第二章光学曝光技术

1、MicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano Sy

2、stem Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Researc

3、h CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicr

4、oNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System

5、 Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research Ce

6、nterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research CenterMicroNano System Research Center531. 基片前处理基片前处理为确保光刻胶能和晶圆表面很好粘贴，形成平滑且结合得很好的膜，必须进行表面准备，保持表面干燥且干净；2. 涂光刻胶涂光刻胶涂胶的目标是在晶圆表面建立薄的、均匀的，并且没有缺陷的光刻

7、胶膜；3. 前烘前烘(软烘焙软烘焙)前烘的目的是去除胶层内的溶剂，提高光刻胶与衬底的粘附力及胶膜的机械擦伤能力；MicroNano System Research Center544. 对准和曝光对准和曝光(AE)保证器件和电路正常工作的决定性因素是图形的准确对准，以及光刻胶上精确的图形尺寸的形成。所以，涂好光刻胶后，第一步是把所需图形在晶圆表面上准确定位或对准。第二步是通过曝光将图形转移到光刻胶涂层上；5. 显影显影显影是指把掩膜版图案复制到光刻胶上；6. 后烘后烘(坚膜坚膜)经显影以后的胶膜发生了软化、膨胀，胶膜与硅片表面粘附力下降。为了保证下一道刻蚀工序能顺利进行，使光刻胶和晶圆表面更好地粘结，必须继续蒸发溶剂以固化光刻胶；MicroNano System Research Center557. 刻