structureN+P-wellgatedrainsource9 DMOS introduction and application Trench DMOS function Process flow introduction Main important step and issue discussion10Mask introductionZero mask : define the alignment mark areaTO mask : d

5、efine the guard ring (GR) and cell areaTR mask : define the trench area GT mask : define the poly link areaSN mask : define P+ implant area W1 mask : define contact area A1 mask : define bond area PT mask : define P-well implant area Backside : define the drain pad 110.35um Trench DMOS process intro

6、ductionEPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+SUB : CZ N 0.001-0.003ohm.cmN- EPI : N 0.21-0.25ohm.cmEPISUB编批平边打标EPI-N 0.207-0.253 OHM.CM擦片10#清洗B-CLEAN120.35um Trench DMOS process-wafer startEPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N- Initial oxide: 350+/-50AEPISUB吸杂氧化R0007测产品片300-350-400A1

7、30.35um Trench DMOS process-Zero markN- N+EPISUBPRZero mark photoPR alignment mark areaZERO 光刻S3#/CUNCN01 ZERO显检140.35um Trench DMOS process-Zero markN- N+EPISUB1500APRZero mark etch : SI loss 1500APR alignment mark areaZERO层腐蚀Si loss 1200A检查15EPI-N, 0.21-0.25ohm.cmSUB,0.001-0.003ohm.cmN+N- 0.35um T

8、rench DMOS process-Zero markPhoto stripalignment mark areaEPISUB干法去胶BC湿法去胶PWSA01Si深度测量1500+/-200A检查16N- N+EPISUBoxide remove : wet etch 350A0.35um Trench DMOS process-pad oxide removealignment mark area湿法ZERO ETCHBOE 60秒(浸润)检查17N- N+EPISUB OXIDE:6500AWet oxide 6500A0.35um Trench DMOS process-GR oxid

9、eCircuit area清洗B-CLEAN场氧化R0217测产品片5600-6500-7400A 118 OXIEDE:6500A0.35um Trench DMOS process-TO photo 3.0umPR TO photo : ADI 3.0+/-0.3umGR areaCell areaCELL3.0umGRN- N+EPISUB清洗S/P5*1SDG光刻32#/CUNC01.TO测条宽2.7-3-3.3UM LCF显检19GR WET ETCH : AEI 2.3+/-0.3um0.35um Trench DMOS process-GR etchN- N+EPISUB3.0u

10、mPR 2.3um闪氧DESCUM湿法腐蚀540秒 (浸润)检查残氧测量0-20A 2200.35um Trench DMOS process-GR PR strip N- N+EPISUBGR oxideCELL2.3umGRPR strip干法去胶BC湿法去胶PR-L/R检查测条宽2-2.3-2.6UM LCF底部210.35um Trench DMOS process-Hard MaskLPTEOS 6500AN- N+EPISUBLPTEOS:6500ALPTEOSGR oxide清洗B-CLEANLPTEOSR0811测控制片5900-6500-7100A增密R0652220.35u

11、m Trench DMOS process-Hard Mask photoHard mask photo : ADI 0.35+/-0.03umN- N+EPISUBPRTRENCH光刻54# / CUNC01.TR套刻测量0.15UM测条宽0.32-0.35-0.38UM显检230.35um Trench DMOS process-Hard Mask etchHard mask dry etchN- N+EPISUBOE 500APRTEOS 腐蚀HME6500检查残氧测量0-50A 224PR strip N- N+EPISUB0.35um Trench DMOS process-Hard

12、 Mask PR strip干法去胶BC湿法去胶PR-L/R清洗B-CLEAN250.35um Trench DMOS process- Trench etch Trench etch : AEI 0.48+/-0.05umN- N+SUBTrench腐蚀NEW-BYD13K检查湿法去胶PR-L/RSOG湿法腐蚀20:1BOE 2MIN清洗B-CLEAN清洗D-CLEAN测条宽0.43-0.48-0.53UMTENC监测260.35um Trench DMOS process- N- IMP N- N+SUB00-P/100KEV/1E12N-N- IMP注 P+00-P/100KEV/1E1

13、2清洗D-CLEAN27SAC oxide 1200A0.35um Trench DMOS process- SAC oxideN- N+N-牺牲氧化R0038测控制片1080-1200-1320A280.35um Trench DMOS process- SAC oxide removeN- N+Hard mask and SAC oxide removeGR oxideRemain 5000AN-湿法腐蚀WE56残氧测量0-20A 2残氧测量4500-5000-5500A 1清洗B-CLEAN290.35um Trench DMOS process- Gate oxideGate oxid

14、e 500+/50AN- N+GR oxideN-栅氧R0344测产品片450-500-550A 2300.35um Trench DMOS process- DOPE POLYN- N+polyDope Poly 7k : 10-14-18/GR oxideN-原位掺杂R0445测控制片(膜厚)6300-7000-7700A测控制片(电阻)10-14-18/310.35um Trench DMOS process- POLY photoN- N+polyPOLY photo : ADI 1.0+/-0.1um N-PRPOLY1光刻32#/CUNC01.GT套刻测量0.15UM测条宽0.9-

15、1-1.1UM显检320.35um Trench DMOS process- POLY etchN- N+Poly etch : AEI 1.0+/-0.1umN-PRPOLY腐蚀POLY7000检查残氧测量480-530-580A 3漂洗WE99330.35um Trench DMOS process- POLY PR stripN- N+PR stripN-干法去胶BC湿法去胶PWSA01检查残氧测量430-480-530A 3残氧测量4250-4750-5250 1湿法腐蚀WE-N36残氧测量100-200-300A 3测条宽0.9-1-1.1UMKLA监测340.35um Trench

16、 DMOS process- PWELL IMP00-B/50KEV/2E13N- N+P WELL IMPN-清洗S/P5*1P阱曝光32#/CUNC01.PT套刻测量0.15UM测条宽0.9-1-1.1UM显检注 B+00-B/50KEV/2E13350.35um Trench DMOS process- PWELL drive in N+P-Drive in : 1150C,30minN-N-干法去胶BC湿法去胶PWSA01检查清洗S/P5*1推阱R0937测控制片120-150-180A360.35um Trench DMOS process profile-NSD photo N+P

17、-NSD photoPRN-N-NSD曝光32#/CUNC01.SN套刻测量0.12UM测条宽0.8-0.9-1UM显检前烘W370.35um Trench DMOS process profile-NSD IMPN- N+P-00-As/80KEV/1E16NSD IMPPRN-N-注 As+00-AS/80KEV/1E16380.35um Trench DMOS process profile-NSD PR stripN- N+P- PR stripN-N-干法去胶DE湿法去胶PWSA01检查清洗S/P5*1390.35um Trench DMOS process profile-NSD

18、anneal N+P-NSD anneal : 950C , 60minN-N+N-退火R0729400.35um Trench DMOS process profile-ILDN- N+P-BP 7500+TEOS 13KN-N+Total 20.5KN-USG1500 DEPUSG1500USG1500测产品片TF$FILED1UBPSG6000 DEPBPSG6000测产品片6525-7500-8475A 3回流R0675清洗PR-L/R检查TEOS淀积TEOS13K DEP测产品片-SI19525-20500-21475A3-SI擦片12#41N- N+P-N-N+Oxide CMP0

19、.35um Trench DMOS process profile-Oxide CMPILD 18.5KN-CMPD1 OCMP TO 18500A检查显微镜检查测产品片-SITENC监测42N- N+P-N-N+Contact photo : ADI 0.35+/-0.03um0.35um Trench DMOS process profile-Contact photoPRN-孔1光刻54# / CUNC01.W1套刻测量0.10UM测条宽0.32-0.35-0.38UM显检43N- N+P-N-N+Contact oxide etch0.35um Trench DMOS process

20、profile-Contact etchPROE 500AN-ANISO孔腐蚀EWIN10K检查残氧测量0-50A 344 N+P-N+0.35um Trench DMOS process profile-Contact etchContact SI etch : SI loss 5000A , AEI 0.35+/-0.05umPRN-5000AN-ANISO孔腐蚀ESI-5KA检查45 N+P-N+0.35um Trench DMOS process profile-Contact PR stripN- PR stripN-干法去胶BC湿法去胶PWSA0146N- N+P-N-N+0.35

21、um Trench DMOS process profile-P+ IMPP+ IMP00-BF2/100KEV/5E1400- B /150KEV/5E14P+P+N-47N- N+P-N-N+0.35um Trench DMOS process profile-P+ annealP+ anneal : 800C ,20SP+N-检查测条宽0.3-0.35-0.4UMRTA退火HJRTA.348N- N+P-N-N+P+TI 400A /TIN 600AW plug0.35um Trench DMOS process profile-W plugN-送溅射漂洗WE41-RIMP TI-TIN

22、TI400-TIN600RTA退火HJRTA.1KLA监测W淀积W400049N- N+P-N-N+P+W CMP0.35um Trench DMOS process profile-W CMPN-W-CMPWCMP检查AIT/KLA监测50N- N+P-N-N+P+TI 400/TIN600ALCu 30K0.35um Trench DMOS process profile-AL sputterN-TI-TINTI400-TIN400ALSICUALCU30K擦片78#SST清洗5MIN51N- N+P-N-N+P+0.35um Trench DMOS process profile-AL

23、photoPRAL photoN-AL1曝光38#/CUNC01.A1显检52 N+P-N-N+P+0.35um Trench DMOS process profile-AL etchPRAL ETCH N-AL1曝光38#/CUNC01.A1显检闪氧DESCUMUV固胶DAL1腐蚀TRENCH-30KSST清洗HOT AL检查合金R085253N- N+P-N-N+P+PR strip 0.35um Trench DMOS process profile-AL PR stripN-54N- N+P-N-N+P+0.35um Trench DMOS process profile-Taping

24、TapingN-贴膜TAPE检查显微镜检查55N- N+P-N-N+P+0.35um Trench DMOS process profile-backside SI etchBackside SI etchN-背面减薄230UM检查显微镜检查测产品片220-230-240UM56N- N+P-N-N+P+Detaping0.35um Trench DMOS process profile-Detaping N-揭膜DETAPE背面SI湿法腐蚀WSI-08检查显微镜检查57N- N+P-N-N+P+Ti NiAgGRILDWGR oxideP-wellN+Gate polyGate PADSou

25、rce PADDrain PADBackside clean and sputter0.35um Trench DMOS process profile-backside sputterpolyN-漂洗2MIN背面溅射E:TI-NI-AG检查显微镜检查参数测试CUNC01出片检查58 DMOS introduction and application Trench DMOS feature Process flow introduction Main important step and issue discussion59Trench etch1.Trench profile couldnt be too sloping (angle85